The American Institute for Manufacturing Integrated Photonics (AIM Photonics) is focused on developing an end- to- end integrated photonics ecosystem in the U.S., including domestic foundry access, integrated design tools, automated packaging, assembly and test, and workforce development. This paper describes how the institute has been structured to achieve these goals, with an emphasis on advancing the integrated photonics ecosystem. Additionally, it briefly highlights several of the technological development targets that have been identified to provide enabling advances in the manufacture and application of integrated photonics.

The aim of the research presented in this thesis is to develop photonic integrated circuit (PIC) for Radio-over-Fiber (RoF) application. As such, at the beginning of the thesis, a dual-function photonic integrated circuit for microwave photonic applications is proposed. The photonic circuit is arranged to have two separate output ports, and depending upon the RF input signal strength, it provides either tunable millimeter wave carriers by frequency octo-tupling of the RF signal or frequency up-conversion of a microwave signal from the electrical to the optical domain. The circuit exploits the intrinsic relative phases between the ports of multi-mode interference couplers (MMI) to provide all the static optical phases needed, hence drift free. In the middle of thesis, a generalized architecture having N parallel phase modulators driven electrically with a progressive 2π⁄N phase shift is analyzed. The proposed design is justified by computer simulation for N=8 architecture with properly determined optical phase shifts to generate frequency multiplication of an electrical signal. The front- and back-end of the circuit comprises 4×4 MMI couplers enclosing an array of four pairs of phase modulators and 2×2 MMI couplers. The proposed design for frequency multiplication requires no optical or electrical filters; the operation is not limited to carefully adjusted modulation indexes. Later on, a generalized approach for achieving frequency multiplication using two cascades MZM is presented. The proposed design consists of a Mach-Zehnder interferometer with each arm containing a pair of Mach-Zehnder modulators (MZM) in series as a means of optoelectronic frequency multiplication (octo-tupling and quattourviginti-tupling). The circuit requires no electrical or optical filters. There is no requirement to carefully adjust the modulation index to achieve correct operation of the octo-tupler. A comparison is made with an alternative functionally equivalent single-stage parallel MZM circuit discussed herein the thesis. Finally, the thesis describes the generation of the same magnitude but opposite sign high order single optical side band from its output ports by using a RF source. A single stage parallel Mach-Zehnder Modulator (MZM) and a two-stage series parallel MZM architecture is described and their relative merits and demerits discussed. As an illustration of a prospective application it is shown how the circuit may be used to transport radio signals over fibre for wireless access; generating remotely a mm-wave carrier modulated by digital IQ data. A detail calculation of symbol error rate is presented to characterise the system performance. A mathematical analysis is provided to describe the principle of operation for all the proposed design and validated by commercially available industrial standard simulation tool.

In recent years much effort has been carried out to make integrated photonics a widespread technology to be exploited in current optical communication industry. It is hoped by substituting microelectronics by photonic chips and keeping the light carried by optical fibers in light domain for further processing, the cost and speed of communications will be vastly improved. Although this transition is challenging in various aspects, here in this thesis some of these issues are discussed and addressed. In this thesis firstly the limitations of current simulation tools for analysis of wide range of photonic devices is pointed out. Structures based on photonic crystals are taken into consideration at this point which because of finely detailed structures have shown to be challenging to be analyzed by conventional tools. In this regard three different common structures based on photonic crystals in both resonant and non-resonant regimes have been considered: lamellar gratings, metamaterials for Lüneburg lens and Bragg gratings in a LC-DFB laser. For each structure, an analytical method or homogenization approach is proposed which is claimed to be faster for analysis of such components than numerical methods. Comparisons of the results with conventional numerical methods prove accuracies of each approach. Furthermore, fiber-to-chip coupling and polarization management are discussed as other important issues in the field of integrated photonics. Concerning polarization management, stepped waveguide approach will be introduced as the most promising approach for SOI and III-V substrates and designs based on this structure reported in literature are reproduced and inaccuracies are pointed out and corrected accordingly. Also regarding fiber-to-chip coupling, a critical appraisal of the most recent proposed structures for edge coupling will be offered and the results will be reproduced by simulation tools. At the end, based on detailed comparisons, the most encouraging approach with low insertion loss and easy fabrication steps is introduced and novel platform for easy butt coupling single mode fibers to the coupler structure is proposed.

