Made available in DSpace on 2017-07-21T19:25:46Z (GMT). No. of bitstreams: 1 Rubyan Lucas Santos Piazzetta.pdf: 4250981 bytes, checksum: c1d20c3e7f1d1d4307bef8d9dee045f7 (MD5) Previous issue date: 2015-03-23 / Fundação Araucária de Apoio ao Desenvolvimento Científico e Tecnológico do Paraná / This work studied tellurite glasses in a ternary system with the TeO2-Li2O-ZnO composition, divided in three groups with 10%, 15% and 20%mol Li2O fixed. For this study, was made the replacement of known TeO2 network former by ZnO. It used the Differential Scanning Calorimetry (DSC), optical absorption in ultraviolet-visible region (UV-VIS), Raman spectroscopy, Fourier transform infrared (FTIR), linear refractive index (n0) measurement and instrumented nanoindentation. The samples were prepared by melt quenching method in the bulk form. DSC results showed that the glass transition temperature (TG) virtually no change in the glass systems, while that there was an increase in the glass stability due to exchange of TeO2 by ZnO especially for 10 and 15% mol Li2O groups. By continuing, the UV-VIS results indicated a gradual increase in the band gap energy which was calculated by Urbach rule; this increased energy as TeO2 was replaced by ZnO, can also be seen as a blue shift. These same results were confirmed by a structural change seen by Raman spectroscopy: with the increased of ZnO, the vibrational modes located at 450 e 659 cm-1 which incorporate trigonal bipyramids of TeO4 are gradually replaced by vibrational modes at 735-760 cm-1 referred the creation of Zn2Te3O8 units. This behavior by Raman spectroscopy is also confirmed by the FTIR results with increased intensity of peaks related to vibrational modes of ZnO molecules. Therefore, it is verified that the addition of ZnO in the system has the property to decrease the amount of NBOs, which in turn decreases the polarizability of the oxide ion of the system and increases the band gap energy. Lastly, the increase in the band gap values and, Raman and DSC results showed that this glassy system acquires considerable glass stability, has good transmittance in the ultraviolet and visible regions, and thus appears as a promising candidate for host ions optically active. / Esta dissertação teve por objetivo estudar os vidros teluretos em um sistema ternário com composição TeO2-Li2O-ZnO, separados em três grupos com concentração fixa de 10%, 15% e 20% em mol de Li2O com a respectiva substituição do conhecido formador de rede TeO2 por ZnO. Tal estudo agregou as técnicas de Calorimetria Diferencial de Varredura (DSC), absorção óptica na região do ultravioleta-visível (UV-VIS), espectroscopia Raman, infravermelho por transformada de Fourier (FTIR), medidas de índice de refração linear (n0) e nanoindentação instrumentada. As amostras foram preparadas pelo método de melt quenching e obtidas na forma de bulk. Por meio dos resultados de DSC verificou-se que a temperatura de transição vítrea (TG) fica praticamente inalterada nesse sistema vítreo, enquanto que existe um aumento expressivo da estabilidade vítrea com a troca de TeO2 por ZnO, principalmente para os grupos com 10 e 15% em mol de Li2O. Já os resultados de UV-VIS mostraram um aumento gradual na energia de band gap, a qual foi calculada utilizando a Regra de Urbach. Esse aumento de energia, à medida que TeO2 era substituído por ZnO, também pode ser visto como um blue shift (deslocamento para o azul). Esse aumento de band gap foi confirmado por uma mudança estrutural vista por espectroscopia Raman: com o aumento na concentração de ZnO, os modos vibracionais localizados em 450 e 659 cm-1 que incorporam bipirâmides trigonais de TeO4 passam a ser gradualmente substituídos por modos vibracionais em 735-760 cm-1 que se referem a criação de unidades Zn2Te3O8. Esse comportamento por espectroscopia Raman também é confirmado através dos resultados de FTIR com aumento da intensidade dos picos relacionados a modos vibracionais de moléculas ZnO. É verificado assim que a adição de ZnO ao sistema tem a propriedade de diminuir a quantidade de NBOs, o que por sua vez, diminui a polarizabilidade do íon óxido do sistema e aumenta a energia de band gap. Com isto, o aumento nos valores de band gap e os resultados de DSC e Raman mostraram que esse sistema vítreo adquire considerável estabilidade vítrea, tem boa transmitância nas regiões do ultravioleta e visível e, assim, se mostra como um promissor candidato para hospedeiro de íons opticamente ativos.

