Global ETD Search

171	EXTENSION OF THE THEORY OF UNIJUNCTION TRANSISTORS Linder, John Scott, 1935- January 1967 (has links) No description available. Unijunction transistors. Negative resistance devices.
172	THE EFFECTS OF COMPENSATION ON LOAD TRANSIENT RESPONSE IN SWITCHED MODE POWER CONVERTERS Garcia, Robert John January 1985 (has links) No description available. Electric current converters. Power transistors.
173	Effects of illumination on the properties of organic field-effect transistors Wasapinyokul, Kamol January 2011 (has links) No description available. 620 Organic field-effect transistors
174	The replacement of diffused resistors in integrated digital circuits by field effect current limiters Whalen, James W. January 1966 (has links) No description available. Field-effect transistors. Electric resistors.
175	Power control circuits utilizing transistors Fischer, Israel Lou, 1932- January 1961 (has links) No description available. Transistor circuits. Transistors. Electronic control.
176	Development of chemically sensitive field-effect transistor arrays and selective materials Polk, Brian Joseph 08 1900 (has links) No description available. Field-effect transistors Chemical detectors
177	Field effect transistors in differential amplifiers Gray, James Stephen 08 1900 (has links) No description available. Amplifiers (Electronics) Field-effect transistors
178	A theory for optically-gated gallium-arsenide MESFETS Darling, Robert Bruce 05 1900 (has links) No description available. Field-effect transistors Microwave devices
179	A design technique for mixed ECL and CMOS circuitry Massingham, John William January 1994 (has links) In this thesis, the principles of mixing ECL and CMOS technologies have been investigated with the intention of increasing the operating speed of synchronous systems. To achieve this, the design will be primarily CMOS based with the critical path implemented in ECL to reduce the delay and hence improve the execution time. Logic conversion circuitry between the two technologies has been designed, with the CMOS-ECL conversion circuit being a simple enhancement of the basic ECL current switch and ECL-CMOS translation being achieved with 0.5ns using a "double inverter circuit". To reduce the power dissipation of the ECL circuitry, a power control circuit has been incorporated which enables the ECL circuitry when the critical path is required and disables it, to save power, when the instructions to be evaluated are non critical. To further reduce the power consumption of the ECL circuitry and decrease the execution time, a BiCMOS active pull down circuit has been added. The active pull down circuit replaces the resistor in the traditional emitter follower configuration, reducing the power loss and matching the gate fall time to the rise time. A mixed ECL and CMOS technology ripple adder, utilising all of these features, has been designed and simulated using HSPIC. The inputs to be added are from CMOS registers and the output sum is returned to CMOS registers but within the circuit, the carry ripple is implemented in ECL. The performance is comparable with an ECL adder whilst using less than a third of the power and with larger, more complex systems, the mixed technology concept is estimated to actually be faster than ECL. 621.3192
180	Thin film transistors from II-IV semiconductors on polymer substrates MacNab, Finlay. January 2006 (has links) A chemical bath deposition technique has been used in the fabrication of thin film transistors (TFT), which have been deposited on a 200mum polymer substrate. This thesis documents the chemistry and microfabrication techniques used to create the TFTs. Because TFTs have not been fabricated on plastics in this manner before, insights gained from understanding the mechanical properties of the polymer, and how these interact with those of the inorganic components of the TFTs, were used to guide development of processes specifically suited to adapt the polymer to TFT fabrication. Thin film transistors. Electronic polymers.

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