In a time of global environmental problems due to overuse of fossil fuels, and a subsequent depletion of the supplies, hydrogen is considered as one of the most important renewable future fuels for use in clean energy systems with zero greenhouse-gas emission. Hydrogen storage is the main issue that needs to be solved before the technology can be implemented into key areas such as transport. The high energy density, good stability and reversibility of metal hydrides make them appealing as hydrogen storage materials. In this thesis research on synthesis and hydrogen absorption properties for intermetallic compounds based on scandium and aluminium is reported. The compounds were synthesized by arc melting or induction melting and exposed to hydrogen in a high pressure furnace. Desorption investigations were performed by thermal desorption spectroscopy. The samples were analyzed by x-ray powder diffraction and electron microscopy. ScAlNi, crystallizing in the MgZn2-type structure (space group: P63/mmc; a = 5.1434(1) Å, c = 8.1820(2) Å), was found to absorb hydrogen by two different mechanisms at different temperature regions. At ~120 °C hydrogen was absorbed by solid solution formation with estimated compositions up to ScAlNiH0.5. At ~500 °C hydrogen was absorbed by disproportionation of ScAlNi into ScH2 and AlNi. The reaction was found to be fully reversible due to destabilization effects which lowered the decomposition temperature of ScH2 by ~460 °C.

Dokumentärfotografiet befinner sig i ständig utveckling. I takt med att människan blir mer rörlig ökar även dess kontakt med andra kulturer. Den här rapporten undersöker hur människor med olika kulturell bakgrund uppfattar kulturella konnotationer i dokumentärfotografier. Området studien avser att studera är delstaten New Mexico i USA. Rapporten inleder med att definiera den dokumentärfotografiska utveckling av landskapet som skett i delstaten. Den fortsätter sedan med att gå in på att definiera en ny typ av dokumentärfotografi som praktiseras av fotografen Patrick Nagatani. Han använder sig av en metod som Joan Fontcuberta definierar som X-ray realism. Studien har genomförts genom att producera tre olika fotografier med hjälp av metoden X-ray realism för att sedan implementera kulturella och ideologiska anknytningar i dem. Studien låter sedan responsgrupper i både Sverige och USA analysera och motivera hur de förhåller sig till de kulturella referenserna och för att klargöra om Nagatanis sätt att fotografera på fungerar globalt eller om betraktaren måste vara bosatt på platsen för att förstå fotografiernas innebörd.

<p><i>Lactococcus lactis,</i> prolidase (<i>Lla</i>prol) hydrolyzes Xaa-Pro dipeptides. Since Xaa-Pro is known as bitter peptides, <i>Lla</i>prol is potentially applicable to reduce bitterness of fermented foods. <i>Lla</i>prol shows allosteric behaviour and substrate inhibition, which are not reported in other prolidases. Computer models of <i>Lla</i>prol based on an X-ray structure of non-allosteric <i>Pyrococcus furiosus</i> prolidase showed that a loop structure (Loop^32-43) is located at the interface of the protomers of this homodimeric metallodipeptidase. This study investigated roles of four charged residues (Asp³⁶, His³⁸, Glu³⁹, and Arg⁴⁰) of Loop^32-43 in <i>Lla</i>prol using a combination of kinetic examinations of ten mutant enzymes and their molecular models. Deletion of the loop structure by Î36-40 mutant resulted in a loss of activity, indicating Loop^32-43 is crucial for the activity of <i>Lla</i>prol. D36S and H38S exhibited 96.2 % and 10.3 % activity of WT, whereas little activities (less than 1.0 % of WT activity) were observed for mutants E39S, D36S/E39S, R40S, R40E, R40K and H38S/R40S. These results implied that Glu³⁹ and/or Arg⁴⁰ play critical role(s) in maintaining the catalytic activity of <i>Lla</i>prol. These observations suggested that the loop structure is flexible and this attribute, relying on charge-charge interactions contributed by Arg⁴⁰, Glu³⁹ and Lys¹⁰⁸, is important in maintaining the activity of <i>Lla</i>prol. When the loop takes a conformation close to the active site (closed state), Asp³⁶ and His³⁸ at the tip of the loop can be involved in the catalytic reaction of <i>Lla</i>prol. The two active mutant prolidases (D36S and H38S) resulted in modifications of the unique characteristics; the allosteric behaviour was not observed for D36S, and H38S <i>Lla</i>prol showed no substrate inhibition. D36E/R293K, maintaining the negative charge of position 36 and positive charge of position 293, still possessed the allosteric behaviour, whereas the loss of the charges at these positions (D36S of this study and R293S of a previous study (Zhang et al., 2009 BBA-Proteins Proteom 1794, 968-975) eliminated the allosteric behaviour. These results indicated the charge-charge attraction between Asp³⁶ and Arg²⁹³ is important for the allostery of <i>Lla</i>prol. In the presence of either zinc or manganese divalent cations as the metal catalytic centre, D36S and H38S enzymes also showed different substrate preferences from WT <i>Lla</i>prol, implying the influence of Asp³⁶ and His³⁸ on the substrate binding. D36S and H38S also showed higher activities at pH 5.0 to 6.0, in which range WT <i>Lla</i>prol steeply decreased its activity, indicating Asp³⁶ and His³⁸ are involved in the active centre and influence the microenvironment of catalytic His²⁹⁶. The above observations are attributed to modifications of their local structure in the active centre since the temperature dependency and thermal denaturing temperature indicated little effects on the overall structure of the <i>Lla</i>prol mutants.</p> <p>From these results, we concluded that the unique behaviours of <i>Lla</i>prol are correlated to Loop^32-43 and Asp³⁶ and His³⁸ on it. When Loop^32-43 takes a closed conformation, Asp³⁶ interacts with Arg²⁹³ via charge-charge attraction to form an allosteric subsite. The saturation of the allosteric site with substrates further allowed the communications of His³⁸ with S₁ site residues to complete the active site. When the substrate concentration becomes higher than it is required to saturated productive S₁' site, His³⁸, Phe¹⁹⁰ and Arg²⁹³ would resemble the residue arrangement of S₁' site residues (His²⁹², Tyr³²⁹, and Arg³³⁷) and bind to the proline residue of substrates. This non-productive binding would prevent the conformational change of Loop^32-43, which further results in the substrate inhibition. For further confirmation of this mechanism, crystallographic studies will be conducted. In this thesis, we have indentified the conditions to produce crystals of <i>Lla</i>prol proteins.</p>

