Nanoelectromechanical systems (NEMS) have drawn considerable attention towards several sensing applications such as force, spin, charge and mass. These devices due to their smaller size, operate at very high frequencies (MHz - GHz) and have very high quality factors (102 -105). However, the early onset of nonlinearity limits the linear dynamic range of these devices. In this work we investigate the nonlinearities and their effect on the performance of graphene based NEMS. Electromechanical devices based on 2D materials are extremely sensitive to strain. We studied the effect of strain on the performance of single layer Graphene NEMS and show how the strain in Graphene NEMS can be tuned to increase the range of linear operation. Electromechanical properties of the doubly clamped graphene resonators deviates from the flat rectangular plate as the former possesses geometrical imperfections which are sometimes orders of magnitude larger than the thickness of the resonator. Due to these imperfections we report an initial softening behavior, turning to strong hardening nonlinearity for larger vibration amplitude in the back-bone curve. We have also studied the frequency stability of graphene resonators. Frequency stability analysis indicates departure from the nominal frequency of the resonator with time. We have used Allan Variance as a tool to characterize the frequency stability of the device. Frequency stability of graphene resonator is studied in an open loop configuration as a function of temperature and bias voltage. The thesis concludes with a remark on the future work that can be carried out based on the present studies.

Tato diplomová práce se zabývá výrobou ultratenkých keramických dutých vláken pomocí metody povlakování namáčením. Příprava keramických dutých vláken je v současnosti limitována rozměrem vnějšího a vnitřního průměru. Aplikace metody povlakování namáčením pro přípravu ultratenkých dutých je nový a technologicky náročný proces vyžadující volbu vhodné šablony a zároveň zvládnutí kontroly parametrů povlakování. Základními zvolenými materiály s vysokým aplikačním potenciálem jsou hydroxyapatit a oxid titaničitý. Samonosná dutá vlákna s tloušťkou stěny pod 1 m byla úspěšně připravena z obou materiálů. Dále byl také popsán proces povlakování namáčením obětovaných šablon. Tato metoda je unikátní, protože umožňuje produkci ultratenkých keramických dutých vláken s vnitřním průměrem pod 100 m a tloušťkou stěny pod 1 m.

This diploma thesis deals with preparation of graphene samples for depositions of ultrathin layers of gallium and gallium nitride. Graphene substrates were prepared by chemical vapour deposition in home-build high temperature reactor. After graphene transfer to silicon wafers, a series of chemical and thermal treatments were performed. Obtained samples were suitable for the study of growth of ultrathin layers of Ga and GaN. The growth of Ga and GaN was realized in ultra high vacuum conditions. Molecular beam epitaxy technique was used for gallium depositions together with ion source for nitridation. Obtained ultrathin layers were studied with X-ray photoelectron spectroscopy, atomic force microscopy and with scanning electron microscopy.

This master's thesis deals with preparation and analysis of ultrathin films of aluminum and aluminum nitride. Films were prepared by effusion cells designed in previous bachelor's thesis. Cell construction and testing is included in this thesis. Behavior of aluminum on silicon dioxide, silicon and graphene was studied. Preparation of aluminum nitride by effusion cell and nitrogen ion source is described.

Tin dioxide (SnO2) is considered one of the most promising anode materials for Lithium ion batteries (LIBs), due to its large theoretical capacity and natural abundance. However, its low electronic/ionic conductivities, large volume change during lithiation/delithiation and agglomeration prevent it from further commercial applications. In this thesis, we investigate modified SnO2 as a high energy density anode material for LIBs. Specifically two approaches are presented to improve battery performances. Firstly, SnO2 electrochemical performances were improved by surface modification using Atomic Layer Deposition (ALD). Ultrathin Al2O3 or HfO2 were coated on SnO2 electrodes. It was found that electrochemical performances had been enhanced after ALD deposition. In a second approach, we implemented a layer-by-layer (LBL) assembled graphene/carbon-coated hollow SnO2 spheres as anode material for LIBs. Our results indicated that the LBL assembled electrodes had high reversible lithium storage capacities even at high current densities. These superior electrochemical performances are attributed to the enhanced electronic conductivity and effective lithium diffusion, because of the interconnected graphene/carbon networks among nanoparticles of the hollow SnO2 spheres.

Nanometer-scale-thick films of metals and semiconductor heterostructures are used increasingly in modern technologies, from microelectronics to various areas of nanofabrication. Processing of such ultrathin-film materials generates structural defects, including voids and cracks, and may induce structural transformations. Furthermore, the mechanical behavior of these small-volume structures is very different from that of bulk materials. Improvement of the reliability, functionality, and performance of nano-scale devices requires a fundamental understanding of the atomistic mechanisms that govern the thin-film response to mechanical loading in order to establish links between the films' structural evolution and their mechanical behavior. Toward this end, a significant part of this study is focused on the analysis of atomic-scale mechanisms of plastic deformation in freestanding, ultrathin films of face-centered cubic (fcc) copper (Cu) that are subjected to biaxial tensile strain. The analysis is based on large-scale molecular-dynamics simulations. Elementary mechanisms of dislocation nucleation are studied and several problems involving the structural evolution of the thin films due to the glide of and interactions between dislocations are addressed. These problems include void nucleation, martensitic transformation, and the role of stacking faults in facilitating dislocation depletion in ultrathin films and other small-volume structures of fcc metals. Void nucleation is analyzed as a mechanism of strain relaxation in Cu thin films. The glide of multiple dislocations causes shearing of atomic planes and leads to formation of surface pits, while vacancies are generated due to the glide motion of jogged dislocations. Coalescence of vacancy clusters with surface pits leads to formation of voids. In addition, the phase transformation of fcc Cu films to hexagonal-close packed (hcp) ones is studied. The resulting martensite phase nucleates at the film's free surface and grows into the bulk of the film due to dislocation glide. The role of surface orientation in the strain relaxation of these strained thin films under biaxial tension is discussed and the stability of the fcc crystalline phase is analyzed. Finally, the mechanical response during dynamic tensile straining of pre-treated fcc metallic thin films with varying propensities for formation of stacking faults is analyzed. Interactions between dislocations and stacking faults play a significant role in the cross-slip and eventual annihilation of dislocations in films of fcc metals with low-to-medium values of the stable-to-unstable stacking-fault energy ratio, γs/γu. Stacking-fault-mediated mechanisms of dislocation depletion in these ultrathin fcc metallic films are identified and analyzed. Additionally, a theoretical analysis for the kinetics of strain relaxation in Si 1-x Ge x (0 ≤ x ≤ 1) thin films grown epitaxially on Si(001) substrates is conducted. The analysis is based on a properly parameterized dislocation mean-field theoretical model that describes plastic-deformation dynamics due to threading dislocation propagation; the analysis addresses strain relaxation kinetics during both epitaxial growth and thermal annealing, including post-implantation annealing. The theoretical predictions for strain relaxation as a function of film thickness in Si 0.80 Ge 0.20 /Si(001) samples annealed after growth, either unimplanted or after He + implantation, are in excellent agreement with reported experimental measurements.