In this thesis, ridge waveguide laser, quantum well intermixing, 1x1 and 2x2 optical switching and ring resonator with multimode-waveguide turning mirror couplers have been investigated. We develop a new design that the perturbation is the minimum when the crossing occurs at the self-image location in a low-loss multimode waveguide. We use a center-fold low-loss multimode waveguide with a single self image at the center. Such waveguides can cross at 90 degrees or 60 degrees at the center with minimal cross talk. One can reflect the incident mode into an intersecting waveguide by introducing an idea reflecting plane. In practice, the reflector is replaced by a plane for total internal reflection with correction for Goos-Hanchen shift. Passive component for£f = 1.41 £gm samples, 1x1 60-degree multimode-waveguide turning mirror, 1x1 90-degree multimode-waveguide turning mirror, 2x2 90-degree multimode-waveguide turning mirror and a single ring resonator with 2x2 multimode-waveguide turning mirror couplers have been fabricated. (1) The multimode-waveguide turning mirror coupler with cross coupling factor (K) of 0.15 is achieved by an etched facet with a correction for Goos-Hanchen shift. (2) The length of the multimode-waveguide turning mirror coupler is only 33% of the length of conventional straight 2x2 MMI coupler with K=0.15. (3) The circumference of the curve waveguide in this ring resonator is decreased by 50%. (4) The characterization of the InP-based single ring resonator incorporating 2x2 multimode-waveguide turning mirror couplers with K= 0.15 has a free spectral range of 82 GHz, a contrast of 4 dB, and a full-width at half-maximum (FWHM) of 0.24 nm for the drop port. (5) This single resonators in In0.53Ga0.47As/In0.53Ga0.26Al0.21As grown by molecular beam epitaxy (MBE), and In0.67Ga0.33As0.6P0.4/In0.71Ga0.29As0.74P0.26 grown by metal organic chemical vapor deposition (MOCVD) have been demonstrated, respectively. We have also developed quantum well intermixing technique for the photonic integration. (1) Argon plasma bombardment followed by rapid thermal annealing for InGaAs/InGaAlAs multiple-quantum-well structures grown by MBE has been found to strongly enhance the intensity of room-temperature photoluminescence signal by more than an order of magnitude. The strength of the photoluminescence signal is found to be dependent on the plasma RF power and bombardment time. The resulting blue shift of the photoluminescence wavelength due to quantum well intermixing is found to be under 15 nm. (2) Process combining inductively-coupled-plasma reactive ion etching (ICP-RIE) and SiO2 sputtering film has been investigated for the InGaAsP and InGaAlAs multi-quantum wells (MQWs). Optimal distance is of 300 nm for InGaAsP, and of 200-nm-thick for InGaAlAs between MQWs and the upper cladding by ICP-RIE and bombardment. The process resulted in a bandgap blue-shift of 90 nm for InGaAsP, and of 60 nm for InGaAlAs. The result is very useful to regrown, the sacrificing layer and to integrate the fabrication.

Photonic signal processing has been considered a promising solution to overcome the inherent bandwidth limitations of its electronic counterparts. Over the last few years, an impressive range of photonic integrated signal processors have been proposed with the technological advances of III-V and silicon photonics, but the signal processors offer limited tunability or reconfigurability, a feature highly needed for the implementation of programmable photonic signal processors. In this thesis, tunable and reconfigurable photonic signal processors are studied. Specifically, a photonic signal processor based on the III-V material system having a single ring resonator structure for temporal integration and Hilbert transformation with a tunable fractional order and tunable operation wavelength is proposed and experimentally demonstrated. The temporal integrator has an integration time of 6331 ps, which is an order of magnitude longer than that provided by the previously reported photonic integrators. The processor can also provide a continuously tunable fractional order and a tunable operation wavelength. To enable general-purpose signal processing, a reconfigurable photonic signal processor based on the III-V material system having a three-coupled ring resonator structure is proposed and experimentally demonstrated. The reconfigurability of the processor is achieved by forward or reverse biasing the semiconductor optical amplifiers (SOAs) in the ring resonators, to change the optical geometry of the processor which allows the processor to perform different photonic signal processing functions including temporal integration, temporal differentiation, and Hilbert transformation. The integration time of the signal processor is measured to be 10.9 ns, which is largely improved compared with the single ring resonator structure due to a higher Q-factor. In addition, 1st, 2nd, and 3rd of temporal integration operations are demonstrated, as well as a continuously tunable order for differentiation and Hilbert transformation. The tuning range of the operation wavelength is 0.22 nm for the processor to perform the three functions. Compared with the III-V material system, the CMOS compatible SOI material system is more cost effective, and it offers a smaller footprint due to the strong refractive index contrast between silicon and silica. Active components such as phase modulators (PMs) can also be implemented. In this thesis, two photonic temporal differentiators having an interferometer structure to achieve active and passive fractional order tuning are proposed and experimentally demonstrated. For both the active and passive temporal differentiators, the fractional order can be tuned from 0 to 1. For the active temporal differentiator, the tuning range of the operation wavelength is 0.74 nm. The use of the actively tunable temporal differentiator to perform high speed coding with a data rate of 16 Gbps is also experimentally demonstrated.

