Couches minces multiferroiques d’YMnO3 (YMO) films ont été synthétisée par MOCVD sur desubstrats de Si, STO, LAO et LSAT orientées (100). L'effet de l'épaisseur des couches et de lacomposition chimique sur les propriétés structurales et magnétiques a été étudié. YMO peutcristalliser dans deux structure : hexagonale (h-YMO) et orthorhombique (o-YMO), généralementconsidérée comme les phases stables et métastables, respectivement. Les deux phases, ainsi queleur phase précurseur amorphe sont étudiées dans cette thèse. D'un côté, une croissance sélectivede la phase amorphe, h-YMO ou o-YMO est réalisé sur des substrats de Si en ajustant lesconditions de dépôt. Une étude approfondie des conditions optimales a été réalisée. Unetransformation de phase irréversible de l'état amorphe à la phase cristalline o-YMO a lieu à unetempérature à peu près constante (~ 700 ° C) et dans un court période de temps (min ~). La phaseo-YMO ainsi obtenue est stable au moins jusqu'à 900 ° C.De l'autre côté, la phase o-YMO est stabilisé par épitaxie sur des substrats de type perovskite (STO,LAO, LSAT). Les films sur STO et LSAT présentent principalement l’orientation (010) tandis queceux sur les substrats de LAO sont orientées (101). Une orientation secondaire de domaines estobservée en particulier sur des substrats de STO: rotation de 90 ° dans le plan du domaine (010).A des faibles épaisseurs les couches sont contraintes. Les mesures magnétiques montrent uncomportement de verre de spin pour chacune de phase o- ou h-YMO, indépendamment du substrat. / Multiferroic YMnO3 (YMO) films have been grown by MOCVD on (100)-oriented Si, STO, LAOand LSAT substrates. The effect of the film thickness and the chemical composition on structuraland magnetic properties has been investigated. YMO can crystallize in two structure: hexagonal(h-YMO) and orthorhombic (o-YMO), generally considered as stable and metastable phases,respectively. Both phases, together with their amorphous precursor phase, are studied in this thesis.On one side, a selective growth of the amorphous, o-YMO or h-YMO phase is achieved on Sisubstrates through the deposition conditions. An extensive study of the optimal conditions hasbeen carried out. An irreversible phase transformation from amorphous to crystalline o-YMOphase takes place at an almost constant temperature (~ 700 °C) and in a short period of time (~min). The o-YMO phase thus obtained is stable at least up to 900 °C.On the other side, the o-YMO phase is epitaxially stabilized on perovskite type substrates (STO,LAO, LSAT). The films on STO and LSAT substrates present mainly the (010) orientation whilethose on LAO substrate are (101)-oriented. Secondary domain orientation are observe in particularon STO substrates: (010) in plane with 90° rotation. Strained films are observed for smallthicknesses. The magnetic measurements show a spin glass behavior for either o- or h-YMO phase,independently of the substrate.

Matériaux multiferroïques ont suscité beaucoup d'intérêt au cours des dernières années. Notre étude est consacrée à un système prototype: manganite d'yttrium. En particulier, nous nous concentrons sur les propriétés ferroélectriques sous forme massive monocristalline et sous forme de couches minces. Manganite d'yttrium appartient à la classe des composés ABO3. La plupart des études théoriques de la ferroélectricité à ce jour se sont concentrées sur perovskite cubique ABO3. Manganite d'yttrium est hexagonale et est un ferroélectrique impropre. Nous nous sommes intéressés à étudier théoriquement et expérimentalement comment ces deux fonctions se comportent sous forme de film mince. / Multiferroic materials have attracted much interest during the recent years. Our study is devoted to a prototypic system: yttrium manganite. In particular, we focus on the ferroelectric properties in bulk and in thin film form. Yttrium manganite belongs to the class of ABO3 compounds. Most theoretical studies of ferroelectricity to date were concentrated on cubic perovskite ABO3. Yttrium manganite is hexagonal and is an improper ferroelectric. We were interested to study theoretically and experimentally how these two features behave in thin film form.

