Manufacturing companies are facing many challenges with globalisation, changing customer demands and technology development. In order to stay competitive, manufacturing companies have to constantly develop their processes and products, and at the same time generating innovations to meet future demands. This increasing demand for development is shifting the generation of innovations from single units to collaboration within the whole organisation. Technology roadmap is a strategic management tool to help organisations map the future and identify potential products and technology, determining needed resource allocations to meet future demands. Research regarding Technology roadmaps has previously been associated with exploratory innovations and development, not mentioning or discussing the use of it for exploitative development. This study will investigate Technology roadmaps for exploitative development, based on a single case study in a large high technology manufacturing company.  The results shows that manufacturing units have troubles with deciding appropriate detailed level in the map, and the purpose for exploitative development to illustrating what needs to be done in order to meet future demands, rather on aligning product development with long term business strategy that is associated with exploratory development. The findings from this study put the theoretical implications for Technology roadmap in a new categorization of Exploitative development and the need of research regarding different hierarchical roadmaps within an organisation. Practical implications from the study are highlighting challenges and purposes for exploitative development units to adapt and use technology roadmaps, and that there are major differences between exploratory development and exploitative development with designing and purpose of the technology roadmap.

O crescimento populacional e a forma como os recursos vem sendo explorados estão afetando diretamente o meio ambiente. O mercado de fibras naturais, por exemplo, movimenta milhões de dólares anualmente e uma considerável parte dessas fibras se transforma em rejeito. Essa grande quantidade de resíduo disponível motiva o estudo de compósitos reforçados com fibra natural, sendo esse reaproveitamento interessante tanto para a manutenção da sustentabilidade ambiental quanto para o desenvolvimento técnico e comercial de novos materiais com boas propriedades e custo reduzido. Neste trabalho, um resíduo industrial da empresa Tapetes São Carlos constituído principalmente de fibras de juta e polipropileno foi reaproveitado através da fabricação de material compósito, utilizando como matriz polipropileno homopolímero (PP), compatibilizante e nanocarbonato de cálcio (NCC). Os componentes foram misturados em extrusora duplarosca co-rotacional e os corpos de prova foram moldados por injeção. Para a melhora da dispersão do NCC na matriz um masterbatch foi previamente processado. Os compósitos foram inicialmente caracterizados por ensaios de tração e dureza e ensaio de ângulo de contato para avaliação da permeabilidade da superfície. Realizou-se ensaio de degradação acelerada e posterior reavaliação das propriedades em tração e permeabilidade dos compósitos degradados térmica e fotooxidativamente. Para a avaliação das possíveis degradações mecânica e térmica das fibras foi realizada inicialmente dissolução seletiva e posteriormente microscopia óptica e espectroscopia de infavermelho (FTIR) das fibras isoladas. A avaliação morfológica foi realizada por microscopia eletro nica de varredura (MEV). Com o processamento obtiveram-se compósitos com 50% em massa de resíduo, boa mistura dispersiva do NCC e não houve degradação térmica ou mecânica das fibras. Os compósitos apresentaram melhores propriedades mecânicas se comparados ao PP puro. O NCC atuou como reforço mecânico e no aumento da impermeabilidade. A fim de estudar a aplicabilidade comercial dos compósitos foi utilizado o método de Technology Roadmap (TRM). Esse estudo revelou o excelente potencial de aplicação comercial do material em diversos mercados, devido as suas propriedades e flexibilidade de processamento. / Population growth and the way resources are being exploited are directly affecting the environment. The natural fiber market, for example, is worth million dollars and a huge amount of the fibers becomes waste. This considerable amount of waste motivates the study of the fibers as a reinforcement in polymeric matrix, which benefits both the environmental sustainability and technical-commercial development of new materials with good properties and reduced cost. In this work, an industrial waste from the carpet manufacturer Tapetes São Carlos, consisting mainly of jute and polypropylene fibers, was recycled through the manufacture of a composite material using polypropylene homopolymer (PP), a compatibilizer and calcium nanocarbonate (NCC). The components were mixed in a co-rotational double-screw extruder and the specimens were produced by injection moulding. A masterbatch was previously processed to improve the NCC dispersion in the matrix. The composites were initially tested by tensile and hardness tests and by contact angle test to evaluate surface permeability. The specimens were exposed to accelerated weathering for revaluation of tensile and permeability properties of the thermaly and photooxidatively degraded specimens. A selective dissolution followed by optical microscopy and infra-red spectroscopy of the isolated fibers were performed for measuring the potential mechanical and thermal degradation of the fibers. The morphological evaluation was performed by scanning electron microscopy (SEM). The processing techniques resulted in composites with 50% (w/w) of waste and good dispertion of the NCC, and no thermal or mechanical degradation of the fibers was observed. The composites showed better mechanical properties than pure PP. The NCC acted as mechanical reinforcement and increased impermeability. A Technology Roadmap (TRM) method was used to study the commercial applicability of the composites. This study revealed an excellent potential of commercial application of the material in several markets due to its properties and processing flexibility.

