Los moduladores son elementos claves para la transmisión de la señal y el procesamiento de la información. Las técnicas de fabricación avanzadas "complementary metal-oxide semiconductor" (CMOS) permiten reducir drásticamente las dimensiones de estos dispositivos de interés para la implementación a gran escala en un chip de silicito a bajo coste. El trabajo realizado en esta tesis se centra en el diseño, la fabricación y la caracterización de estructuras de onda lenta con el objetivo de realizar moduladores compactos y eficientes integrados en un chip de silicio. El trabajo se divide en cuatro capítulos y un capítulo de conclusión y perspectivas. El capítulo uno introduce los fundamentos de física del estado sólido y de los mecanismos básicos de propagación guiada de la luz por reflexión total interna. El capítulo dos presenta los parámetros importantes de los moduladroes electro-ópticos así como un trabajo de recopilación de todos los mecanismos físicos que pueden ser empleados para modular la luz en silicio. Además, se presenta el estado del arte de los moduladores basados en silicio. El capítulo tres presenta el diseño , fabricación y caracterización de un modulador electro-óptico en silicio compacto y eficiente basado en el efecto de onda lenta en una estructura periódica unidimensional integrada, cuya geometría, similar a la de una red de Bragg, permite reducir la velocidad de grupo de un paquetes de ondas. Dicho efecto, se emplea para incrementar la interacción luz-materia y por lo tanto la eficiencia del modulador electro-óptico. El capítulo cuatro demuestra experimentalmente que dicha guía unidimensional periódica puede ser mejorada a fin de conseguir que el efecto de baja velocidad de grupo suceda en un rango mayor de longitudes de onda para posibles aplicaciones como la multiplexación por división de longitudinal de onda. En el capítulo cinco, se proporcionan conclusiones y perspectivas sobre el trabajo realizado. / Brimont ., ACJ. (2011). Towards Compact and High Speed Silicon Modulators [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/14345

Silicon photonics is one of the most exciting and fastest growing photonic technologies in recent years. The salient feature of this technology is its compatibility with the mature silicon IC manufacturing based on complementary metal-oxide semiconductor (CMOS) processes widely used in microelectronic industry. Another motivation is the availability of high-quality silicon-on-insulator (SOI) planar waveguide circuits that offer strong optical confinement due to the high index contrast between silicon (n=3.45) and SiO2 (n=1.45). This opens up miniaturization and very large scale integration of photonic devices allowing photonic integrated circuits for a wide range of applications and markets, from optical telecommunications to bio-photonic devices or precise fibre sensors. Optical modulators are key building-blocks for high speed signal transmission and information processing in any photonic interconnection solution. The work developed in this thesis, as part of the objectives of the European project HELIOS in which it is framed, is essentially focused on realizing compact and efficient modulators integrated on silicon chips. The thesis consists of three main chapters as well as the concluding section on the work accomplished. Chapter one is aimed at giving a general description of the benefits of using silicon photonics, showing its challenges and opportunities as well as at giving a deeply overview of all issues related to the electro-optic modulation. Chapter two is devoted to develop silicon modulators with high features for digital applications. Specifically, new optical structures different to the conventional ones are presented with the aim of enhancing the modulation performance or at least several critical parameters in the modulation. Chapter three is dedicated to the analog applications. The concept of microwave photonics is described as well as different researches carried out in the analog scope for application in the field of integrated microwave photonics, all of them using CMOS-compatible electro-optic silicon modulators which validate the potential of silicon photonics as a promising approach for enabling the development of integrated microwave photonics applications. Finally, conclusions on the work realized are provided in Chapter 4. / La fotónica de silicio es una de las tecnologías fotónicas que está experimentando un crecimiento más excitante y rápido en los últimos años. La característica más destacada de esta tecnología es su compatibilidad con las maduras técnicas de fabricación de circuitos integrados de silicio basadas en los procesos ¿complementary metal-oxide semiconductor¿ (CMOS) ampliamente utilizados en la industria microelectrónica. Otra motivación es la disponibilidad de circuitos de guía de ondas planas de silicio sobre aislante (SOI) de alta calidad que ofrecen un fuerte confinamiento óptico debido al alto contraste índices entre el silicio (n=3,45) y el SiO2 (n = 1,45). Esto abre las puertas a la miniaturización y a la integración a gran escala de dispositivos fotónicos lo que resulta en circuitos fotónicos integrados para una amplia gama de aplicaciones y mercados, desde telecomunicaciones ópticas a dispositivos bio-fotónicos o sensores de fibra precisos. Los moduladores ópticos son elementos básicos fundamentales para la transmisión de señales a alta velocidad y el procesado de información en cualquier solución de interconexión fotónica. El trabajo desarrollado en esta tesis, como parte del los objetivos del proyecto Europeo HELIOS en el que está enmarcada, se centra fundamentalmente en realizar moduladores compactos y eficientes, integrados en chips de silicio. La tesis consiste en 3 capítulos principales así como una sección de conclusiones del trabajo conseguido. El capítulo uno está destinado a dar una descripción general de los beneficios del uso de la fotónica de silicio, mostrando sus retos y oportunidades, así como a dar una visión profunda de todos los aspectos relacionados con la modulación electro-óptica. El capítulo dos está dedicado a desarrollar moduladores de silicio de altas prestaciones para aplicaciones digitales. Específicamente, se presentan nuevas estructuras ópticas diferentes a las convencionales con el objetivo de mejorar el rendimiento de la modulación o al menos algunos parámetros críticos en la modulación. El tercer capítulo se dedica a las aplicaciones analógicas. Se describe el concepto de la fotónica de microondas, así como diferentes investigaciones llevadas a cabo en el ámbito analógico para su aplicación en el campo de la fotónica integrada de microondas, todas ellas usando moduladores electro-ópticos de silicio compatibles con los procesos de fabricación CMOS, lo que valida el potencial de la fotónica de silicio como un prometedor enfoque para permitir el desarrollo de aplicaciones de la fotónica integrada de microondas. Por último, las conclusiones sobre el trabajo realizado se proporcionan en el Capítulo 4. / Gutiérrez Campo, AM. (2013). Development of integrated silicon photonics modulation devices for digital and analog applications [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/33330