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No description available.

The magnetic susceptibility of 3-4ML ultrathin Fe/W(001) films was measured in situ under ultrahigh vacuum using the surface magneto-optic Kerr effect (SMOKE). Susceptibility measurements indicate that Fe/W(001) is a 2DXY system, and therefore undergoes a finite-size Kosterlitz-Thouless (KT) transition at the critical temperature T_KT. The films were grown using molecular beam epitaxy (MBE) and were characterized using Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED). Three distinct categories of susceptibility signals were observed, and are referred to as Type I, II, and III. The primary difference between these signals is the size of the imaginary susceptibility, which likely corresponds to dissipative effects such as domain wall motion. The critical behaviour of the susceptibility in the paramagnetic region is described in the theory by χ(T) ~exp⁡〖〖(B/(T/T_KT-1) 〗^a)〗. A least-squares fit to this paramagnetic region from many independently grown films gives values of a=0.50±0.03 and B=3.48±0.16, which are in quantitative agreement with the KT theory. In comparison to 2nd order phase transitions, a power law fit to the paramagnetic region of the susceptibility yields an effective critical exponent of γ_eff≈3.7±0.7, which does not correspond to any known universality class. / Thesis / Master of Science (MSc) / The magnetic properties of atomically thin iron films, referred to as Fe/W(001), were investigated using the highly sensitive phenomenon known as the surface magneto-optic Kerr effect (SMOKE). Fe/W(001) films were grown using the well-developed technique known as molecular beam epitaxy (MBE), which involved a slow and controlled thermal evaporation of an iron source onto a tungsten substrate. Film thickness and uniformity were verified using Auger electron spectroscopy, and film structure was determined using low energy electron diffraction. Film growth and all subsequent measurements were performed in situ under ultrahigh vacuum (10-10 mbar) to limit surface contamination. Using SMOKE, the magnetic susceptibility of the Fe/W(001) films was measured as a function of temperature to look for evidence of a unique phase transition known as the Kosterlitz-Thouless (KT) transition. Fitting experimental susceptibility data to the theoretical model for the KT transition presented persuasive evidence that Fe/W(001) films undergo a KT transition.

This thesis is concerned with the study of morphology and properties of sub-micron thin Nafion® films. The motivation of the work arises from the need to characterize the 4 -10 nm thin ionomer films in the catalyst layer of polymer electrolyte fuel cell (PEFC). A protocol for the fabrication of self-assembled ultra-thin Nafion® films on planar substrates was successfully developed. Films of thickness ranging 4 nm-300 nm, determined by three different techniques - variable angle spectroscopy ellipsometry (VASE), atomic force microscope (AFM) and x-ray photo-electron spectroscopy (XPS), could be reproducibly generated on SiO2/Si wafer. The 4 nm thin film is one of the thinnest, continuous film of Nafion® ever reported. This is the first time that the structure/properties of such thin Nafion® film have been investigated. An interesting finding is the thickness-dependent structure and property of these films. Films with thickness <55 nm exhibited hydrophilic-free surface but thicker films (>55 nm) had hydrophobic surface. Similarly, sub-55 nm films had a lower and thickness-independent protonic conductivity compared to thicker films that exhibited thickness-dependent conductivity. Anomalously high water uptake (by quartz crystal microbalance) and swelling (by ellipsometry) of sub-55nm films indicate that low conductivity is not due to low water content However, differences in surface morphology were observed by the AFM phase contrast analysis. The lack of ionic domain was also observed in the thinner films (4-30 nm) from the grazing incidence small x-ray scattering (GISAXS) experiments. Thermal annealing over a range of temperature (110-160 oC) revealed a dramatic switching of the film surface from hydrophilic to hydrophobic was observed for sub-55 nm films with lower thickness film requiring higher annealing temperature. Bulk proton conductivity was significantly reduced after annealing for all films. An interesting finding was the regeneration of conductivity after to prolonged liquid water exposure and a corresponding switching back of the surface to hydrophilic. The thickness-dependent structure/property of ultra-thin Nafion® films is attributed to substrate induced confinement effect. Self-assembly of Nafion® on various substrates (SiO2, carbon, Pt and Au) was studied. The ionomer/substrate interaction and resulting film morphology followed a trend with respect to substrate surface energies and Nafion® dispersion compositions. / Thesis (Ph.D, Chemical Engineering) -- Queen's University, 2013-09-29 12:36:19.05