[pt] Na indústria do petróleo, a passagem de pigs em dutos tem sido largamente aplicada com diferentes propósitos: limpeza do tubo, inspeção, remoção de líquido e separação de produtos, entre outros. A eficiência e segurança de uma operação com pig demandam que diversos parâmetros operacionais, tais como pressões máximas e mínimas no duto e velocidade de movimentação do pig, sejam bem avaliados durante a etapa de planejamento e mantidos dentro de determinados limites durante o acompanhamento da operação. Tendo como objetivo a obtenção de uma ferramenta eficiente para ajudar no controle e projeto das operações de passagem de pigs, desenvolveu-se um código numérico baseado no método de diferenças finitas para a simulação de escoamentos transientes de dois fluidos, podendo estes ser líquido-líquido, gás-gás ou líquido-gás. Módulos para controle automático das variáveis do processo foram incluídos, visando à previsão do escoamento mediante diferentes estratégias para alcançar uma operação eficiente. Problemas teste foram realizados, validando a metodologia. Por fim, os resultados obtidos com o simulador são comparados com um caso real de esvaziamento de um trecho do oleoduto OSPAR, pertencente à Petrobras, com 30`` de diâmetro e extensão de 60 km. / [en] In the oil industry, pigging operations in pipelines have been largely applied for different purposes: pipe cleaning, inspection, liquid removal and product separation, among others. Pigging operations to be efficient and safe require a number of operational parameters, such as maximum and minimum pressures in the pipeline and pig velocity, to be well evaluated during planning stage and maintained within stipulated limits while the operation accomplishment. With the objective of providing an efficient tool to assist in the controlling and designing of pig operations through pipelines, a numerical code based on a finite difference scheme for a two-fluid transient flow simulation was developed. The model accounts for liquid-liquid, gas-gas and liquid-gas products in the pipeline. Automatic control modules for some process variables were included to permit the flow prediction by means of different strategies to reach an efficient operation. Test problems were performed to validate the methodology. At last, simulation results were compared with an actual liquid displacement operation at a 60 km segment of the 30`` diameter OSPAR pipeline, owned by Petrobras.

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Wie hoch ist die Leistungsdichte, Energieeffizienz, Fahrdynamik oder der Fahrkomfort? Wie wirken unterschiedliche, physikalische Systeme zusammen und wie können die mechatronischen Zusammenhänge verständlich dargestellt werden? Solche und andere Fragestellungen tauchen im Entwicklungsprozess immer wieder auf und lassen sich nur schwer zufriedenstellend beantworten. Die Systemsimulation liefert da einen effizienten Ansatz, welcher es dem Entwicklungsingenieur ermöglicht bereits in der Konzeptphase virtuelle Prototypen zu erstellen. Mit diesen kann dann das physikalische Verhalten simuliert, analysiert und anschließend optimiert werden. Dadurch ergibt sich bereits in den frühen Phasen der Produktentwicklung die Möglichkeit, alle zukünftigen Entscheidungen auf einer validen Basis zu treffen. ESI ́s SimulationX liefert für diese Anwendungsfälle eine umfassende softwaretechnische Lösung. Besonders im Bereich der E- Mobility sowie ihrer Peripherie ermöglicht die Software mit seinen anwendungsspezifischen Modellbibliotheken eine ganzheitliche Betrachtung.

<p dir="ltr">This work introduces an innovative algorithm for co-simulating time-dependent Drift Diffusion (DD) equations with Maxwell\textquotesingle s equations to characterize semiconductor devices. Traditionally, the DD equations, derived from the Boltzmann transport equations, are used alongside Poisson\textquotesingle s equation to model electronic carriers in semiconductors. While DD equations coupled with Poisson\textquotesingle s equation underpin commercial TCAD software for micron-scale device simulation, they are limited by electrostatic assumptions and fail to capture time dependent high-frequency effects. Maxwell\textquotesingle s equations are fundamental to classical electrodynamics, enabling the prediction of electrical performance across frequency range crucial to advanced device fabrication and design. However, their integration with DD equations has not been studied thoroughly. The proposed method advances current simulation techniques by introducing a new broadband patch-based method to solve time-domain 3-D Maxwell\textquotesingle s equations and integrating it with the solution of DD equations. This technique is free of the low-frequency breakdown issues prevalent in conventional full-wave simulations. Meanwhile, it enables large-scale simulations with reduced computational complexity. This work extends the simulation to encompass the complete device, including metal contacts and interconnects. Thus, it captures the entire electromagnetic behavior, which is especially critical in electrically larger systems and high-frequency scenarios. The electromagnetic interactions of the device with its contacts and interconnects are investigated, providing insights into performance at the chip level. Validation through numerical experiments and comparison with results from commercial TCAD tools confirm the effectiveness of the proposed method. </p>

