Referências de tensão são blocos fundamentais em uma série de aplicações de sinais mistos e de rádio frequência, como por exemplo, conversores de dados, PLL's e conversores de potência. A implementação CMOS mais usada para referências de tensão é o circuito Bandgap devido sua alta previbilidade, e baixa dependência em relação à temperatura e tensão de alimentação. Este trabalho estuda aplicação de Referência de Tensão Bandgap. O princípio, as topologias tradicionalmente usadas para implementar este método e as limitações que essas arquiteturas sofrem são investigadas. Será também apresentada uma pesquisa das questões recentes envolvendo alta precisão, operação com baixa tensão de alimentação e baixa potência, e ruído de saída para as referências Bandgap fabricadas em tecnologias submicrométricas. Além disso, uma investigação abrangente do impacto causado pelo o processo da fabricação e do ruído no desempenho da referência é apresentada. Será mostrado que o ruído de saída pode limitar a precisão dos circuitos Bandgap e seus circuitos de ajuste. Para desenvolver nosso trabalho, três Referências Bandgap foram projetadas utilizando o processo IBM 7RF 0.18 micra com uma tensão de alimentação de 1.8V. Também foram projetados os leiautes desses circuitos para prover informações pósleiaute extraídos e resultados de simulação elétrica. Este trabalho provê uma discussão de algumas topologias e das práticas de projeto para referências Bandgap. / A Voltage Reference is a pivotal block in several mixed-signal and radio-frequency applications, for instance, data converters, PLL's and power converters. The most used CMOS implementation for voltage references is the Bandgap circuit due to its highpredictability, and low dependence of the supply voltage and temperature of operation. This work studies the Bandgap Voltage References (BGR). The most relevant and the traditional topologies usually employed to implement Bandgap Voltage References are investigated, and the limitations of these architectures are discussed. A survey is also presented, discussing the most relevant issues and performance metrics for BGR, including, high-accuracy, low-voltage and low-power operation, as well as the output noise of Bandgap References fabricated in submicrometer technologies. Moreover, a comprehensive investigation on the impact of fabrication process effects and noise on the reference voltage is presented. It is shown that output noise can limit the accuracy of the BGR and trim circuits. To support and develop our work, three BGR´s were designed using the IBM 0.18 Micron 7RF process with a supply voltage of 1.8 V. The layouts of these circuits were also designed to provide post-extracted layout information and electrical simulation results. This work provides a comprehensive discussion on the structure and design practices for Bandgap References.

abstract: The larger tolerance to lattice mismatch in growth of semiconductor nanowires (NWs) offers much more flexibility for achieving a wide range of compositions and bandgaps via alloying within a single substrate. The bandgap of III-V InGaAsP alloy NWs can be tuned to cover a wide range of (0.4, 2.25) eV, appealing for various optoelectronic applications such as photodetectors, solar cells, Light Emitting Diodes (LEDs), lasers, etc., given the existing rich knowledge in device fabrication based on these materials. This dissertation explores the growth of InGaAsP alloys using a low-cost method that could be potentially important especially for III-V NW-based solar cells. The NWs were grown by Vapor-Liquid-Solid (VLS) and Vapor-Solid (VS) mechanisms using a Low-Pressure Chemical Vapor Deposition (LPCVD) technique. The concept of supersaturation was employed to control the morphology of NWs through the interplay between VLS and VS growth mechanisms. Comprehensive optical and material characterizations were carried out to evaluate the quality of the grown materials. The growth of exceptionally high quality III-V phosphide NWs of InP and GaP was studied with an emphasis on the effects of vastly different sublimation rates of the associated III and V elements. The incorporation of defects exerted by deviation from stoichiometry was examined for GaP NWs, with an aim towards maximization of bandedge-to-defect emission ratio. In addition, a VLS-VS assisted growth of highly stoichiometric InP thin films and nano-networks with a wide temperature window from 560◦C to 720◦C was demonstrated. Such growth is shown to be insensitive to the type of substrates such as silicon, InP, and fused quartz. The dual gradient method was exploited to grow composition-graded ternary alloy NWs of InGaP, InGaAs, and GaAsP with different bandgaps ranging from 0.6 eV to 2.2 eV, to be used for making laterally-arrayed multiple bandgap (LAMB) solar cells. Furthermore, a template-based growth of the NWs was attempted based on the Si/SiO2 substrate. Such platform can be used to grow a wide range of alloy nanopillar materials, without being limited by typical lattice mismatch, providing a low cost universal platform for future PV solar cells. / Dissertation/Thesis / Doctoral Dissertation Chemistry 2018