Matériaux multiferroïques ont suscité beaucoup d'intérêt au cours des dernières années. Notre étude est consacrée à un système prototype: manganite d'yttrium. En particulier, nous nous concentrons sur les propriétés ferroélectriques sous forme massive monocristalline et sous forme de couches minces. Manganite d'yttrium appartient à la classe des composés ABO3. La plupart des études théoriques de la ferroélectricité à ce jour se sont concentrées sur perovskite cubique ABO3. Manganite d'yttrium est hexagonale et est un ferroélectrique impropre. Nous nous sommes intéressés à étudier théoriquement et expérimentalement comment ces deux fonctions se comportent sous forme de film mince.

Transition metal oxides adopt a wide variety of crystal structures and display a diverse range of physical phenomena from Mott insulating states to electron-nematics to unconventional superconductivity. Detailed understanding of these states and how they may be manipulated by structural modifications requires both precise structural knowledge and in-depth physical property measurements using as many techniques over as wide a range of phase space as possible. In the work described in this thesis a range of transition metal oxides were studied using high-resolution powder neutron diffraction and detailed low-temperature physical property measurements. The quaternary barium orthotellurates Ba₂NiTeO₆, Ba₂CuTeO₆ and Ba₂ZnTeO₆ belong to an almost unstudied family of materials. The development of procedures for synthesizing large single crystals has facilitated the investigation of interesting new anisotropic magnetic states in the Cu and Ni systems and the existence of a possible structural phase transition in the Zn-based compound. YMnO₃ is a multiferroic with improper ferrielectricity. The study of the high-temperature structural phases described in this thesis has led to the identification both of the transition path to the ferrielectric state and the identification of an isostructural phase transition within the ferrielectric phase. BiFe₀.₇Mn₀.₃O₃ is also a multiferroic material but with proper ferroelectricity. The investigation of the structural phases of this compound have provided confirmation of the high-temperature phases with the reassignment of the symmetry of the highest-temperature phase which is intriguingly different to that of the unsubstituted material. Finally, an investigation of the electronic structures of the high conductivity delafossites PdCoO₂ and PdCrO₂ using micro-cantilever torque magnetometry measurements of quantum oscillations is described. This has resolved the warping of the Fermi surface of PdCoO₂ and given insights into the complicated Fermi surface of the itinerant antiferromagnet PdCrO₂.

Memristor, defined as a two-terminal device which exhibits a pinched hysteresis loop in the current-voltage characteristics, is a main component of the resistive random access memory. Both memristor and memristive phenomena, known also as resistive switching (RS), have been thoroughly investigated in the past nearly two decades. This dissertation investigates YMnO3 thin films and explores a new concept concerning utilization of multiferroic properties for activation and/or enhancement of RS. It is hypothesized that the charged domain walls and/or vortex cores in YMnO3 thin films can act as an effective nanoscale features which support formation of the conductive filaments and, in consequence, enable development of an electroforming-free memristive structure. Results of the electrical characterization of YMnO3-based metal-insulator-metal structures indicate that hexagonal YMnO3 films deposited on metal-coated oxide substrate exhibit electroforming-free unipolar resistive switching (URS) while orthorhombic YMnO3 films grown on the doped oxide substrate show bipolar resistive switching (BRS). Observed URS is assigned to the formation and rupture of conductive, metallic-like filaments induced by the thermo-chemical phenomena. Results of polarity-dependent studies