Made available in DSpace on 2016-06-02T19:51:39Z (GMT). No. of bitstreams: 1 2495.pdf: 689346 bytes, checksum: 9c79c3f45b345f035630b8770d19f0b3 (MD5) Previous issue date: 2009-05-27 / Financiadora de Estudos e Projetos / The technology forecast and management methods have been considered by academics and managers important tools to support technology development. Generally the organizations, which are worried about this issues, needs data and information to look ahead and clarify technologies course before it happens. Considering that development s time has become shorter, these kind of methodologies may turn more and more important. Despite of these matters, it s rare to find papers and related cases to this subject in Brazil. That s why this study has the objective of collect and discuss methodologies, and right after that, compare the Technology Roadmap (TRM) to the CNPDIA s method of technology forecast and management. This TRM method is frequently presented in the related magazines. The work realized has compared the dimension of the TRM, considering some extras observations. These extras looks offered a more complete view and understanding of the environment in which the technology activities took place. The expected intention was to collaborate by analyzing some of the CNPDIA s characterizes. One extra hope is to inspire some discussion in the unit observed, based on this work. / Os métodos de prospecção e gestão de tecnologia são importantes instrumentos para a inovação em organizações que visam o desenvolvimento de pesquisas e tecnologia. Em geral, estas organizações precisam de dados, informações e orientações que embasem as decisões acerca das atividades que serão conduzidas. Considerando que as atividades de inovação tecnológica aceleraram-se nestas últimas décadas, reduzindo o tempo de desenvolvimento, a importância deste tipo de metodologia tende a aumentar. Entretanto, no Brasil ainda é escassa a literatura sobre o tema, com poucos relatos de utilização de algumas destas metodologias. Por isso, esta dissertação possui o objetivo de aprofundar este tema. Visa-se coletar e selecionar, das diferentes fontes identificadas, conteúdos relevantes sobre prospecção e gestão de tecnologia para compor uma densa revisão desta literatura e, em seguida, realizar a comparação entre o modelo de prospecção e gestão de tecnologia presente no Centro Nacional de Pesquisas e Desenvolvimento de Instrumentação Agropecuária CNPDIA e o método do Technology Roadmapping, método freqüente em revistas de referência no tema. A comparação foi baseada nas dimensões presentes no Technology Roadmaping, entretanto os limites dimensionais da metodologia foram extrapolados para aprofundar o conhecimento acerca do objeto de estudo. A partir desta compreensão, objetivou-se contribuir ao analisar algumas características desta importante unidade da Embrapa, o CNPDIA. Espera-se, também, que algumas das recomendações realizadas nesta dissertação possam ser alvo de debates na unidade pesquisada.

The present study presents a draft national CCT (Clean Coal Technologies) and CCS (Carbon Capture and Storage) technology roadmap to policy makers. Various technical and non-technical (economic and social) challenges that currently prevent CCT and CCS from being a widely used commercial technology are discussed and the goals for each research pathway are defined. The process of creating the roadmap started with a review and assessment of the existing national and international technology roadmaps which represent a global picture of the state of the art and national and international plans for future on CCT and CCS research development, demonstration and deployment (R&amp / D&amp / D). Following this step, the national situation, capacities and priorities were examined. Finally, R&amp / D&amp / D actions discussed in the existing roadmaps and/or new actions were carefully selected and suggested as a draft Turkish CCT and CCS Roadmap that needs further development and discussion by the input of interdisciplinary national stakeholders. As a conclusion a number of technical and non-technical suggestions are delivered.

