A novel photonic frequency discriminator has been developed. The discriminator utilizes a Mach Zehnder interferometer-assisted ring resonator to achieve enhanced linearity. A numerical frequency-domain two-tone test is performed to evaluate the unique design of the discriminator, particularly for suppression of the third order intermodulation distortion. The discriminator is switchable between linear-intensity and linear-field regimes by adjusting a phase delay on one arm of the Mach Zehnder interferometer. Through the simulation, the linear<intensity discriminator is shown to be advantageous. The discriminator is an optical ring resonator-Mach Zehnder interferometer synthesized passive filter. The ring resonator is made of Arsenic trisulfide (As2S3) and the bus waveguide is a Titanium<diffused Lithium niobate (LiNbO3) waveguide. This As2S3 ring-on-Ti:LiNbO3 hybrid structure offers electro-optic tunability of the device owing to a strong electro-optic effect of the substrate material. A large optical confinement factor achieved by vertical integration of the As2S3 strip waveguide on a LiNbO3 substrate enables a low loss ring resonator. The Mach Zehnder interferometer is formed by the optical path length difference of the birefringent LiNbO3 substrate instead of a physical Y-branch structure, which makes the fabrication tolerances relaxed. In order for this highly birefringent device to be characterized, each polarization mode must be measured separately. A novel algorithm which can measure the wavelength-swept Jones matrix including its phase response is devised. The efficacy of the algorithm is demonstrated by characterizing a ring resonator. Finally, the fabricated discriminator is fully characterized using the algorithm.

The content of this thesis encompasses the fundamentals, modelling, chip design, nanofabrication process, measurement setup, and experimental results of devices exploiting the optical properties of phase-change chalcogenide materials. Special attention is paid to integrated Si₃N₄ nanophotonic circuits for optical switching and memory applications, as well as to multilayer stacks for colour modulation. Herein, the implementation of the first robust, non-volatile, phase-change photonic memory is presented. By utilising optical near-field effects for Read, Write and Erase operations, bit storage of up to eight transmission levels is demonstrated in a single device employing Ge₂Sb₂Te₅ as the active material. These on-chip memory cells feature single-shot read-out of the transmission state and switching energies as low as 13.4pJ at speeds approaching 1GHz. The capability to readily switch between intermediate states is also demonstrated, a feature that requires complex iteration-based algorithms in electronic phase-change memories. This photonic memory is not only the first truly non-volatile memory---a long-term elusive goal in integrated photonics---but could also potentially represent the first multi-level memory, including electronic counterparts, that requires no computational post-processing or drift correction. These findings provide a pathway towards solving the throughput limitations of current computer architectures by eliminating the so-called von-Neumann bottleneck and portend a new paradigm in all-photonic memory, non-conventional computing, and tunable photonic devices. Finally, novel capabilities in electro-optic colour modulation using phase-change materials are demonstrated. In particular, this thesis offers the first implementation of Ag₃In₄Sb₇₆Te₁₇-based optical cavities for colour modulation on low-dimensional multilayer stacks. Moreover, "gray-scale" image writing is demonstrated by establishing intermediate levels of crystallisation via voltage modulation. This finding, in turn, corresponds to the first demonstration of nonvolatile colour-depth modulation in the emerging phase-change materials nanodisplay technology, featuring resolutions down to 50nm. Furthermore, a comprehensive comparison is carried out for two types of materials: growth- (Ag₃In₄Sb₇₆Te₁₇) and nucleation-dominated (Ge₂Sb₂Te₅) alloys in terms of colour, energy efficiency, and resolution. These results provide new tools for the new generation of bistable and ultra-high-resolution displays and smart glasses while allowing for other potential applications in photonics and optoelectronics.