In conventional optics, curved lenses focus light rays to a focal point after light passes through them. These lenses have been designed to shape the wavefront of the incident beam as it emerges from the curved surface of the lens. Conventional lenses suffer from many limitations, such as limited optical quality for imaging and integration difficulties with other optical components due to their large size, huge thickness, as well as being difficult to manufacture. Using subwavelength structure, it is possible to fabricate flat, thin lenses (metalenses) with new optical properties not found in nature, in which many fundamental properties of light (like polarization, focal point, and phase) can be controlled with high accuracy. This results in high resolution and high quality of optical imaging. This thesis demonstrates a new design of reflective metalens, in which the metalens structure is integrated with another optical component: Distributed Bragg Reflector (DBR). The metalens planer is a two-dimensional ultrathin planer arranged as an array with subwavelength separation distance. In recent works, a metalens was integrated with (metal/dielectric)-mirrors to form reflective metalenses. Simulation results show that, high-focusing efficiency is obtained for the lens (> 60%) with the ability to reflect96% of total incident optical power. In comparison, the new metalens-DBR design - processes maintain the same high-focusing efficiency, but with a reflectance of 99.99%, which makes it promising for optoelectronic integration and perfectly suitable for integration with Vertical Cavity Surface Emitting Lasers (VCSEL) technology. This study of the optical properties: focal length; optical aberration; insensitivity to light polarization; and focusing efficiency of demonstrated metalens was done mainly by Finite Difference Time Domaine (FDTD) by using Lumerical FDTD solution.

This project successfully designed, fabricated and characterized two highly reflective distributed Bragg reflectors for use with long wavelength vertical cavity surface emitting lasers. The first reflector consisted of 20 pairs of alternating lnP/Ino.64Gao.36Aso.777Po.223 layers grown on an InP substrate with a theoretically predicted normal incident reflectivity of 96.6% at a center wavelength of 1550nm. The second DBR had 20 pairs of alternating GaAs/Ino.484Gao.5i6P layers grown on a GaAs substrate with a theoretically predicted reflectivity of 94.9% at a center wavelength of 1550nm for normal incident light. Experimental results obtained using a specially designed reflectivity measurement setup confirmed reflectivity models and predictions at both normal and variable incident light angles. However, these measurements revealed a discrepancy between theoretical and experimental layer thickness values for both DBR structures. Applying perturbations to the theoretical models, the actual layer thicknesses ofthe DBRs were determined. X-ray analysis was employed to examine the periodicity of the super-lattices along with the accuracy of lattice matching to the substrate. Transmission electron microscopy revealed that no detectable drift in layer thickness was apparent during growth of the DBR structures. Photoluminescence was used to investigate any compositional variations ofthe quaternary layers in the first DBR stack. / Thesis / Master of Applied Science (MASc)

A dual-wavelength mode-locked semiconductor vertical-external-cavity-surface-emitting laser is demonstrated. A semiconductor saturable absorber mirror allows for simultaneous mode locking of pulses centered at two center wavelengths with variable frequency spacing. The difference-frequency control is achieved with an intracavity etalon. Changing the finesse of the etalon enables the adjustment of the pulse duration between 6 and 35 ps. The emitted two-color pulses are modulated by a beat frequency in the terahertz range. Self-starting mode-locking with 0.8-W average output power is demonstrated.

The objective of this work is to develop a near-infrared laser device capable of emitting orbital angular momentum (OAM) light. The prototyped device must be suitable for compact, energy-saving optical communication applications. Integrated OAM lasers will revolutionize high-capacity data transmission over any telecommuni- cation network environment, as OAM light can be guided and transmitted through kilometers of optical fibers and propagated in free space and underwater. Several methods for generating OAM light employing various complex monolithic and hybrid integration methods have been demonstrated. In this work, microscale integrated spiral phase plates (SPPs) are chosen to convert the laser beam output into an OAM mode. The concept and design fundamentals of SPPs are discussed, followed by the SPP fabrication process and their implementation in a high-speed communication setup and then integration with a semiconductor laser. SPPs are fabricated by a novel direct laser writing that provides the possibility to rapidly prototype 3D photonic structures via a two-photon polymerization pro- cess. After fabrication, SPPs are used in a fine-tuned free-space optical experimental setup that requires high-precision intercomponent alignment to test the high-speed OAM communication system and analyze the quality of OAM modes, resulting in high-purity OAM signals at data rates up to 1.8 Gbit/s – limited by the avalanche photodetector (APD) frequency response. The fabricated 20-μm-diameter SPPs were the smallest reported in the literature to date for optical characterization. A proof-of-concept monolithic light-emitting array, as a highly integrated OAM laser source, is further proposed for telecommunications and other applications. SPP-integrated 940-nm vertical-cavity surface-emitting laser (VCSEL) array chips that are relatively low-cost, have a small footprint, and are manufacturable in high volumes are developed. SPPs with topological charge modulus values from 1 to 3 are fabricated on the VCSEL arrays, demonstrating OAM modal purities up to ∼65%. The experimentally evaluated data rates in the OAM setup showed consistently sta- ble links up to 2.0 Gbit/s with a bit error ratio of ∼ 1.6 × 10−8 (APD-limited). The challenges of SPP-laser integration are summarized, with the conclusion that the widespread adoption of OAM is limited by the availability of practical integrated solutions for OAM generation and detection.

