The role of sensor technology is obvious in improvement and optimization of many industrial processes. The sensor films, which are considered the core of chemical sensors, have the capability to detect the presence and concentration of a specific chemical substance. Such sensor films achieve selectivity by detecting the interaction of the specific chemical substance with the sensor material through selective binding, adsorption and permeation of analyte. This research focuses on development and verification of a comprehensive mathematical model of mixed metal oxide thin film growth using spray pyrolysis technique (SPT). An experimental setup is used to synthesize mixed metal oxide films on a heated substrate. The films are analyzed using a variety of characterization tools. The results are used to validate the mathematical model. There are three main stages to achieve this goal: 1) A Lagrangian-Eulerian method is applied to develop a CFD model of atomizing multi-component solution. The model predicts droplet characteristics in flight, such as spatial distribution of droplet size and concentration. 2) Upon reaching the droplets on the substrate, a mathematical model of multi-phase transport and chemical reaction phenomena in a single droplet is developed and used to predict the deposition of thin film. The various stages of droplet morphology associated with surface energy and evaporation are predicted. 3) The processed films are characterized for morphology and chemical composition (SEM, XPS) and the data are used to validate the models as well as investigate the influence of process parameters on the structural characteristics of mixed metal oxide films. The structural characteristics are investigated of nano structured thin films comprising of ZnO, SnO2, ZnO+In2O3 and SnO2+In2O3 composites. The model adequately predicts the size distribution and film thickness when the nanocrystals are well-structured at the controlled temperature and concentration.

ITO is widely regarded as the optimal TCO for serving as front window layer in PSK/c-Si tandem solar cells. It is known to effectively mitigate several stability issues present in perovskite solar cells while demonstrating excellent lateral conductivities and optical transparency across the entire solar spectrum. However, due to the damaging effects of traditional magnetron sputtering methods on the underlying cell precursor and the limited range of annealing temperatures viable for maintaining the stability of Perovskite Solar cells, realizing the full capability of ITO layer is constrained. This investigation focuses on developing and optimizing the front Indium Tin Oxide (ITO) layer properties for high-efficiency monolithic Perovskite/PERC tandem solarcells. The study employs two widely employed industrial techniques, Magnetron Sputtering and Screen Printing for the deposition of ITO thin-films and subsequent metallization of Ag front contacts. The sputtering process parameters, namely the carrier speed, O2 : Ar ratio, and the sputter power were varied to obtain an optimized ITO layer, which exhibited a thickness of 53nm, Rsheet of 107 ohm/□, mobility of 37 cm2/V s, and 90 % average optical transparency between 400−1200nm. A low contact resistivity of 5.4mΩ·cm2 was achieved between the ITO and metal contacts which is the lowest reported value for ITO annealed at low temperature (140 °C). Champion cells, featuring Perovskite on Ohmic substrate and 2T perovskite/PERC tandem cells, exhibited high VOC values of 1.116 V and 1.75 V on 0.97 cm2 cell aperture areas and cell efficiencies of 17.2 % and 23.85 %. Additionally, a large area (158.7 cm2) tandem cell was also fabricated which demonstrated an excellent VOC of 1.75 V . The results of this investigation demonstrates the versatility of ITO layer properties achievable at low-temperatures through Magnetron sputtering and underscores the potential of existing commercialized technologies for the fabrication of high-efficiency tandem solar cells. / ITO anses allmänt vara den optimala TCO för användning som frontfönsterskikt i PSK/c-Si tandemsolceller. Den är känd för att effektivt mildra flera stabilitetsproblem som finns i perovskitsolceller samtidigt som den uppvisar utmärkt lateral konduktivitet och optisk transparens över hela solspektrumet. På grund av de skadliga effekterna av traditionella magnetronförstoftningsmetoder på den underliggande cellprekursorn och det begränsade intervallet av glödgningstemperaturer som är användbara för att upprätthålla stabiliteten hos perovskitsolceller, begränsas dock ITO-skiktens fulla kapacitet. Denna undersökning fokuserar på att utveckla och optimera egenskaperna hos det främre Indium Tin Oxide (ITO)-skiktet för högeffektiva monolitiska Perovskite/PERC tandemsolceller. I studien används två allmänt använda industriella tekniker, magnetronförstoftning och screentryckning, fördeponering av ITO-tunnfilmer och efterföljande metallisering av Ag-frontkontakter. Parametrarna för sputteringsprocessen, nämligen bärarhastigheten, förhållandet O2 : Ar och sputterkraften varierades för att få ett optimerat ITO-lager, som uppvisade en tjocklek på 53nm, Rsheet på 107 ohm/□, rörlighet på 37 cm2/V s och 90 % genomsnittlig optisk transparens mellan 400 − 1200 nm. En låg kontaktresistivitet på 5.4mΩ.cm2 uppnåddes mellan ITO och metallkontakterna, vilket är de lägstarapporterade värdena för ITO glödgat vid låg temperatur (140 °C). Champion-cellerna, med perovskit på ohmskt substrat och 2T perovskit/PERC tandemkonfigurationer, uppvisade höga VOC-värden på 1.116 V och 1.75 V på 0.97 cm2 cellaperturområden och cellverkningsgrader på 17.2 % och 23.85 %. Dessutom tillverkades en tandemcell med stor area (158.7 cm2) som uppvisade en utmärkt VOC på 1.75 V . Resultaten av denna undersökning visar mångsidigheten hos ITO-skiktets egenskaper som kan uppnås vid låga temperaturer genom magnetronförstoftning och understryker potentialen hos befintliga kommersialiserade tekniker för tillverkning av högeffektiva tandemsolceller.

