Bandgap voltage-reference circuits generate an appropriate amount of a voltage that varies proportionately to absolute temperature (called PTAT), to cancel the complementary to absolute temperature voltage variation (known as CTAT) of a current biased p-n junction diode so that the sum of the two voltages remains constant with respect to temperature. The bandgap voltage of Silicon is approximately 1.1V. It is inconveniently large to generate and use in short-channel circuits where the supply voltage is limited 1.2V. So the idea presented here is to maintain a constant reference voltage of around half the supply voltage (700mV) across a junction diode. A simple circuit for generating the bias current with appropriate temperature dependence for biasing a diode is presented. Simulation results in 55 nanometer technology demonstrate the feasibility of this scheme. The performance that is achievable is a reference voltage with less than 1 percent variation in the temperature range of 0 to 100 degrees C. / text

SAR-ADCs are very popular and suitable for conversions up to few tens of MHz with 8 to 12 bits of resolution. A very popular type is the Charge Redistribution SAR-ADC which is based on a capacitive array. Higher speeds can be achieved by using the interleaving technique where a number of SAR-ADCs are working in parallel. These speeds, however, can only be achieved if the reference voltage can cope with the switching of the capacitive array. In this thesis the design of a programmable voltage reference generator for a Charge Redistribution SAR-ADC was studied. A number of architectures were studied and one based on a Current Steering DAC was chosen because of the settling time that could offer to the Charge Redistribution SAR-ADC switching operation. This architecture was further investigated in order to spot the weak points of the design and try to minimize the settling time. In the end, the final design was evaluated and possible trimming techniques were proposed that could further speed up the design.

Orientador: Nobuo Oki / Banca: Cláudio Kitano / Banca: Márcio Barbosa Lucks / Resumo: Referências de tensão integradas com baixa sensibilidade à temperatura, tensão de a- limentação e eventos transitórios são componentes críticos na maioria dos circuitos integra- dos. Neste trabalho, além das restrições costumeiras, foi adicionada a preocupação com a in- terferência eletromagnética a qual vem ganhando muita importância devido a crescente polui- ção eletromagnética no ambiente. Assim, neste trabalho, propõe-se o projeto de uma referên- cia de tensão tipo bandgap com baixa susceptibilidade a interferência eletromagnética (EMI). O projeto deste circuito baseia-se na soma de duas correntes (referência de tensão baseada em corrente), uma com coeficiente complementar a temperatura absoluta (CTAT) e outra com coeficiente proporcional à temperatura absoluta (PTAT), aplicada sobre um resistor. Neste projeto, a susceptibilidade a interferência eletromagnética de uma referência de tensão band- gap é estudada por meio de simulação. Projetada para ser fabricada com a tecnologia CMOS 0,35 μm da AMS (Autriamicrosystems), a referência forneceu uma tensão de referência está- vel de 1,354 V em sua saída operando normalmente na faixa de temperatura de -40 a 150oC. Quando submetido à EMI, o circuito exibiu apenas 24,7 mV (quando filtros capacitivos são incluído) de offset induzido, para um sinal de interferência variando de 150 kHz a 1 GHz / Abstract: Integrated voltage references with low sensitivity to temperature, supply voltage and transient events are critical requirements in the most of integrated circuits. In this work, be- sides the usual restrictions, was added to concern with electromagnetic interference which is gaining much importance due to increasing electromagnetic pollution on the environment. So, in this work, proposes the design of a bandgap voltage reference with low susceptibility to electromagnetic interference (EMI) is proposed. The design of the circuit is based on the sum of two currents (current-based voltage reference), one with coefficient complementary to ab- solute temperature (CTAT) and the other with coefficient proportional to absolute temperature (PTAT) into a resistor. In this work, the susceptibility to electromagnetic interference in a bandgap voltage reference is evaluated by simulations. Designed to be implemented in AMS (Autriamicrosystems) 0,35 μm CMOS process, the reference provides a stable voltage refer- ence equal to 1,354 V in the output working properly in the temperature range of -40 to 150oC. When EMI is injected, the circuit exhibits only 24,7 mV (when capacitive filters are included) of induced offset, for an interference signal varying in the frequency range of 150 kHz to 1 GHz / Mestre

<p>This thesis investigates the possibility of realizing bandgap reference crcuits for processes having sub-1V supply voltage. With the scaling of gate oxide thickness supply voltage is getting reduced. But the threshold voltage of transistors is not getting scaled at the same rate as that of the supply voltage. This makes it difficult to incorporate conventional designs of bandgap reference circuits to processeshaving near to 1V supply voltage. In the first part of the thesis a comprehensive study on existing low voltage bandgap reference circuits is done. Using these ideas a low-power, low-voltage bandgap reference circuit is designed in the second part of the thesis work. </p><p>The proposed bandgap reference circuit is capable of generating a reference voltage of 0.730V. The circuit is implemented in 0.18µm standard CMOS technology and operates with 0.9V supply voltage, consuming 5µA current. The circuit achieves 7 ppm/K of temperature coefficient with supply voltage range from 0.9 to 1.5V and temperature range from 0 to 60C.</p>

