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Orientador: Dante Luis Chinaglia / Banca: Clarissa de Almeida Olivati / Banca: Luiz Francisco Malmonge / Resumo: Neste trabalho foi desenvolvido um dispositivo eletroluminescente (EL) constituído de um compósito híbrido (CH), formado por uma blenda polimérica e um material EL inorgânico. A blenda é composta por um polímero condutor, a poli(o-metoxianilina) (POMA) dopada com ácido tolueno sulfônico (TSA), e um polímero isolante, o poli(fluoreto de vinilideno-co-trifluoretileno) (P(VDF-TrFE)). A esta blenda é acrescentado um material EL inorgânico, o silicato de zinco dopado com Manganês (Zn2SiO4:Mn), formando assim, o compósito híbrido. O dispositivo foi construído depositando o compósito por drop casting sobre um substrato de óxido de estanho dopado com flúor (FTO) e após cristalização em uma estufa foi depositado um eletrodo de metal por evaporação à vácuo formando uma estrutura tipo "sanduíche". Neste trabalho foram construídos dispositivos com eletrodo superior de Alumínio (Al) e Ouro (Au), denominados: FTO/CH/Al e FTO/CH/Au. O comportamento elétrico dos dispositivos de FTO/CH/Al foram analisados aplicando-se as teorias de Emissão Termoiônica, Emissão Schottky e Emissão Poole-Frenkel, o que tornou possível encontrar alguns parâmetros como: altura da barreira para a junção metal/CH, condutividade do CH e fator de retificação. O dispositivo de FTO/CH/Au foi caracterizado pela técnica de espectroscopia de impedância, sendo obtido também a altura da barreira para a junção metal/CH, a condutividade do CH, além da constante dielétrica do compósito e como variam esses dois últimos parâmetros com a temperatura. A aplicação das teorias de Emissão Termoiônica, Emissão Schottky e Emissão Poole-Frenkel produziram resultados semelhantes aos obtidos pela técnica de espectroscopia de impedância. Os espectros de luminescência apresentaram um pico em l = 528 nm com estabilidade temporal de emissão comparável a dos dispositivos inorgânicos puros. / Abstract: In this work was developed an electroluminescent (EL) device made up with a hybrid composite (CH), that is formed by a polymeric blend and an inorganic EL material. The conductive polymer, poly(o-methoxyaniline) (POMA) doped with p-Toluene sulphonic acid (TSA), and an isolating polymer, the poly(vinylidenefluoride-co-trifluoroethylene) (P(VDFTrFE)), was used to make the polymer blend. An inorganic EL material, the zinc silicate manganese-doped (Zn2SiO4:Mn), was added to the blend, forming the hybrid composite. The composite was deposited by drop-casting over a Fluoride Tin Oxide substrate (FTO) and after the crystallization in an oven a metal electrode was deposited by vacuum evaporation, forming a type "sandwich" structure. In this work were constructed different devices. Aluminum (Al) and Gold (Au) were used as upper electrodes, therefore the device structures were: FTO/CH/Al and FTO/CH/Au. To analyze the electrical behavior of the FTO/CH/Al device was applied the theories of Thermionic Emission, Schottky Emission and Poole- Frenkel Emission. Using these theories was possible to obtain parameters such as; the barrier height from the metal/CH junction, CH conductivity and diode rectifier factor. The FTO/CH/Au device was characterized using the impedance spectroscopy technique. For this device was also possible to obtain the barrier height from the metal/CH junction, CH conductivity and CH dielectric constant. For the last two parameters the dependence with the temperature were also observed. The application of the theories of Thermionic Emission, Schottky Emission and Poole-Frenkel Emission produced similar results to that obtained by the impedance spectroscopy technique. The luminescence spectra, for the devices, showed a peak at l = 528 nm with emission stability in time that it is comparable of pure inorganic devices. / Mestre

