THz spectroscopy is an emerging technique for studying the dynamics and interactions of cells and biomolecules, but many practical challenges still remain in experimental studies. We present a prototype of simple and inexpensive cell-trapping microfluidic chip for THz spectroscopic study of live cells. Cells are transported, trapped and concentrated into the THz exposure region by applying an AC bias signal while the chip maintains a steady temperature at 37 degrees C by resistive heating. We conduct some preliminary experiments on E. coli and T-cell solution and compare the transmission spectra of empty channels, channels filled with aqueous media only, and channels filled with aqueous media with un-concentrated and concentrated cells.

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In this dissertation, channel modeling for Terahertz (THz) channels and designs of nano devices for THz communications are studied. THz communication becomes more and more important for future wireless communication systems that require an ultra high data rate, which motivates us to propose new nano device designs based on graphene and new system models for the THz channel. Besides, the multiple-input multiple-output (MIMO) antenna technique is well known to increase the spectral efficiency of a wireless communications system. Considering THz channels' particular characteristics, MIMO systems with reconfigurable antennas and distributed antennas are proposed. We compare the differences between MIMO systems in the GHz and THz bands, and highlight the benefits of using multi antennas in the THz band. The work on nano device designs provides two antenna designs with single walled carbon nanotubes (SWCNTs) and graphene nano ribbon (GNR). First, we analyse the spectral efficiency of an SWCNT bundled dipole antenna based MIMO system in the Terahertz band. Two scenarios are considered: the large scale MIMO and the conventional scale MIMO. It is found that, in order to get the maximum spectral efficiency, the CNT bundle size should be optimized to obtain a tradeoff between the antenna efficiency and the number of antennas for a given area. We also discuss the random fluctuation in the bundle size during the CNT bundled antenna fabrication which reduces the system spectral efficiency. Then, we propose reconfigurable directional antennas for THz communications. The beamwidth and direction can be controlled by the states of each graphene patch in the antenna, and the states can be easily configured by changing the electrostatic bias voltage on each element. The work on reconfigurable MIMO system proposes a new antenna array design for MIMO in the THz band. First, the path loss and reflection models of the THz channel are discussed. Then, we combine the graphene-based antenna and the THz channel model and propose a new MIMO antenna design. The radiation directions of the transmit antennas can be programmed dynamically, leading to different channel state matrices. Finally, the path loss and the channel capacity are numerically calculated and compared with those of the GHz channel. The results show that for short range communications, the proposed MIMO antenna design can enlarge the channel capacity by both increasing the number of antennas and choosing the best channel state matrices. The work on MIMO channels proposes a statistical model for the MIMO channel with rough reflection surfaces in the THz Band. First, our analysis of scattering from a rough surface indicates that the reflection from a single surface can be a cluster of rays. Secondly, a new MIMO model for THz communications is proposed. In this model, the number of multipaths is highly dependent on the roughness of the reflecting surfaces. When the surface is ideally smooth, the MIMO channel is sparse and as a result, the capacity is sub-linear with the MIMO scale. On the other hand, when the surface is rough, more degrees of freedom are provided by the scattered rays. Finally, channel capacities with different surface roughness are numerically calculated and compared between different MIMO scales. The results show that in contrast to the GHz range, large scale THz multiple antennas may not provide as much multiplexing gain. Therefore, it is necessary to determine the antenna scale according to the actual propagation environment. The work on distributed antenna systems (DAS) proposes a new DAS model in the THz band. First, the model of DAS in the THz frequency is discussed, which has fewer multipaths than that in the GHz band. Then, we analyze the characteristics of the DAS model and point out that the channel is very sparse if the number of antennas on the base station (BS) is very large. Besides, we provide reasons for the fact that DAS can have a large number of degrees of freedom. We compare the capacities of MIMO systems with DAS and without DAS. The results show that for THz channels, increasing the number of antenna units (AUs) is much more important than increasing the number of antennas in one AU. Finally, we propose an antenna selection and precoding scheme which has very low complexity. / Graduate