This thesis investigates the possibility of realizing bandgap reference crcuits for processes having sub-1V supply voltage. With the scaling of gate oxide thickness supply voltage is getting reduced. But the threshold voltage of transistors is not getting scaled at the same rate as that of the supply voltage. This makes it difficult to incorporate conventional designs of bandgap reference circuits to processeshaving near to 1V supply voltage. In the first part of the thesis a comprehensive study on existing low voltage bandgap reference circuits is done. Using these ideas a low-power, low-voltage bandgap reference circuit is designed in the second part of the thesis work. The proposed bandgap reference circuit is capable of generating a reference voltage of 0.730V. The circuit is implemented in 0.18µm standard CMOS technology and operates with 0.9V supply voltage, consuming 5µA current. The circuit achieves 7 ppm/K of temperature coefficient with supply voltage range from 0.9 to 1.5V and temperature range from 0 to 60C.

Βασικός σκοπός της εργασίας αυτής, είναι η μελέτη και σχεδίαση ενός κυκλώματος ανάγνωσης χωρητικού βιοαισθητήρα χρησιμοποιώντας τάση αναφοράς. Τα κυκλώματα αυτά αποτελούν βασικό τμήμα σε πολλά ολοκληρωμένα κυκλώματα, καθώς μπορούν να παρέχουν σταθερή τάση. Αρχικά εξετάζεται η αρχή λειτουργίας τους, και παρουσιάζοντα κάποιες βασικές τοπολογίες που εφαρμόσθηκαν σε CMOS τεχνολογίες. Καθώς οι τεχνολογικές εξελίξεις επιβάλλουν όσο το δυνατόν χαμηλότερη κατανάλωση και οικονομία σε επιφάνεια πυριτίου η σχεδίαση επιλέγεται να πραγματοποιηθεί σε γνωστή CMOS τεχνολογία 90nm, με την βοήθεια του εργαλείου Cadence. Σκοπός είναι από την τάση εξόδου του κυκλώματος να μπορει να βρεθεί η διαφορά της χωρητικότητας των πυκνωτών της εισόδου. Αυτή η τάση στη συνέχεια μπορεί να δοθεί για ψηφιακή επεξεργασία, αφού περάσει από έναν ADC.Η τροφοδοσία του κυκλώματος ήταν στα 2.5 Volts και στις εξομοιώσεις που παρατίθενται παρουσιάστηκαν ικανοποιητικά επίπεδα θορύβου στην συχνότητα 1kHZ. / The subject of this thesis is the study and analysis of a readout circuit with capacitive biosensor using voltage reference. Being able to provide a stable output voltage, these circuits are indispensable building block of many analog integrated circuits. The first and second chapters discuss the operating principle and some conventional bandgap circuits, which have been introduced in CMOS technologies. As the process technologies are developing and impose constraints, such as low-power consumption and downscaling the expense of silicon area, the design option was a popular CMOS 90 nm technology, with the aid of the software program Cadence. The purpose of the circuit studied is to find the input capacitors differences from the output voltage. This output voltage can then be paid for digital processing, after passing through an ADC. The power circuit was at 2.5 Volts and at the simulations presented satisfactory noise level at 1kHZ.

Made available in DSpace on 2014-06-11T19:22:31Z (GMT). No. of bitstreams: 0 Previous issue date: 2011-08-05Bitstream added on 2014-06-13T19:08:04Z : No. of bitstreams: 1 souza_fq_me_ilha.pdf: 803035 bytes, checksum: 9aab0ce0802cfc37e761960c21f93140 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Referências de tensão integradas com baixa sensibilidade à temperatura, tensão de a- limentação e eventos transitórios são componentes críticos na maioria dos circuitos integra- dos. Neste trabalho, além das restrições costumeiras, foi adicionada a preocupação com a in- terferência eletromagnética a qual vem ganhando muita importância devido a crescente polui- ção eletromagnética no ambiente. Assim, neste trabalho, propõe-se o projeto de uma referên- cia de tensão tipo bandgap com baixa susceptibilidade a interferência eletromagnética (EMI). O projeto deste circuito baseia-se na soma de duas correntes (referência de tensão baseada em corrente), uma com coeficiente complementar a temperatura absoluta (CTAT) e outra com coeficiente proporcional à temperatura absoluta (PTAT), aplicada sobre um resistor. Neste projeto, a susceptibilidade a interferência eletromagnética de uma referência de tensão band- gap é estudada por meio de simulação. Projetada para ser fabricada com a tecnologia CMOS 0,35 μm da AMS (Autriamicrosystems), a referência forneceu uma tensão de referência está- vel de 1,354 V em sua saída operando normalmente na faixa de temperatura de -40 a 150oC. Quando submetido à EMI, o circuito exibiu apenas 24,7 mV (quando filtros capacitivos são incluído) de offset induzido, para um sinal de interferência variando de 150 kHz a 1 GHz / Integrated voltage references with low sensitivity to temperature, supply voltage and transient events are critical requirements in the most of integrated circuits. In this work, be- sides the usual restrictions, was added to concern with electromagnetic interference which is gaining much importance due to increasing electromagnetic pollution on the environment. So, in this work, proposes the design of a bandgap voltage reference with low susceptibility to electromagnetic interference (EMI) is proposed. The design of the circuit is based on the sum of two currents (current-based voltage reference), one with coefficient complementary to ab- solute temperature (CTAT) and the other with coefficient proportional to absolute temperature (PTAT) into a resistor. In this work, the susceptibility to electromagnetic interference in a bandgap voltage reference is evaluated by simulations. Designed to be implemented in AMS (Autriamicrosystems) 0,35 μm CMOS process, the reference provides a stable voltage refer- ence equal to 1,354 V in the output working properly in the temperature range of -40 to 150oC. When EMI is injected, the circuit exhibits only 24,7 mV (when capacitive filters are included) of induced offset, for an interference signal varying in the frequency range of 150 kHz to 1 GHz