The increasing energy demand, combined with the use of harmful non-renewable energy sources calls for the search of alternative methods to cover our energy need.Renewable energy can be harvested in different ways, through the movement of wind and water, biomass, or directly from the rays of the sun, as in the case of photovoltaic (PV) devices. Whilst crystalline silicon (c-Si) is the most common absorber used for solar cells, other technologies are emerging. Solar cells with copper indium gallium diselenide (CIGS) as an absorber have the possibility of being flexible, which is an advantage due to the many more application possibilities that appear compared to the rigid and heavy c-Si solar cells. CIGS solar cells have some long-term stability issues, especially regarding ingression of atmospheric species through the front contact layer. This calls for further research in the front contact of the CIGS solar cell, exploring alternative materials to prevent degradation. The front contact of a solar cell must be both optically transparent and conduct electricity. Transparent conductive oxides (TCO) are materials characterized by the ability to conduct electricity, while also possessing a certain degree of optical transparency. The combination of conductivity and transparency makes TCOs ideal as front contacts in solar cells. A very common TCO for front contacts in CIGS solar cells is aluminum-doped zinc oxide (AZO) due to its low cost, good electrical conductivity and optical transparency. Because of its low resistance to degradation in humid environments more robust TCO alternatives, such as indium-doped tin oxide (ITO), are being investigated. Indium-doped tin oxide possesses similar electrical and optical properties as AZO, but better stability in humid environments.The ITO was deposited through RF magnetron sputtering, on a glass substrate to be able to measure optical properties. Initially, experiments focusing on oxygen content in the deposition atmosphere were done, together with a reproducibility experiment. This gave useful information about sputtering parameters and stability of the deposition. Thereon, an experiment was done varying three parameters: oxygen content in deposition atmosphere, sputtering power and temperature of substrate. A statistical software was used to analyze the data, identifying the effects of the changing parameters. The best performing samples were made with an oxygen content of 0,4-0,6 vol%. A high sensibility for oxygen in the system was also observed, as a result of the initial reproducibility experiments. This led to the introduction of a sacrificial deposition step after the machine had been shut down. Optimal substrate temperature was around 150°Cand it was not possible to go higher due to sensibility of the underlying solar cell layers.A lower threshold for the film thickness, located somewhere between 125 and 175 nm, was observed. Films with thickness below this threshold experienced a large resistivityincrease. Further depositions with higher oxygen content are advised to see if the properties of the films further improve.

Due to their low-temperature processing capability and ionic bonding configuration, amorphous oxide semiconductors (AOS) are well suited for applications within future mechanically flexible electronics. Over the past couple of years, amorphous zinc tin oxide (ZTO) has been proposed as indiumand gallium-free and thus more sustainable alternative to the widely deployed indium gallium zinc oxide (IGZO). The present study specifically focuses on the strain-dependence of elastic and electrical properties of amorphous zinc tin oxide thin-films sputtered at room temperature. Corresponding MESFETs have been compared regarding their operation stability under mechanical bending for radii ranging from 5 to 2 mm. Force-spectroscopic measurements yield a plastic deformation of ZTO as soon as the bending-induced strain exceeds 0.83%. However, the electrical properties of ZTO determined by Hall effect measurements at room temperature are demonstrated to be unaffected by residual compressive and tensile strain up to 1.24 %. Even for the maximum investigated tensile strain of 1.26 %, the MESFETs exhibit a reasonably consistent performance in terms of current on/off ratios between six and seven orders of magnitude, a subthreshold swing around 350 mV/dec and a field-effect mobility as high as 7.5 cm2V−1s−1. Upon gradually subjecting the transistors to higher tensile strain, the channel conductivity steadily improves and consequently, the field-effect mobility increases by nearly 80% while bending the devices around a radius of 2 mm. Further, a reversible threshold voltage shift of about −150 mV with increasing strain is observable. Overall, amorphous ZTO provides reasonably stable electrical properties and device performance for bending-induced tensile strain up to at least 1.26% and thus represent a promising material of choice considering novel bendable and transparent electronics.