Ingeniero Civil Eléctrico / La tecnología de terahercios se encuentra en un estado de desarrollo atrasado con respecto a las tecnologías usadas en las bandas adyacentes, como la óptica infrarroja o la electróni- ca de microondas. En particular, no se poseen fuentes compactas de radiación que operen dentro esta banda logrando buenos niveles de potencia y amplios rangos de frecuencia. Las útiles propiedades de la radiación de terahercios como su capacidad de detectar moléculas complejas, buena resolución espacial y ser radiación no ionizante, hacen que el desarrollo de tecnología para esta banda sea un área con creciente interés. En el contexto del desarrollo de una nueva línea de investigación sobre espectroscopía molecular, en el Laboratorio de Terahertz y Astrofotónica de la Universidad de Chile, se realiza este trabajo que consiste en el desarrollo experimental de un sistema láser para la ali- mentación de fotomezcladores. Este sistema tiene como objetivo la generación de dos señales ópticas de alta estabilidad y coherencia, cuya diferencia de frecuencias puede ser ajustada de forma continua dentro del rango de 10 GHz a 300 GHz. Para esto, se utiliza un esquema basado en un peine de frecuencias óptico sobre el cual se enclava por inyección un láser de diodos de frecuencia sintonizable. Esto consigue tener una fuente infrarroja de alta precisión dentro de un gran rango. Además, se genera una segunda señal por medio de modulación en amplitud (AM), la cual es sintonizable dentro de un rango igual al espaciado producido por el peine óptico. En conjunto, estas señales logran abarcar un amplio espectro de frecuencias de forma continua sin perder estabilidad ni calidad de las señales. En este trabajo se logra implementar los subsistemas para la generación de cada una de las señales requeridas y se estudia la capacidad de estos para trabajar dentro del rango deseado. Para la señal generada por enclavamiento por inyección, se logra probar el concepto dentro de un rango reducido, principalmente por falta de un buen sistema de medición de altas frecuencias. Para la señal generada por modulación AM, se logran resultados positivos en todo el rango de diseño. Finalmente, se proponen modificaciones al sistema para mejorar su desempeño. / Este trabajo ha sido parcialmente financiado por Conicyt, a través de su fondo ALMA para el desarrollo de la astronomía, Proyecto 31140025, QUIMAL, Proyecto 1500010, CATA-Basal PFB06 y Fondecyt 1151213

The electric properties of materials in the THz spectrum are of significant interest for scientific research in the past two decades thanks to the development of THz-TDS systems. However, the measurement capability of the system is still bound by the low efficiency and instability of the system. In this work, a thorough assessment of the THz-TDS system is carried out in order to enhance the measurement capability of the system and provide guidelines for accurate and repeatable measurements. In Chapter 2, the operation fundamentals of THz-TDS systems including the generation and detection are reviewed. The limitations of THz-TDS systems are evaluated in the aspects of dynamic range, signal-to-noise ratio, and spectral resolution. The influence of systematic parameters are addressed and examined. In Chapter 3, a systematic characterisation of the performance of PCAs is performed. The performance of THz PCA is evaluated with respect to the intrinsic and extrinsic excitation parameters, as well as the power collection efficiency within the THz-TDS system. Performance evaluation is carried out in combination of experimental measurements and numerical modellings. Chapter 4 extensively investigates the sensitivity of the THz-TDS system regarding on misalignment of the components. An EM simulation model is built for the evaluation. Point E-field respond in frequency domain and time-domain are examined corresponding directly to the detection signal, and compared with lab measurements. The model is then extended to study the field distribution inside the system. Mode analysis of the field is conducted to discover the pattern of energy coupling related to misalignment. Chapter 5 aims to further enhance the efficiency and radiation characteristics of THz PCAs by adapting the concept of antenna array. The influence of array configuration is assessed by array factor analysis. Coupling conditions of array parameters are established. Performance dependences of THz PCAs on the array geometrics are extensively studied in theory, and tested against experiment. Chapter 6 assess the implementation of plasmonoic structures for the improvement of efficiency and power at the THz generation process. Fundamentals are discussed and structures are designed accordingly. Optimisation principles in consideration of the carrier properties are proposed and practised. Photoconductive antennas with plasmonic structures are fabricated and tested in a THz-TDS system, and the results are compared with simulation.

Ultrafast spectroscopy is used to study essential characteristics of solid-state materials. We use ultrafast techniques to study semiconductors at THz frequencies, as well as demonstrate new single-shot measurement techniques. The future of electronics is in the THz regime. We study a crucial characteristic of semiconductors used in devices: the critical field at which the material becomes conductive. GaAs is a promising semiconductor for high-speed devices, and we use enhanced THz electric fields to measure the critical fields at 0.7, 0.9, 1.1, and 1.5 THz frequencies. Single-shot spectroscopy is a technique used to measure ultrafast time scale laser pulses. We show that a new, optical-fiber-based single-shot technique can map out the electric field of THz pulses. Also, we show two variants on this single-shot theme that can be used to measure ultrafast signals. We compare a classic pump-probe measurement to two types of single-shot measurements that use either a spectrometer or a 3 km fiber optic cable and oscilloscope, and we discuss important considerations to recovering the sample response.

