O desenvolvimento da Medicina Nuclear, aliado à evolução dos equipamentos de diagnóstico e terapia, necessita, cada vez mais, da disponibilidade comercial de radioisótopos. Nesse contexto, o IPEN tem buscado atender e abastecer o mercado nacional. Um dos investimentos nesta área foi a aquisição de um ciclotron de 30 MeV, modelo Cyclone-30, que permitiu a produção dos radioisótopos tais como, o 18F, 67Ga, 201Tl e o 123I, sendo este último o foco do presente trabalho. Através de dados de produções rotineiras de 123I via irradiação com prótons em alvo gasoso de Xenônio com enriquecimento superior a 99,8% em 124Xe, foi realizado um estudo para identificar os fatores relevantes que influenciam diretamente o rendimento de obtenção de 123I com altíssimo grau de pureza. Embora a metodologia seja bem conhecida, quando se trata de produção comercial há uma escassez de dados sobre os parâmetros operacionais utilizados. Os parâmetros avaliados foram: pressão do gás 124Xe, intensidade de corrente de feixe de prótons, tempo de irradiação, temperatura de operação do sistema durante a irradiação, tempo de espera para formação de 123I, tempo de aquecimento do porta-alvo para recuperação do 123I formado, temperatura de aquecimento da solução de lavagem e influência do revestimento interno da câmara de irradiação com Ni. Com os resultados obtidos, foi possível alterar as condições operacionais nas produções rotineiras, conduzindo a um aumento de eficiência do processo em torno de 30%. / The development of diagnosis equipment and therapy procedures in nuclear medicine depends on the availability of commercial radioisotopes. IPEN is the most important institution that provides radioisotopes for national market. In order to achieve this function, IPEN had invested in the acquisition of a 30 MeV Cyclone-30 cyclotron to produce mainly 18F, 67Ga, 201Tl and 123I. The 123I production is the aim of the present work. With the 123I routine production data obtained by proton irradiation of Xe targets with an enrichment greater than 99.8%, it was possible to identify the important parameters that have direct influence on the production yield of high purity degree 123I. Even though the methodology for the commercial production of 123I, there are an scarcity of operational parameters data for this task. In this work the evaluated parameters were: 124Xe pressure, proton beam quality, irradiation time, operational temperature of the irradiation system under irradiation, waiting time to obtain 123I, temperature of washing solution and the impact of the internal Ni coating in the target. With the obtained results it was possible to modify the operational conditions for routine production and increasing the efficiency in about 30%.

Neste trabalho estudamos os efeitos polarônicos sobre um gás de elétrons quase bidimensional presente em heteroestruturas semicondutoras (heterojunções e poços quânticos de GaAs-AlGaAs) sob a ação de um campo magnético uniforme aplicado na direção perpendicular a interface, através de teoria de perturbação de segunda ordem. Calculamos a massa ciclotrônica considerando a interação elétron-fonon LO e os efeitos de blindagem e não parabolicidade da banda de condução do GaAs. Os resultados obtidos são comparados com recentes dados experimentais de ressonância ciclotronica e apresentam ótima concordância. Estudamos também a energia de ligação do estado fundamental de uma impureza hidrogenóide localizada no interior de um fio quântico retangular de GaAs envolvido por AlGaAs, como função das dimensões do fio para varias alturas das barreiras de variacional, usando várias formas para a função de onda tentativa do sistema. Consideramos também a contribuição polarônica a energia de ligação. Comparamos nossos resultados com recentes cálculos da energia de ligação, efetuados por outros autores. / In this work we study the polaronic effects on the two dimensional electron gas present in semiconductor heteroestructures (GaAs-AlGaAs heterojunctions and quantum wells) when a uniform magnetic field is applied perpendicular to the interface, using second order perturbation theory. By taking into account the effect of nonparabolicity and screening of the electron-fonon LO interaction the calculated effective mass is compared to the recent experimental date. Good agreement is found with available date. The binding energies of a hydrogenic impurity located in quantum well wires of GaAs surrounded by AlGaAs are calculated as a functions of the size of the wire for several values of the heights of the potential barriers and diferent positions of the impurity inside the wire. We follow a variational approach choosing several trial wave functions for the ground state. The polaronic contribution to the binding energy is considered. We compare our results with those previously obtained by other authors.