No description available.

Acid/Base characterizations of metal oxide surfaces are often used to explain their catalytic behavior. However, the vast majority of these studies have been performed on powders or supported oxides, and there is very little information available in the literature on the interaction of acid/base probe molecules with well-defined oxide surfaces of known coordination geometry and oxidation state. The well-defined, single crystal surfaces of Cu₂O (111), SnO₂ (110), and Cr₂O₃ (101̲2) were investigated for their acid/base properties by the interactions between the probe molecules and the well-defined surface features. The adsorption of NH₃ at cation sites was used to characterize the Lewis acidity of SnO₂ (110) and Cu₂O (111) surfaces. The adsorption of CO₂, a standard acidic probe molecule, was used to characterize the Lewis basicity of the oxygen anions on SnO₂ (110), Cu₂O (111) , and Cr₂O₃ (101̲2) surfaces. BF₃, while not a standard probe molecule, has been tested as a probe of the Lewis basicity of the oxygen anions on SnO₂ (110) and Cr₂O₃ (101̲2). By studying probe molecules on well-defined metal oxide surfaces with known coordination geometry and oxidation state, an overall evaluation of NH₃, CO₂, and BF₃ as probe molecules can be made using the surfaces studied. NH₃ probed differences in Lewis acidity of Sn cations on SnO₂ (110), which had differences in coordination environments and oxidation states. But, NH₃ adsorption failed to provide any direct information on differences in Lewis acidity of Cu cations in different local coordination geometries on Cu₂O (111). CO₂ is a poor probe of the Lewis basicity of oxygen anions on the metal oxide surfaces studied here. CO₂ does not strongly adsorb to either SnO₂ (110) or Cu₂O (111). On Cr₂O₃ (101̲2), CO₂ does interact with oxygen sites but in two different coordinations, which vary with surface condition, making a comparison of basicity difficult. In the cases studied here, CO₂ either does not adsorb, or it does not provide a clear set of results that can be related simply to Lewis basicity. BF₃ seems to be a much better probe of the Lewis basicity than CO₂ for the well-defined metal oxide surfaces studied here. On SnO₂ (110) and Cr₂O₃ (101̲2), the boron atom of BF₃ directly interacts with oxygen sites by accepting their electrons. BF₃ thermal desorption seems to provide a direct measure of the Lewis basicity of different surface oxygen species as long as they are thermally-stable in vacuum. / Ph. D.