An equilibrium multielectron bubble (MEB) in liquid helium is a fascinating object with a spherical two-dimensional electron gas on its surface. After it was first observed a few decades ago, a plethora of physical properties of MEBs, for example, a tunable surface electron density, have been predicted. In this thesis, we will discuss two new methods to create MEBs in liquid helium. Before the discussion, the way to generate a large number of electrons in a low temperature system will be discussed, including thermionic emission and field emission in helium. In the first new method to make MEBs, we used a dome-shaped cell filled with superfluid helium in which an MEB was created and confined at the dome. The lifetime of the MEB was substantially longer than the previously reported observations of MEBs. In the second method, MEBs were extracted from the vapor sheath around an electrically heated tungsten filament submerged in liquid helium, either by a high electric field (up to 15 kV/cm) or by a sudden increase of a negative pressure in liquid helium. High-speed photography was used to capture the MEB's motion. A method to determine the number of electrons was developed by monitoring the oscillations of the MEBs. Finally, an electromagnetic trap was designed to localize the MEBs created using the second method, which was important for future studies of the properties of MEBs. / Physics

No description available.

Spacecraft experience electric currents on conductive materials exposed to sunlight, which introduces noise in scientific data. These currents are mainly due to the photoelectric effect and should therefore be proportional to the inverse square heliocentric distance. However, measurements on the Solar Orbiter spacecraft suggests that these currents deviate from this proportionality, especially at perihelia. This paper aims to improve the understanding of how and why these induced currents vary by creating a model to describe the phenomenon. The investigation was based on thermal bending, thermionic emission, the photoelectric effect, outgassing, and a temperature dependence of the work function. Through numerical approximation, the thermal bending of the approximately 6m modeled antennas was estimated to be almost three meters at perihelion and the estimated outgassing fit the secular change in the data well. The direct impact of thermionic emissions was determined to be negligible. The final model was created utilizing a secular fit of the outgassing, the variation in the cross-section due to thermal bending, a yield proxy was created to model the impact of the work function temperature dependence, and the MgII index as a proxy for the solar EUV intensity. The final model was approximately accurate within 10%. Several future improvements are discussed, such as the inclusion of secondary emission or the empirical determination of the model deviation.

Amorphous Silicon(a-Si) films have attracted the attention of several investigators as it is an economical material for devices. One of the problems that is addressed is the doping of these films after they are prepared. In this thesis, we investigated the effects of doping amorphous Sil­icon films(prepared by r.f. sputtering) with Aluminium(Al) by ther­mal diffusion. Amorphous Silicon films have been prepared on glass substrates at optimal process parameters. Then, the a-Si films are coated with Al by vacuum evaporation and subjected to heating in N2 atmosphere in the temperature range 300°C to 600°C for different durations. After etching Al layer, it has been found that some of the films which are heated around 550°C contain filament like polycrystalline regions surrounding islands of a-Si. This structure has been confirmed through Scanning Electron Mi-croscope(SEM) photographs and electrical conductivity measurements. SEM photographs indicate that, bright regions of amorphous mate­rial are surrounded by dark regions of relatively higher conducting boundaries. The electrical conductivity study shows that there is sharp increase in conductivity of Al doped films, which is attributed to the conduct­ing polycrystalUne filament. A simple model has been proposed to explain the variation of con­ductivity of these transformed films, with process parameters and with temperature. Schottky barrier diodes have been fabricated using these trans­formed materials and their characteristics explained.

