This thesis is devoted to the fabrication of carbon nanotube structures for microelectronics packaging applications with an emphasis on fundamental studies of nanotube growth and assembly, wetting of nanotube structures, and nanotube-based composites. A CVD process is developed that allows controlled growth of a variety of CNT structures, such as CNT films, bundles, and stacks. Use of an Al2O3 support enhances the Fe catalyst activity by increasing the CNT growth rate by nearly two orders of magnitude under the same growth conditions. By introducing a trace amount of weak oxidants into the CVD chamber during CNT growth, aligned CNT ends can be opened and/or functionalized, depending on the selection of oxidants. By varying the growth temperature, CNT growth can be performed in a gas diffusion- or kinetics-controlled regime. To overcome the challenges that impede implementation of CNTs in circuitry, a CNT transfer process was proposed to assemble aligned CNT structures (films, stacks &bundles) at low temperature which ensures compatibility with current microelectronics fabrication sequences and technology. Field emission and electrical testing of the as-assembled CNT devices indicate good electrical contact between CNTs and solder and a very low contact resistance across CNT/solder interfaces. For attachment of CNTs and other applications (e.g. composites), wetting of nanotube structures was studied. Two model surfaces with two-tier scale roughness were fabricated by controlled growth of CNT arrays followed by coating with fluorocarbon layers formed by plasma polymerization to study roughness geometric effects on superhydrophobicity. Due to the hydrophobicity of nanotube structures, electrowetting was investigated to reduce the hydrophobicity of aligned CNTs by controllably reducing the interfacial tension between carbon nanotubes (CNTs) and liquids. Electrowetting can greatly reduce the contact angle of liquids on the surfaces of aligned CNT films. However, contact angle saturation still occurs. Variable frequency microwave (VFM) radiation can greatly improve the CNT/epoxy interfacial bonding strength. Compared to composites cured by thermal heating, VFM-cured composites demonstrate higher CNT/matrix interfacial bonding strength, which is reflected in composite negative thermal expansion. The improved CNT/epoxy interface enhances the thermal conductivity of the composites by 26-30%.

In this paper, polar free-standing (0002)GaN wafer were fabricated by using the hydride vapor phase epitaxy(HVPE) technique on (002) LiGaO2 substrates. Polar of The (0002) GaN affects its luminous efficiency, but compared to other surface between the substrate, it has the smallest lattice mismatch. With the high growth rate of HVPE, hoping to grow high quality GaN thick layer. In the self-designed reactor, Metallic gallium and NH3 were the source of Ga and N. Nitrogen and hydrogen were used as the carrier gases HCl and nitrogen was designed to pass through liquid Ga to form GaCl fully. GaN deposition was realized Efficaciously by conducted steady NH3 and GaCl flows to the substrate suface, accommodated with additional hydrogen and nitrogen atmosphere flows.The parameters set of research mainly focus on reaction pressure, temperature, and growth time. In order to obtain better crystal quality, more attempts were made to grow buffer layer by chemical vapor deposition first, then a thick GaN layer by HVPE. The next step is to do the experiment and analyze with various instruments. Scanning Electron Microscope and atomic force microscopy Atomic Force Microscpoic are used to observe the surface morphology. X-ray Diffracion and transmission electron microscopy are used to know the lattice structure, and to understand the interface between the substrate and the GaN film crystal structure and epitaxial relationship. Finally, Photoluminescence spectroscopy is used to measure its optical properties and compare its defects and epitaxial quality.

In this thesis, the growth of nonpolar m-plane zinc oxide (ZnO) nano-materials on (100) £^¡VLiAlO2 (LAO) substrates by a chemical vapor deposition (CVD) process had been studied. The mixture powders of ZnO and graphite are used as the precursor of reaction sources. Ar/O2 are used as the carrier gas and reaction gas source respectively, and the Au thin-film coated on the LAO substrate is the catalyst for the vapor-liquid-solid (VLS) growth mode. The X-ray diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM) were used to study the influence of the varied growth conditions, such as deposition time, reaction pressure, growth temperature, and the distance between substrates and reaction powder ¡K etc., on the crystal structure, surface morphology, orientation and microstructure characterizations of the ZnO nanostructure. The pure (10-10) m-plane ZnO nano-materials can be obtained at the growth parameters of 830¢XC, 10 torr, 5 minutes, and 50 sccm of Ar/O2. Furthermore, photoluminescence (PL), cathodoluminescence (CL) and Raman spectroscope (Raman) were used to study optical properties and the inner stress of the materials.