Thesis advisor: Michael J. Naughton / For many centuries, physicists and engineers have explored the creation, manipulation and detection of light. Only within the past century, however, have fabrication techniques advanced to the point where individual photons can be generated, manipulated, and measured. These advances have brought us to the point we are at today, where photonic devices are set to revolutionize the fields of computing, sensing and quantum information, to name a few. Despite the promise of these devices, scientists are still working to fully understand the light-matter interactions that govern their behavior. In this thesis, we uniquely characterize the behavior of certain photonic devices in an effort to understand the underlying physical principles that define them. Of particular interest to us is imaging via near-field scanning optical microscopy (NSOM) of photonic integrated circuit (PIC) elements with high quality factors (Q), such as microring resonators and photonic crystal cavities (PhCs). While these elements are becoming ubiquitous in emerging PIC designs, they have remained difficult to accurately image due to their high sensitivity to small perturbations (i.e. the NSOM probe). We solve this problem by controllably modulating the NSOM tip-sample distance and reducing the size of the probe. Finite element model computer simulations demonstrate that both of these adjustments decrease the tip sample interaction. We then apply this knowledge to generate first of their kind 50 nm resolution NSOM images of high Q resonant PIC devices. Importantly, aside from being accurate, the proposed NSOM technique is also facile and non-destructive. In addition to local field exploration of PIC elements, we explore non-classical optical transmission through sub-wavelength apertures in metallic films. We demonstrate that these interesting features arise from photonic wave interference. / Thesis (PhD) — Boston College, 2024. / Submitted to: Boston College. Graduate School of Arts and Sciences. / Discipline: Physics.

