Nesta tese investigamos a partir de cálculos de primeiros princípios, dispositivos e componentes de dispositivos baseados em grafeno. Abordamos os campos da nanoeletrônica e da spintrônica. Dentro da nanoeletrônica investigamos: (i) propriedades de transporte de um nanotransistor de bicamada de grafeno na presença de um gate duplo. Demonstramos que sobre a ação de um campo elétrico externo, mesmo utilizando um gate da ordem de 10 nm, à temperatura ambiente e 4.5K uma corrente nula nunca é exibida. Esses resultados são explicados por um regime de tunelamento; (ii) propriedades eletrônicas e de transporte de multicamadas de grafeno em função do número de camadas e tipo de empilhamento entre elas. Mostramos que a estrutura eletrônica do sistema depende fortemente desse novo grau de liberdade de empilhamento. Na presença de um campo elétrico externo aplicado perpendicular ao sistema, o empilhamento do tipo Bernal nunca exibe um gap de energia, ao contrário do empilhamento romboédrico que exige um gap ajustável através da intensidade do campo. Mostramos também que é possível diferenciar os tipos de empilhamentos através da resistência do sistema e variando-se a temperatura; (iii) dentro das componentes de um nanotransistor mais realista, estudamos as propriedades eletrônicas e estruturais de: (a) bicamadas de grafeno sobre um substrato de nitreto de boro hexagonal. Neste sistema o limite de voltagens que podem ser aplicadas depende fortemente do número de camadas de h-BN e da direção do campo, onde quanto menos camadas maior é a voltagem que pode ser aplicada; (b) heteroestruturas compostas de bicamadas de grafeno, nitreto de boro hexagonal e cobre. Demonstramos que para uma aplicação direta em um dispositivo a configuração com uma bicamada de grafeno depositada sobre um substrato de h-BN e este conjunto sobre a superfície de cobre é a mais favorável. Nessa configuração é possível tanto controlar o gap na bicamada como a dopagem do sistema, sem a abertura de canais de condução através do dielétrico (h-BN). Dentro do campo da spintrônica estudamos: (i) propriedades de transporte das nanofitas de grafeno (GNR) (3,0) pristinas e dopadas com boro e nitrogênio. Para as GNR pristinas mostramos com os eletrodos em um alinhamento de spin anti-paralelo o sistema apresenta um comportamento de filtro de spin, onde para tensões de bias positivos/negativos somente o canal up/down conduz. Para as GNR dopadas com boro e nitrogênio, mostramos que as correntes para os diferentes canais de spin são não degeneradas ao longo de todo o intervalo de tensões aplicadas, apresentando desse modo um comportamento de filtro de spin; (ii) finalmente estudamos as propriedades de transporte de uma junção túnel magnética, composta de GNR intercaladas por uma nanofita de nitreto de boro hexagonal. Mostramos que esse sistema pode ser utilizado tanto como filtros de spin como elementos para dispositivos de magnetoresistência gigante, onde para este último a sua eficiência é muito mais pronunciada. / In this thesis we investigated by first principle calculations, devices and components of devices based on graphene. We covered the fields of nanoelectronics and spintronics. On the field of nanoelectronics we investigated: (i) the transport properties of a dual gate bilayer graphene nanotransistor. We showed that under the action of an external electrical field, even with a gate length of 10 nm, at room temperature and 4.5K a zero current is never exhibited. These results could be explained by a tunneling regime; (ii) the electronic and transport properties of few layer graphene, as function of the number and type of stacking of the layers. We show that the electronic structure strong deppends of the stacking order. On the presence of a external electrical field applied to the system, the Bernal stacking never presents a gap, contrary to the rombohedrical one, that posses a tuneable energy gap. Also we showed that is possible to differentiate the types of stacking by the resistance of the system and varying the temperature;(iii) for the components of a more realistic nanodevice, we study the structural and electronic properties of: (a) bilayer graphene over a hexagonal boron nitride substrate. We show that the voltages that could be applied to the system strongly depends of the number 0 layers and the direction of the field, where with more layers, smaller is the field; (b) heterostructures composed with bilayer graphene, hexagonal boron nitride and cooper. We show that for a direct application on a device, the better configuration is with a bilayer graphene over the hexagonal boron nitride, and this set over a cooper. In this configuration is possible to control both the gap and the doping of the system, without the creation of conducting channels through the dielectric (h-BN). On the field of spintronics, we study: (i) the transport properties (3,0) graphene nanoribbons pristines and doped with nitrogen and boron. For the pristine GNR we show that for the electrodes in an anti-parallel alignment the system presents a spin filter behavior, where for positive/negative bias the transport is only by up/down channel. For the GNR doped with nitrogen and boron we show that the current is non-degenerated in all range of voltages applied, presenting a spin filter behavior; (ii) finally, we study the transport properties of a magnetic tunnel junction, consisting of a GNR intercalated with a hexagonal boron nitride nanoribbon. We show that such system could be used both as a spin filter as a device that uses the the giant magnetoresistance effect, where for the last the system if more efficient.