reveal that formation of conductive filaments proceeds in the electrostatic discharge event which is followed by their irreversible rupture during the reset process. Main properties of the observed URS include very good retention of programmed states, large memory window (between 10E+2 and 10E+4), high voltage and current required for set and reset, respectively, and low endurance. BRS is attributed to the complementary electronic and ionic processes within the p-n junction formed at the interface between p-YMnO3 and n-type oxide substrate. Results of ferroelectric characterization reveal that resistively switching YMnO3 films do not exhibit ferroelectric properties. Therefore, observed RS in YMnO3-based structures can not be directly related to the presence of charged domain walls and/or multiferroic vortex cores. Prospective functionality extension of YMnO3-based memristive devices is developed and presented on the example of photodetecting properties of metal-YMnO3-insulator-semiconductor stacks. Studies conducted within the framework of this doctoral dissertation investigate the resistive switching behaviour of YMnO3-based junctions. Obtained results contribute to the better understanding of the resistive switching and failure mechanisms in ternary oxides, and provide hints toward device engineering. / Der Memristor ist definiert als eine Zweipol-Vorrichtung, die eine hysteretische Strom-Spannungs-Charakteristik aufweist. Memristoren sind nichtflüchtige Widerstandsspeicher, deren elektrischer Widerstand mittels elektrischer Spannungspulse verändert werden kann. Sowohl Memristoren als auch memristive Widerstandsschalter (RS) werden seit mehr als zwei Jahrzehnten intensiv untersucht. Diese Dissertation untersucht YMnO3-Dünnschichten mit zirkularen Vorderseiten-Elektroden und unstrukturierten Rückseiten-Elektroden und erforscht ein neues Konzept über die Nutzung der multiferroischen Eigenschaften für die Aktivierung und/oder Verbesserung des memristiven Verhaltens. Es wird angenommen, dass die geladenen Domänenwände und/oder Vortices in YMnO3-Dünnschichten die Bildung leitfähiger Filamente wirksam unterstützt und folglich die Entwicklung eines neuartigen, formierungs-freiem Widerstandsspeichersermöglicht. Die Ergebnisse der elektrischen Charakterisierung von YMnO3-basierten Widerstandsschalter zeigen unipolares RS (URS), wenn eine metallische Rückseitenelektrode verwendet wird und bipolares RS (BRS), wenn als Rückseitenelektrode ein metallisch leitendes Oxid-Substrat verwendet werden. Das URS wird als thermochemisches RS klassifiziert und mit der Bildung und Auflösung metallisch leitender Filamente korreliert. Das BRS wird auf das Einfangen/Freigeben von Defekten in der Raumladungszone des YMnO3 im pn-Übergang von p-YMnO3/n-Nb:SrTiO3-Strukturen zurückgeführt. Die wichtigsten Eigenschaften des formierungsfreien URS sind die sehr gute Retention der programmiertenWiderstandszustände, große Speicherfenster (zwischen 10E+2 und 10E+4), die hohe Schreibspannung für den Set-Prozess und der hohe Schreibstrom für den Reset-Prozess. Die Endurance ist aufgrund der Degradation des Vorderseiten-Elektrode gering. Die Ergebnisse des polaritätsabhängigen Widerstandsschaltens zeigen, dass der Set-Prozess mit elektrostatischer Entladung einhergeht. Die ferroelektrische Charakterisierung zeigt, dass die YMnO3–Dünnfilme keine ferroelektrischen Eigenschaften aufweisen. Daher kann das beobachtete URS nicht direkt auf die Anwesenheit von geladenen Domänenwände und Vortices zurückgeführt werden. Darüberhinaus wurden die photodetektierenden Eigenschaften von Metall-YMnO3-Isulator-Halbleiter-Stacks als potenzielle Erweiterung der Funktionalität von YMnO3-basierten memristiven Bauelementen vorgestellt und vorgeschlagen. Im Rahmen der vorliegenden Dissertation wurde das Widerstandsschalten von multiferroischen, YMnO3-basierten Widerstandsschaltern untersucht. Die erhaltenen Ergebnisse tragen zu einem besseren Verständnis des Widerstandsschaltens von multiferroischen Materialien bei.

