Electrical properties of Si- and Mg-doped InAs epitaxial layers grown by MOCVD were studied by performing magneto-transport measurements at different temperatures, from 300 K down to 1.2 K. The longitudinal magnetoresistance and Hall effect indicate a three-band system existing in n-type (p-type) InAs, which consists of the surface accumulation (inversion) layer, the bulk electron (hole) layer, and the nucleation layer. Therefore, a classical parabolic background in magnetoresistance due to multi-carrier occurs at low fields. With the magnetic field being further applied, a linear magnetoresistance caused by inhomogeneities is revealed. At liquid helium temperature, the Shubnikov-de Haas magneto-oscillations are also observed. These transport characterizations provide a means of analyzing the band structure at the InAs surface. In a set of n-type InAs epilayers with Si doped at different levels, the bulk electron density increases as the doping level increases. The increased ionized impurities lead to lower electron mobilities due to more Coulomb scatterings. For all the n-type InAs films, except the two active layers (surface and the bulk), the nucleation layer contributes to the film conductivity as well with an electron density of ~ 5 x 10¹⁷ cm⁻³ and a mobility of ~ 2000 cm²}/Vs. In a cooldown process, the electron density of each layer slightly and monotonically decreases whereas the mobility experiences a maximum from the competition between phonon scatterings and Coulomb scatterings. The phonon scattering overwhelms the Coulomb scatting at high temperatures, but declines as temperature decreases, thus the mobility increases. Around 100 K, the temperature-independent ionized impurity scattering becomes comparable with and starts exceeding the phonon scattering, as temperature further lowered, the screening effect of the Coulomb scattering is weakened because of the decreased carrier densities. As a result, the mobility starts dropping. The maximum mobility corresponds to a minimum resistance, which explains the non-trivial temperature dependence of the resistance in the cooldown history. For the p-type InAs film, the doping with Mg in the course of MOCVD growth allows us to obtain a large hole density and a low mobility at 300 K. At low temperatures, holes are frozen out, and a strong negative magnetoresistance with a dip at 0 field are observed, which is the antilocalization signal from accumulation electrons. This is a strong technique to probe the surface quantum states and derive the phase coherence length and the spin flip length of surface electrons. / Master of Science

Das Verhalten der elektronischen Eigenschaften von gespaltenen, aus der Schmelze gezüchteten In2O3-(111) Kristallen wurde bei Deposition von Edelmetallen, In und Sn mittels winkelaufgelöster Photoelektronen-Spektroskopie untersucht. Die Stöchiometrie, strukturelle Qualität und Kristall-Orientierung, die Oberflächenmorphologie und die Elektronenkonzentration wurden jeweils mittels energiedispersiver Röntgenspektroskopie, Laue-Beugung, Raster Tunnel-Mikroskopie (STM) und Hall-Effekt untersucht. Die Ähnlichkeit der fundamentalen und Oberflächen-Bandlücken kann auf das fast flache Verhalten der Bänder auf der gespaltenen Oberfläche der Kristalle zurückgeführt werden. Die Grenzflächen von Ag und Au/In2O3 zeigen Schottky-Verhalten, während ein ohmscher in Cu, In und Sn /In2O3-Kontakten beobachtet wurde. Aufgrund der Übereinstimmung zwischen optischen und Oberflächen-Bandlücken, der Bildung eines Gleichrichterkontaktes und des Auftretens der Oberflächenphotospannung auf der frischen Kristalloberfläche kann gefolgert werden, dass SEAL nicht eine intrinsische Eigenschaft der gespaltenen Oberfläche der untersuchten Kristalle ist. Des Weiteren wurden bei dicker Au- und Cu-Beschichtung von In2O3 bei Raumtemperatur Shockley-artige Oberflächenzustände beobachtet. Zusätzlich wurde die erste Phase des Wachstums von Cu und In auf In2O3 von der Ausbildung eines 2-dimensionalen Elektrongases (2DEG) begleitet, welches bei dickeren Schichten verschwand, die von dem auf reinen Oberflächen von dünnen In2O3- Filmen gemessenen 2DEG verschieden sind. Nach Messung der Austrittarbeit von In2O3 und den jeweils untersuchten Metallen in situ und unter Verwendung der Schottky-Mott-Regel trat außer bei Ag/In2O3 eine deutliche Abweichung auf. Die experimentellen Ergebnisse stimmen auch mit fortgeschrittenen Theorien, die auf dem Elektronegativitätskonzept und MIGS–Modellen basieren, nicht überein. / The behavior of the electronic properties of as-cleaved melt-grown In2O3 (111) single crystals was studied upon noble metals, In and Sn deposition using angle-resolved