Made available in DSpace on 2017-07-21T19:25:51Z (GMT). No. of bitstreams: 1 Anderson Goncalves.pdf: 4030302 bytes, checksum: 6c04b9e37c0aaf5b0f1e9c3ecb66a216 (MD5) Previous issue date: 2016-02-22 / Fundação Araucária de Apoio ao Desenvolvimento Científico e Tecnológico do Paraná / In this work were studied the tellurite glasses of the glass system (100-x-y)TeO2-yLi2O-xBaO obtained by melt quenching method and characterized by techniques X-Ray Diffraction (XRD), Differential Scanning Calorimetry (DSC), Raman Spectroscopy, Fourier Transform Infrared Spectroscopy (FTIR), UV-Vis Spectroscopy, linear refractive index and density measurements. The results of DRX measurements allowed classifying the samples with a standard characteristic diffraction amorphous structures. The DSC results show that the samples located close to the center of the glass-forming region have the highest values for the thermal stability, these being greater than 100 °C. Results of Raman spectroscopy show that there is a decrease in the connectivity of the network glass formed and of the TeO4 units with decreasing amount of tellurium. The units of TeO3+1 show an increase while for TeO3 units there is not a well defined behavior. The FTIR results show a decrease in TeO4 units and increase in TeO3 units with decreasing amount of tellurium. The Band Gap (Eg) energy values obtained are in agreement with those found in the literature for tellurite glasses. The results also indicate that electronic transitions that occur are of the type permitted indirect, still being observed an increase in Eg values as tellurium replaced. The structural changes create Non Bridging Oxygen (NBO), but the connection between the NBO and Te atoms is weak, which do not influence in Eg behavior. This influence starts to be strong above a certain value of BaO content (which depends on the Li2O content). While these values to the energy band gap increase, the values of the linear refractive index decreases, agreeing with what is presented in the literature. For polarizability ion oxide, only the samples with 5% Li2O shows behavior consistent with what is reported in the literature, inversely proportional to the Band Gap values and proportional to the refractive index. / Neste trabalho foram estudados os vidros teluretos do sistema vítreo (100-x-y)TeO2-yLi2O-xBaO obtidos pelo método de melt quenching e caracterizados pelas técnicas de Difração de Raios X (DRX), Calorimetria Diferencial de Varredura (DSC), Espectroscopia Raman, Espectroscopia no Infravermelho por Transformada de Fourier (FTIR), Espectroscopia UV-Vis, medidas de índice de refração linear e densidade. Os resultados das medidas de DRX permitiram classificar as amostras que apresentavam um padrão de difração característico de estruturas amorfas. Os resultados de DSC mostraram que as amostras localizadas próximas ao centro da região de formação vítrea apresentaram os maiores valores para a estabilidade térmica, sendo estes maiores que 100 °C. Os resultados de espectroscopia Raman mostraram que ocorre uma diminuição na conectividade da rede vítrea formada e das unidades de TeO4 com a diminuição da quantidade de telúrio. As unidades de TeO3+1 apresentaram um aumento, enquanto que para as unidades de TeO3 não há um comportamento bem definido. Os resultados de FTIR mostraram uma diminuição nas unidades de TeO4 e um aumento nas unidades de TeO3 com a diminuição da quantidade de telúrio. Os valores de energia de Band Gap (Eg) obtidos estão de acordo com os encontrados na literatura para vidros teluretos. Os resultados também indicam que as transições eletrônicas que ocorrem são do tipo permitida indireta, sendo observado ainda um aumento nos valores de Eg à medida que o telúrio é substituído. As modificações estruturais que ocorreram criam oxigênios não ligados (NBO – non-bridging-oxygen), mas os mesmos são fracamente conectados aos átomos de Te, não influenciando tanto nos valores de Eg até certa quantidade de BaO (que depende da quantidade de Li2O). Enquanto estes valores para a energia de Band Gap aumentam, os valores para o índice de refração linear diminuem, concordando com o que é apresentado pela literatura. Para a polarizabilidade do íon óxido, apenas as amostras com 5% de Li2O apresentaram comportamento coerente com o que é reportado na literatura, sendo inversamente proporcional ao Band Gap e proporcional ao índice de refração.