La réalisation d’un système holographique 3D embarqué dans un véhicule nécessite le développement d’une structure d’éclairage surfacique à géométrie planaire pour générer un faisceau cohérent, directionnel et uniforme. Ce type de système a été jusque là réalisé à base de composants optiques classiques comme des lentilles et des miroirs. L’objectif de cette thèse est de proposer une solution plus compacte grâce à l’utilisation des (nano-) technologies d’intégration pour réaliser une émission cohérente, directionnelle et uniforme sur une grande surface à 633 nm en remplaçant les composants optiques volumineux par un circuit intégré photonique.Nous présentons d’abord de manière générale les applications des composants optiques et photoniques dans le domaine automobile, puis la structure planaire intégrée que nous visons pour l’éclairage du système holographique. Nous montrons ensuite l’intérêt du développement de circuits photoniques à base de guides de nitrure de silicium pour le fonctionnement dans le domaine du visible, comme requis pour la présente application. Les travaux réalisés sur les guides d’onde en Si₃N₄ pour la propagation de la lumière à 633 nm sont alors détaillés. Dans un premier temps, nous introduisons les méthodes théoriques pour analyser les modes guidés et montrons les résultats de calcul des indices des modes 1D et 2D pour dimensionner un guide rectangulaire monomode. Enfin, nous détaillons l’étude théorique et de simulation pour définir certains composants intégrés du circuit visé, comme le diviseur 1 × N de faisceau et les guides d’onde courbes. Nous présentons alors les travaux de fabrication des guides d’ondes Si₃N₄ encapsulés dans la silice, précédemment conçus, et qui présentent une dimension autour de 250 nm × 300 nm. Nous montrons les principales étapes de fabrication en salle blanche, comprenant le dépôt des diélectriques à l’aide de la PECVD, la lithographie assistée par faisceau d’électron (EBL) et la gravure ionique réactive (RIE). Les résultats de fabrication sont évalués et analysés afin d’optimiser le procédé de fabrication. Finalement, nous présentons le banc de caractérisation des guides d’onde et les résultats des pertes optiques mesurées. Le dernier chapitre est dédié à l’étude du couplage d’un mode photonique guidé à un mode plasmonique dans un système de guides d’onde, qui consiste en une chaine de nanoparticules métalliques en Au ou en Ag déposée sur le guide d’onde rectangulaire Si₃N₄. L’état de l’art et l’étude théorique sont d’abord présentés, puis nous montrons les résultats de simulation numérique de l’efficacité de couplage en fonction des tailles des nanoparticules et de la longueur d’onde dans ce système de guides d’onde couplés. / An auto-embedded 3D holographic system requires the development of a surface lighting integrateddevice to generate a coherent, directional and uniform lighting beam. Up to now, the realization of this type ofsystem is based on the conventional optical components such as lenses and mirrors. The objective of this thesis isto propose an ultra-compact solution by using the nanotechnologies, in order to realize coherent, directional and uniform light emitting at 633 nm on a large surface in replacing the bulky optical components by a photonic integrated circuit (PIC). In the beginning of the thesis, we present the automotive applications of optics and photonics, and then introduce to the integrated planar structure, which is expected to illuminate the holographic system. We present then our interest of developing silicon nitride waveguides-based PICs, which can be operated in the visible range, as required for the mentioned application. The realized research work on the Si₃N₄ waveguides for the light propagation at 633 nm are then detailed. At first, we introduce the theoretical methods for the analysis of the guided modes and present the calculated indexes of the 1D and 2D modes, which are used to design the single-mode rectangular waveguide. At last, we present exhaustively our theoretical study and simulation work to define some targeted PICs, as the 1 × N beam splitter and the bent waveguides. Then weintroduce the fabrication of the predetermined SiO₂ cladded Si₃N₄ waveguide samples, which have a cross-section size about 250 nm × 300 nm. We present main processes of the fabrication in cleanroom, including the deposition of the dielectric layers by using PECVD, the electron beam lithography (EBL) and the reactive ionicetching (RIE). The fabrication of waveguides has been evaluated and analyzed, in order to optimize the fabrication process. Finally, we present the waveguide’s characterization set-up and the measurement results ofthe optical losses. The last chapter of the thesis is dedicated to the study of the coupling effect from a guidedphotonic mode to a plasmonic mode supported by a guiding structure, which consists of a metallic nanoparticle(Au or Ag) chain deposited on top of the Si₃N₄ rectangular waveguide. The state of the art and the theoretical study are firstly introduced. Then we present the numerical simulation results of the coupling efficiency as a function of nanoparticle’s sizes and operation wavelength in this photonic-plasmonic coupled waveguide system.

La méta-optique non linéaire tout diélectrique suscite un vif intérêt, grâce à la faisabilité de nanostructures à contraste élevé et indice de réfraction disponible avec la lithographie à semi-conducteurs. Alors que des effets nonlinéaires au troisième ordre ont été rapportés dans les nanoantennes silicium sur isolant, la plate-forme AlGaAs-sur-isolant a récemment permis la démonstration de la génération de la seconde harmonique, dû à la noncentrosymétrie de ce matériel. Cette thèse illustre notre activité récente sur les nanoantennes non linéaires AlGaAs-sur-AlOx, où AlOx est obtenu par attaque chimique sélective par voie humide d'une couche épitaxiale d'AlGaAs riche en aluminium d'une épaisseur de quelques micromètres. Un tel substrat à faible indice de réfraction permet de découpler efficacement les modes nanoantenna de la tranche de GaAs (100) sous-jacent. La thèse présente d'abord les méthodes numériques, expérimentales et technologiques utilisées. Une analyse des résultats obtenus dans la génération de signaux non linéaires dans des nanoantennes simples et dans des structures complexes est ensuite présentée. Tous nos résultats expérimentaux ouvrent la voie à la génération et à la manipulation de signaux non linéaires à l'échelle nanométrique et pointent vers des applications telles que l'holographie non linéaire, la goniométrie sans fond et la vision nocturne. / All-dielectric nonlinear meta-optics is attracting a great deal of interest thanks to the feasibility of high refractive-index contrast nanostructures available with semiconductor lithography. While third order nonlinear effects have been reported in silicon-on-insulator nanoantennas, the AlGaAs-on-insulator platform has recently enabled the demonstration of second harmonic generation, owing to the non-centrosymmetry of this material. This PhD thesis illustrates our recent activity on AlGaAs-on-AlOx nonlinear nanoantennas, where AlOx is obtained from selective wet etching of micrometer-thick aluminium-rich AlGaAs epitaxial layer. Such a low refractive index substrate allows to effectively decouple the nanoantenna modes from the underlying GaAs (100) wafer. The thesis first introduces the numerical, experimental and technological methods employed. Afterwards, a review of the results obtained in nonlinear signal generation in single nanoantennas and in complex structures is given. All our experimental results pave the way towards nonlinear signal generation and manipulation at the nanoscale, and point towards applications such as nonlinear holography, background-free goniometry and night vision.

