ZnO material based hetero-junctions are a potential candidate for the design andrealization of intrinsic white light emitting devices (WLEDs) due to several advantages overthe nitride based material system. During the last few years the lack of a reliable andreproducible p-type doping in ZnO material with sufficiently high conductivity and carrierconcentration has initiated an alternative approach to grow n-ZnO nanorods (NRs) on other ptypeinorganic and organic substrates. This thesis deals with ZnO NRs-hetero-junctions basedintrinsic WLEDs grown on p-SiC, n-SiC and p-type polymers. The NRs were grown by thelow temperature aqueous chemical growth (ACG) and the high temperature vapor liquid solid(VLS) method. The structural, electrical and optical properties of these WLEDs wereinvestigated and analyzed by means of scanning electron microscope (SEM), current voltage(I-V), photoluminescence (PL), cathodoluminescence (CL), electroluminescence (EL) anddeep level transient spectroscopy (DLTS). Room temperature (RT) PL spectra of ZnOtypically exhibit one sharp UV peak and possibly one or two broad deep level emissions(DLE) due to deep level defects in the bandgap. For obtaining detailed information about thephysical origin, growth dependence of optically active defects and their spatial distribution,especially to study the re-absorption of the UV in hetero-junction WLEDs structure depthresolved CL spectroscopy, is performed. At room temperature the CL intensity of the DLEband is increased with the increase of the electron beam penetration depth due to the increaseof the defect concentration at the ZnO NRs/substrate interface. The intensity ratio of the DLEto the UV emission, which is very useful in exploring the origin of the deep level emissionand the distribution of the recombination centers, is monitored. It was found that the deepcenters are distributed exponentially along the ZnO NRs and that there are more deep defectsat the root of ZnO NRs compared to the upper part. The RT-EL spectra of WLEDs illustrateemission band covering the whole visible range from 420 nm and up to 800 nm. The whitelightcomponents are distinguished using a Gaussian function and the components were foundto be violet, blue, green, orange and red emission lines. The origin of these emission lines wasfurther identified. Color coordinates measurement of the WLEDs reveals that the emitted lighthas a white impression. The color rendering index (CRI) and the correlated color temperature(CCT) of the fabricated WLEDs were calculated to be 80-92 and 3300-4200 K, respectively.

Th.--Sci.--Grenoble--I.N.P.G., 1984. N°: DE 163.

xviii, 177 p. : ill., maps. A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number. / This dissertation explores several important consequences of H 2 O-rich fluids in magmatic and ore-forming systems within continental arc crust. North Sister, a stratovolcano in the Oregon High Cascades, provides a window into magma generation processes in the deep crust. Eruption of a remarkably limited basaltic andesite composition over the lifespan of this volcano may reflect last equilibration of mantle derived magma within a deep crustal hot zone. High pressure, water-undersaturated phase equilibrium experiments show that an anhydrous, augite-rich gabbro at ∼12 kbar (40 km depth) and ∼ 1175°C is the most probable lithology with which North Sister basaltic andesite with ∼3.5 wt% H 2 O last equilibrated within the deep crust before erupting. While magma often erupts at the planets surface as at North Sister, a greater volume never reaches the surface and solidifies within the upper crust. Exsolution of magmatic fluids is an inevitable consequence of crystallization of hydrous crustal magmas. The fate of these fluids is the focus of the remainder of this dissertation. Modeling of CO 2 and H 2 O variations during crystallization of granitic magma reveals that exsolution of a large mass of fluid occurs only after CO 2 is largely degassed, creating ideal conditions for hydrofracturing and formation of porphyry copper deposits. CO 2 and H 2 O solubility relations suggest that H 2 O-rich magma was required to produce the porphyry-Cu-Mo deposit at Butte, Montana, which may explain its distinctively deep generation. Electron microprobe analyses of Ti in quartz and Zr in rutile in samples from Butte yield porphyry magma temperatures (630-770°C) that overlap substantially with hydrothermal vein temperatures (<430-750°C). Veins display large temperature ranges (50-250°C) that signify variable degrees of cooling of hot magmatic fluids upon contact with cooler wall rock during vein growth. Modeling of Ti diffusion in quartz suggests that individual dikes and veins likely cooled over short timescales (10s-1000s years), indicating that porphyry systems may evolve by episodic magmatic fluid injections with discrete thermal spikes. Modeling of Ti diffusion in quartz combined with electron backscatter diffraction maps show that small hydrothermal quartz veins likely formed by epitaxial growth. This dissertation includes co-authored material both previously published and in preparation for submission. / Committee in charge: A. Dana Johnston, Chairperson, Geological Sciences; Mark Reed, Member, Geological Sciences; Paul Wallace, Member, Geological Sciences; Richard P. Taylor, Outside Member, Physics