Dans cette thèse, nous nous sommes intéressés aux propriétés semi-conductrices des oxydes formés sur les alliages base nickel en milieu primaire des REP. L'objectif étant de mettre en évidence les effets de la pression partielle en hydrogène, de la nature de l'alliage et de l'état de surface sur les types de semi-conductions et les énergies de bandes interdites. La technique photoélectrochimique a été employée pour caractériser ces propriétés semi-conductrices. D'autres techniques de caractérisation complémentaires ont été également utilisées telles que le MEB-FEG, la diffraction des rayons X, la spectroscopie Raman et l'XPS. Les essais de corrosion ont été effectués en milieu primaire simulé (autoclave en titane, température 325°C, durée 500 heures). Des échantillons d'alliages 600 et 690 de polissage 1 µm diamant, ont été oxydés aux P(H2) < 0,01 ; 0,3 et 6,5 bar. L'état de surface ne concernait que l'alliage 600 oxydé à P(H2) = 0,3 bar. Nous avons utilisé une nouvelle méthode d'ajustement numérique pour la détermination des gaps. Les résultats obtenus montrent que seule la pression d'hydrogène affecte le type de semi-conduction des oxydes présentés par les hautes énergies, il passe du type-n (P(H2) < 0,01) en type proche de l'isolant (P(H2) = 0,3 et 6,5 bar). Un comportement du type-n a été enregistré à basse énergie quels que soit les paramètres d'étude. Les énergies de bande interdites des oxydes NiO, Cr2O3 et NiFe2O4 ont été révélées. / In this thesis, we are interested in semiconducting properties of oxides formed on nickel base alloys. The aim is to demonstrate the effects of hydrogen partial pressure, the nature of the alloy and the surface conditions on the semi-conduction type and the band gap energies. Photoelectrochemical technique was used to characterize the semiconducting properties. Other complementary techniques were also used such as FEG-SEM, X-ray diffraction, Raman spectroscopy and XPS. Corrosion tests were performed in simulated primary medium (titanium autoclave, temperature 325°C, duration 500 hours). Samples of alloys 600 and 690 of 1 µm diamond polishing were oxidized at P(H2) < 0,01 ; 0,3 et 6,5 bar. The surface conditions concerned only the alloy 600 oxidized at P(H2) = 0,3 bar. We used a new method for fitting energy spectra to obtain the band gap energies. The obtained results show that only the hydrogen pressure affects the semiconducting type of oxides presented by the high energies, it shift from n-type (P(H2) < 0,01 bar) to insulating type (P(H2) = 0,3 and 6,5 bar). An n-type behavior was recorded at low energy whatever the study parameters. Band gaps energies of NiO, Cr2O3 and NiFe2O4 were revealed.