<p>The integration of planar on-chip light sources is a bottleneck in the implementation of portable planar chip-scale photonic integrated sensing systems, integrated optical interconnects, and optical signal processing systems on platforms such as Silicon (Si) and Si-CMOS integrated circuits. A III/V on-chip laser source integrated onto Si needs to use standard semiconductor fabrication techniques, operate at low power, and enable efficient coupling to other devices on the Si platform.</p><p>In this thesis, thin film strain compensated InGaAs/GaAs single quantum well (SQW) separate confinement heterostructure (SCH) edge emitting lasers (EELs) have been implemented with patterning on both sides of the thin film laser under either growth or host substrate support, with the devices metal/metal bonded to Si and SiO₂/Si substrates. Gain and index guided lasers in various configurations fabricated using standard semiconductor manufacturing processes were simulated, fabricated, and experimentally characterized. Low threshold current densities in the range of 250 A/cm<super>2</super> were achieved. These are the lowest threshold current densities achieved for thin film single quantum well (SQW) lasers integrated on Si reported to date, and also the lowest reported, for thin film lasers operating in the 980 nm wavelength window.</p><p>These thin film EELs were also integrated with photolithographically patterned polymer (SU-8) waveguides on the same SiO₂/Si substrate. Coupling of the laser and waveguide was compared for the cases where an air gap existed between the thin film laser and the waveguide, and in which one facet of the thin film laser was embedded in the waveguide. The laser to waveguide coupling was improved by embedding the laser facet into the waveguide, and eliminating the air gap between the laser and the waveguide. Although the Fresnel reflectivity of the embedded facet was reduced by embedding the facet in the polymer waveguide, leading to a 27.2% increase in threshold current density for 800 &mum long lasers, the slope efficiency of the L-I curves was higher due to preferential power output from the front (now lower reflectivity) facet. In spite of this reduced mirror reflectivity, threshold current densities of 260 A/cm<super>2</super> were achieved for 1000 &mum long lasers. This passively aligned structure eliminates the need for precise placement and tight tolerances typically found in end-fire coupling configurations on separate substrates.</p> / Dissertation

The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the GaN-based LDs, which is free from efficiency droop, outperform LEDs as a viable high-power light source. Conventionally, the InGaN-based LDs are grown on polar, c-plane GaN substrates. However, a relatively low differential gain limited the device performance due to a significant polarization field in the active region. Therefore, the LDs grown on nonpolar m-plane and semipolar (2021)-plane GaN substrates are posed to deliver high-efficiency owing to the entirely or partially eliminated polarization field. To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as LDs, transverse-transmission modulators, and waveguide photodetectors. The integration of III-nitride photonic components, including the light emitter, modulator, absorber, amplifier, and photodetector, towards the realization of III-nitride photonic integrated circuit (PIC) offers the advantages of small-footprint, high-speed, and low power consumption, which has yet to be investigated. This dissertation presents the design, fabrication, and characterization of the multi-section InGaN laser diodes with integrated functionalities on semipolar (2021)-plane GaN substrates for enabling such photonic integration. The blue-emitting integrated waveguide modulator-laser diode (IWM-LD) exhibits a high modulation efficiency of 2.68 dB/V. A large extinction ratio of 11.3 dB is measured in the violet-emitting IWM-LD. Utilizing an integrated absorber, a high optical power (250mW), droop-free, speckle-free, and large modulation bandwidth (560MHz) blue-emitting superluminescent diode is reported. An integrated short-wavelength semiconductor optical amplifier with the laser diode at ~404 nm is demonstrated with a large gain of 5.32 dB at 6 V. A high-performance waveguide photodetector integrated LD at 405 nm sharing the single active region is presented, showing a significant large modulation bandwidth of 230 MHz. Thus these seamlessly integrated elements enable photonic IC at the visible wavelength for many important applications, such as smart lighting and display, optical communication, switching, clocking, and interconnect. The findings are therefore significant in developing an energy-saving platform technology that powers up human activities in a safe, health- and environmental-friendly manner.