La prolifération des composants électroniques fait que l'étude de leur vulnérabilité face à des agressions électromagnétiques intentionnelles ou non devient de plus en plus préoccupante. Notre étude s'inscrit dans ce contexte et s'oriente plus particulièrement vers les composants numériques. Ces derniers incorporent généralement, à toutes leurs interfaces d'entrée et de sortie, des éléments de protection contre les décharges électrostatiques permettant d'éliminer tout signal se présentant avec une amplitude élevée. Cependant, les signaux perturbateurs peuvent avoir des amplitudes moindres mais des formes d'onde complexes et capables de causer des dysfonctionnements à ces composants numériques sans activer les protections. Dans ce cas, les étages d'entrée se retrouvent au premier plan et leur comportement face à ces signaux perturbateurs peut altérer la fonctionnalité globale du circuit. Ainsi, nous nous sommes proposés d'étudier et de modéliser les comportements de ces étages d'entrée face à ces types d'agressions. Une première étape a consisté à définir une plateforme d'expérimentation pour les composants numériques. Une sélection des types de composants de test a d'abord été effectuée et le choix s'est porté naturellement sur l'inverseur CMOS, car il est présent sur la quasi-totalité des étages d'entrée, et sa structure est simple et connue. Le choix de cette technologie est également dicté par sa simplicité et son omniprésence dans les équipements électroniques actuels. Différents types de signaux perturbateurs ont été appliqués à ces inverseurs CMOS afin d'observer et de relever leurs comportements typiques et particuliers. Ensuite, à partir des résultats expérimentaux, un modèle SPICE comportemental et générique des inverseurs CMOS a été créé. Différents types de modèles de composants numériques existent mais le type SPICE est le seul à expliciter leur architecture complète. En effet, pour des raisons liées aux propriétés intellectuelles, les fabricants sont généralement discrets sur les structures internes de leurs circuits intégrés. Par contre, ces modèles SPICE ne sont à priori valables que dans des limites de fonctionnement définis par les fabricants. Nous avons apporté diverses modifications à ce modèle afin d'incorporer les comportements observés en dehors des limites de fonctionnement des inverseurs CMOS. Le besoin de trouver un modèle générique a imposé d'étudier un grand nombre d'échantillons d'inverseurs CMOS de différents fabricants et de différentes familles technologies. Enfin, une synthèse des résultats de simulations et des modèles, en fonction des fabricants et des familles technologiques, a été réalisée sous forme d'un tableau récapitulatif. / The proliferation of electronic components increases the interest of investigations about their vulnerability against electromagnetic interference intentionally emitted or not. Our study falls in this context and is specifically devoted to digital devices. These devices usually include, at their input/output ports, protection elements to prevent against electrostatic discharges and all kind of signals with very high amplitude. However, the perturbating signals can have low amplitude and complex waveforms that can cause trouble to these digital devices without triggering protection elements. In this case, first stages are the front, and their behaviors against these perturbation signals can alter the good operation of the device. Thus, we propose to study and model the behaviors of these first stages against such aggressions. First of all, an experimental platform was defined for the digital devices. A selection of devices is done and CMOS inverter was naturally chosen because of its presence in almost all of the first stages of digital devices, and because its structure is simple and well known. The choice of the CMOS technology is also due to its simplicity and omnipresence in current electronic equipments. Different perturbation signals were applied to these CMOS inverters to observe and record their typical and particular behaviors. Secondly, with the experimental results, a behavioral and generic SPICE model of CMOS inverters was developed. Different models exist for digital devices, but SPICE is the only one explicitly describing their complete architecture. But, for intellectual proprieties reasons, the manufacturers are usually reluctant to share information on their devices’ internals. However, the SPICE models are only valid within some operating limits defined by manufacturers. We have brought different modifications to this SPICE model to incorporate the observed behaviors of CMOS inverters inside and outside their normal operating conditions. The generic criterion of the final model imposed to study a large number of CMOS inverters of different manufacturers and different logic families. Finally, a synthesis of models and simulation results, by manufacturer and logic family, is produced.