Electricity generated from photovoltaics (PV) promises to satisfy the world's ever-growing thirst for energy without significant pollution and greenhouse gas emissions. At present, however, PV is several times too expensive to compete economically with conventional sources of electricity delivered via the power grid. To ensure long-term success, must achieve cost parity with electricity generated by conventional sources of electricity. This requires detailed understanding of the relationship between technology and economics as it pertains to PV devices and systems. The research tasks of this thesis focus on developing and using four types of models in concert to develop a complete picture of how solar cell technology and design choices affect the quantity and cost of energy produced by PV systems. It is shown in this thesis that high-efficiency solar cells can leverage balance-of-systems (BOS) costs to gain an economic advantage over solar cells with low efficiencies. This advantage is quantified and dubbed the "efficiency premium." Solar cell device models are linked to models of manufacturing cost and PV system performance to estimate both PV system cost and performance. These, in turn, are linked to a model of levelized electricity cost to estimate the per-kilowatt-hour cost of electricity produced by the PV system. A numerical PV module manufacturing cost model is developed to facilitate this analysis. The models and methods developed in this thesis are used to propose a roadmap to high-efficiency multicrystalline silicon PV modules that achieve cost parity with electricity from the grid. The impact of PV system failures on the cost of electricity is also investigated; from this, a methodology is proposed for improving the reliability of PV inverters.

Les procédés bipolaires semi-conducteurs complémentaires à oxyde de métal (BiCMOS) peuvent être considérés comme étant la solution la plus généralepour les produits RF car ils combinent la fabrication sophistiquée du CMOSavec la vitesse et les capacités de conduction des transistors bipolaires silicium germanium(SiGe) à hétérojonction (HBT). Les HBTs, réciproquement, sontles principaux concurrents pour combler partiellement l'écart de térahertzqui décrit la plage dans laquelle les fréquences générées par les transistors etles lasers ne se chevauchent pas (environ 0.3 THz à 30 THz). A_n d'évaluerles capacités de ces dispositifs futurs, une méthodologie de prévision fiable estsouhaitable. L'utilisation d'un ensemble hétérogène d'outils et de méthodes desimulations permet d'atteindre successivement cet objectif et est avantageusepour la résolution des problèmes. Plusieurs domaines scientifiques sont combinés, tel que la technologie de conception assistée par ordinateur (TCAO),la modélisation compacte et l'extraction des paramètres.Afin de créer une base pour l'environnement de simulation et d'améliorerla confirmabilité pour les lecteurs, les modèles de matériaux utilisés pour lesapproches hydrodynamiques et de diffusion par conduction sont introduits dèsle début de la thèse. Les modèles physiques sont principalement fondés surdes données de la littérature basées sur simulations Monte Carlo (MC) ou dessimulations déterministes de l'équation de transport de Boltzmann (BTE).Néanmoins, le module de TCAO doit être aussi étalonné sur les données demesure pour une prévision fiable des performances des HBTs. L'approchecorrespondante d'étalonnage est basée sur les mesures d'une technologie depointe de HBT SiGe pour laquelle un ensemble de paramètres spécifiques àla technologie du modèle compact HICUM/L2 est extrait pour les versionsdu transistor à haute vitesse, moyenne et haute tension. En s'aidant de cesrésultats, les caractéristiques du transistor unidimensionnel qui sont généréesservent de référence pour le profil de dopage et l'étalonnage du modèle. Enélaborant des comparaisons entre les données de références basées sur les mesureset les simulations, la thèse fait progresser l'état actuel des prévisionsbasées sur la technologie CAO et démontre la faisabilité de l'approche.Enfin, une technologie future de 28nm performante est prédite en appliquantla méthodologie hétérogène. Sur la base des résultats de TCAO, leslimites de la technologie sont soulignées. / Bipolar complementary metal-oxide-semiconductor (BiCMOS) processescan be considered as the most