This work presents new method for determination of geological provenance based on the statistical analysis of cathodoluminescence spectra of marbles and carbonate rocks from various localities in the Bohemian Massif. Analysis is based on the combination of data from seven different measures of spectral similarity and provides results that are more robust than those obtained by approach based only on a single measure of similarity. These results may be further improved by employing meta-analysis that evaluates behaviour of spectra during the individual steps of analysis. Analysis was performed on the original cathodoluminescence spectra, as well as on the residual spectra in which relative variability was amplified by the subtraction of Gaussian trend present in all spectra of carbonates. By combining results from analysis and meta-analysis of both original and residual spectra it was possible to almost unambiguously determine provenance of samples from all studied localities. Agglomerative hierarchical clustering was employed as a supplementary method for classification of spectra. Out of 72 different methods for clustering, one was selected for both original and residual data based on the number of correctly classified spectra. Second part of this work presents analysis of cathodoluminescence...

The emission properties of bent ZnO microwires with diameters ranging from 1.5  μm to 7.3  μm are systematically investigated by cathodoluminescence spectroscopy at T ≈ 10 K. We induced uniaxial strains along the c-axis of up to ±2.9 %. At these high strain values, we observe a nonlinear shift of the emission energy with respect to the induced strain, and the magnitude of the energy shift depends on the sign of the strain. The linear and non-linear deformation potentials were determined to be D1=−2.50±0.05 eV and D2=−15.0±0.5 eV, respectively. The nonlinearity of the energy shift is also reflected in the observed spectral broadening of the emission peak as a function of the locally induced strain, which decreases with increasing strain on the compressive side and increases on the tensile side.

In this research, the transport properties of ZnO were studied through the use of electron and neutron beam irradiation. Acceptor states are known to form deep in the bandgap of doped ZnO material. By subjecting doped ZnO materials to electron and neutron beams we are able to probe, identify and modify transport characteristics relating to these deep accepter states. The impact of irradiation and temperature on minority carrier diffusion length and lifetime were monitored through the use of the Electron Beam Induced Current (EBIC) method and Cathodoluminescence (CL) spectroscopy. The minority carrier diffusion length, L, was shown to increase as it was subjected to increasing temperature as well as continuous electron irradiation. The near-band-edge (NBE) intensity in CL measurements was found to decay as a function of temperature and electron irradiation due to an increase in carrier lifetime. Electron injection through application of a forward bias also resulted in a similar increase of minority carrier diffusion length. Thermal and electron irradiation dependences were used to determine activation energies for the irradiation induced effects. This helps to further our understanding of the electron injection mechanism as well as to identify possible defects responsible for the observed effects. Thermal activation energies likely represent carrier delocalization energy and are related to the increase of diffusion length due to the reduction in recombination efficiency. The effect of electron irradiation on the minority carrier diffusion length and lifetime can be attributed to the trapping of non-equilibrium electrons on neutral acceptor levels. The effect of neutron irradiation on CL intensity can be attributed to an increase in shallow donor concentration. Thermal activation energies resulting from an increase in L or decay of CL intensity monitored through EBIC and CL measurements for p-type Sb doped ZnO were found to be the range of Ea = 112 to 145 meV. P-type Sb doped ZnO nanowires under the influence of temperature and electron injection either through continuous beam impacting or through forward bias, displayed an increase in L and corresponding decay of CL intensity when observed by EBIC or CL measurements. These measurements led to activation energies for the effect ranging from Ea = 217 to 233 meV. These values indicate the possible involvement of a SbZn-2VZn acceptor complex. For N-type unintentionally doped ZnO, CL measurements under the influence of temperature and electron irradiation by continuous beam impacting led to a decrease in CL intensity which resulted in an electron irradiation activation energy of approximately Ea = 259 meV. This value came close to the defect energy level of the zinc interstitial. CL measurements of neutron irradiated ZnO nanostructures revealed that intensity is redistributed in favor of the NBE transition indicating an increase of shallow donor concentration. With annealing contributing to the improvement of crystallinity, a decrease can be seen in the CL intensity due to the increase in majority carrier lifetime. Low energy emission seen from CL spectra can be due to oxygen vacancies and as an indicator of radiation defects.