Metal diketonato complexes are populate in recent ten years, because of diketone compound is easy to get and cheap and also have good volatility to be the precursor of MOCVD, they usually can be the materials of wafer processing by high technology electronics industries. Many scientists are trying to synthesis these diketonato complexes, and find out the better reactivity compounds to be the precursor of MOCVD. In order to knowing the decompose activities of these complexes, we are trying to compare the metal-oxygen bonds of these diketonato complexes in this paper. By the way, these diketonato complexes have difference geometry in cis and trans form, and also have conformation isomers between syn and anti form. We will compare and discuss the structures and controlling factors in these kinds of diketonato complexes in this paper.

Carbon nanotubes have received considerable attention since their discovery due to their novel properties. They have potential application areas in physics, chemistry and biology. Arc discharge, laser furnace, chemical vapor deposition and floating catalyst methods are the most commonly used methods to produce carbon nanotubes. Although carbon nanotubes have superior properties compared to other materials, they could not be used widely. The main reasons of this are that continuous and large scale production of carbon nanotubes could not be achieved and impurities have to be removed. To solve these problems more information about formation of carbon nanotubes has to be known. In this study concentration profiles of reactant and byproducts in a cylindrical reactor are investigated during carbon nanotube production. A special probe to collect gas samples along the reactor and samples loops to store the gas samples were designed and constructed. Gas samples were analyzed one by one in GC/MS. Experiments were done with and without catalyst at same experimental conditions. Thus, effects of catalyst on concentration profiles of chemicals were analyzed. To produce carbon nanotubes more acetylene was used compared to amount of acetylene used in pyrolysis. Increasing reaction temperature from 800&deg / C to 875&deg / C caused decomposing more acetylene and producing more carbon nanotubes. It is believed that data accumulation on the reactions involved in the gas phase will lead to large scale production and lower product costs with a large catalyst surface to be produced in the reactor.

Carbon nanotubes (CNTs), allotropes of carbon with a cylindrical nanostructure, are one of the most attractive research subjects for scientists and industry because of their extraordinary chemical, electrical, optical, mechanical and thermal properties, and their wide range of potential application areas. Mainly, there are two types of carbon nanotubes: single-walled carbon nanotubes (SWNTs) and multi-walled carbon nanotubes (MWNTs). The most commonly used methods for carbon nanotube production are arc discharge, laser ablation, and chemical vapor deposition (CVD). In the CVD method, CNTs are produced from thermal decomposition of the carbon-containing molecules on a suitable transition metal catalyst. CVD method enables large scale production of high-quality CNTs with low cost compared to other methods. The growth and morphology of CNTs can be controlled by adjusting the reaction parameters. In this study, Co and Mo impregnated CaCO3 catalysts were synthesized at different Co:Mo weight ratios and calcined at different temperatures. XRD results showed that there was mainly CaCO3 compound in the catalysts calcined at 500&ordm / C whereas the catalysts calcined at 700 and 750 &ordm / C were mainly composed of CaO and Ca(OH)2 compounds. In addition to these, CaMoO4, CoO, CoMoO4 and Mo2C were the other solid phases mainly observed in all catalysts. The production of CNTs was performed by chemical vapor deposition of acetylene at a temperature range of 500-700