In this thesis, a novel method for multi-pulse with equal chirp characteristics and more efficient THz generation through two photon absorption (TPA) are investigated and demonstrated. These are all the first time, for our best knowledge, odd multi-pulses generation and innovative approach for efficient THz through TPA are proposed and studied. By modulating the amplitude and phase of the spatial light modulator with the pulse shaper, the number of multi-pulses can be adjustable without the limitation of even number only. Meanwhile, the chirp properties of the generated pulses are with the same characteristics and tunable also. For the case with bandwidth of 10nm, the generated multi-pulses with equal chirps varying from -20000fs^2 to 20000fs^2 are demonstrated and the results have a good agreement with the theoretical estimation. We also discuss the number of the multi-pulses and inequalities of the amplitude of the pulses are limited by the spectral resolution of SLM within the pulse shaper. Regarding to efficient THz radiation, it can be generated more efficiently from a low-temperature-grown GaAs (LT-GaAs) photoconductive (PC) antenna by taking into account the TPA induced photo-carrier in the photoconductor. A rate-equation-based approach using the Drude-Lorentz model taking into account the band-diagram of LT-GaAs is used for the theoretical analysis. The super-linear power dependent photocurrent clarifies the role of TPA. Previously unnoticed THz pulse features and anomalously increasing THz radiation power rather than saturation were observed. These are in good agreement with the theoretical predictions.

Ultrasparčių puslaidininkinių komponentų kūrimas reikalauja gilesnio supratimo apie tai, kaip puslaidininkiuose vyksta fizikiniai procesai, trunkantys kelias pikosekundes ar net mažiau nei vieną pikosekundę. Tokie reiškiniai, kaip elektronų impulso ir energijos relaksacija bei nepusiausvyrųjų krūvininkų pagavimas yra labai svarbūs puslaidininkinių fotonikos ir terahercinio diapazono prietaisų veikimui. Iki pastarojo meto pagrindinis ultrasparčiųjų procesų puslaidininkiuose tyrimo įrankis buvo optiniai metodai, kuriuose elektronų dinamikai stebėti buvo pasitelkiami pikosekundinių ar femtosekundinių lazerių impulsai. Nepaisant išskirtinai didelės šių metodų laikinės skyros, optinio kaupinimo-zondavimo matavimų rezultatus yra palyginti sudėtinga interpretuoti. Šie rezultatai dažniausiai yra įtakojami kelių sistemos parametrų kitimo ir įvairių fizikinių reiškinių tarpusavio sąveikos, todėl sunkiai susiejamas su kuria nors elektronų laikine charakteristika. Disertacijos darbo tikslas – naudojant terahercinės spinduliuotės impulsus išmatuoti elektronų impulso ir energijos relaksacijos trukmes keliuose siauratarpiuose puslaidininkiuose bei jų gyvavimo trukmes medžiagose, skirtose fotolaidžių terahercinės spinduliuotės emiterių ir detektorių gamybai. Šioje disertacijoje yra pateikiami įvairių charakteringų elektroninius procesus puslaidininkiuose apibūdinančių trukmių matavimų naudojant terahercinės spinduliuotės impulsus rezultatai. Tokie tyrimai atlikti ir optinio žadinimo –... [toliau žr. visą tekstą] / Creation of ultrafast semiconductor components is inconceivable without understanding various processes of picoscond duration in semiconductors. These processes, as electron energy relaxation time or nonequiriblium carrier capture are very important for semiconductor photonics and terahertz range devices. Since now, the most popular tool of measuring ultrafast processes in semiconductors was picosecond or femtosecond laser pulses. In spite of excellent time resolution, optical pump – probe methods have a significant imperfection. Interpretation of the results can be very complicate. Also, the measured result can be affected by few variable parameters or interaction of various physical phenomenon. Therefore determinate results can be hardly related with electron time dependent characteristic. The aim of this dissertation was to measure electron energy relaxation times and electron life times by using terahertz pulses in narrow – gap semiconductors used for photoconductive terahertz emitters or detectors. In this dissertation, electron characteristic times witch describe various processes in semiconductor, were studied. These measurements were performed by optical pump – terahertz probe technique and time domain terahertz spectroscopy. The emission of terahertz pulses from the semiconductor surface, illuminated by femtosecond laser pulses, was investigated.