general solution for RF products, as theycombine the mature manufacturing tools of CMOS with the speed and drivecapabilities of silicon-germanium (SiGe) heterojunction bipolar transistors(HBTs). HBTs in turn are major contenders for partially filling the terahertzgap, which describes the range in which the frequencies generated bytransistors and lasers do not overlap (approximately 0.3THz to 30 THz). Toevaluate the capabilities of such future devices, a reliable prediction methodologyis desirable. Using a heterogeneous set of simulation tools and approachesallows to achieve this goal successively and is beneficial for troubleshooting.Various scientific fields are combined, such as technology computer-aided design(TCAD), compact modeling and parameter extraction.To create a foundation for the simulation environment and to ensure reproducibility,the used material models of the hydrodynamic and drift-diffusionapproaches are introduced in the beginning of this thesis. The physical modelsare mainly based on literature data of Monte Carlo (MC) or deterministicsimulations of the Boltzmann transport equation (BTE). However, the TCADdeck must be calibrated on measurement data too for a reliable performanceprediction of HBTs. The corresponding calibration approach is based onmeasurements of an advanced SiGe HBT technology for which a technology specific parameter set of the HICUM/L2 compact model is extracted for thehigh-speed, medium-voltage and high-voltage transistor versions. With thehelp of the results, one-dimensional transistor characteristics are generatedthat serve as reference for the doping profile and model calibration. By performingelaborate comparisons between measurement-based reference dataand simulations, the thesis advances the state-of-the-art of TCAD-based predictionsand proofs the feasibility of the approach.Finally, the performance of a future technology in 28nm is predicted byapplying the heterogeneous methodology. On the basis of the TCAD results,bottlenecks of the technology are identified. / Bipolare komplementäre Metall-Oxid-Halbleiter (BiCMOS) Prozesse bietenhervorragende Rahmenbedingungen um Hochfrequenzanwendungen zurealisieren, da sie die fortschrittliche Fertigungstechnik von CMOS mit derGeschwindigkeit und Treiberleistung von Silizium-Germanium (SiGe) Heterostruktur-Bipolartransistoren (HBTs) verknüpfen. Zudem sind HBTs bedeutendeWettbewerber für die teilweise Überbrückung der Terahertz-Lücke, derFrequenzbereich zwischen Transistoren (< 0.3 THz) und Lasern (> 30 THz).Um die Leistungsfähigkeit solcher zukünftigen Bauelemente zu bewerten, isteine zuverlässige Methodologie zur Vorhersage notwendig. Die Verwendungeiner heterogenen Zusammenstellung von Simulationstools und Lösungsansätzenerlaubt es dieses Ziel schrittweise zu erreichen und erleichtert die Fehler-_ndung. Verschiedene wissenschaftliche Bereiche werden kombiniert, wie zumBeispiel der rechnergestützte Entwurf für Technologie (TCAD), die Kompaktmodellierungund Parameterextraktion.Die verwendeten Modelle des hydrodynamischen Simulationsansatzes werdenzu Beginn der Arbeit vorgestellt, um die Simulationseinstellung zu erläuternund somit die Nachvollziehbarkeit für den Leser zu verbessern. Die physikalischenModelle basieren hauptsächlich auf Literaturdaten von Monte Carlo(MC) oder deterministischen Simulationen der Boltzmann-Transportgleichung(BTE). Für eine zuverlässige Vorhersage der Eigenschaften von HBTs muss dieTCAD Kon_guration jedoch zusätzlich auf der Grundlage von Messdaten kalibriertwerden. Der zugehörige Ansatz zur Kalibrierung beruht auf Messungeneiner fortschrittlichen SiGe HBT Technologie, für welche ein technologiespezifischer HICUM/L2 Parametersatz für die high-speed, medium-voltage undhigh-voltage Transistoren extrahiert wird. Mit diesen Ergebnissen werden eindimensionaleTransistorcharakteristiken generiert, die als Referenzdaten fürdie Kalibrierung von Dotierungspro_len und physikalischer Modelle genutztwerden. Der ausführliche Vergleich dieser Referenz- und Messdaten mit Simulationengeht über den Stand der Technik TCAD-basierender Vorhersagenhinaus und weist die Machbarkeit des heterogenen Ansatzes nach.Schlieÿlich wird die Leistungsfähigkeit einer zukünftigen Technologie in28nm unter Anwendung der heterogenen Methodik vorhergesagt. Anhand derTCAD Ergebnisse wird auf Engpässe der Technologie hingewiesen.