With a growing demand in industry for cost effective, increased data handling capabilities great attention has been paid to the study of various polymer systems for use in optical telecommunications. Inorganic crystals, currently used in such systems, have high performance, but are more expensive and less obtainable than organic materials. Recent advances in techniques for developing highly efficient and inexpensive organic polymeric electro-optic (EO) devices compatible with current state-of-the-art electronics have created an interest in the commercialization of such electro-optic devices. In light of the many advantages of utilizing organic materials for electro-optic applications, numerous methods have been developed to produce nonlinear optically (NLO)-active polymeric films for such purposes. Ionic self-assembled multilayer (ISAM) films are a recently developed class of materials that allows detailed structural and thickness control at the molecular level, combined with ease of manufacturing and low cost. However, the layer-by-layer deposition technique utilized for this method currently requires lengthy processing times that challenge the feasibility of fabricating a thick film suitable for EO modulator device fabrication. This study focuses on addressing the influence of several pertinent processing variables affecting these challenges for application to electro-optic device fabrication. This study investigated (1) the effect of forced convection, varying deposition time and varying dye concentration on the properties of PAH/Procion Brown films fabricated via the hybrid reactive deposition scheme, (2) the automation and optimization of the fabrication of thick NLO active films and (3) the use of the hybrid covalent-electrostatic deposition scheme to fabricate a polymeric waveguide device with an electro-optic coefficient comparable to that of lithium niobate (LiNbO₃). At fixed deposition time and concentration conditions, the presence of convection had little demonstrated effect on films with deposition times shorter than 2 minutes. For the 5 minute case, the presence of convection correlated with a ~45% increase in Ï (2)zzz values values and a 25% increase in absorbance per bilayer. At a constant dye concentration of 5 mg/ml, the deposition time had little effect on SHG for deposition times less than two minutes. In the presence of convection, the increase in deposition time from 2 minutes to 5 minutes showed a 57% increase in Ï (2)zzz values and a 30% increase in absorbance per bilayer. For a deposition time of 2 minutes in the presence of convection, the dye solution concentration was successfully reduced 5-fold (from 5 mg/ml to 1 mg/ml) with less than a 5% difference in Ï (2)zzz values, less than a 15% decrease in absorbance per bilayer and no detriment to film quality. These results strongly indicate that the deposition conditions remain well outside of the transport-limited regime at a dye concentration of 1 mg/ml. Rather, the surface reaction rate apparently is controlling. Depositing slides at an elevated temperature (~35°C), had an undetermined effect on Ï (2)zzz values, but showed a 15% increase in absorbance per bilayer. An automatic dipper was programmed to replicate the current manual deposition method to fabricate a film suitable for EO modulator devices. Utilizing the optimal conditions for the processing variables, an optically-homogeneous, 100 nm-thick film was fabricated utilizing the automated process, yielding a Ï (2)zzz values~ 23 x 10⁻⁹ esu. A three-layer coplanar electro-optic device was fabricated utilizing the hybrid reactive deposition method. For this device, the presence of added salt was found to increase the electro-optic coefficient r33 by a factor of 3 compared to its value when made with no added salt. The electro-optic coefficient of the added salt case was found to be about 1/2 that of lithium niobate (LiNbO3). / Master of Science