Organic semiconductors are a new key technology for large-area and flexible thin-film electronics. They are deposited as thin films (sub-nanometer to micrometer) on large-area substrates. The technologically most advanced applications are organic light emitting diodes (OLEDs) and organic photovoltaics (OPV). For the improvement of performance and efficiency, correct modeling of the electronic processes in the devices is essential. Reliable characterization and validation of the electronic properties of the materials is simultaneously required for the successful optimization of devices. Furthermore, understanding the relations between material structures and their key characteristics opens the path for innovative material and device design. In this thesis, two material characterization methods are developed, respectively refined and applied: a novel technique for measuring the charge carrier mobility μ and a way to determine the ionization energy IE or the electron affinity EA of an organic semiconductor. For the mobility measurements, a new evaluation approach for space-charge limited current (SCLC) measurements in single carrier devices is developed. It is based on a layer thickness variation of the material under investigation. In the \"potential mapping\" (POEM) approach, the voltage as a function of the device thickness V(d) at a given current density is shown to coincide with the spatial distribution of the electric potential V(x) in the thickest device. On this basis, the mobility is directly obtained as function of the electric field F and the charge carrier density n. The evaluation is model-free, i.e. a model for μ(F, n) to fit the measurement data is not required, and the measurement is independent of a possible injection barrier or potential drop at non-optimal contacts. The obtained μ(F, n) function describes the effective average mobility of free and trapped charge carriers. This approach realistically describes charge transport in energetically disordered materials, where a clear differentiation between trapped and free charges is impossible or arbitrary. The measurement of IE and EA is performed by characterizing solar cells at varying temperature T. In suitably designed devices based on a bulk heterojunction (BHJ), the open-circuit voltage Voc is a linear function of T with negative slope in the whole measured range down to 180K. The extrapolation to temperature zero V0 = Voc(T → 0K) is confirmed to equal the effective gap Egeff, i.e. the difference between the EA of the acceptor and the IE of the donor. The successive variation of different components of the devices and testing their influence on V0 verifies the relation V0 = Egeff. On this basis, the IE or EA of a material can be determined in a BHJ with a material where the complementary value is known. The measurement is applied to a number of material combinations, confirming, refining, and complementing previously reported values from ultraviolet photo electron spectroscopy (UPS) and inverse photo electron spectroscopy (IPES). These measurements are applied to small molecule organic semiconductors, including mixed layers. In blends of zinc-phthalocyanine (ZnPc) and C60, the hole mobility is found to be thermally and field activated, as well as increasing with charge density. Varying the mixing ratio, the hole mobility is found to increase with increasing ZnPc content, while the effective gap stays unchanged. A number of further materials and material blends are characterized with respect to hole and electron mobility and the effective gap, including highly diluted donor blends, which have been little investigated before. In all materials, a pronounced field activation of the mobility is observed. The results enable an improved detailed description of the working principle of organic solar cells and support the future design of highly efficient and optimized devices.:1. Introduction 