No description available.

Organic ferroelectrics polymers have recently received much interest for use in nonvolatile memory devices. The ferroelectric copolymer poly(vinylidene fluoride- trifluoroethylene) , P(VDF-TrFE), is a promising candidate due to its relatively high remnant polarization, low coercive field, fast switching times, easy processability, and low Curie transition. However, no detailed study of charge injection and current transport properties in P(VDF-TrFE) have been reported in the literature yet. Charge injection and transport are believed to affect various properties of ferroelectric films such as remnant polarization values and polarization fatigue behavior.. Thus, this thesis aims to study charge injection in P(VDF-TrFE) and its transport properties as a function of electrode material. Injection was studied for Al, Ag, Au and Pt electrodes. Higher work function metals such as Pt have shown less leakage current compared to lower work function metals such as Al for more than an order of magnitude. That implied n-type conduction behavior for P(VDF-TrFE), as well as electrons being the dominant injected carrier type. Charge transport was also studied as a function of temperature, and two major transport regimes were identified: 1) Thermionic emission over a Schottky barrier for low fields (E < 25 MV/m). 2) Space-Charge-Limited regime at higher fields (25 < E <120 MV/m). We have also studied the optical imprint phenomenon, the polarization fatigue resulting from a combination of broad band optical illumination and DC bias near the switching field. A setup was designed for the experiment, and validated by reproducing the reported effect in polycrystalline Pb(Zr,Ti)O3 , PZT, film. On the other hand, P(VDF-TrFE) film showed no polarization fatigue as a result of optical imprint test, which could be attributed to the large band gap of the material, and the low intensity of the UV portion of the arc lamp white light used for the experiment. Results suggest using high work function metals for a memory application, as lower leakage would enhance fatigue endurance for P(VDF-TrFE) film.

No description available.

It has been predicted that gold, aluminum, and copper do not fundamentally change the graphene band structure when they are in close proximity to graphene, but merely increase the doping. My data confirms this prediction, as well as explores other consequences of the metal/graphene interface. First, I present a technique to fabricate thin oxide barriers between graphene and aluminum and copper to create tunnel junctions and directly probe graphene in close proximity to a metal. I map the differential conductance of the junctions versus tunnel probe and back gate voltage, and observe mesoscopic fluctuations in the conductance that are directly related to the graphene density of states. I develop a simple theory of tunneling into graphene to extract experimental numbers, such as the doping level of the graphene, and take into account the electrostatic gating of graphene by the tunneling probe. Next, results of measurements in magnetic fields will also be discussed, including evidence for incompressible states in the Quantum Hall regime wherein an electron is forced to tunnel between a localized state and an extended state that is connected to the lead. The physics of this system is similar to that encountered in Single Electron Transistors, and some work in this area will be reviewed. Finally, another possible method of understanding the interface between a metal and graphene through transport is presented. By depositing disconnected gold islands on graphene, I am able to measure resonances in the bias dependent differential resistance, that I connect to interactions between the graphene and gold islands.

Transport Properties of Wide Band Gap Semiconductors Louis Tirino III 155 pages Directed by Dr. Kevin F. Brennan The objective of this research has been the study of the transport properties and breakdown characteristics of wide band gap semiconductor materials and their implications on device performance. Though the wide band gap semiconductors have great potential for a host of device applications, many gaps remain in the collective understanding about their properties, frustrating the evaluation of devices made from these materials. The model chosen for this study is based on semiclassical transport theory as described by the Boltzmann Transport Equation. The calculations are performed using an ensemble Monte Carlo simulation method. The simulator includes realistic, numerical energy band structures derived from an empirical pseudo-potential method. The carrier-phonon scattering rates and impact ionization transition rates are numerically evaluated from the electronic band structure. Several materials systems are discussed and compared. The temperature-dependent, high-field transport properties of electrons in gallium arsenide, zincblende gallium nitride, and cubic-phase silicon carbide are compared. Since hole transport is important in certain devices, the simulator is designed to simulate electrons and holes simultaneously. The bipolar simulator is demonstrated in the study of the multiplication region of gallium nitride avalanche photodiodes.