Silicon photonics, with optical I/O chipsets made in high-volume commercial CMOS foundries, are well-suited to solve interconnection challenges in scaling up next-generation high-performance processors (XPUs) for AI, machine learning, and high-performance computing. Silicon microring modulators and resonators with high quality factors are essential for electronic-photonic integrated circuits. However, the current silicon carrier-plasma-effect-based device platform has limitations in modulator sensitivity, tuning power, and optical loss. These limitations may affect its ability to support interconnect scaling to keep up with processor progress. This thesis presents research on new efficient silicon modulators and electronic-photonic integrated transmitters in a CMOS platform while addressing additional performance metrics such as device footprint, bandwidth, and modulation depth. The work demonstrates cryogenic optical data output from a superconducting Josephson junction (JJ) based circuit chip operating at 4K temperature, an interface requiring high energy efficiency per bit. The demonstration involves a pre-amplified silicon ring modulator operating at cryogenic temperature with record shift efficiency. The presented improvements in the energy efficiency of silicon photonic links could enable advancements in microwave photonic signal processing for 5G/6G wireless communication and microwave remote sensing, as well as new computing technologies such as superconducting processors. A second part of the thesis explores integrating electro-optic materials with a Pockels effect into photonic integrated circuit platforms, aiming to increase the shift efficiency or reduce the loss of ring modulators relative to conventional rings that rely on the silicon carrier plasma effect. Initially, electro-optic (EO) polymers are incorporated into two 45 nm CMOS foundry platforms, with monolithic electronic-photonic integration, to explore the concept of integrating materials post-foundry through the substrate from the back side. Initial results demonstrate the feasibility of this concept, providing a new method to introduce exotic materials into CMOS while preserving the integrity of electronic layers. Then, we successfully integrated a newly discovered liquid crystal material, ferroelectric nematic liquid crystal (FNLC), into a silicon photonics platform. Unlike EO polymers, FNLCs can provide modulation without needing a high-temperature poling step. FNLCs enable high-speed Pockels modulation and low-speed, substantial refractive index changes through molecular reorientation, which makes them a potential substitute for the power-hungry and unreliable thermo-optic tuning currently used in silicon photonics. Finally, the thesis demonstrates ultra-high Q silicon resonators and filters in conventional silicon photonics platforms aimed at microwave photonics applications and shows the first demonstration of higher-order bandpass filters with 200-800 MHz wide passbands and low insertion loss. The device-level advancements demonstrated in this thesis collectively address system-level challenges of electronic-photonic integrated circuits and enable various applications involving microwave signal processing. / 2025-09-24T00:00:00Z

No description available.

Fabry-Perot interferometer (FPI) devices are designed based on the electro-optic (EO) activities of nonlinear optical (NLO) polymer materials for tunable optical filters (TOFs) and spatial light modulators (SLMs). The performance of the EO polymer based FPI devices is theoretically modeled with first order approximation on the FPI cavity interface phase dispersion. NLO materials including TCBD coupled hybrid sol-gel, AJL8/amorphous polycarbonate (APC), and AJLS102/APC are incorporated in FPI structures with distributed Bragg reflector mirrors and transparent conducting oxide electrodes for TOFs. High finesse (over 200), low drive voltage (10 dB isolation ratio with 5 V), and fast settling time (about sub-millisecond) are achieved. The physical origin of the large tunabilities is explored and the contributions from EO effect and inverse piezoelectric effect are analyzed. EO polymer SWOHF3ME/APC is employed in FPI devices with simplified structures for SLMs. Modulation beyond megahertz level is achieved with constant modulation ratio from DC frequency to high operation speed. The operation speed can be potentially over gigahertz with improved device and drive circuit design. When the EO polymer based SLM is configured to work at near the resonance band of the NLO material, the spectral tunability is increased due to resonance enhanced EO activity and the SLM performance is significantly improved. The EO polymer based FPI devices can be further optimized and are promising candidates for many optoelectronic applications.