Made available in DSpace on 2014-06-11T19:22:31Z (GMT). No. of bitstreams: 0 Previous issue date: 2011-08-05Bitstream added on 2014-06-13T19:08:04Z : No. of bitstreams: 1 souza_fq_me_ilha.pdf: 803035 bytes, checksum: 9aab0ce0802cfc37e761960c21f93140 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Referências de tensão integradas com baixa sensibilidade à temperatura, tensão de a- limentação e eventos transitórios são componentes críticos na maioria dos circuitos integra- dos. Neste trabalho, além das restrições costumeiras, foi adicionada a preocupação com a in- terferência eletromagnética a qual vem ganhando muita importância devido a crescente polui- ção eletromagnética no ambiente. Assim, neste trabalho, propõe-se o projeto de uma referên- cia de tensão tipo bandgap com baixa susceptibilidade a interferência eletromagnética (EMI). O projeto deste circuito baseia-se na soma de duas correntes (referência de tensão baseada em corrente), uma com coeficiente complementar a temperatura absoluta (CTAT) e outra com coeficiente proporcional à temperatura absoluta (PTAT), aplicada sobre um resistor. Neste projeto, a susceptibilidade a interferência eletromagnética de uma referência de tensão band- gap é estudada por meio de simulação. Projetada para ser fabricada com a tecnologia CMOS 0,35 μm da AMS (Autriamicrosystems), a referência forneceu uma tensão de referência está- vel de 1,354 V em sua saída operando normalmente na faixa de temperatura de -40 a 150oC. Quando submetido à EMI, o circuito exibiu apenas 24,7 mV (quando filtros capacitivos são incluído) de offset induzido, para um sinal de interferência variando de 150 kHz a 1 GHz / Integrated voltage references with low sensitivity to temperature, supply voltage and transient events are critical requirements in the most of integrated circuits. In this work, be- sides the usual restrictions, was added to concern with electromagnetic interference which is gaining much importance due to increasing electromagnetic pollution on the environment. So, in this work, proposes the design of a bandgap voltage reference with low susceptibility to electromagnetic interference (EMI) is proposed. The design of the circuit is based on the sum of two currents (current-based voltage reference), one with coefficient complementary to ab- solute temperature (CTAT) and the other with coefficient proportional to absolute temperature (PTAT) into a resistor. In this work, the susceptibility to electromagnetic interference in a bandgap voltage reference is evaluated by simulations. Designed to be implemented in AMS (Autriamicrosystems) 0,35 μm CMOS process, the reference provides a stable voltage refer- ence equal to 1,354 V in the output working properly in the temperature range of -40 to 150oC. When EMI is injected, the circuit exhibits only 24,7 mV (when capacitive filters are included) of induced offset, for an interference signal varying in the frequency range of 150 kHz to 1 GHz

Referências de tensão são blocos fundamentais em uma série de aplicações de sinais mistos e de rádio frequência, como por exemplo, conversores de dados, PLL's e conversores de potência. A implementação CMOS mais usada para referências de tensão é o circuito Bandgap devido sua alta previbilidade, e baixa dependência em relação à temperatura e tensão de alimentação. Este trabalho estuda aplicação de Referência de Tensão Bandgap. O princípio, as topologias tradicionalmente usadas para implementar este método e as limitações que essas arquiteturas sofrem são investigadas. Será também apresentada uma pesquisa das questões recentes envolvendo alta precisão, operação com baixa tensão de alimentação e baixa potência, e ruído de saída para as referências Bandgap fabricadas em tecnologias submicrométricas. Além disso, uma investigação abrangente do impacto causado pelo o processo da fabricação e do ruído no desempenho da referência é apresentada. Será mostrado que o ruído de saída pode limitar a precisão dos circuitos Bandgap e seus circuitos de ajuste. Para desenvolver nosso trabalho, três Referências Bandgap foram projetadas utilizando o processo IBM 7RF 0.18 micra com uma tensão de alimentação de 1.8V. Também foram projetados os leiautes desses circuitos para prover informações pósleiaute extraídos e resultados de simulação elétrica. Este trabalho provê uma discussão de algumas topologias e das práticas de projeto para referências Bandgap. / A Voltage Reference is a pivotal block in several mixed-signal and radio-frequency applications, for instance, data converters, PLL's and power converters. The most used CMOS implementation for voltage references is the Bandgap circuit due to its highpredictability, and low dependence of the supply voltage and temperature of operation. This work studies the Bandgap Voltage References (BGR). The most relevant and the traditional topologies usually employed to implement Bandgap Voltage References are investigated, and the limitations of these architectures are discussed. A survey is also presented, discussing the most relevant issues and performance metrics for BGR, including, high-accuracy, low-voltage and low-power operation, as well as the output noise of Bandgap References fabricated in submicrometer technologies. Moreover, a comprehensive investigation on the impact of fabrication process effects and noise on the reference voltage is presented. It is shown that output noise can limit the accuracy of the BGR and trim circuits. To support and develop our work, three BGR´s were designed using the IBM 0.18 Micron 7RF process with a supply voltage of 1.8 V. The layouts of these circuits were also designed to provide post-extracted layout information and electrical simulation results. This work provides a comprehensive discussion on the structure and design practices for Bandgap References.