Self-heating leads to temperature rise of laser diode and limits the output power, efficiency and modulation bandwidth due to increased loss and decreased differential gain. The main heat sources in laser diode during continuous wave operation are Joule heating and free carrier absorption loss. To control device self-heating, the epi structure needs to be designed with low electrical resistance and low absorption loss, while the heat flux must spread out of the device efficiently. This dissertation presents the control of self-heating of both edge emitting laser diodes and vertical cavity surface emitting lasers (VCSELs). For the 980nm high power edge emitting laser, asymmetric waveguide is used for low free carrier absorption loss. The waveguide and cladding materials are optimized for high injection efficiency. BeO heatsink is applied to spread the heat efficiently. Injection efficiency of 71% and internal loss of 0.3 cm-1 have been achieved. A total output power of 9.3 W is measured from 0.5cm long device at 14.5A injection current. To further reduce the internal loss, the development of 980nm quantum dot active region is studied. Threshold current density as low as 59A/cm2 is reached. For the VCSELs, oxide-free structure is used to solve the self-heating problem of oxide VCSELs. Removing the oxide layer and using AlAs in the DBRs leads to record low thermal resistance. Optimization of the DBRs leads to low resistance and low free carrier absorption. Power conversion efficiency higher than 50% is achieved. To further reduce device voltage and heat generation, the development of intracavity contacts devices is introduced.

No description available.

This project successfully designed, fabricated and characterized two highly reflective distributed Bragg reflectors for use with long wavelength vertical cavity surface emitting lasers. The first reflector consisted of 20 pairs of alternating lnP/Ino.64Gao.36Aso.777Po.223 layers grown on an InP substrate with a theoretically predicted normal incident reflectivity of 96.6% at a center wavelength of 1550nm. The second DBR had 20 pairs of alternating GaAs/Ino.484Gao.5i6P layers grown on a GaAs substrate with a theoretically predicted reflectivity of 94.9% at a center wavelength of 1550nm for normal incident light. Experimental results obtained using a specially designed reflectivity measurement setup confirmed reflectivity models and predictions at both normal and variable incident light angles. However, these measurements revealed a discrepancy between theoretical and experimental layer thickness values for both DBR structures. Applying perturbations to the theoretical models, the actual layer thicknesses of the DBRs were determined. X-ray analysis was employed to examine the periodicity of the super-lattices along with the accuracy of lattice matching to the substrate. Transmission electron microscopy revealed that no detectable drift in layer thickness was apparent during growth of the DBR structures. Photoluminescence was used to investigate any compositional variations of the quaternary layers in the first DBR stack. / Thesis / Master of Applied Science (MASc)

Frequency domain functional near infrared spectroscopy (FD-fNIRS) is a tissue optical measurement technique used to measure absolute haemoglobin concentrations in brain tissue. This work is intended to be the first step in the development of a wearable, low-cost FD-fNIRS device for neurofeedback applications. The system requirements were generated from a review of relevant literature. A simplified system architecturewas developed based on the various instrumentation methodologies proposed by various authors. The functional blocks of this system were prototyped and their performance was evaluated. The developed vertical-cavity surface-emitting laser (VCSEL) current source was found to have a span of 10uA which meets the design specifications. Challenges exist in optimally biasing silicon photomultiplier (SiPM), which is susceptible to optical and electronic noise sources.

