Power converters used in high reliability radiation hardened space applications trail their commercial counterparts in terms of power density and efficiency. This is due to the additional challenges that arise in the design of space rated power converters from the harsh environment they need to operate in, to the limited availability of space qualified components and field demonstrated power converter topologies. New radiation hardened Gallium Nitride (GaN) Field Effect Transistors (FETs) with their inherent radiation tolerance and superior performance over Silicon Power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are a promising alternative to improve power density and performance in space power converters. This thesis presents the considerations and design of a practical implementation of the Phase Shifted Full Bridge DC-DC Isolated converter with synchronous rectification for space applications. Recently released radiation hardened GaN FETs were used in the Full Bridge and synchronous rectifier power stages. A survey outlining the benefits of new radiation hardened GaN FETs for space power applications compared to current radiation hardened power MOSFETs is included. In addition, this work presents the overall design process followed to design the DC-DC converter power stage, as well as a comprehensive power loss analysis. Furthermore, this work includes details to implement a conventional hard-switched Full Bridge DC-DC converter for this application. An efficiency and component stress comparison was performed between the hard-switched Full Bridge design and the Phase Shifted Full Bridge DC-DC converter design. This comparison highlights the benefits of phase shift modulation (PSM) and zero voltage switching (ZVS) for GaN FET applications. Furthermore, different magnetic designs were characterized and compared for efficiency in both converters. The DC-DC converters implemented in this work regulate the output to a nominal 20 V, delivering 500 W from a nominal 100 V DC Bus input. Complete fault analysis and protection circuitry required for a space-qualified implementation is not addressed by this work. / MS / Recently released radiation-hardened Gallium Nitride (GaN) Field Effect Transistors (FETs) offer the opportunity to increase efficiency and power density of space DC-DC power converters. The current state of the art for space DC-DC power conversion trails their commercial counterparts in terms of power density and efficiency. This is mainly due to two factors. The first factor is related to the additional challenges that arise in the design of space rated power converters from the harsh environment they need to operate in, to the limited availability of space qualified components and field demonstrated converter topologies. The second factor lies in producing reliable radiation hardened power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). GaN FETs not only have better electrical performance than power MOSFETs, they have also demonstrated inherent tolerance to radiation. This results in less structural device changes needed to make GaN FETs operate reliably under high radiation compared to their MOSFETs counterparts. This work outlines the design implications of using newly released radiation hardened GaN FETs to implement a fixed frequency isolated Phase Shifted Full Bridge DC-DC converter while strictly abiding to the design constraints found in space-power converter applications. In addition, a one-to-one performance comparison was made between the soft-switched Phase Shift modulated Full Bridge and the conventional hard-switched Full Bridge DC-DC converter. Finally, different magnetic designs were evaluated in the laboratory to assess their impact on converter efficiency.

With the rapid development of microprocessor and semiconductor technology, industry continues to update the requirements for power supplies. For telecommunication and computing system applications, power supplies require increasing current level while the supply voltage keeps decreasing. For example, the Intel's CPU core voltage decreased from 2 volt in 1999 to 1 volt in 2005 while the supply current increased from 20A in 1999 to up to 100A in 2005. As a result, low-voltage high-current high efficiency dc-dc converters with high power-density are demanded for state-of-the-art applications and also the future applications. Half-bridge dc-dc converter with current-doubler rectification is regarded as a good topology that is suitable for high-current low-voltage applications. There are three control schemes for half-bridge dc-dc converters and in order to provide a valid unified analog model for optimal compensator design, the analog state-space modeling and small signal modeling are studied in the dissertation and unified state-space and analog small signal model are derived. In addition, the digital control gains a lot of attentions due to its flexibility and re-programmability. In this dissertation, a unified digital small signal model for half-bridge dc-dc converter with current doubler rectifier is also developed and the digital compensator based on the derived model is implemented and verified by the experiments with the TI DSP chip. In addition, although current doubler rectifier is widely used in industry, the key issue is the current sharing between two inductors. The current imbalance is well studied and solved in non-isolated multi-phase buck converters, yet few discusse this issue in the current doubler rectification topology within academia and industry. This dissertation analyze the current sharing issue in comparison with multi-phase buck and one modified current doubler rectifier topology is proposed to achieve passive current sharing. The performance is evaluated with half bridge dc-dc converter; good current sharing is achieved without additional circuitry. Due to increasing demands for high-efficiency high-power-density low-voltage high current topologies for future applications, the thermal management is challenging. Since the secondary-side conduction loss dominates the overall power loss in low-voltage high-current isolated dc-dc converters, a novel current tripler rectification topology is proposed. Theoretical analysis, comparison and experimental results verify that the proposed rectification technique has good thermal management and well-distributed power dissipation, simplified magnetic design and low copper loss for inductors and transformer. That is due to the fact that the load current is better distributed in three inductors and the rms current in transformer windings is reduced. Another challenge in telecommunication and computing applications is fast transient response of the converter to the increasing slew-rate of load current change. For instance, from Intel's roadmap, it can be observed that the current slew rate of the age regulator has dramatically increased from 25A/uS in 1999 to 400A/us in 2005. One of the solutions to achieve fast transient response is secondary-side control technique to eliminate the delay of optocoupler to increase the system bandwidth. Active-clamp half bridge dc-dc converter with secondary-side control is presented and one industry standard 16th prototype is built and tested; good efficiency and transient response are shown in the experimental section. However, one key issue for implementation of secondary-side control is start-up. A new zero-voltage-switching buck-flyback isolated dc-dc converter with synchronous rectification is proposed, and it is only suitable for start-up circuit for secondary-side controlled converter, but also for house-keeping power supplies and standalone power supplies requiring multi-outputs.