Ce travail a été réalisé dans le cadre d’une étude sur les matériaux massifs thermoélectriques nanostructurés, composés dont les propriétés peuvent potentiellement être améliorées grâce aux nombreuses interfaces. Il concerne la réalisation et la caractérisation de composites à matrices skutterudites (CoSb3 ou In0,4Co4Sb12) contenant différents taux d’inclusions nanométriques de PbTe ou de ZnO. Des techniques de métallurgie des poudres et de fracturation laser en milieu liquide ont été conjuguées à divers moyens de caractérisation (RX, MEB, MET) pour mettre au point le protocole d’élaboration des matériaux. L’observation des microstructures des composites a révélé que l’étape de dispersion des particules dans le matériau est la plus délicate de la préparation. Celles-ci forment des amas localisés aux joints de grains. La porosité est également relativement importante lorsque le taux d’inclusions est élevé en particulier avec ZnO. Les propriétés électriques (pouvoir thermoélectrique, résistivité électrique, effet Hall) et thermiques (conductivité thermique) ont été mesurées sur une large gamme de température (2-800 K) puis corrélées aux microstructures. L’analyse des résultats a permis de montrer que le PbTe tend à dégrader les propriétés électriques des deux matrices du fait notamment d’une réaction des nanoparticules avec les skutterudites. Par contre, l’ajout de ZnO semble plus prometteur même s’il est difficile de conclure définitivement quant à son rôle réel compte tenu de la complexité des microstructures (défauts, pores, joints de grains). Un modèle théorique développé afin de mieux comprendre l’impact des tailles de particules sur les propriétés thermiques a mis en évidence qu’il est plus intéressant de travailler avec des skutterudites partiellement remplies plutôt qu’avec CoSb3 puisque les inclusions affectent majoritairement les phonons les moins énergétiques. Les tendances qui se dégagent de cette étude vont plutôt dans le sens d’une détérioration des propriétés avec ce type de nanostructuration lorsque les taux de nanoparticules excèdent quelques pourcents mais l’utilisation de quantités plus faibles et une porosité mieux maîtrisée pourrait avoir un effet positif / This work was carried out as part of a study on nanostructured bulk thermoelectric materials, compounds whose properties can potentially be improved with many interfaces. It is related to the synthesis and characterization of skutterudites (CoSb3 or In0.4Co4Sb12) containing nanoinclusions of PbTe or ZnO. Techniques of powder metallurgy and laser fragmentation in liquid medium were combined to X-rays diffraction analyses, SEM and TEM observations to develop the experimental procedure for the preparation of materials. The microstructures of the composites show that the dispersion step is the most difficult part of the preparation as it leads to agglomerates located at the grain boundaries. The porosity is also relatively large when the quantity of inclusions is high especially with ZnO. The electrical and thermal properties (thermoelectric power, electrical resistivity, Hall effect, thermal conductivity) have been measured over a wide temperature range (2-800 K) and correlated with the microstructures. The results analysis showed that PbTe tends to degrade the electrical properties of the two matrixes because of a reaction between the nanoparticles and the skutterudites. Contrarily, the addition of ZnO seems more promising although it is difficult to conclude definitively on its effectiveness given the complexity of the microstructures (defects, pores, grain boundaries). A theoretical model developed to better understand the impact of the particle sizes on the thermal properties showed that it is more interesting to work with partially filled skutterudites instead of pure CoSb3 since the inclusions mostly affect the scattering of long wavelength phonons. The trends that emerge from this study are rather in the sense of a deterioration of the thermoelectric properties with this type of nanostructure when the quantities of nanoparticles exceed a few percentage. The use of smaller quantities and a better controlled porosity should be considered