Made available in DSpace on 2014-06-11T19:25:31Z (GMT). No. of bitstreams: 0 Previous issue date: 2009-10-05Bitstream added on 2014-06-13T18:53:36Z : No. of bitstreams: 1 stefanelo_jc_me_rcla.pdf: 1971755 bytes, checksum: f2545c6a190dc7a872bf14f2c2b4fce6 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Neste trabalho foi desenvolvido um dispositivo eletroluminescente (EL) constituído de um compósito híbrido (CH), formado por uma blenda polimérica e um material EL inorgânico. A blenda é composta por um polímero condutor, a poli(o-metoxianilina) (POMA) dopada com ácido tolueno sulfônico (TSA), e um polímero isolante, o poli(fluoreto de vinilideno-co-trifluoretileno) (P(VDF-TrFE)). A esta blenda é acrescentado um material EL inorgânico, o silicato de zinco dopado com Manganês (Zn2SiO4:Mn), formando assim, o compósito híbrido. O dispositivo foi construído depositando o compósito por drop casting sobre um substrato de óxido de estanho dopado com flúor (FTO) e após cristalização em uma estufa foi depositado um eletrodo de metal por evaporação à vácuo formando uma estrutura tipo “sanduíche”. Neste trabalho foram construídos dispositivos com eletrodo superior de Alumínio (Al) e Ouro (Au), denominados: FTO/CH/Al e FTO/CH/Au. O comportamento elétrico dos dispositivos de FTO/CH/Al foram analisados aplicando-se as teorias de Emissão Termoiônica, Emissão Schottky e Emissão Poole-Frenkel, o que tornou possível encontrar alguns parâmetros como: altura da barreira para a junção metal/CH, condutividade do CH e fator de retificação. O dispositivo de FTO/CH/Au foi caracterizado pela técnica de espectroscopia de impedância, sendo obtido também a altura da barreira para a junção metal/CH, a condutividade do CH, além da constante dielétrica do compósito e como variam esses dois últimos parâmetros com a temperatura. A aplicação das teorias de Emissão Termoiônica, Emissão Schottky e Emissão Poole-Frenkel produziram resultados semelhantes aos obtidos pela técnica de espectroscopia de impedância. Os espectros de luminescência apresentaram um pico em l = 528 nm com estabilidade temporal de emissão comparável a dos dispositivos inorgânicos puros. / In this work was developed an electroluminescent (EL) device made up with a hybrid composite (CH), that is formed by a polymeric blend and an inorganic EL material. The conductive polymer, poly(o-methoxyaniline) (POMA) doped with p-Toluene sulphonic acid (TSA), and an isolating polymer, the poly(vinylidenefluoride-co-trifluoroethylene) (P(VDFTrFE)), was used to make the polymer blend. An inorganic EL material, the zinc silicate manganese-doped (Zn2SiO4:Mn), was added to the blend, forming the hybrid composite. The composite was deposited by drop-casting over a Fluoride Tin Oxide substrate (FTO) and after the crystallization in an oven a metal electrode was deposited by vacuum evaporation, forming a type “sandwich” structure. In this work were constructed different devices. Aluminum (Al) and Gold (Au) were used as upper electrodes, therefore the device structures were: FTO/CH/Al and FTO/CH/Au. To analyze the electrical behavior of the FTO/CH/Al device was applied the theories of Thermionic Emission, Schottky Emission and Poole- Frenkel Emission. Using these theories was possible to obtain parameters such as; the barrier height from the metal/CH junction, CH conductivity and diode rectifier factor. The FTO/CH/Au device was characterized using the impedance spectroscopy technique. For this device was also possible to obtain the barrier height from the metal/CH junction, CH conductivity and CH dielectric constant. For the last two parameters the dependence with the temperature were also observed. The application of the theories of Thermionic Emission, Schottky Emission and Poole-Frenkel Emission produced similar results to that obtained by the impedance spectroscopy technique. The luminescence spectra, for the devices, showed a peak at l = 528 nm with emission stability in time that it is comparable of pure inorganic devices.