2. Organic semiconductors and devices 2.1. Organic semiconductors 2.1.1. Conjugated π system 2.1.2. Small molecules and polymers 2.1.3. Disorder in amorphous materials 2.1.4. Polarons 2.1.5. Polaron hopping 2.1.6. Fermi-Dirac distribution and Fermi level 2.1.7. Quasi-Fermi levels 2.1.8. Trap states 2.1.9. Doping 2.1.10. Excitons 2.2. Interfaces and blend layers 2.2.1. Interface dipoles 2.2.2. Energy level bending 2.2.3. Injection from metal into semiconductor, and extraction 2.2.4. Excitons at interfaces 2.3. Charge transport and recombination in organic semiconductors 2.3.1. Drift transport 2.3.2. Charge carrier mobility 2.3.3. Thermally activated transport 2.3.4. Diffusion transport 2.3.5. Drift-diffusion transport 2.3.6. Space-charge limited current 2.3.7. Recombination 2.4. Mobility measurement 2.4.1. SCLC and TCLC 2.4.2. Time of flight 2.4.3. Organic field effect transistors 2.4.4. CELIV 2.5. Organic solar cells 2.5.1. Exciton diffusion towards the interface 2.5.2. Dissociation of CT states 2.5.3. CT recombination 2.5.4. Flat and bulk heterojunction 2.5.5. Transport layers 2.5.6. Thin film optics 2.5.7. Current-voltage characteristics and equivalent circuit 2.5.8. Solar cell efficiency 2.5.9. Limits of efficiency 2.5.10. Correct solar cell characterization 2.5.11. The \"O-Factor\" 3. Materials and experimental methods 3.1. Materials 3.2. Device fabrication and layout 3.2.1. Layer deposition 3.2.2. Encapsulation 3.2.3. Homogeneity of layer thickness on a wafer 3.2.4. Device layout 3.3. Characterization 3.3.1. Electrical characterization 3.3.2. Sample illumination 3.3.3. Temperature dependent characterization 3.3.4. UPS 4. Simulations 5.1. Design of single carrier devices 5.1.1. General design requirements 5.1.2. Single carrier devices for space-charge limited current 5.1.3. Ohmic regime 5.1.4. Design of injection and extraction layers 5.2. Advanced evaluation of SCLC – potential mapping 5.2.1. Potential mapping by thickness variation 5.2.2. Further evaluation of the transport profile 5.2.3. Injection into and extraction from single carrier devices 5.2.4. Majority carrier approximation 5.3. Proof of principle: POEM on simulated data 5.3.1. Constant mobility 5.3.2. Field dependent mobility 5.3.3. Field and charge density activated mobility 5.3.4. Conclusion 5.4. Application: Transport characterization in organic semiconductors 5.4.1. Hole transport in ZnPc:C60 5.4.2. Hole transport in ZnPc:C60 – temperature variation 5.4.3. Hole transport in ZnPc:C60 – blend ratio variation 5.4.4. Hole transport in ZnPc:C70 5.4.5. Hole transport in neat ZnPc 5.4.6. Hole transport in F4-ZnPc:C60 5.4.7. Hole transport in DCV-5T-Me33:C60 5.4.8. Electron transport in ZnPc:C60 5.4.9. Electron transport in neat Bis-HFl-NTCDI 5.5. Summary and discussion of the results 5.5.1. Phthalocyanine:C60 blends 5.5.2. DCV-5T-Me33:C60 5.5.3. Conclusion 6. Organic solar cell characteristics: the influence of temperature 6.1. ZnPc:C60 solar cells 6.1.1. Temperature variation 6.1.2. Illumination intensity variation 6.2. Voc in flat and bulk heterojunction organic solar cells 6.2.1. Qualitative difference in Voc(I, T) 6.2.2. Interpretation of Voc(I, T) 6.3. BHJ stoichiometry variation 6.3.1. Voc upon variation of stoichiometry and contact layer 6.3.2. V0 upon stoichiometry variation 6.3.3. Low donor content stoichiometry 6.3.4. Conclusion from stoichiometry variation 6.4. Transport material variation 6.4.1. HTM variation 6.4.2. ETM variation 6.5. Donor:acceptor material variation 6.5.1. Donor variation 6.5.2. Acceptor variation 6.6. Conclusion 7. Summary and outlook 7.1. Summary 7.2. Outlook A. Appendix A.1. Energy pay-back of this thesis A.2. Tables and registers / Organische Halbleiter sind eine neue Schlüsseltechnologie für großflächige und flexible Dünnschichtelektronik. Sie werden als dünne Materialschichten (Sub-Nanometer bis Mikrometer) auf großflächige Substrate aufgebracht. Die technologisch