In this work a new voltage buffer, the drain-follower, achieves 300MHz band-width with 2pF load, a dc gain of 0.993V/V, 1mV offset voltage, -60 dB total harmonic distortion at 1.4Vpp output voltage and 6.5mW power dissipation from 5V supply. A unity-gain buffer switched-capacitor biquad filter has been implemented in 0.5��m CMOS technology. The circuit has been sent for fabrication. Simulation results of the biquad filter indicate operation at 100MHz with 20mW power consumption from a 5V supply can be achieved. / Graduation date: 2002

The demand for broadband wireless communication is growing rapidly, requiring more spectrum resources. However, spectrum usage is inefficient today because different frequency bands are allocated for different communication standards and most of the bands are not highly occupied. Cognitive radio systems with dynamic spectrum access improve spectrum efficiency, but they require wideband tunable receiver hardware. In such a system, a preselect filter is required for the RF receiver front end, because an out-of-band (OB) interferer can block the front end or cause distortion, desensitizing the receiver. In a conventional solution, off-chip passive filters, such as surface-acoustic-wave (SAW) filters, are used to reject the OB interferer. However, such passive filters are hardly tunable, have large area, and are very expensive. On-chip, high-selectivity, linearly tunable RF filters are, therefore, a hot topic in RF front-end research. Switched-capacitor (SC) RF filters, such as N-path filters, feature good linearity and tunability, making them good candidates for tunable RF filters. However, N-path filters have some drawbacks: notably, a poor harmonic response and limited close-by blocker tolerance. This thesis presents the design and implementation of several interferer-tolerant receivers based on SC technology. We present an RF receiver with a harmonic-rejecting N-path filter to improve the harmonic response of the N-path bandpass filter. It features tunable narrowband filtering and high attenuation of the third- and fifth-order LO harmonics at the LNA output, which improves the blocker tolerance at LO harmonics. The 0.2-1 GHz RF receiver is implemented in a 65 nm CMOS process. The blocker 1 dB compression point (B1dB) is -2.4 dBm at a 20 MHz offset, and remains high at the third- and fifth-order LO harmonics. The LNA’s reverse isolation helps keep the LO emission below -90 dBm. A two-stage harmonic-rejection approach offers a > 51 dB harmonic-rejection ratio at the third- and fifth-order LO harmonics without calibration. To improve tolerance for close-by blockers, we further present an SC RF receiver achieving high-order, tunable, highly linear RF filtering. We implement RF input impedance matching, N-path filtering, high-order discrete-time infinite-impulse response (IIR) filtering and downconversion using only switches and capacitors in a 0.1-0.7 GHz prototype with tunable center frequency, programmable filter order, and very high tolerance for OB blockers. The 40 nm CMOS receiver consumes 38.5-76.5mA, achieves 40 dB gain, 24 dBm OB IIP3, 14.7 dBm B1dB for a 30MHz blocker offset, 6.8-9.7 dB noise figure, and > 66dB calibrated harmonic rejection ratio. The key drawback of our earlier SC receiver is the relatively high theoretical lower limit of the noise figure. To improve the noise performance, we developed a 0.1-0.6 GHz chopping SC RF receiver with an integrated blocker detector. We achieve RF impedance matching, high-order OB interferer filtering, and flicker-noise chopping with passive SC circuits only. The 34-80 mW 65 nm receiver achieves 35 dB gain, 4.6-9 dB NF, 31 dBm OB-IIP3, and 15 dBm B1dB. The 0.2 mW integrated blocker detector detects large OB blockers with only a 1 us response time. The filter order can be adapted to blocker power with the blocker detector.

University of Macau / Faculty of Science and Technology / Department of Electrical and Electronics Engineering

University of Macau / Faculty of Science and Technology / Department of Electrical and Electronics Engineering

This dissertation presents a low-power high-resolution delta-sigma ADC. Two new architectural design techniques are proposed to reduce the power dissipation of the ADC. Compared to the conventional active adder, the direct charge transfer (DCT) adder greatly saves power by keeping the feedback factor of the active adder unity. However, the inherent delay originated from the DCT adder will cause instability to the modulator and complex additional branches are usually needed to stabilize the loop. A simple and power-efficient technique is proposed to absorb the delay from the DCT adder and the instability issue is therefore solved. Another proposed low-power design technique is to feed differentiated inverted quantization noise to the input of the last integrator. The modulator noise-shaping order with this proposed technique is effectively increased from two to three without adding additional active elements. The delta-sigma ADC with the proposed architectural design techniques has been implemented in transistor-level and fabricated in 0.18 µm CMOS technology. Measurement results showed a SNDR of 99.3 dB, a DR of 101.3 dB and a SFDR of 112 dB over 20 kHz signal bandwidth, resulting in a very low figure-of-merit (FoM) in its application category. Finally, two new circuit ideas, low-power parasitic-insensitive switched-capacitor integrator for delta-sigma ADCs and switched-resistor tuning technique for highly linear Gm-C filter design are presented. / Graduation date: 2012 / Access restricted to the OSU Community at author's request from June 9, 2012 - June 9, 2014