photoemission spectroscopy. The stoichiometry, structural quality and crystal orientation, surface morphology, and the electron concentration were examined by energy dispersive X-ray spectroscopy, Laue diffraction, scanning tunneling microscopy (STM), and Hall-effect measurement, respectively. The similarity of the measured-fundamental and surface-band gaps reveals the nearly flat behavior of the bands at the as-cleaved surface of the crystals. Ag and Au/In2O3 interfaces show Schottky behavior, while an ohmic one was observed in Cu, In, and Sn/In2O3 contacts. From agreement of the bulk and surface band gaps, rectifying contact formation as well as the occurrence of photovoltage effect at the pristine surface of the crystals, it can be deduced that SEAL is not an intrinsic property of the as-cleaved surface of the studied crystals. Moreover, for thick Au and Cu overlayer regime at room temperature, Shockley-like surface states were observed. Additionally, the initial stage of Cu and In growth on In2O3 was accompanied by the formation of a two dimensional electron gas (2DEG) fading away for higher coverages which are not associated with the earlier-detected 2DEG at the surface of In2O3 thin films. The application of the Schottky-Mott rule, using in situ-measured work functions of In2O3 and the metals, showed a strong disagreement for all the interfaces except for Ag/In2O3. The experimental data also disagree with more advanced theories based on the electronegativity concept and metal-induced gap states models.

Le transport des micro-organismes, comme par exemple les bactéries, par un fluide se retrouve au centre de thématiques de recherche dans des domaines aussi variés que de la biologie, l’écologie, l’ingénierie et la médecine.Ce manuscrit résume mon étude expérimentale du couplage entre le mouvement microscopique de la nage des bactéries et le mouvement advectif de l’écoulement.La première partie du manuscrit porte sur la rhéologie des suspensions d’E. coli sous faible taux de cisaillement. Pour cette condition, j’ai montré que les perturbations hydrodynamiques induites par la nage réduisent fortement la viscosité. Cet effet peut-être si important pour qu’il soit suffisant pour compenser entièrement la perte visqueuse due au cisaillement.La seconde partie traite des expériences d’écoulement réalisées dans un canal capillaire. Pour cette géométrie, j’ai examiné le couplage pour des écoulements caractérisés par un plus fort taux de cisaillement. Le suivi des trajectoires et le dénombrement des bactéries m’ont permis de mettre en évidence l’existence d’une composante de vitesse normal à la direction de l’écoulement. Cette dernière montre que les bactéries suivent des trajectoires hélicoïdales qui s’enroulent autour du centre du capillaire d’une façon antihoraires. Cette nouvelle composante est corrélée à la migration préférentielle des bactéries dans une couche de localisation proche de la paroi du canal.Les couplages rhéotactiques bactéries/fluide que j’ai étudiés doivent avoir des conséquences potentielles sur le transport en géométries plus complexes qui mériteraient une étude particulière. / The question of transfer and spreading of living microorganisms, such as motile bacteria, is of interest in biology and ecology, but also in engineering and medicine.The way in which the background flow affects the behavior of these bacteria and how it impacts the bacterial transport through complex systems and on the macroscopic properties of the fluid remains unclear and little studied.In this thesis, I present an experimental investigation of the coupling between the local bacteria-driven motion and the fluid advection.In a first part, I investigate the rheological response of E. coli suspensions when subjected to weak flows (low shear rates). I show that, in particular conditions, the microscopic perturbations caused by the bacteria highly impact on the macroscopic viscosity of the suspension, leading to a striking viscosity decrease and eventually overcoming the dissipative effects due to viscous loss. I also identify the relevant time scales defining this viscosity decrease.In a second part, I perform experiments in a capillary channel and analyze the coupling for stronger flows (higher shear rates), at which bacteria were found not to impact on the macroscopic viscosity. Instead, by analyzing the bacterial trajectories under flow, I evidence a breakage of the symmetry of this trajectories which, characterized by a preferential migration, causes the localization of the bacteria in a layer that extends over a significant distance from the surface, and thus potentially influencing the bacterial transport in complex systems