Les préoccupations environnementales actuelles ont conduit à un regain d’intérêt pour la conversion d'énergie par effets thermoélectriques au cours de ces 20 dernières années. Le challenge lié à cette technologie consiste à découvrir des matériaux qui possèdent à la fois une faible conductivité thermique, une forte conductivité électrique et un fort pouvoir thermoélectrique. Les travaux présentés dans ce mémoire se sont orientés vers l'étude de phases cristallines complexes à base de Mo3Sb7. Contrôler finement les propriétés électriques et thermiques de ces matériaux par le biais de substitutions appropriées et relier les propriétés physiques aux propriétés structurales et électroniques ont été au coeur de ces travaux de recherche. Des résultats significatifs ont ainsi pu être obtenus tant au niveau de la synthèse et de la caractérisation physico-chimique qu'au niveau des propriétés magnétiques et de transport. En particulier, nous avons pu mettre en évidence les propriétés exotiques du composé Mo3Sb7 dont la compréhension s'est révélée indispensable pour l'étude des propriétés de transport des matériaux substitués ternaires et quaternaires. Les différentes possibilités de substitution ont alors permis d'améliorer de façon substantielle les performances thermoélectriques du composé Mo3Sb7 et ont, de ce fait, conduit à la découverte de nouveaux matériaux surpassant les meilleurs matériaux connus à ce jour (Si-Ge) et utilisés sur la gamme 900 - 1200 K dans des applications en génération d'électricité / Due to current environmental concerns, a resurgence of interest in thermoelectricity have been witnessed by the last 20 years. The challenge raised by this technology lies in identifying materials that display low thermal conductivity as well as both high electrical conductivity and thermopower. The work presented in this manuscript deals with a thorough study on molybdenum-antimony based complex crystalline structure. To finely control the thermal and electrical properties of these compounds through judicious substitutions and to link up physical and structural properties were at the heart of this in-depth study. Not only did we obtain outstanding results regarding the synthesis and both the chemical and structural characterizations but we also discovered intriguing magnetic and transport properties. Particularly, we emphasized the exotic properties exhibited by the binary Mo3Sb7 compound whose a deep understanding were essential to study the transport properties of the ternary and quaternary alloys. The different substitutions we have considered were found to substantially improve the thermoelectric properties of the Mo3Sb7 compound and thus, led to the synthesis of new prospective thermoelectric materials that surpass the best compounds discovered up-to-now (Si-Ge) and used in power generation applications in the 900 – 1200 K temperature range

L’objectif de cette thèse était la modélisation numérique de la torche à plasma à couplage inductive. (ICP). Nous avons établi les bases de données nécessaires : composition, propriétés thermodynamiques et de transport appliqués aux mélanges d’argon, d’acide nitrique et d’eau. Le modèle hydrodynamique de la torche ICP (7 spires) considère le plasma à l'équilibre thermodynamique et couple les équations de Navier-Stokes pour décrire l'écoulement du plasma aux équations de Maxwell pour décrire l'évolution du champ électrique et du champ magnétique. / The purpose of the work was the numerical modeling of the inductive coupling plasma torch. (ICP). We have established the necessary databases: composition, thermodynamic and transport properties applied to argon mixtures of nitric acid and water. The hydrodynamic model of the ICP torch (7 coils) considers the plasma at thermodynamic equilibrium and uses the Navier-Stokes equations to describe the plasma flow and the Maxwell equations to describe the evolution of the electric field and the magnetic field.

My dissertation research focuses on the investigation of the transport and magnetic properties of transition metal and rare earth doped oxides, particularly SnO2 and HfO2 thin films. Cr- and Fe-doped SnO2 films were deposited on Al2O3 substrates by pulsed-laser deposition. Xray- diffraction patterns (XRD) show that the films have rutile structure and grow epitaxially along the (101) plane. The diffraction peaks of Cr-doped samples exhibit a systematic shift toward higher angles with increasing Cr concentration. This indicates that Cr dissolves in SnO2. On the other hand, there is no obvious shift of the diffraction peaks of the Fe-doped samples. The magnetization curves indicate that the Cr-doped SnO2 films are paramagnetic at 300 and 5 K. The Fe-doped SnO2 samples exhibit ferromagnetic behaviour at 300 and 5 K. Zero-field-cooled and field-cooled curves indicate super paramagnetic behavior above the blocking temperature of 100 K, suggesting that it is possible that there are ferromagnetic particles in the Fe-doped films. It was found that a Sn0.98Cr0.02O2 film became ferromagnetic at room temperature after annealing in H2. We have calculated the activation energy and found it decreasing with the annealing, which is explained by the increased oxygen vacancies/defects due to the H2 treatment of the films. The ferromagnetism may be associated with the presence of oxygen vacancies although AMR was not observed in the samples. Pure HfO2 and Gd-doped HfO2 thin films have been grown on different single crystal substrates by pulsed laser deposition. XRD patterns show that the pure HfO2 thin films are of single monoclinic phase. Gd-doped HfO2 films have the same XRD patterns except that their diffraction peaks have a shift toward lower angles, which indicates that Gd dissolves in HfO2. Transmission electron microscopy images show a columnar growth of the films. Very weak ferromagnetism is observed in pure and Gd-doped HfO2 films on different substrates at 300 and 5 K, which is attributed to either impure target materials or signals from the substrates. The magnetic properties do not change significantly with post deposition annealing of the HfO2 films.