Metal Oxide (MO)semiconductors are one of the most widely used materials in commercial gas sensor devices. The basic principle of chemoresistive gas sensor operation stems on the high sensitivity of electrical resistance to ambient gaseous conditions. Depending on whether the oxide is "p type" or "n type", the resistance increases (or decrease), when placed in atmosphere containing reducing (or oxidizing) gases. The study of conductometric metal oxide semiconductor gas sensors has dual importance in view of their technological device applications and understanding fundamental MO-gas interactions. Metal oxides based sensors offer high thermal, mechanical and chemical stability. A large number of MOs show good sensitivities to various gases like CO, NOX, SOX, NH3, alcohols and other Volatile Organic Compounds (VOCs). VOCs are very common hazardous pollutants in the environment. Gas sensors are in great demand for their various applications such as food quality control, fermentation industries, road safety, defence, environmental monitoring and other chemical industries. The aim of the study is to explore the possibility of advancements in semiconducting MO based gas sensor devices through tuning microstructural parameters along with chemical dopants or additives. And further to investigate the underlying mechanism of conductometric MO gas sensors. The novel synthesis method employed is based on the solution combustion method coupled with ultrasonically nebulized spray pyrolysis technique. The well studied SnO2 and relatively unexplored Cr2O3 oxide systems are selected for the study. The non-equilibrium processing conditions result in unique microstructure and defect chemistry. In addition, using this technique MO - Reduced Graphene Oxide (RGO) nanocomposite films has also been fabricated and its application to room temperature gas sensor devices is demonstrated. The thesis comprises of seven chapters. the following section describe the summery of individual chapters. The Chapter 1 describes the introduction and background literature of this technology. A brief review of developments in gas sensor technology so far has been enlisted. This chapter also gives a glimpse of applications of MO semiconductors based sensors. The underlying mechanism involved in the sensing reaction and the primary factors influencing the response of a gas sensor device are enlisted. Further in the later part of the chapter focused the material selection criteria, effect of additives/dopants and future prospects of the technology. The end of this chapter highlights the objective and scope of the work in this dissertation. In the Chapter 2 the the materials selection, characterization techniques and particularly the experimental setups used are elaborated. This includes the deposition method used, which is developed in our group and the the in house built gas sensing system including its working principles and various issues have been addressed. The Ultrasonic Nebulized Spray Pyrolysis of Aqueous Combustion Mixture (UNSPACM) is a novel deposition method devised, which is a combination of conventional spray pyrolysis and solution combustion technique. Spray pyrolysis is versatile, economic and simple technique, which can be used for large area deposition of porous films. The intention is to exploit the exothermicity of combustion reaction in order to have high crystallinity, smaller crystallite size with high surface area, which are extremely important in gas sensor design and its efficiency. Further the gas sensing system and its operation are discussed in detail including the advantages of vertical sensing chamber geometry, wider analyte concentration range (ppm to percentage) obtained through vapor pressure data and simultaneous multi sensor characterization allowing better comparison. Here in this work, Chromium oxide (Cr2O3) and Tin oxide (SnO2) are selected as gas sensing materials for this work as a p-type and n-type metal oxide semiconductors respectively. Nevertheless Cr2O3 is a less explored gas sensing material as compared to SnO2, which is also being used in many commercially available gas sensor devices. Thus, studying and comparing gas sensing properties of a relatively novel and a well established material would justify the potential of the novel deposition technique developed. In Chapter 3, the effect of exothermic reaction between oxidizer and fuel, on the morphology, surface stoichiometry and observed gas sensing properties of Cr2O3 thin films deposited by UNSPACM, is studied. An elaborative study on the structural, morphological and surface stoichiometry of chromium oxide films is undertaken. Various deposition parameters have been optimized. An extensive and systematic gas sensing study is carried out on Cr2O3 films deposited, to achieve unique microstructure. The crystallinity and microstructure are investigated by varying the deposition conditions. Further, the effect of annealing in oxygen gas atmospheres on the films was also investigated. The gas sensing properties are studied for various VOCs, in temperature range 200 - 375 oC. The possible sensing mechanism and surface chemical processes involved in ethanol sensing, based on empirical results, are discussed. In chapter 4, the effect of 1% Pt doping on gas sensing properties of Cr2O3 thin films prepared by UNSPACM, is investigated. The chemical analysis is done using x-ray photoelectron spectroscopy to find the chemical state of Pt and quantification is done. The gas sensing is done towards gases like NO2, Methane and Ethanol. The enhancement in sensitivity and remarkable reduction in response as well as recovery times have been modeled with kinetic response analysis to study the variation with temperature as well as concentration. Further the analysis of observations and model fittings is discussed. The Chapter 5 deals with the defects induced ferromagnetism and gas sensing studies SnO2 nanoparticles prepared by solution combustion method. The structural, chemical analysis of as-synthesized and annealed SnO2 nanoparticles reveal gradual reduction in defect concentration of as-prepared SnO2. The findings of various characterization techniques along with optical absorption and magnetic studies to investigate the defect structure of the material are presented. As defects play crucial role in gas sensing properties of the metal oxide material, the defect induced room temperature ferromagnetism in undoped SnO2 has been used as a potential tool to probe the evidence of the defects. Finally a correlation is established between observed room temperature ferromagnetism and gas sensing studies and primary role of defects in gas sensing mechanism over microstructure is realized . The Chapter 6 presents the deposition of SnO2 thin films by UNSPACM method on glass substrates for gas sensing application. The readiness of UNSPACM in making sensor materials with unform dopant distribution is demonstrated in order to improve the sensor performance in terms of response and selectivity. The chemical composition, film morphology and gas sensing studies are reported. The SnO2 is doped with Cr and Pt to enhance the sensing properties of the material. The doped Oxide films are found to show enhancement in sensitivity and improve the selectivity of the films towards specific gases like NO2 and CO. Further in Chapter 7 an effort has been made to overcome the problem of high operating temperature of metal oxide gas sensors through use of Reduced Graphene Oxide (RGO) and metal oxide nanocomposite films. Although RGO shows room temperature response towards many toxic and hazardous gases but it exhibits poor sensor signal recovery. This has been successfully solved by making nanohybrids of RGO and SnO2. It not only improves the sensor signal kinetics but it enhances the sensitivity also. Thus this chapter endeavors towards low power consumption gas sensing devices. The key findings and future aspects are summarized in the Chapter 8.