A espectroscopia de ressonância ciclotrônica de íons foi usada para estudar reações de íons alcóxido, hidróxido, fluoreto, íon-radical óxido, acetileto e amideto com formiatos de alquila; o último íon reage também com N,N-dimetilformamida. Em todos os casos ocorre uma reação de descarbonilação, dando origem a um íon solvatado, que as evidências experimentais indicam ser unido por ponte de hidrogênio. Deslocamentos nucleófilos de grupos ligados ao esqueleto formílico podem ocorrer em casos adequados e em casos especiais ocorre ainda a formação de íons formiato. Os íons solvatados formados a partir de íons fluoreto e alcóxido com formiatos de alquila reagem com álcoois, podendo-se desta meneira estabelecer uma ordem de capacidade de solvatação para os álcoois alifáticos simples. A ordem estabelecida foi: CH3OH < C2H5OH < iso-C3H7OH < tert-C4H9OH. Foram determinadas constantes relativas de velocidade para as reações de vários íons negativos com formiatos de alquila, em sistemas onde se forma mais de um produto. Nos casos mais favoráveis (reações de íons fluoreto) foram calculadas constantes de velocidade absolutas para os vários canais de reação. / Ion-cyclotron resonance spectroscopy has been used to study the reactions between alkoxide, hydroxide, fluoride, O-, acetylide and amide ions with alkyl formates; the last ion reacts also with N,N-dimethylformamide. In all systems a decarbonylation occurs, giving rise to a solvated product ion, held by a hydrogen bond, as evidenced experimentally. Nucleophilic displacement of the formyl group substituents may occur in favorable cases and in a few particular systems the formation of formate ion is observed. The solvated ions formed through the reaction of fluoride or alkoxide ions with alkyl formates can react further with alcohols to establish the intrinsic clustering ability of simple aliphatic alcohols. The order of solvating ability is shown to follow the order CH3OH < C2H5OH < iso-C3H7OH < tert-C4H9OH. In systems where parallel reactions occur, relative rate constants were determined; in the most favorable cases (reactions of fluoride ions), absolute rate constants for the various reaction channels were calculated.

O desenvolvimento da Medicina Nuclear, aliado à evolução dos equipamentos de diagnóstico e terapia, necessita, cada vez mais, da disponibilidade comercial de radioisótopos. Nesse contexto, o IPEN tem buscado atender e abastecer o mercado nacional. Um dos investimentos nesta área foi a aquisição de um ciclotron de 30 MeV, modelo Cyclone-30, que permitiu a produção dos radioisótopos tais como, o 18F, 67Ga, 201Tl e o 123I, sendo este último o foco do presente trabalho. Através de dados de produções rotineiras de 123I via irradiação com prótons em alvo gasoso de Xenônio com enriquecimento superior a 99,8% em 124Xe, foi realizado um estudo para identificar os fatores relevantes que influenciam diretamente o rendimento de obtenção de 123I com altíssimo grau de pureza. Embora a metodologia seja bem conhecida, quando se trata de produção comercial há uma escassez de dados sobre os parâmetros operacionais utilizados. Os parâmetros avaliados foram: pressão do gás 124Xe, intensidade de corrente de feixe de prótons, tempo de irradiação, temperatura de operação do sistema durante a irradiação, tempo de espera para formação de 123I, tempo de aquecimento do porta-alvo para recuperação do 123I formado, temperatura de aquecimento da solução de lavagem e influência do revestimento interno da câmara de irradiação com Ni. Com os resultados obtidos, foi possível alterar as condições operacionais nas produções rotineiras, conduzindo a um aumento de eficiência do processo em torno de 30%. / The development of diagnosis equipment and therapy procedures in nuclear medicine depends on the availability of commercial radioisotopes. IPEN is the most important institution that provides radioisotopes for national market. In order to achieve this function, IPEN had invested in the acquisition of a 30 MeV Cyclone-30 cyclotron to produce mainly 18F, 67Ga, 201Tl and 123I. The 123I production is the aim of the present work. With the 123I routine production data obtained by proton irradiation of Xe targets with an enrichment greater than 99.8%, it was possible to identify the important parameters that have direct influence on the production yield of high purity degree 123I. Even though the methodology for the commercial production of 123I, there are an scarcity of operational parameters data for this task. In this work the evaluated parameters were: 124Xe pressure, proton beam quality, irradiation time, operational temperature of the irradiation system under irradiation, waiting time to obtain 123I, temperature of washing solution and the impact of the internal Ni coating in the target. With the obtained results it was possible to modify the operational conditions for routine production and increasing the efficiency in about 30%.