This research investigated the effect of electron injection in III-Nitrides. The combination of electron beam induced current and cathodoluminescence measurements was used to understand the impact of electron injection on the minority carrier transport and optical properties. In addition, the application of the electron injection effect in optoelectronic devices was investigated. The impact of electron injection on the minority carrier diffusion length was studied at various temperatures in Mg-doped p-GaN, p-Al[subscript x]Ga[subscript 1-x]N, and p-Al[subscript x]Ga[subscript 1-x] N/GaN superlattices. It was found that Lsubscript n] experienced a multi-fold linear increase and that the rate of change of L[subscript n] decreased exponentially with increasing temperature. The effect was attributed to a temperature-activated release of the electrons, which were trapped by the Mg levels. The activation energies, E[subscript a], for the electron injection effect in the Mg-doped (Al)GaN samples were found to range from 178 to 267 meV, which is close to the thermal ionization energy of the Mg acceptor. The E[subscript a] observed for Al[subscript 0.15]Ga[subscript 0.85]N and Al[subscript 0.2]Ga[subscript 0.8]N was consistent with the deepening of the Mg acceptor level due to the incorporation of Al into the GaN lattice. The E[subscript a] in the homogeneously doped Al[subscript 0.2]Ga[subscript 0.8]N/GaN superlattice indicates that the main contribution to the electron injection effect comes from the capture of injected electrons by the wells (GaN). The electron injection effect was successfully applied to GaN doped with an impurity (Mn) other than Mg. Electron injection into Mn-doped GaN resulted in a multi-fold increase of the L[subscript n] and a pronounced decrease in the band-to-band cathodoluminescence intensity. The E[subscript a] due to the electron injection effect was estimated from temperature-dependent cathodoluminescence measurements to be 360 meV. The decrease in the band-to-band cathodoluminescence is consistent with an increase in L[subscript n] and these results are attributed to an increase in the minority carrier lifetime due to the trapping of injected electrons by the Mn levels. A forward bias was applied to inject electrons into commercially built p-i-n and Schottky barrier photodetectors. Up to an order of magnitude increase in the peak (360 nm) responsivity was observed. The enhanced photoresponse lasted for over four weeks and was attributed to an electron injection-induced increase of L[subscript n] and the lifetime.

Целью работы является высокотемпературный синтез ультрадисперсной кислородо-дефицитной керамики оксида алюминия и исследование люминесцентных свойств полученных керамик при импульсном возбуждении пучком электронов. В результате высокотемпературного синтеза исследуемого объекта получена ультрадисперсная керамика оксида алюминия. Показано, что интенсивный синтез в восстановительной среде приводит к изменению массы и геометрических параметров вследствие термического травления образцов. Исследована пористость синтезируемых образцов и построены диаграммы распределения частиц по размерам. Обнаружен рост интенсивности катодолюминесценции F-центров керамик, синтезированных в восстановительной среде в присутствие углерода, с увеличением температуры и длительности изотермического нагрева. Полученные керамики являются перспективными для их применения в дозиметрии ионизирующих излучений и радиотехнике. Проведен анализ экологических рисков и соблюдения правил безопасности жизнедеятельности при экспериментальных исследованиях. / The goal of current paper is to synthesize an ultrafine oxygen-deficient aluminum oxide ceramic by high-temperature technique and to study its luminescent properties by pulsed cathodoluminescence (PCL). Ultra dispersive aluminum oxide ceramics were obtained after high-temperature synthesis. It was shown that an intensive synthesis in a reducing atmosphere causes mass and geometric parameters changes due to samples thermal etching. The porosity of synthesized samples and constructed particle size distribution diagram were investigated. The growth of ceramics samples F-centers cathodoluminescence intensity due to temperature increase and duration of isothermal heating were observed. Ones were synthesized in reducing ambient with carbon presence Obtained ceramics samples are promising material for application in dosimetry of ionizing radiation and radio engineering. Analysis of environmental risks and health and safety regulations in experimental environment was carried out.

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