The region between the infrared and microwave region in the electromagnetic spectrum, the Terahertz (THz) gap, provides an exciting opportunity for future wireless communications as this band has been under utilised. This doctoral work takes a two-pronged approach into closing the THz gap with low-dimensional materials. The first attempt addresses the need for a compact THz source that can operate at room temperature. The second approach addresses the need to build optical elements such as filters and modulators in the THz spectrum. Terahertz quantum cascade lasers (THz QCLs) are one of the most compact, powerful sources of coherent radiation that bridge the terahertz gap. However, their cryogenic requirements for operation limit the scope of the applications. This is because of the electron-electron scattering and heating of the 2-dimensional free electron gas which leads to significant optical phonon scattering of the hot electrons. Theoretical studies in laterally confined QCL structures have predicted enhanced lifetime of the upper state through suppression of the non-radiative intersubband relaxation of carriers, which leads to lower threshold, and higher temperature performance. Lithographically defined vertical nanopillar arrays with electrostatic radius less than tens of nm offer a possible route to achieve lateral confinement, which can be integrated into QCL structures. A typical gain medium in a QCL consists of at least 100 repeat periods, with a thickness of 6-14 micron. For practical implementation of the top-down approach, restrictions are imposed by aspect ratios that can be achieved in present dry-etching systems. Typically, for sub-200 nm radius pillars, the thickness ranges from 1-3.5 micron. It is therefore necessary to work with THz QCLs based on 3-4 quantum well active regions, so as to maximise the number of repeat periods (hence gain) within an ultra-thin active region. After an introductory chapter, Chapter 2 presents a theoretical treatise on the realistic electrostatic potential in a lithographically defined nanopillar by scaling from a single quantum well (resonant tunnelling diode) to a THz QCL. Chapter 2 also discusses, the effect of lateral confinement on the intersubband states and the plasmonic mode in a THz QCL. One of the key experimental challenges in scaling down from QCLs to quantum-dot cascade lasers is the electrical injection into the nanopillars. This involves insulation and planarisation of the high aspect-ratio nanopillar arrays. Furthermore, the choice of the planarising layer is critical since it determines the loss of any optical mode. This experimental challenge is solved in Chapter 3. Chapter 4 presents the electro-optic performance of low-repeat period QCLs with an active region thickness that is less than 3.5 micron. Another topic of recent interest in the THz optics community is plasmonics in graphene. This is because the bound electromagnetic modes (plasmons) are tightly confined to the surface and can also be tuned with carrier concentration. Plasmonic resonance at terahertz frequencies can be achieved by gating graphene grown via chemical vapour deposition (CVD) to a high carrier concentration. THz time domain spectroscopy of such gated monolayer graphene shows resonance features around 1.6 THz superimposed on the Drude-like frequency response of graphene which may be related to the inherent poly-crystallinity of CVD graphene. Chapter 5 discusses these results, as an understanding of these features is necessary for the development of future THz optical elements based on CVD graphene. Chapter 5 finally describes how the gate tunability of THz transmission through graphene can be exploited to indirectly modulate a THz QCL. Chapter 6 presents ideas from this doctoral work, which can be developed in future to address the issues of enhanced temperature performance of THz QCLs and to realise realistic THz devices based on graphene.

A guided-wave THz System-on-Chip (TSoC) is emerging as an attractive alternative to the routine free-space THz systems to reduce physical bulk, propagation loss, pulse dispersion and cost of free-space THz systems. Recently, our research group succeeded in demonstrating a novel waveguided TSoC based on the coplanar stripline (CPS) transmission lines on a 1 µm-thin Silicon Nitride membrane. The novelty of this membrane-based platform was bonding the transmitter and receiver directly on the transmission line to eliminate the radiation loss by the routine THz optics. Besides, the delicate thin-membrane dramatically reduces the dielectric loss of the platform which results in low-loss and low-dispersion THz-bandwidth pulses. This Ph.D. dissertation presents the first end-to-end TSoC components that were designed and fabricated using the CPS transmission lines on 1 µm-thin Si3N4 membranes. These components are integrated into a TSoC by bending or connecting different impedance CPS transmission-line sections. We demonstrate four passive TSoC components: THz low-pass filter (TLPF), THz power divider (TPD), THz apodized Bragg grating (TABG) and THz branch-line coupler (TBLC). One of the most significant gains from this work is the assurance that more complex TSoCs can be designed and fabricated using this membrane-platform based on the strong agreement between simulation and experimental results. / Graduate / 2021-12-01