Rapid progress over the last decade on large area thin film transistor (TFT) arrays led to the emergence of high-performance, low-power, low-cost active matrix flat panel imagers. Despite the shortcomings associated with the instability and low mobility of TFTs, the amorphous silicon TFT technology still remains the primary solution for the backplane of flat panel imagers. The use of a-Si:H TFTs as the building block of the large area integrated circuit becomes challenging particularly when the role of the TFT is extended from traditional switching applications to on-pixel signal amplifier for large area digital imaging. This is the idea behind active pixel sensor (APS) architectures in which under each pixel an amplifier circuit consisting of one or two switching TFTs integrated with one amplifying TFT is fabricated. To take advantage of the full potential of these amplifiers, it is crucial to develop APS architectures to compensate for the limitations of the TFTs. In this thesis several APS architectures are designed, simulated, fabricated, and tested addressing these challenges using the mask sets presented in Appendix A. The proposed APS architectures can compensate for inherent stabilities of the comprising TFTs. Therefore, the sensitivity of their output data to the transistor variations is significantly suppressed. This is achieved by using a well defined external current source instead of the traditional voltage source to reset the APS architectures during the reset cycle of their periodic operation. The performance of these circuits is analyzed in terms of their stability, settling time, noise, and temperature-dependence. For appropriate readout of the current mode APS architectures, high gain transresistance amplifiers with correlated double sampling capability is designed, simulated and fabricated in CMOS technology. Measurement and measurement based calculation results reveal that the proposed APS architectures can meet even the stringent requirements of low noise, real-time digital fluoroscopy.

X-ray imaging has become one of the most pervasive and effective means of diagnosis in medical clinics today. As more imaging systems transition to digital modes of capture and storage, new applications of x-ray imaging, such as tomosynthesis, become feasible. These new imaging modalities have the potential to expose patients to large amounts of radiation so the necessity to use sensitive imagers that reduce dose and increase contrast is essential. An experimental design that utilizes laterally oriented detectors and amorphous semiconductors on crystalline silicon substrates has been undertaken in this study. Emphasis on fabricating a device suitable for medical x-ray imaging is the key principle throughout the design process. This study investigates the feasibility and efficiency of a new type of x-ray imager that combines the high speed, low noise, and potential complexity of CMOS circuit design with the high responsivity, large area uniformity, and flexibility of amorphous semiconductors. Results show that the design tradeoffs made in order to create a low cost, high fill factor, and high speed imager are realistic. The device exhibits good responsively to optical light, possesses a sufficient capacitive well, and maintains CMOS characteristics. This study demonstrates that with sufficient optimization it may be possible to design and deploy real time x-ray system on chip imagers similar to those used in optical imaging.