Li-ion thin film battery technology has attracted much attention in recent years due to its highest need in portable electronic devices. Development of new materials for lithium ion battery (LIB) is very crucial for enhancement of the performance. LIB can supply higher energy density because Lithium is the most electropositive (-3.04V vs. standard hydrogen electrode) and lightest metal (M=6.94 g/mole). LIBs show many advantages over other kind of batteries such as, high energy density, high power density, long cycle life, no memory effect etc. The major work presented in this thesis is on the development of nanostructured materials for anode of Li-ion battery. It involves the synthesis and analysis of grapheme nanosheet (GNS) and its performance as anode material in Li ion battery. We studied the synthesis of GNS over different substrates and performed the anode studies. The morphology of GNS has great impact on Li storage capacity. Tin and Tin oxide nanostructures have been embedded in the GNS matrix and their electrochemical performance has been studied. Chapter 1 gives the brief introduction about the Li ion batteries (LIBs), working and background. Also the relative advantages and characterization of different electrode materials used in LIBs are discussed. Chapter 2 discusses various experimental techniques that are used to synthesize the electrode materials and characterize them. Chapter3 presents the detailed synthesis of graphene nanosheet (GNS) through electron cyclotron resonance (ECR) microwave plasma enhanced chemical vapor deposition (ECR PECVD) method. Various substrates such as metallic (copper, Ni and Pt coated copper) and insulating (Si, amorphous SiC and Quartz) were used for deposition of GNS. Morphology, structure and chemical bonding were analyzed using SEM, TEM, Raman, XRD and XPS techniques. GNS is a unique allotrope of carbon, which forms highly porous and vertically aligned graphene sheets, which consist of many layers of graphene. The morphology of GNS varies with substrate. Chapter 4 deals with the electrochemical studies of GNS films. The anode studies of GNS over various substrates for Li thin film batteries provides better discharge capacity. Conventional Li-ion batteries that rely on a graphite anode have a limitation in the capacity (372 mAh/g). We could show that the morphology of GNS has great effect in the electrochemical performance and exceeds the capacity limitation of graphite. Among the electrodes PtGNS shown as high discharge capacity of ~730 mAh/g compare to CuGNS (590 mAh/g) and NiGNS (508 mAh/g) for the first cycle at a current density of 23 µA/cm2. Electrochemical impedance spectroscopy provides the various cell parameters of the electrodes. Chapter 5 gives the anodic studies of Tin (Sn) nanoparticles decorated over GNS matrix. Sn nanoparticles of 20 to 100nm in size uniformly distributed over the GNS matrix provides a discharge capacity of ~1500 mAh/g mAh/g for as deposited and ~950 mAh/g for annealed Sn@GNS composites, respectively. The cyclic voltammogram (CV) also shows the lithiation and delithiation process on GNS and Sn particles. Chapter 6 discusses the synthesis of Tinoxide@GNS composite and the details of characterization of the electrode. SnO and SnO2 phases of Tin oxide nanostructures differing in morphologies were embedded in the GNS matrix. The anode studies of the electrode shows a discharge capacity of ~1400 mAh/g for SnO phase (platelet morphology) and ~950 mAh/g for SnO2 phase (nanoparticle morphology). The SnO phase also exhibits a good coulumbic efficiency of ~95%. Chapter 7 describes the use of SnO2 nanowire attached to the side walls of the GNS matrix. A discharge capacity of ~1340 mAh/g was obtained. The one dimensional wire attached to the side walls of GNS film and increases the surface area of active material for Li diffusion. Discharge capacity obtained was about 1335 mAhg-1 and the columbic efficiency of ~86% after the 50th cycle. The research work carried out as part of this thesis, and the results have summarized in chapter 8.