Orientador: Cláudio Kitano / Banca: Ricardo Tokio Higuti / Banca: Luiz Antonio Perezi Marçal / Resumo: Neste trabalho estuda-se a interferometria laser, a qual constitui uma técnica adequada para determinar grandezas físicas com sensibilidade extremamente elevada. Basicamente, no interferômetro óptico, a informação a respeito do dispositivo sob teste é inserida na fase da luz. Utilizando-se o fotodiodo, promove-se a transferência de informação, do domínio óptico para o elétrico, no qual pode ser demodulada usando-se as várias técnicas disponíveis na literatura para detectar sinais modulados em fase. Ênfase é dada a um novo método de demodulação de fase óptica auto-consistente e de grande sensibilidade. Neste método, utiliza- se a modulação dada por uma forma de onda triangular e é baseado na análise do espectro do sinal fotodetectado, sendo capaz de estender a faixa dinâmica de demodulação a valores tão elevados quanto às dos métodos clássicos. Simulações dinâmicas computacionais de interferômetros ópticos são executadas em Simulink juntamente com este método, levando-se em consideração tensões de ruído eletrônico do tipo ruído branco, evidenciando a eficiência do método quando comparados com dados teóricos obtidos em Matlab. A validação experimental do método é realizada com o auxílio de um modulador eletro-óptico de amplitudes, cujas características de fase podem ser previstas analiticamente. Trata-se de um sensor polarimétrico baseado em cristal de Niobato de Lítio, em que a diferença de fase óptica induzida pela tensão elétrica aplicada pode ser determinada através de análise espectral, tal como o novo método descrito neste trabalho. Um interferômetro de Michelson homódino de baixo custo é implementado e a eficiência do novo método de demodulação de fase óptica é avaliada através de testes com atuadores e manipuladores piezoelétricos flextensionais, cujas características de linearidade são conhecidas... (Resumo completo, clicar acesso eletrônico abaixo) / Abstract: In this work, has been done a study the laser interferometer, which is a technique for determining physical quantities with extremely high sensitivity. Basically, in the optical interferometer, information about the device under test modulates the phase of light. Using a photodiode, promotes the transfer of information from the optical domain for the electric, which can be demodulated using the various techniques available in literature to detect modulated signals in phase. Emphasis is given to a new method of phase demodulation of optical self-consistent and high sensitivity. The method employs a linear modulation given by a triangular waveform, and is based on analysis of the spectrum of the photodetected signal, being able to extend the dynamic range of the demodulation values as high as the classical methods. Dynamic computational simulations of optical interferometers are implemented in Simulink with this method, taking into account strains of electronic noise like white noise, indicating the efficiency of the method compared with theoretical data obtained in Matlab workspace. The experimental validation of the method is performed with the aid of an electro- optic amplitude modulator, whose phase characteristics can be analytically predicted. This is a polarimetric sensor based on lithium niobate crystal, in which the optical phase difference induced by electric voltage can be determined by spectral analysis, using new method described in this work. A low cost homodyne Michelson interferometer is implemented and the efficiency of the new method of optical phase demodulation is evaluated by testing with piezoelectric flextensional actuators whose characteristics of linearity are well known.The experimental results agree with theoretical analysis and reveal this method is more efficient than the classical methods / Mestre

The goal of this thesis is to describe development of compact terahertz time-domain spectrometer driven by a mode-locked Ti:Sapphire laser. The terahertz radiation was generated by photoconductive antenna method and detected by electro-optic detection method. In this thesis, several terahertz generation and detection method, working principle of terahertz time-domain spectroscopy and its applications are discussed. We mainly focused on working principle of terahertz time-domain spectroscopy and characterization of detected terahertz power using electro-optic detection method.

Sensing rotation has been an essential topic in navigation and many other applications. Gyroscopes based on propagation of light beams over fixed distances have gained interest with the development of the laser. Since the 1970s, with the development of fiber optics these laser based gyroscopes have developed into compact devices, which can fit in the palm of your hand. In this thesis, we describe and analyze the development of a fiber-optic gyroscope. Fiber optic gyroscopes (also called fiber gyro or FOG) have been under development for different types of applications for more than 30 years all around the world. The physical basis of the fiber gyro is the Sagnac effect that was discovered in the early 1900s and is named after its discoverer. In this work, we first explain the principle of operation of the Sagnac effect and we derive the fundamental formulations in order to have an analytical understanding of the theory. Then, we examine the fiber optic gyro configuration component by component, starting with the laser diode pumped broadband light emitting Erbium-doped superfluorescent source. In addition, the principle of phase modulation, electro-optic phase modulators, fiber optic cables and fiber winding techniques, such as quadrupolar winding is explained within the context of development of the FOG. v The FOG that was assembled was based on circulation and sensing of broadband light centered around 1550nm. The fiber coil was 5km long in order to increase sensitivity in the FOG device. Since single-mode fibers were used steps were taken to ensure successful operation even with polarization dependent errors. The constructed system demonstrated a low sensitivity with a large uncertainty while sensing typical rotation rates. Reasons behind the errors and low sensitivity, as well as improvements that can be made are discussed.

No description available.