Microwave tubes are the choice of a wide range of high power and millimeter wave applications in radar, electronic warfare and communication systems. Advances in these devices are due to device innovation, improved modeling, and development of advanced materials. In a microwave tube, electron emitter is the source of electron beam and it is one of the vital components determining the life & performance of the device. High power, high frequency microwave tubes require electron emitters with high emission density. The present thesis aims at developing the materials for high emission density electron emitters. It is aimed to improve the emission density of thermionic cathodes for use in conventional microwave tubes and to develop cold emitters like ferroelectric cathodes for high power microwave devices. The work reported in the present thesis is a modest attempt of the author towards this aim. The thesis is organized in six chapters. Chapter 1 gives a brief introduction of thermionic and ferroelectric emitters. Different types of electron emission mechanisms and a brief background of thermionic and ferroelectricemitters are discussed in this chapter. The genesis of the problem taken up and its importance as well as the plan and scope of the work is also given in this chapter. In Chapter 2, the basic experimental techniques used in the present work are discussed. Preparation of mixed metal matrix and M- type dispenser cathodes and their characterization techniques has been discussed in this chapter. Subsequently, ferroelectric materials preparation and characterization for their material properties and electron emission has been discussed. A brief introduction to FEM software ANSYS, used for thermal analysis of dispenser cathodes and electrostatic field analysis of ferroelectric cathodes, has been given at the end of this chapter. Thermal analysis, development process, emission characterization, work function distribution, of W-Ir mixed metal matrix (MM type) cathodes and a simple innovative technique to estimate the barium evaporation rate from the emission data of the dispenser cathodes is presented in Chapter 3. Under normal microwave tube operating conditions, the cathode of the electron gun has to be heated up to 1050°C to obtain stable thermionic electron emission. Thermal analysis is a first step in the development process of cathodes, optimizing its structure for improved performance with respect to its operating power, warm-up time and efficiency. Thermal analysis of a dispenser cathode in electron gun environment using the FEM software ANSYS and its experimental validation are presented. Development of porous W-Ir mixed metal matrix material required for dispenser cathode applications has been discussed. Determination of pore size, pore density and pore uniformity has been carried out. The performance of the cathodes made with these pellets is at par with the results reported in the literature. The surface of mixed metal pellet is an inherently two-phase structure consisting of tungsten solid solution phase and W-Ir ε phase causing more spread in the spatial distribution of work function. W-Ir mixed metal matrix cathodes have been realized and their work function distribution has been determined form the measured I-V characteristics. Also in this chapter, a novel technique for estimation of barium evaporation rate for dispenser cathodes from their I-V characteristics is presented. Results of life test carried out on these cathodes are given at the end of the chapter. In Chapter 4, work carried out on enhancing the emission properties of mixed metal matrix cathodes by suitably modifying the impregnant mix is discussed. W-Ir MM type cathodes discussed in the previous chapter give a emission current density of ~ 7.5A/cm2 with a work function of 1.99 eV. Thesevalues are very close to that of B-type cathode. In this chapter, it is explored to suitably dope the 5BaO:3CaO:2Al2O3 impregnant mix to reduce the work function of W-Ir cathodes. Lithium and Scandium oxides have been added to the 5:3:2 imp regnant mix. Lithium oxide doped impregnated MM type cathodes have given more than 30 A/cm2 current density at 1050oC. For scandium oxide doped MM type cathodes current density has increased to 15 A/cm2 at the same temperature. In Chapter 5, Electron emission from the ferroelectric cathodes has been discussed. FEM simulation of Ferroelectric cathodes to study the electrical excitation effects on emission. Triple point electric field in FE Cathodes is very large and can lead to field emission from the metallic grid at triple points. FEM simulation has been carried out to find out the effect of grid thickness on triple junction electric field using ANSYS software. From FEM modeling it is also seen that if a dielectric layer of lower dielectric constant (εr≤10) is placed between the grid and the ferroelectric material the triple junction electric field increases three fold. Use of dielectric layer can also reduce the secondary electron coefficient (δ) and surface plasma generation. Lanthanum doped PZT has been chosen for the study and these materials have been tested in diode configuration for emission characterization in demountable vacuum systems. Repeatable electron emission has been achieved for all the three compositions of PLZT (x/65/35) material (x = 7, 8, 9). However, it has been observed that when the ferroelectric is subjected to repetitive unipolar electrical excitation, fatigue is set in and cathode material is cracking. To study the effect of domain switching on the residual stress in the ferroelectric material, XRD studies have been carried out. Shift in XRD peaks for fresh and emission tested samples has been used to calculate the residual stress developed in the samples. Details of High current switch realized using ferroelectric cathodes have been discussed. Chapter 6 gives the Summary of the work done and suggestions for further research on W-Ir mixed metal matrix cathodes and ferroelectric cathodes.

This work deals with the theoretical foundations of electron emission into vacuum, various types of emissions, focused on the cold-emission and Schottky emission and the principle of quantum tunneling. The next part deals with the technical implementation of electron sources with a detailed study of the methodology of laboratory production of cathodes by electrochemical etching and construction of electron microscopes, using field-emission sources. This work also contains methods for measuring, processing and evaluation of electrical characteristics of emission sources.