The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and shows excellent dielectric properties. Hafsox with the addition of lanthanum, to improve film dehydration, has successfully been demonstrated as a gate dielectric. Metal-insulator-metal (MIM) capacitance testing of hafsox with lanthanum, has resulted in a low loss tangent of 0.30% at 1 kHz, a relative permittivity of 11.47 at 1 kHz, a breakdown voltage of 6.30 MV cm⁻¹, and a leakage current density of 4.38 nA cm⁻² at 1 MV cm⁻¹. Progress has also been achieved in the development of solution-based semiconductor materials. To date the most successful of these materials is zinc indium oxide (ZIO), which has been demonstrated as a thin-film-transistor (TFT) channel material. This ZIO TFT is a depletion-mode device with a turn-on-voltage of V[subscript on]~ -19 V, a threshold voltage of V[subscript T] ~-16 V, and a drain current on-to-off ratio of ~10³. Mobilities extracted from this ZIO TFT include an incremental mobility of μ[subscript inc] ~0.05 cm² V⁻' sec⁻', an effective mobility of μ[subscript eff] ~0.02 cm² V⁻' sec⁻', and an average mobility of μ[subscript avg] ~0.02 cm² V⁻' sec⁻' at V[subscript GS]=20 V. The development of metal-semiconductor field-effect transistors (MESFET) TFTs is also investigated as a means of eliminating the need for a dielectric material in order to reduce the complexity of fabricating circuits. MESFETs are attempted with semiconductor materials such as CdS that is deposited by chemical bath deposition (CBD) and SnO₂ that is deposited by RF magnetron sputtering, but with little success. The most successful MESFET-like device fabricated, employing SnO₂ as the channel material, is a strong depletion-mode device with a small amount of gate voltage modulation. / Graduation date: 2006

The subthreshold region of operation has simple physics which allows for a balanced-force approach to behavioral modeling that has shown to be robust to temperature, and a model that encapsulates MOSFET behavior across all operational regions has been developed. The subthreshold region of operation also allows for injection of charge onto floating nodes that allows for persistent storage that can be used in a variety of applications. The combination of charge storage and device modeling has allowed for the development of programmable circuits for digital applications.

Thèse doctorat : Génie Electrique : Villeurbanne, INSA : 2005. / Titre provenant de l'écran-titre. Bibliogr. p. 207-212.

No description available.

Thesis (Ph. D.)--University of Hawaii at Manoa, 1994. / Includes bibliographical references (leaves 593-597). / Microfiche. / 2 v. (xliii, 597 leaves), bound ill. 29 cm

Thesis (M.S. in Electrical Engineering)--Vanderbilt University, Dec. 2007. / Title from title screen. Includes bibliographical references.

Thesis--Auburn University, 2005. / Abstract. Vita. Includes bibliographic references.

Thesis (Ph.D.) -- Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.

Thesis (M. Eng.)--Carleton University, 2002. / Includes bibliographical references (p. 76-81). Also available in electronic format on the Internet.

Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Chair: John D. Cressler; Committee Member: Joy Laskar; Committee Member: Kevin Kornegay