Surface texturization of Transparent Conductive Oxides (TCOs) is a well-known strategy to enhance the light-trapping capabilities of thin-film solar cells and thus, to increase their power conversion efficiency. Herein, the surface modification of fluorine-doped tin oxide (FTO) using picosecond infrared direct laser interference patterning (DLIP) is presented. The surface characterization exhibits periodic microchannels, which act as diffraction gratings yielding an increase in the average diffuse transmittance up to 870% in the spectral range of 400–1000 nm. Despite the one dimensionality of the microstructures, the films did not acquire a significant anisotropic electrical behavior, but a partial deterioration of their conductivity is observed as a result of the removal of conductive material. This work proposes the feasibility of trading off a portion of the electrical conductivity to obtain a substantial improvement in the optical performance.

Transparent conducting oxides (TCOs) combine optical transparency in the visible region with a high electrical conductivity. In2O3 doped with Sn (widely, but somewhat misleadingly, known as indium tin oxide or ITO) is at present the most important TCO, with applications in liquid crystal displays, touch screen displays, organic photovoltaics and other optoelectronic devices. Surprisingly, many of its fundamental properties have been the subject of controversy or have until recently remained unknown, including even the nature and magnitude of the bandgap. The technological importance of the material and the renewed interest in its basic physics prompted the research described in this thesis. This thesis aims (i) to establish conditions for the growth of high-quality In2O3 nanostructures and thin films by oxygen plasma assisted molecular beam epitaxy and (ii) to conduct comprehensive investigations on both the surface physics of this material and its structural and electronic properties. It was demonstrated that highly ordered In2O3 nanoislands, nanorods and thin films can be grown epitaxially on (100), (110) and (111) oriented Y-stabilized ZrO2 substrates respectively. The mismatch with this substrate is -1.7%, with the epilayer under tensile strain. On the basis of ab initio density functional theory calculations, it was concluded that the striking influence of substrate orientation on the distinctive growth modes was linked to the fact that the surface energy for the (111) surface is much lower than for either polar (100) or non-polar (110) surfaces. The growth of In2O3(111) thin films was further explored on Y-ZrO2(111) substrates by optimizing the growth temperature and film thickness. Very thin In2O3 epilayers (35 nm) grew pseudomorphically under high tensile strain, caused by the 1.7% lattice mismatch with the substrate. The strain was gradually relaxed with increasing film thickness. High-quality films with a low carrier concentration (5.0  1017 cm-3) and high mobility (73 cm2V-1s-1) were obtained in the thickest films (420 nm) after strain relaxation. The bandgap of the thinnest In2O3 films was around 0.1 eV smaller than that of the bulk material, due to reduction of bonding-antibonding interactions associated with lattice expansion. The high-quality surfaces of the (111) films allowed us to investigate various aspects of the surface structural and electronic properties. The atomic structure of In2O3 (111) surface was determined using a combination of scanning tunnelling microscopy, analysis of intensity/voltage curves in low energy electron diffraction and first-principles ab initio calculations. The (111) termination has an essentially bulk terminated (1 × 1) surface structure, with minor relaxations normal to the surface. Good agreement was found between the experimental surface structure and that derived from ab initio density functional theory calculations. This work emphasises the benefits of a multi-technique approach to determination of surface structure. The electronic properties of In2O3(111) surfaces were probed by synchrotron-based photoemission spectroscopy using photons with energies ranging from the ultraviolet (6 eV) to the hard X-ray regime (6000 eV) to excite the spectra. It has been shown that In2O3 is a highly covalent material, with significant hybridization between O and In orbitals in both the valence and the conduction bands. A pronounced electron accumulation layer presents itself at the surfaces of undoped In2O3 films with very low carrier concentrations, which results from the fact the charge neutrality level of In2O3 lies well above the conduction band minimum. The pronounced electron accumulation associated with a downward band bending in the near surface region creates a confining potential well, which causes the electrons in the conduction band become quantized into two subband states, as observed by angle resolved photoemission spectra (ARPES) Fermi surface mapping. The accumulation of high density of electrons near to the surface region was found to shrink the surface band gap through many body interactions. Finally epitaxial growth of In2O3 thin films on α-Al2O3(0001) substrates was investigated. Both the stable body centred cubic phase and the metastable hexagonal corundum In2O3 phase can be stabilized as epitaxial thin films, despite large mismatches with the substrate. The growth mode involves matching small but different integral multiples of lattice planes of the In2O3 and the substrate in a domain matching epitaxial growth mode.