A espectroscopia de ressonância ciclotrônica de íons foi usada para estudar reações de íons alcóxido, hidróxido, fluoreto, íon-radical óxido, acetileto e amideto com formiatos de alquila; o último íon reage também com N,N-dimetilformamida. Em todos os casos ocorre uma reação de descarbonilação, dando origem a um íon solvatado, que as evidências experimentais indicam ser unido por ponte de hidrogênio. Deslocamentos nucleófilos de grupos ligados ao esqueleto formílico podem ocorrer em casos adequados e em casos especiais ocorre ainda a formação de íons formiato. Os íons solvatados formados a partir de íons fluoreto e alcóxido com formiatos de alquila reagem com álcoois, podendo-se desta meneira estabelecer uma ordem de capacidade de solvatação para os álcoois alifáticos simples. A ordem estabelecida foi: CH3OH < C2H5OH < iso-C3H7OH < tert-C4H9OH. Foram determinadas constantes relativas de velocidade para as reações de vários íons negativos com formiatos de alquila, em sistemas onde se forma mais de um produto. Nos casos mais favoráveis (reações de íons fluoreto) foram calculadas constantes de velocidade absolutas para os vários canais de reação. / Ion-cyclotron resonance spectroscopy has been used to study the reactions between alkoxide, hydroxide, fluoride, O-, acetylide and amide ions with alkyl formates; the last ion reacts also with N,N-dimethylformamide. In all systems a decarbonylation occurs, giving rise to a solvated product ion, held by a hydrogen bond, as evidenced experimentally. Nucleophilic displacement of the formyl group substituents may occur in favorable cases and in a few particular systems the formation of formate ion is observed. The solvated ions formed through the reaction of fluoride or alkoxide ions with alkyl formates can react further with alcohols to establish the intrinsic clustering ability of simple aliphatic alcohols. The order of solvating ability is shown to follow the order CH3OH < C2H5OH < iso-C3H7OH < tert-C4H9OH. In systems where parallel reactions occur, relative rate constants were determined; in the most favorable cases (reactions of fluoride ions), absolute rate constants for the various reaction channels were calculated.

The broad theme of the present research investigation is Ion Assisted Deposition of thin films and its effect on the properties of thin films. Though this activity has been of interest to researchers for more than a decade, the development of different types of ion sources with control over the ion flux and energy, makes it a current topic of interest. Ion assisted deposition was successful in depositing thin films of many material with desired qualities, however, there are certain class of materials whose deposition has been rather difficult. This has mainly been attributed to higher energies and low ion flux of conventional ion sources. The advent of ECR ion sources for thin film deposition has given impetus to the deposition of such materials. This is due to the low energy high-density plasma generated in this type of sources. Hitherto, these sources were widely used in PECVD techniques and only recently the importance of ECR sources in PVD techniques has been realized. This thesis is on the development of ECR plasma source for ion assisted deposition of thin films using PVD techniques. This thesis is organized into six chapters. The first chapter gives an introduction on the ion assisted growth of thin films and the importance of ECR plasma. A detailed discussion on various aspects of ECR sources has been included. The design details on the development of ECR source have been discussed in the second chapter. The performance of ECR source as analyzed by the Langmuir probe are also discussed. Variation of plasma parameters like ion density, electron temperature, plasma potential and floating potential as a function of pressure and microwave power have been studied using Langmuir probe analysis. An ion density of the order of 1011/cm3 was measured at a distance of 8 cm from the plasma source with a microwave power of 400 watts. This was comparable to the ion density reported in downstream plasma of ECR sources. The behavior of plasma parameters with variation in microwave power and pressure was explained on the basis of microwave transmission above critical ion density and the microwave power absorption. The uniformity of the plasma parameters at the substrate position (29 cm from the ECR source) was found to be ± 2% over a diameter of 12 cm, which makes the ion source suitable for ion assisted deposition. The third chapter deals with the simulation and experimental study of the ECR sputtering process. ECR sputter type sources are equipped with cylindrical targets. The sputtered flux distribution on the substrate depends on target geometry, sputtering pressure and target-substrate distance. The effect of cylindrical geometry on the distribution of sputtered flux has been simulated by Monte Carlo methods. It is found that the sputtered flux distribution at different pressures and target-substrate distances in ECR sputter type source differs from the conventional glow discharge sputtering system equipped with planar targets. The simulated results are compared with the experimental results. The simulated data agree very well with the experimental data. The deposition and characterization of the TiN thin films for diffusion barrier applications in copper metallization have been discussed in the fourth chapter. Titanium nitride films are prepared by ECR sputtering. The effect of high density ion bombardment on the morphology, orientation and resistivity of the films was studied. It was observed that films with atomic smoothness could be prepared by ECR sputtering. Also the high density ion bombardment has been found to be effective for the film growth in (100) orientation. The behavior of TiN films deposited by this method as a diffusion barrier in copper metallization has been investigated. The resistivity measurements and RBS depth profile studies showed that up to 700°C there is no diffusion of copper into silicon. This shows that ECR sputtered TiN can be used as an effective diffusion barrier in copper metallization. The fifth chapter contains investigations on the ECR assisted growth of silicon nitride films. The films are characterized for composition, morphology and chemical bonding using AES, RBS, AFM, XPS and FTIR. AFM studies revealed that ion bombardment results in the reduction of surface roughness, which indicates dense film growth. The effect of ion assistance on the optical and electrical properties is studied in detail. Films prepared with microwave power ranging from 100 to 200 watts are having bandgap and refractive index of 4.9 eV and 1.92 respectively. Interface state density of silicon nitride films prepared in the above mentioned range was found to be 5x10 10 eVcm2. These films exhibited a resistivity of 10 13 Ω, cm and critical field of 4 MV/cm. The electrical conductivity in these films has been explained on the basis of Poole and Frenkel conduction. The low value of interface state density, higher resistivity, and critical field show that good quality SiN4 films can be deposited with low energy high density ECR plasma. A detailed summary of this research investigation has been discussed in the last chapter. The thesis is concluded with a discussion on the need of focused ECR source to establish ECR assisted deposition as a versatile technique for the growth of thin films.