am weitesten fortgeschrittenen Anwendungen sind organische Leuchtdioden (OLEDs) und organische Photovoltaik (OPV). Zur weiteren Steigerung von Leistungsfähigkeit und Effizienz ist die genaue Modellierung elektronischer Prozesse in den Bauteilen von grundlegender Bedeutung. Für die erfolgreiche Optimierung von Bauteilen ist eine zuverlässige Charakterisierung und Validierung der elektronischen Materialeigenschaften gleichermaßen erforderlich. Außerdem eröffnet das Verständnis der Zusammenhänge zwischen Materialstruktur und -eigenschaften einen Weg für innovative Material- und Bauteilentwicklung. Im Rahmen dieser Dissertation werden zwei Methoden für die Materialcharakterisierung entwickelt, verfeinert und angewandt: eine neuartige Methode zur Messung der Ladungsträgerbeweglichkeit μ und eine Möglichkeit zur Bestimmung der Ionisierungsenergie IE oder der Elektronenaffinität EA eines organischen Halbleiters. Für die Beweglichkeitsmessungen wird eine neue Auswertungsmethode für raumladungsbegrenzte Ströme (SCLC) in unipolaren Bauteilen entwickelt. Sie basiert auf einer Schichtdickenvariation des zu charakterisierenden Materials. In einem Ansatz zur räumlichen Abbildung des elektrischen Potentials (\"potential mapping\", POEM) wird gezeigt, dass das elektrische Potential als Funktion der Schichtdicke V(d) bei einer gegebenen Stromdichte dem räumlichen Verlauf des elektrischen Potentials V(x) im dicksten Bauteil entspricht. Daraus kann die Beweglichkeit als Funktion des elektrischen Felds F und der Ladungsträgerdichte n berechnet werden. Die Auswertung ist modellfrei, d.h. ein Modell zum Angleichen der Messdaten ist für die Berechnung von μ(F, n) nicht erforderlich. Die Messung ist außerdem unabhängig von einer möglichen Injektionsbarriere oder einer Potentialstufe an nicht-idealen Kontakten. Die gemessene Funktion μ(F, n) beschreibt die effektive durchschnittliche Beweglichkeit aller freien und in Fallenzuständen gefangenen Ladungsträger. Dieser Zugang beschreibt den Ladungstransport in energetisch ungeordneten Materialien realistisch, wo eine klare Unterscheidung zwischen freien und Fallenzuständen nicht möglich oder willkürlich ist. Die Messung von IE und EA wird mithilfe temperaturabhängiger Messungen an Solarzellen durchgeführt. In geeigneten Bauteilen mit einem Mischschicht-Heteroübergang (\"bulk heterojunction\" BHJ) ist die Leerlaufspannung Voc im gesamten Messbereich oberhalb 180K eine linear fallende Funktion der Temperatur T. Es kann bestätigt werden, dass die Extrapolation zum Temperaturnullpunkt V0 = Voc(T → 0K) mit der effektiven Energielücke Egeff , d.h. der Differenz zwischen EA des Akzeptor-Materials und IE des Donator-Materials, übereinstimmt. Die systematische schrittweise Variation einzelner Bestandteile der Solarzellen und die Überprüfung des Einflusses auf V0 bestätigen die Beziehung V0 = Egeff. Damit kann die IE oder EA eines Materials bestimmt werden, indem man es in einem BHJ mit einem Material kombiniert, dessen komplementärer Wert bekannt ist. Messungen per Ultraviolett-Photoelektronenspektroskopie (UPS) und inverser Photoelektronenspektroskopie (IPES) werden damit bestätigt, präzisiert und ergänzt. Die beiden entwickelten Messmethoden werden auf organische Halbleiter aus kleinen Molekülen einschließlich Mischschichten angewandt. In Mischschichten aus Zink-Phthalocyanin (ZnPc) und C60 wird eine Löcherbeweglichkeit gemessen, die sowohl thermisch als auch feld- und ladungsträgerdichteaktiviert ist. Wenn das Mischverhältnis variiert wird, steigt die Löcherbeweglichkeit mit zunehmendem ZnPc-Anteil, während die effektive Energielücke unverändert bleibt. Verschiedene weitere Materialien und Materialmischungen werden hinsichtlich Löcher- und Elektronenbeweglichkeit sowie ihrer Energielücke charakterisiert, einschließlich bisher wenig untersuchter hochverdünnter Donator-Systeme. In allen Materialien wird eine deutliche Feldaktivierung der