X-ray absorption spectroscopy (XAS) is a powerful probe of electronic and spatial structure that has been at the heart of many advances in physics, biology, chemistry, engineering and the earth sciences. Unfortunately, the existing experimental techniques are subject to fundamental limitations that complicate the interpretation of x-ray absorption spectra in many important cases. These limitations have motivated an effort to develop an alternative measure of the absorption cross-section that is not subject to the same set of limitations. In this thesis, a technique known as inverse partial fluorescence yield (IPFY) is described which addresses this problem. IPFY differs from existing approaches in a significant way — by using an energy-discriminating photon detector, one gains access to fluorescence information from both resonant and non-resonant x-ray emission processes. We will show that the non-resonant emission is fundamentally related to the total absorption cross-section of a material through an inverse relation. This will be proven by extension of the general theory of fluorescence yield for the case of a thick, homogeneous specimen. We will also demonstrate the utility of IPFY with measurements of NiO, NdGaO₃, LNSCO, and stainless steel 304 at soft and intermediate x-ray energies. These experiments will highlight some essential features of IPFY spectroscopy and demonstrate how it can be an invaluable tool when the other experimental techniques fail to provide reliable spectra. We will also demonstrate how one can exploit the geometry dependence of IPFY to quantitatively determine the composition of a sample and the total x-ray absorption coefficient. Additionally, we will consider the special cases of multilayers and powder specimens, where the theory of fluorescence yield requires approximations and is not as well-behaved as in thick, homogenous specimens. Ultimately, these experiments and theoretical developments will be used to support the claim that IPFY is a bulk sensitive measure of the total x-ray absorption coefficient. Moreover, we will show that IPFY is not affected by saturation effects, is insensitive to surface contamination layers and provides reliable spectra even for strongly insulating materials. These properties make IPFY a suitable spectroscopic technique for studying XAS in a wide range of materials.

Amorphous selenium (a-Se) and its alloys are important photoconductor materials used in direct conversion flat panel digital x-ray detectors. The performance of these detectors is determined, in part, by the electronic transport properties of the a-Se photoconductor layer namely, the charge carrier mobility m and the deep trapping lifetime t. The product of the mobility and the lifetime mt, referred to as the charge carrier range, determines the average distance that photo-generated charge will travel before being removed from the transport band by deep localized states in the mobility gap of the semiconductor. The loss of carriers to these deep states reduces the amount of charge collected per unit of x-ray exposure, and, hence, limits the x-ray sensitivity of the detector. Two experimental techniques that may be used to measure the transport properties of holes and electrons in high resistivity semiconductors are described in this thesis. The Time-of-Flight (TOF) transient photoconductivity technique is used to evaluate the charge carrier mobility by measuring the time required for the charge carriers to transit a fixed distance under the influence of an applied electric field. The Interrupted-Field Time-of-Flight (IFTOF) technique is used to determine the charge carrier deep trapping time; the drift of the injected carriers is temporarily interrupted at a position in the sample by removing the applied field. When the field is reapplied the number of charge carriers has decreased due to trapping events. The carrier lifetime is determined from the dependence of the fraction of recovered charge carriers before and after the interruption with the interruption time. <p> TOF and IFTOF measurements were carried out on a number of samples of vacuum deposited selenium alloy x-ray photoconductors. Device quality photoconductor films are fabricated by evaporating a-Se source material that has been alloyed with a small quantitiy of As (~0.3 at. %) and doped with a halogen (typically Cl) in the p.p.m. range. The dependence of the carrier range on the composition of the photoreceptor film was accurately measured using both TOF and IFTOF measurements. It was found that the transport properties of the film could be controlled by suitably adjusting the composition of the alloy. Combined IFTOF and TOF measurements were also performed on several samples to examine the effects of trapped electrons on the hole transport properties in a-Se films. It was found that drifting holes recombine with the trapped electrons, and that this process could be described by a Langevin recombination process. This finding is important for the correct modeling of amorphous selenium digital x-ray detector designs. Finally, the effects of x-ray exposure on a-Se films were examined. A temporary reduction in the effective hole lifetime was observed due to an increase in the number of hole capture centers following an x-ray exposure. The capture coefficient between free holes and the x-ray induced hole capture centers was measured using combined TOF and IFTOF measurements. It was shown that this capture process was governed by the Langevin recombination mechanism. From these observations it was concluded that trapped electrons from a previous x-ray exposure act as recombination centers for subsequently generated holes, thereby reducing the effective hole lifetime in the sample.

The development of X-ray Beam Position Monitors (XBPM) used on the Canadian Light Source front ends is described in this thesis, from the design concepts to the practical implementation and commissioning. Surveyed into position to provide a fiducialized point of origin for incoming synchrotron radiation, the primary purpose of the XBPM is to provide a measure of synchrotron beam motion. Currently XBPMs have been installed on three beamlines at the Canadian Light Source, a 2.9 GeV third generation synchrotron radiation source. Two of the XBPMs are comprised of chemical vapour deposition synthetic diamond blades coated with gold and installed on insertion device beamlines, while the third makes use of molybdenum blades for a dipole beamline. By incrementally scanning the blades of the XBPM through the synchrotron beam it is possible to determine the monitors� spatial resolution to beam motion. For the commissioned XBPM a typical spatial resolution of +/- 1 micron of beam motion was achieved; and the thermal power loading capacity has been tested to the 2/5 of maximum value. An independent white beam profiler, comprised of a converter crystal and image acquisition software, was constructed to corroborate the functionality of the XBPM.