High dielectric constant materials have tremendous impact on miniaturization of devices that are used in various applications like wireless communication systems, microelectronics, global positioning systems, etc. To store electric charge in a very small space necessarily needs a capacitor with very high dielectric constant. Thus, these materials are very important in fabricating capacitors, or metal oxide semiconductor filed effect transistor (MOSFET). Among the existing commercially available devices, silicon-based microelectronic devices are commonly used based on the moderately stable dielectric constants of silicon with low losses and minimal temperature and frequency dependence. However, now-a-days, the perovskite based transition metal oxides have drawn attention that have the ability to fulfill all the requirements for being a good dielectric material in all the industrial applications. In this thesis we have studied a few selected perovskite based transition metal oxide systems in terms of their dielectric and magnetic behaviour. In Chapter 1, we have have given brief introductions about the some application of dielectric materials and the origin of dielectric and magnetic properties in the materials. We have also discussed about the polarisation in the dielectric materials to understand it’s frequency dependence and also to formalise different relaxation behaviour with the help of physical and mathematical explanation. In Chapter 2, we describe the various methodologies adopted in this thesis. In Chapter 3, we have studied the dielectric behaviour of Nd2NiMnO6, a rare earth based double perovskite ferromagnetic insulator. We successfully synthesised and characterised the compounds, settled the valency issues with the help of temperature dependent XAS of the transition metal atom in contrast to the existing controversy available in literature. We have found that this material shows relaxor kind behaviour with a colossal dielectric constant value. We have studied in details the origin of the colossal dielectric constant and the relaxation behaviour along with the a.c and d.c. transport properties. We have shown the origin of the ferromagnetism (TC ∼ 200 K) with a low temperature antiferromagnetic ordering (TN ∼ 55 K) with the help of detailed studies of temperature dependent d.c., a.c. magnetism and their XMCD. We have also investigated the isothermal variation of magnetodielectric and magnetoresistance behaviour as a function of magnetic field and their origin. In Chapter 4,we study the effect of cation anti-site disorder on the magnetic, dielectric and transport properties of another rare earth based ferromagnetic double perovskite insulator La2NiMnO6 by controlling different extent of anti-site disordered. We have confirmed the valency of the transition metal cations using XAS technique and followed by shown, different types of magnetic interaction between the transition metal cations using d.c magnetic, quantitative XMCD analysis and the origin of large dielectric response, a.c. transport & dielectric relaxation using temperature variation dielectric measurement as an experimental evidence in contrast of our previous speculation published in literature. We further have studied, the coupling between the magnetic and electric spin through isothermal magnetodielectric measurement. In Chapter 5, we have successfully synthesised and characterised a solid solution of YMnxIn1−xO3 series via different mol % of In doping in the multiferroic YMnO3 system. YMnO3 is a well known multiferroic material studied rigorously during past few decades. We have seen, YMnO3 which has a antiferromagnetic ordering temperature of ∼ 75 K suppressed with increasing the dopant concentration In. We have figured out the effect of In doping in the suppression of multiferroic phase and extended it to the dielectric properties. We have found that, the temperature dependence of dielectric constant shows an anomaly at the magnetic ordering temperature and studied magnetodielectric coupling. We have also investigated the temperature variation of dielectric relaxation and a.c. transport behaviour as a function of composition. In Chapter 6, we have identified the phase seperation and proposed a phase diagram as function of Gd doping in the Ho2−xGdxCuTiO6 double perovskite, where two end member, namely Ho2CuTiO6 and Gd2CuTiO6 are found to be in two different crystallographic phase as, hexagonal (P63cm) and orthorhombic (Pnmm), respectively. We have characterised the valency of the transition metal cations using XAS.We have seen very less temperature and frequency dependence of dielectric constant in hexagonal phase in compare to the orthorhombic phase and tried to figuring out from experimental analysis by performing temperature dependence dielectric const measurement. We also have shown the effect of doping in the origin of dielectric relaxation, a.c transport and magnetic behaviour of this system. In Chapter 7, we have synthesised and characterised successfully two different rare earth based layered perovskite La3Cu2VO9 and La4Cu3MoO12 compounds are of centrosymmetric space group. We have figured it of the valency of the different atoms present in the compound using XAS. We also do have observed the good temperature stability of dielectric constant of these materials and explored origin of mechanism in the dielectric relaxation, a.c. transport property by performing the temperature dependance dielectric measurement. The magnetic structure also have shown with the help of d.d. magnetic measurements. In Appendix A, we have seen the very stable dielectric constant constant from very low to above room temperature of the 2D nano PbS. The frequency stability of dielectric constant is also remarkable in compare to bulk PbS values available in literature. We have explored the origin of the conductivity and relaxation mechanism performing dielectric constant measurement. In conclusion, we investigate, in this thesis, dielectric properties of different transition metal oxides system and the mechanism of dielectric relaxation, a.c, d.c transport and their origin of magnetic response.