Beweglichkeit beobachtet. Die Ergebnisse ermöglichen eine verbesserte Beschreibung der detaillierten Funktionsweise organischer Solarzellen und unterstützen die künftige Entwicklung hocheffizienter und optimierter Bauteile.:1. Introduction 2. Organic semiconductors and devices 2.1. Organic semiconductors 2.1.1. Conjugated π system 2.1.2. Small molecules and polymers 2.1.3. Disorder in amorphous materials 2.1.4. Polarons 2.1.5. Polaron hopping 2.1.6. Fermi-Dirac distribution and Fermi level 2.1.7. Quasi-Fermi levels 2.1.8. Trap states 2.1.9. Doping 2.1.10. Excitons 2.2. Interfaces and blend layers 2.2.1. Interface dipoles 2.2.2. Energy level bending 2.2.3. Injection from metal into semiconductor, and extraction 2.2.4. Excitons at interfaces 2.3. Charge transport and recombination in organic semiconductors 2.3.1. Drift transport 2.3.2. Charge carrier mobility 2.3.3. Thermally activated transport 2.3.4. Diffusion transport 2.3.5. Drift-diffusion transport 2.3.6. Space-charge limited current 2.3.7. Recombination 2.4. Mobility measurement 2.4.1. SCLC and TCLC 2.4.2. Time of flight 2.4.3. Organic field effect transistors 2.4.4. CELIV 2.5. Organic solar cells 2.5.1. Exciton diffusion towards the interface 2.5.2. Dissociation of CT states 2.5.3. CT recombination 2.5.4. Flat and bulk heterojunction 2.5.5. Transport layers 2.5.6. Thin film optics 2.5.7. Current-voltage characteristics and equivalent circuit 2.5.8. Solar cell efficiency 2.5.9. Limits of efficiency 2.5.10. Correct solar cell characterization 2.5.11. The \"O-Factor\" 3. Materials and experimental methods 3.1. Materials 3.2. Device fabrication and layout 3.2.1. Layer deposition 3.2.2. Encapsulation 3.2.3. Homogeneity of layer thickness on a wafer 3.2.4. Device layout 3.3. Characterization 3.3.1. Electrical characterization 3.3.2. Sample illumination 3.3.3. Temperature dependent characterization 3.3.4. UPS 4. Simulations 5.1. Design of single carrier devices 5.1.1. General design requirements 5.1.2. Single carrier devices for space-charge limited current 5.1.3. Ohmic regime 5.1.4. Design of injection and extraction layers 5.2. Advanced evaluation of SCLC – potential mapping 5.2.1. Potential mapping by thickness variation 5.2.2. Further evaluation of the transport profile 5.2.3. Injection into and extraction from single carrier devices 5.2.4. Majority carrier approximation 5.3. Proof of principle: POEM on simulated data 5.3.1. Constant mobility 5.3.2. Field dependent mobility 5.3.3. Field and charge density activated mobility 5.3.4. Conclusion 5.4. Application: Transport characterization in organic semiconductors 5.4.1. Hole transport in ZnPc:C60 5.4.2. Hole transport in ZnPc:C60 – temperature variation 5.4.3. Hole transport in ZnPc:C60 – blend ratio variation 5.4.4. Hole transport in ZnPc:C70 5.4.5. Hole transport in neat ZnPc 5.4.6. Hole transport in F4-ZnPc:C60 5.4.7. Hole transport in DCV-5T-Me33:C60 5.4.8. Electron transport in ZnPc:C60 5.4.9. Electron transport in neat Bis-HFl-NTCDI 5.5. Summary and discussion of the results 5.5.1. Phthalocyanine:C60 blends 5.5.2. DCV-5T-Me33:C60 5.5.3. Conclusion 6. Organic solar cell characteristics: the influence of temperature 6.1. ZnPc:C60 solar cells 6.1.1. Temperature variation 6.1.2. Illumination intensity variation 6.2. Voc in flat and bulk heterojunction organic solar cells 6.2.1. Qualitative difference in Voc(I, T) 6.2.2. Interpretation of Voc(I, T) 6.3. BHJ stoichiometry variation 6.3.1. Voc upon variation of stoichiometry and contact layer 6.3.2. V0 upon stoichiometry variation 6.3.3. Low donor content stoichiometry 6.3.4. Conclusion from stoichiometry variation 6.4. Transport material variation 6.4.1. HTM variation 6.4.2. ETM variation 6.5. Donor:acceptor material variation 6.5.1. Donor variation 6.5.2. Acceptor variation 6.6. Conclusion 7. Summary and outlook 7.1. Summary 7.2. Outlook A. Appendix A.1. Energy pay-back of this thesis A.2. Tables and registers