No description available.

Advances in science and technology during the past decade have greatly enhanced the level of the structural investigation of macromolecules – peptides and proteins. Biological mass spectrometry has become one of the most precise and sensitive techniques in peptide and protein analysis. However, increasing demands of biotechnological applications require further progress to be made. In the present thesis the development and improvement of peptide and protein characterization methods and techniques based on ion-electron and ion-photon reactions in electrospray ionization Fourier transform ion cyclotron resonance mass spectrometry are described. The focus is on the development of the electron capture dissociation method, recently discovered by the group of professor McLafferty, into a high rate, efficient tandem mass spectrometrical technique. The rate and reliability of the electron capture dissociation technique were greatly increased by implementation of low-energy pencil electron beam injection systems based on indirectly heated dispenser cathodes. Further implementation of a hollow electron beam injection system combined, in a single experimental configuration, two rapid fragmentation techniques, high rate electron capture dissociation and infrared multiphoton dissociation. Simultaneous and consecutive irradiations of trapped ions with electrons and photons extended the possibilities for ion activation/dissociation reaction schemes and lead to improved peptide and protein characterization. Using these improvements, high rate electron capture dissociation was employed in time-limited experiments, such as liquid chromatography–tandem mass spectrometry and capillary electrophoresis-tandem mass spectrometry. The analytical applications of the developed techniques have been demonstrated in top-down sequencing of peptides and proteins up to 29 kDa, improved sequencing of peptides with multiple disulfide bridges and secondary fragmentation (w-ion formation), as well as extended characterization of peptide mixtures separated by liquid chromatography and capillary electrophoresis. For instance, the dissociation of peptides resulting from enzymatic digestion of proteins provided complementary structural information on peptides and proteins, as well as their post-translational modifications.

No description available.

Neste trabalho estudamos os efeitos polarônicos sobre um gás de elétrons quase bidimensional presente em heteroestruturas semicondutoras (heterojunções e poços quânticos de GaAs-AlGaAs) sob a ação de um campo magnético uniforme aplicado na direção perpendicular a interface, através de teoria de perturbação de segunda ordem. Calculamos a massa ciclotrônica considerando a interação elétron-fonon LO e os efeitos de blindagem e não parabolicidade da banda de condução do GaAs. Os resultados obtidos são comparados com recentes dados experimentais de ressonância ciclotronica e apresentam ótima concordância. Estudamos também a energia de ligação do estado fundamental de uma impureza hidrogenóide localizada no interior de um fio quântico retangular de GaAs envolvido por AlGaAs, como função das dimensões do fio para varias alturas das barreiras de variacional, usando várias formas para a função de onda tentativa do sistema. Consideramos também a contribuição polarônica a energia de ligação. Comparamos nossos resultados com recentes cálculos da energia de ligação, efetuados por outros autores. / In this work we study the polaronic effects on the two dimensional electron gas present in semiconductor heteroestructures (GaAs-AlGaAs heterojunctions and quantum wells) when a uniform magnetic field is applied perpendicular to the interface, using second order perturbation theory. By taking into account the effect of nonparabolicity and screening of the electron-fonon LO interaction the calculated effective mass is compared to the recent experimental date. Good agreement is found with available date. The binding energies of a hydrogenic impurity located in quantum well wires of GaAs surrounded by AlGaAs are calculated as a functions of the size of the wire for several values of the heights of the potential barriers and diferent positions of the impurity inside the wire. We follow a variational approach choosing several trial wave functions for the ground state. The polaronic contribution to the binding energy is considered. We compare our results with those previously obtained by other authors.