Ce travail de thèse porte sur l'étude et le développement de composants à cavité verticale dans le contexte des réseaux courtes et moyennes distances multiplexés en longueur d'onde autour de 1,55 μm. Pour fabriquer de telles structures, nous avons tout d'abord développé des miroirs de Bragg diélectriques constitués de silicium amorphe et de nitrure de silicium. La différence d'indice (1,9) élevée entre ces matériaux a permis d'atteindre les hautes réflectivités (R = 99,5%) nécessaires au bon fonctionnement des VCSELs. A la suite du développement de ces miroirs, nous avons réalisé un VCSEL, reporté sur substrat silicium par collage métallique AuIn2, comprenant deux miroirs diélectriques et une zone active à base de puits quantiques InGaAs/InGaAsP. Les caractérisations et les études par simulation du VCSEL ont engendré plusieurs optimisations, et ont permis d'obtenir une émission laser continue sous pompage optique jusqu'à une température de 35°C. Ces résultats encourageants ont validé notre processus de fabrication ainsi que la fiabilité et la bonne qualité des miroirs de Bragg diélectriques. Pour s'affranchir du caractère instable de la polarisation de ces VCSELs nous avons proposé l'utilisation de nanostructures quantiques InAs/InP anisotropes se présentant sous forme de fils. L'étude de ces structures et leur mise en cavité ont démontré leur intérêt pour introduire une anisotropie du gain permettant d'assurer une polarisation stable. Nous avons développé un VCSEL accordable suivant une nouvelle approche. Le principe repose sur l'insertion d'une couche de phase électro-optique à base de nano-PDLC (Polymer Dispersed Liquid Crystal) dans la cavité du VCSEL. Le nano-PDLC, permet d'obtenir une variation isotrope de l'indice de réfraction sous l'action d'une tension. La réalisation d'un prototype pompé optiquement a permis une première démonstration de faisabilité d'un VCSEL accordable par voie électro-optique. Une accordabilité de 10-nm autour de 1.55-μm a été mesurée pour une tension de 170V, et le temps moyen de commutation sur la gamme spectrale est de 30 μs.

L’objectif de cette thèse est de développer un nouveau matériau photopolymère pouvant être microstructuré dans la gamme de longueur d'onde du proche infrarouge (NIR). Le but final de ce travail est de proposer des solutions innovantes pour l'intégration de micro-optique sur les VCSELs (Vertical-Cavity Surface-Emitting Laser), sources lumineuses miniaturisées utilisées dans de nombreuses applications en optique, photonique, capteurs ou biologie. Le verrou technologique principal a consisté à développer et étudier le photopolymère adéquat pour la microfabrication déclenchée par le VCSEL. La difficulté principale tient à la longueur d'onde de photopolymérisation qui est fixé par le VCSEL et qui a obligé à développer un système moléculaire nouveau pour une polymérisation radicalaire à 780 et 850 nm. Une part importante du travail a consisté à étudier les mécanismes photophysiques et photochimiques des matériaux permettant de proposer des systèmes efficaces, sur le plan de la photophysique, de la photochimie de photopolymérisation et également une approche originale a été développée pour appréhender de façon quantitative les phénomènes de diffusion du colorant dans la matrice polymère. Sur la base des systèmes moléculaires proposés, la démonstration de l'intégration de microlentilles sur VCSEL par ce procédé innovant a pu être démontré. Les VCSELs lentillés ont été caractérisés et des propriétés très intéressantes pour la focalisation ont été démontrées. / The objective of this thesis is to develop a new photopolymer material that can be microstructured in the wavelength range of near-infrared (NIR). The ultimate aim of this work is to propose innovative solutions for micro-optical integration on VCSELs (Vertical-Cavity Surface-Emitting Laser). These miniaturized light sources are used in many applications in optics, photonics, sensors or biology. The main technological challenge was to develop and explore a new photopolymer compatible with a microfabrication initiated by the VCSEL. The main difficulty was to develop a new molecular system for radical polymerization at 780 and 850 nm, which is the wavelength emitted by the VCSEL. An important part of the work consisted to study the photophysical and photochemical mechanisms of this photopolymer in order to provide efficient systems in terms of photophysics, photochemistry of the photopolymerization. An original approach was developed to quantitatively apprehend the phenomena dye diffusion in the polymer matrix. Based on the proposed molecular systems, demonstrating the integration of microlenses on VCSELs by this innovative process could be shown. The lensed VCSELs have been characterized and very interesting properties for focusing have been demonstrated.