The development and advancement of microelectronics technology have been dramatically. The time and cost, for research and optimization of process and equipment, can be saved by using flow simulation. The governing equations of flow field, inside chemical vapor deposition (CVD) reactor, are constructed, dispersed, and solved by grid mesh and numerical method. At present, rapid thermal process (RTP) is becoming more important and popular for thin-film depositing technology. In this thesis, vertical type single wafer RTCVD reactor in poly-silicon thin-film depositing process is analyzed by numerical method. Several operating process parameters, such as: (a) the gap between shower head and wafer surface, (b) gas inlet velocity in shower head, and (c) operating pressure inside chamber of reactor, are considered for discussion and analysis of steady or unsteady phenomenon in three steps of thin-film depositing process, including (¢¹) heating for wafer, (¢º) deposition in steady state, (¢») cooling after deposition etc.. As shown in the results, each operating parameters performs different relations and phenomenon in these steady and unsteady steps: Operating pressure can affect the activity of chemical reaction strongly in unsteady or steady region. Larger gap between wafer and shower head causes less influence by flow effects or buoyancy. And also, radiation heat transfer, which is adopted by RTCVD process, can decrease the influence of some parameters on flow field.

This study investigated the feasibility of glassfiber filter coated with titanium dioxide (TiO2) on removing indoor VOCs using photocatalytic technology, which could further expand the electronic filter¡¦s function . First of all, we coated the titanium dioxide (TiO2) photocatalysts on the glassfiber filter with chemical vapor desposition (CVD) method, then dried it at 120¢J, and calcined it to prepare a nano-sized TiO2 coated filter . Secondly, we collected VOC samples in a printery and analyzed their chemical components. The main components of VOCs (benzene¡Btoluene and acetone) were then conducted in a self-designed laboratory-scaled batch photocatalytic reactor. The decomposition of acetone for different operating parameters, including initial VOC concentration, CVD coating time, and calcination temperature, was further conducted. Besides, a nano-sized photocatalyst indoor air purifier was self-designed for this particular study. The air purifier consists of a set of near-UV light source, a nano-sized photocatalyst glassfiber filter, a stainless shelter, and a circulating fan. The air purifier was tested to ascertain its capability on the removal of indoor VOCs in a well-tight environmental chamber. The testing results indicated the nano-sized photocatalyst glassfiber filter can be used to remove indoor VOCs . In the final stage, a nano-sized TiO2 photocatalyst electronic air cleaner was self-designed for this particular further study in a printery. The air cleaner consists of a set of UV light source, a nano-sized photocatalyst glassfiber filter, a set of electronic filter, carborn filter and a pain coated steel plate shelter. The air cleaner was tested to ascertain its capability on the removal of indoor VOCs in a return air channel of air condition system. The testing results indicated that the nano-sized photocatalyst glassfiber filter can be used to remove indoor VOCs

Chemical vapor deposition technology is often by using in the one of Wafer panel Foundry process, the heat transfer coefficient on the top substrate surface is the very important influence parameter in the manufacturing process. For this reason, the main object of this thesis is apply liquid crystals heat transfer measurement technique to set up a temperature measurement experiment system of transient thermochromatic liquid crystals and application simulating CVD process technique. Furthermore, an experimental is carried out in the present study to investigate the characteristics of heat transfer experiment study analysis resulting from a low speed air jet through the nozzle eccentric disc outlet impinging onto a rectangular acclivitous angles substrate confined in a vertical rectangular chamber. Finally, heat transfer coefficient empirical equations of the three relationship are proposed to Nusselt number correlate the effect of Reynolds number¡BSeparation distances are Ratio of outlet and acclivitous substrate surface¡BAngles of rectangular acclivitous substrate.

To fulfill the potential of carbon nanotube (CNT) as thermal interface material (TIM), the packing density of CNT array needs improvement. In this work, two potential ways to increase the packing density of CNT array are tested. They are liquid precursor(LP)CVD and cycled catalyst deposition method. Although LP-CVD turned out to be no help for packing density increase, it is proved to enhance the CNT growth rate. The packing density of CNT array indeed increases with the cycle number. The thermal conductivity of the CNT array increases with the packing density. This work is believed to be a step closer to the real life application of CNT in electronic packaging industry.