Modern communication systems require high performance radio frequency (RF) and microwave circuits and devices. This is becoming increasingly challenging to realize in the content of cost/size constraints. Integrated circuits (ICs) satisfy the cost/size requirement, but performance is often sacri¯ced. For instance, high quality factor (Q factor) passive components are difficult to achieve in standard silicon-based IC processes.<p>In recent years, microelectromechanical systems (MEMS) devices have been receiving increasing attention as a possible replacement for various on-chip passive elements, offering potential improvement in performance while maintaining high levels of integration. Variable capacitors (varactor) are common elements used in various applications. One of the MEMS variable capacitors that has been recently developed is built using deep X-ray lithography (as part of the LIGA process). This type of capacitor exhibits high quality factor at microwave frequencies.<p>The complementary metal oxide semiconductor (CMOS) technology dominates the silicon IC process. CMOS becomes increasingly popular for RF applications due to its advantages in level of integration, cost and power consumption. This research demonstrates a CMOS voltage-controlled oscillator (VCO) design which is used to investigate methods, advantages and problems in integrating LIGA-MEMS devices to CMOS RF circuits, and to evaluate the performance of the LIGA-MEMS variable capacitor in comparison with the conventional on-chip CMOS varactor. The VCO was designed and fabricated using TSMC 0.18 micron CMOS technology. The core of the VCO, including transistors, resistors, and on-chip inductors was designed to connect to either an on-chip CMOS varactor or an off-chip LIGA-MEMS capacitor to oscillate between 2.6 GHz and 2.7 GHz. Oscillator phase noise analysis is used to compare the performance between the two capacitors. The fabricated VCO occupied an area of 1 mm^2.<p>This initial attempt at VCO fabrication did not produce a functional VCO, so the performance of the capacitors with the fabricated VCO could not be tested. However, the simulation results show that with this LIGA-MEMS capacitor, a 6.4 dB of phase noise improvement at 300 kHz offset from the carrier is possible in a CMOS-based VCO design.

The Drosophila mutant fumble has a defect in mitochondrially targeted pantothenate kinase (PANK) and exhibits a movement disorder in the females. The human disease pantothenate kinase associated neurodegeneration (PKAN) has the same genetic defect and a neurodegenerative phenotype as well as iron accumulation in the brain. We have found that fumble females accumulate almost 2 fold more iron in the heads than wildtype. Dietary iron supplementation increases the iron accumulation in the heads further. The small isoform of malvolio (MVL), a homologue of mammalian NRAMP iron transporters, is expressed in the heads of flies. Its expression is upregulated in the fumble females, as well as in dietary iron supplemented wildtype flies. Unlike in the wildtype, dietary iron supplementation leads to a downregulation of MVL in the fumble flies. Although iron levels were elevated in fumble, ferritin expression was relatively unchanged and remained unchanged in the heads of fumble and wildtype with dietary iron supplementation. <p>The Drosophila mutant malvolio was used to determine how iron metabolism is affected when the MVL gene is defective. Iron levels were unchanged in malvolio relative to its parental strain (w1118) with or without dietary iron supplementation. Despite similar iron levels, a small decrease in ferritin expression was found in malvolio relative to w1118, and dietary iron increased ferritin expression in malvolio. However ferritin expression decreased in the parental strain of malvolio after iron supplementation. <p>Most of the iron in the Drosophila heads was in the form of goethite and ferrihydrite. The presence of iron oxides implies that this iron is in a mineralized storage form, likely ferritin. Dietary iron supplementation induced the appearance of ferric phosphates in fumble, malvolio, and wildtype. The subcellular location of this iron is unknown. It may be non-transferrin bound iron in the hemolymph, or a cytosolic intermediate in the labile iron pool. Also of note was the presence of transferrin-bound iron in wildtype heads on normal diet that was not seen after iron supplementation or in the heads of the fumble mutant. The presence in fumble of the kind of ferrihydrite characteristic of the mitochondrial protein frataxin may indicate that iron is accumulating in mitochondria.<p>The upregulation of MVL in the fumble mutant is of significant interest because it is the first protein involved in iron metabolism found to be altered with mitochondrial PANK deficiency. A disruption in MVL could be relevant to the brain iron accumulation in fumble and could be a treatment target for human PKAN.