abstract: Implantable medical device technology is commonly used by doctors for disease management, aiding to improve patient quality of life. However, it is possible for these devices to be exposed to ionizing radiation during various medical therapeutic and diagnostic activities while implanted. This commands that these devices remain fully operational during, and long after, radiation exposure. Many implantable medical devices employ standard commercial complementary metal-oxide-semiconductor (CMOS) processes for integrated circuit (IC) development, which have been shown to degrade with radiation exposure. This necessitates that device manufacturers study the effects of ionizing radiation on their products, and work to mitigate those effects to maintain a high standard of reliability. Mitigation can be completed through targeted radiation hardening by design (RHBD) techniques as not to infringe on the device operational specifications. This thesis details a complete radiation analysis methodology that can be implemented to examine the effects of ionizing radiation on an IC as part of RHBD efforts. The methodology is put into practice to determine the failure mechanism in a charge pump circuit, common in many of today's implantable pacemaker designs, as a case study. Charge pump irradiation data shows a reduction of circuit output voltage with applied dose. Through testing of individual test devices, the response is identified as parasitic inter-device leakage caused by trapped oxide charge buildup in the isolation oxides. A library of compact models is generated to represent isolation oxide parasitics based on test structure data along with 2-Dimensional structure simulation results. The original charge pump schematic is then back-annotated with transistors representative of the parasitic. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit, accounting for possible parasitic devices activated by radiation exposure. By selecting a compact model for the parasitics generated at a specific dose, the compete circuit response is then simulated at the defined dose. The reduction of circuit output voltage with dose is then re-created in a radiation-enabled simulation validating the analysis methodology. / Dissertation/Thesis / M.S. Electrical Engineering 2010

Consistent charge or defect control in oxide grown on silicon carbide (SiC) continues to be difficult to achieve and directly impacts the electrical performance of SiC-based metal oxide semiconductor (MOS) devices. This research applied non-contact Corona-Kelvin metrology to investigate the charge transport in oxides grown on n-type 4H-SiC epitaxial substrates. The cost and engineering science impact of this metrology are significant as device fabrication is avoided leading to quick determination of electrical characteristics from as-grown oxide films. Non-contact current-voltage (I-V) measurements of oxide on SiC were first demonstrated within this work and revealed that Fowler-Nordheim (F-N) current emission was the dominant conduction mechanism at high electric fields. Oxides on SiC were grown at atmospheric pressure (thermal oxides) or at a reduced pressure (afterglow oxides) ambient and examined using non-contact charge-voltage (Q-V), capacitance-voltage (C-V), equivalent oxide thickness (EOT), and I-V methods. The F-N conduction model was modified to address charge trapping and effective barrier effects obtained from experimental oxide films. Trap densities determined with this metrology were used to show that the F-N model including their density and position was adequate for thermal oxides on SiC but not for afterglow films. Data from the latter films required further modification of the theory to include a chemical effect of the oxide growth process on the effective conduction band offset or barrier. This work showed that afterglow chemistry was able to vary the effective conduction band offset from 2.9 eV, typical of thermal oxidation of SiC, up to 3.2 eV. Stress induced leakage current (SILC), an excess above the F-N base current resulting from prolonged current through the dielectric films, was also investigated. Multiple point SILC testing was used to identify statistical effects of process variations and defects in as-grown oxide films on SiC. These results open the possibility to improve oxide manufacture on SiC using methods common in the silicon IC industry. This work demonstrated the first non-contact F-N current determination in oxides on SiC and showed both charge trapping and chemical dependencies of as-grown films. Future studies may extend the findings of this work to further improve this important dielectric-semiconductor system.

Polymer and organic electronic memory devices offer the potential for cheap, simple memories that could compete across the whole spectrum of digital memories, from low cost, low performance applications, up to universal memories capable of replacing all current market leading technologies, such as hard disc drives, random access memories and Flash memories. Polymer memory devices (PMDs) are simple, two terminal metal-insulator-metal (MIM) bistable devices that can exist in two distinct conductivity states, with each state being induced by applying different voltages across the device terminals. Currently there are many unknowns and much ambiguity concerning the working mechanisms behind many of these PMDs, which is impeding their development. This research explores some of these many unanswered questions and presents new experimental data concerning their operation. One prevalent theory for the conductivity change is based on charging and charge trapping of nanoparticles and other species contained in the PMD. The work in this research experimentally shows that gold nanoparticle charging is possible in these devices and in certain cases offers an explanation of the working mechanism. However, experimental evidence presented in this research, shows that in many reported devices the switching mechanism is more likely to be related to electrode effects, or a breakdown mechanism in the polymer layer. Gold nanoparticle charging via electrostatic force microscopy (EFM) was demonstrated, using a novel device structure involving depositing gold nanoparticles between lateral electrodes. This allowed the gold nanoparticles themselves to be imaged, rather than the nanoparticle loaded insulating films, which have previously been investigated. This method offers the advantages of being able to see the charging effects of nanoparticles without any influence from the insulating matrix and also allows charging voltages to be applied via the electrodes, permitting EFM images to capture the charging information in near real-time. Device characteristics of gold nanoparticle based PMDs are presented, and assessed for use under different scenarios. Configurations of memory devices based on metal-insulator-semiconductor (MIS) structures have also been demonstrated. Simple interface circuitry is presented which is capable of performing read, write and erase functions to multiple memory cells on a substrate. Electrical properties of polystyrene thin films in the nanometre thickness range are reported for the first time, with insulator trapped charges found to be present in comparable levels to those in silicon dioxide insulating films. The dielectric breakdown strength of the films was found to be significantly higher than bulk material testing would suggest, with a maximum dielectric strength of 4.7 MV•cm-1 found, compared with the manufacturers bulk value of 0.2 – 0.8 MV•cm-1. Conduction mechanisms in polystyrene were investigated with the dominant conduction mechanism found to be Schottky emission.

The work deals with a comparison of existing and perspective types of passivation and anti-reflective coating for silicon solar cells. The theoretical part describes the appropriate methodology for the characterization of these layers and focuses on the passivation layers based on Al2O3. The practical part describes design and verification operations of the equipment for measuring of the amount of fixed charge in the passivation layers using corona discharge. It also describes the implementation of equipment and the results of indicative tests for positive and negative polarity of high voltage. The final part discusses the possibility of equipment improving.

Accurate estimation of environmental dose rate is essential for high-resolution trapped-charge dating. Beta and gamma emissions from simulated sediments containing radioactive uranium, thorium and potassium are modelled in contexts that are spatially heterogeneous. Dose rate was modelled using Monte Carlo radiation transport codes MCNP and PENELOPE. A number of key issues that affect dose rate evaluation are examined and updated corrections are calculated. Granular structures used for geometrical input into the models were simulated using randomly packed ellipsoids. The pair correlation function and chord length distributions were derived. The effects of water content on dose rate were modelled and compared with cavity theory. Apart from activity dilution, the variation of grain size or water content was shown to be significant for gamma radiations due to the transition from charged particle equilibrium. The standard correction for beta dose rate due to grain size was found to be satisfactory although sensitivity to grain shape and material should be taken into account. Dose rate modeling was applied to three dating studies of early human fossils: Skhul V, Israel skull; Hofmeyr, South Africa skull and the Forbes’ Quarry, Gibraltar skull. The spatial modelling was implemented using computerised tomographic (CT) images and dose rate found to be modified significantly by the presence of the skull in the sediment. Time evolution of the dose rate was examined for the latter two skulls and dates of 36±3ka (Hofmeyr) and 55-95ka (Forbes’ Quarry) were calculated.

No description available.

No description available.