In this work, we calculate the density of photon states (DOS) of the normal modes in dye-doped chiral nematic liquid crystal (LC) cells in the presence of various loss mechanisms. Losses and gain are incorporated into the transmission characteristics through the introduction of a small imaginary part in the dielectric constant perpendicular and along the director, for which we assume no frequency dispersion. Theoretical results are presented on the DOS in the region of the photonic band gap for a range of values of the loss coefficient and different values of the optical anisotropy. The obtained values of the DOS at the photonic band gap edges predict a reversal of the dominant modes in the structure. Our results are found to be in good agreement with the experimentally obtained excitation thresholds in chiral nematic LC lasers. The behaviour of the DOS is also discussed for amplifying LC cells providing an additional insight to the lasing mechanism of these structures. We subsequently investigate the spontaneous emission properties, under the assumption that the electronic transition frequency is close to the photonic edge mode of the structure (resonance). We take into account the transition broadening and the decay of electromagnetic field modes supported by the so-called 'mirror-less' cavity. We employ the Jaynes-Cummings Hamiltonian to describe the electron interaction with the electromagnetic field, focusing on the mode with the diffracting polarization in the chiral nematic layer. As known in these structures, the density of photon states, calculated via the Wigner method, has distinct peaks on either side of the photonic band gap, which manifests itself as a considerable modification of the emission spectrum. We demonstrate that, near resonance, there are notable differences between the behaviour of the density of states and the spontaneous emission profile of these structures. In addition, we examine in some detail the case of the logarithmic peak exhibited in the density of states in 2D photonic structures and obtain analytic relations for the Lamb shift and the broadening of the atomic transition in the emission spectrum. The dynamical behaviour of the atom-field system is described by a system of two first order differential equations, solved using the Green's function method and the Fourier transform. The emission spectra are then calculated and compared with experimental data. Finally, we detail a new technique for the pumping of dye lasers which requires no moving parts or flushing mechanisms and is applicable to both solid state and liquid based devices. A reconfigurable hologram is used to control the position of incidence of a pump beam onto a dye laser and significant increases in device lifetimes are achieved. The technique is also applied to wavelength tune a dye laser. This offers access to higher repetition rates and larger average output powers. With higher repetition rate pump lasers it is feasible that the approach could allow such organic lasers to reach operating frequencies on the order of MHz. The unique nature of the adaptive pumping method also allows precise control of the spatial wave-front and configuration of the pumping wave which allows greater versatility and functionality to be realised. It is possible to envisage that novel pump beam profiles that optimise propagation through the medium could also be demonstrated.

This work deals with principles of design low noise bandgap reference using multiple in the process EPI92. The voltage reference is described and theoretic analysis noise performances is made. Results are compared with measured data realized breadboard BG reference and fabricated low drop-out regulators, which using different accurate bandgap references cells.

京都大学 / 新制・課程博士 / 博士(理学) / 甲第22985号 / 理博第4662号 / 新制||理||1669(附属図書館) / 京都大学大学院理学研究科物理学・宇宙物理学専攻 / (主査)准教授 中 暢子, 教授 田中 耕一郎, 教授 石田 憲二 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DFAM

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Wide bandgap semiconductor visible light-emitting diodes (LED) development has spawned the prestigious Nobel Prize in Physics in 2014. Building upon this success, the scope of research has expanded to ultrawide bandgap semiconductors, which possess immense potential in the realm of deep ultraviolet (DUV) photonics. These materials have gained attention for their applicability in various areas, including public sterilization, solar-blind DUV communication, and real-time monitoring. Leveraging on the unique ultrawide tunable bandgap property, highly crystalline capability, and robust behavior, group III-Oxide and III-Nitride semiconductors were employed for sensitive DUV photodetector (PD) and efficient DUV emission, respectively. The primary research are as follows: • III-Oxide heteroepitaxial growth optimization: The influences of substrate temperature, laser energy, and oxygen pressure for the Ga2O3 growth are systematically investigated. Furthermore, the doping capability, multi-phase availability, and bandgap tunability are demonstrated. • Flexible Ga2O3 film growth and electronic devices: Flexible Mica substrate is employed to epitaxially grow κ-phase Ga2O3 thin film. The fabricated flexible PD has an Iphoton/Idark ratio of over 107 under DUV luminescence. The fatigue test performed with 1-3 cm bending radii and 10,000 bending cycles exhibits the robust flexibility of the demonstrated DUV PD. • Transferable Ga2O3 membrane for vertical electronics: Mica as a Ga2O3 growth platform enables the large-scale transfer of ultra-thin Ga2O3 membrane from mica to arbitrary tape due to the weak interfacial bond energy. A vertical and self-powered PD is demonstrated with a responsivity of 17 mA/W under DUV illumination and 0 V bias. • Interfacial mismatch engineering for freestanding Ga2O3 membrane: Looking beyond the hetero-mismatch and engineering the interfacial thermal strain between Si-doped Ga2O3 and AlN could result in the exfoliation of freestanding ultrathin Ga2O3 membrane, allowing vertical device configuration and preferable thermal management. The exfoliation mechanism has been clarified and vertical DUV PD with high on/off ratio is demonstrated. • Efficient III-Nitride LEDs: Buried polarization-induced tunneling junction is employed to suppress electron overflow and simultaneously enhance hole injection. Furthermore, monolithic integration of DUV and visible LEDs is proposed and demonstrated by deliberately cascading DUV and visible active regions, which could replace the current integration technique in the sterilization system.

No description available.