This design covers the design of an integrated circuit (IC) in support of the active contact lens project at Cal Poly. The project aims to monitor intraocular eye pressure (IOP) to help diagnose and treat glaucoma, which is expected affect 6.3 million Americans by 2050. The IC is designed using IBM’s 130 nm 8RF process, is powered by an on-lens thin film 3.8 V rechargeable battery, and will be fabricated at no cost through MOSIS. The IC features a low-power linear regulator that powers a current-starved voltage-controlled oscillator (CSVCO) used for establishing a backscatter communication link. Additional circuitry is included to regulate power to and from the battery. An undervoltage lockout circuit protects the battery from deep discharge damage. When recharging, a rectifier and a voltage regulator provides overvoltage protection. These circuit blocks are biased primarily using a 696 mV subthreshold voltage reference that consumes 110.5 nA.

Neste trabalho é apresentado o projeto de uma fonte de tensão de referência, um circuito capaz de prover uma tensão invariante com a temperatura, a tensão de alimentação e o processo de fabricação. São apresentadas: as equações de funcionamento, os passos para a elaboração da uma topologia final, o dimensionamento dos parâmetros de projeto com o uso de algoritmos metaheurísticos, o desenho do layout e os resultados e análises finais. O projeto emprega a tecnologia CMOS de 0,35 &#956m com quatro camadas de metal da Austria Micro Systems, em que os VTH0\'s dos transistores NMOS e PMOS, modelo típico, são, respectivamente, 0,5 V e -0,7 V. O circuito de fonte de referência é do tipo bandgap e faz a soma ponderada de correntes proporcionais a temperatura para atingir uma tensão de referência. Obteve-se um circuito típico com 0,5 V de tensão de referência, coeficiente de temperatura de 15 ppm/ºC em intervalo de temperatura de -10 a 90ºC em 1,0 V de tensão de alimentação, regulação de linha de 263 ppm/V em um intervalo de variação de 1,0 V a 2,5 V em 27ºC, 2,7 &#956A de corrente consumida e área de 0,11 mm². A introdução de um bloco de ajuste de coeficiente de temperatura, com ajuste digital, permite que mais que 90% dos circuitos produzidos tenham um coeficiente de temperatura de até 30 ppm/ºC. As medidas realizadas no trabalho são provenientes de simulações elétricas realizadas com o ELDO e modelos BSIM3v3. / In this work is presented a design of a reference voltage source, circuits capable to provide an invariant voltage regardless of the temperature, power supply and fabrication process. It\'s presented: the operation equations, the steps to elaborate a final topology, the project parameter sizing using a metaheuristic algorithm, the drawing of the layout, and the final results and its analysis. The design employs an AMS-CMOS 0.35 &#956m technology with four metal levels, whose NMOS and PMOS VTH0\'s for a typical circuit is 0.5 V and -0.7 V. The reference voltage circuit is bandgap and performs a weighted summation of proportional temperature currents to achieve the voltage reference. A typical circuit was obtained with 0.5 V reference voltage, 15 ppm/ºC temperature coefficient in the temperature range of -10 to 90ºC under 1.0 V power supply, 263 ppm/V line regulation in the range of 1.0 V to 2.5 V under 27ºC, 2.7 &#956A power consumption in a 0.11 mm² area. For a projected circuit its also possible to ensure a temperate coefficient under 30 ppm/ºC, for more than 95% of the produced circuits, employing an adjustment block which ought to be digitally calibrated for each circuit.

<p>Many analog systems need a stable power supply voltage that does not vary with temperature and time in order to operate properly. In a battery operated system the battery voltage is not stable, e.g. it decreases with decreasing temperature and with ageing. In that case a voltage regulator must be used, that regulates the battery voltage and generates a stable supply voltage to power other circuitry. </p><p>In this thesis a voltage regulator to be used in a battery operated system has been designed which meets the given specification of stability and power capabilities. A voltage reference, which is a commonly used devise in analog circuits, was also designed. The role of a reference voltage in an electrical system is the same as for a tuning fork in a musical ensemble; to set a standard to which other voltages are compared. </p><p>A functionality to detect when the lifetime of the battery is about to run out was also developed.</p>