This thesis concentrates on laboratory measurements of the Electron Drift Instrument (EDI), focussing primarily on the EDI optics of the system. The EDI is a device used on spacecraft to measure electric fields by emitting an electron beam and measuring the E X B drift of the returning electrons after one gyration. This drift velocity is determined using two electron beams directed perpendicular to the magnetic field returning to be detected by the spacecraft. The EDI will be used on the Magnetospheric Multi-Scale Mission. The EDI optic's testing process takes measurements of the optics response to a uni-directional electron beam. These measurements are used to verify the response of the EDI's optics and to allow for the optimization of the desired optics state via simulation. The optics state tables were created in simulations and we are using these measurements to confirm their accuracy. The setup consisted of an apparatus made up of the EDI's optics and sensor electronics was secured to the two axis gear arm inside a vacuum chamber. An electron beam was projected at the apparatus which then used the EDI optics to focus the beam into the micro-controller plates and onto the circular 32 pad annular ring that makes up the sensor. The concentration of counts per pad over an interval of 1ms were averaged over 25 samples and plotted in MATLAB. The results of the measurements plotted agreed well with the simulations, providing confidence in the EDI instrument.

Made available in DSpace on 2014-10-09T12:42:34Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:01:33Z (GMT). No. of bitstreams: 0 / Tese (Doutoramento) / IPEN/T / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

Made available in DSpace on 2014-10-09T12:42:34Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:01:33Z (GMT). No. of bitstreams: 0 / O deslocamento de elétrons em gases pode ser caracterizado por grandezas macroscópicas tais como a velocidade de arrastamento, taxa de ionização, primeiro coeficiente de Townsend e os coeficientes de difusão longitudinal e transversal, que são denominados de parâmetros de transporte. Esses parâmetros são importantes já que permitem a validação das secções de choque de colisões de elétrons com as moléculas do gás, contribuem com informações para modelos de descargas automantidas e são importantes para o desenvolvimento de novos detectores gasosos. Neste trabalho são apresentados os resultados de velocidade de arrastamento (W), taxa de ionização (Ri) e do primeiro coeficiente Townsend de ionização (α), para o isobutano e n-butano em função do campo elétrico reduzido efetivo no intervalo de 130 a 180 Td, obtidos utilizando a técnica de Townsend pulsada. Em nosso aparato, os elétrons primários são gerados a partir da incidência no catodo de um curto pulso de laser e são acelerados em direção ao anodo por meio de um campo elétrico uniforme. O sinal elétrico proveniente do deslocamento desses elétrons é digitalizado por um osciloscópio e a partir do ajuste de uma função modelo à forma do sinal elétrico, determinam-se os parâmetros de transporte. Os resultados obtidos para o isobutano e n-butano foram comparados com os valores da simulação Magboltz 2-versão 8.6 em razão da escassez de dados na literatura para esses gases na região de campo elétrico reduzido estudada. / Tese (Doutoramento) / IPEN/T / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

Made available in DSpace on 2014-10-09T12:27:39Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:04:10Z (GMT). No. of bitstreams: 0 / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Dissertacao (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP / FAPESP:07/06771-8

Made available in DSpace on 2014-10-09T12:27:39Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:04:10Z (GMT). No. of bitstreams: 0 / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / A velocidade de arrastamento de elétrons caracteriza a condutividade elétrica de um gás fracamente ionizado e é um dos mais importantes parâmetros de transporte para a simulação e modelagem de detectores de radiação e de descargas em plasmas. Neste trabalho são apresentados os resultados de velocidade de arrastamento de elétrons, em função do campo elétrico reduzido, obtidos para o nitrogênio e isobutano pela técnica de Townsend pulsada. Em uma câmara de geometria planar, os elétrons primários foram liberados de um catodo de alumínio devido à incidência de um feixe de laser de nitrogênio e acelerados em direção ao anodo (placa de vidro de elevada resistividade) por meio de um campo elétrico uniforme. Os rápidos sinais elétricos (da ordem de nanossegundos) gerados foram digitalizados em um osciloscópio de 1 GHz de largura de banda para medidas do tempo de trânsito dos elétrons e cálculo das velocidades de arrastamento em diferentes distâncias entre anodo e catodo. Para validar este método, as medidas foram feitas inicialmente no nitrogênio puro em uma região de campo elétrico reduzido de 148 a 194 Td. Os resultados mostraram um excelente acordo com aqueles encontrados na literatura para este gás, amplamente investigado. As medidas de velocidade de deriva de elétrons no isobutano puro foram realizadas em função do campo elétrico reduzido de 190 a 211 Td. Os resultados concordaram dentro dos erros experimentais com os valores simulados com o programa Imonte (versão 4.5) e com os resultados recentemente obtidos pelo nosso grupo no intervalo de campo elétrico reduzido investigado neste trabalho. / Dissertacao (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP / FAPESP:07/06771-8

AlGaAs/GaAs- und AlGaAs/GaAs/InGaAs-Quantengraben-Strukturen mit dotiertem Kanal sowie modulationsdotierte AlGaAs/InGaAs/GaAs- Heterostrukturen auf Halbleitermaterialien mit hoher Elektronendriftgeschwindigkeit werden erfolgreich zur Herstellung von Mikro-Hall-Bauelementen eingesetzt. Mit Blick auf ihre Eignung als Magnetfeldsensoren werden die Signal-Linearität, die Sensitivität und das Rauschen bei schwachen und starken elektrischen Feldern untersucht. Auch bei höheren elektrischen Feldern von mehr als 1.8 kV/cm zeigen die Bauelemente mit dotiertem Kanal eine ausgezeichnete Linearität des Signals. Magnetische Empfindlichkeiten von bis zu 600 V/A/T werden im Konstantstrombetrieb gemessen. Unter Verwendung eines Si-δ-dotierten pseudomorphen InGaAs-Quantengrabens wird sowohl eine bessere Sensitivität als auch ein besseres Rauschverhalten erzielt als bei homogen dotiertem GaAs-Kanal. Als beste Signal-Rausch-Empfindlichkeit wird ein Wert von 138 dB/T erreicht für ein Bauelement von 10·10 µm Fläche (bei 300 K, 100 kHz Messfrequenz und 1 Hz Bandbreite). Da das elektrische Verhalten dieser Strukturen besonders durch die hohen Elektronendriftgeschwindigkeiten bestimmt wird, tritt auch bei hohen elektrischen Feldern bis zu 2.4 kV/cm keine Degradation des Bauelementes auf. Als niedrigste Nachweisgrenze für Magnetfelder wird ein Wert von 127 nT/√Hz bestimmt. Verglichen damit, zeigen die modulationsdotierten Bauelemente von 20·20 µm Größe zwar eine höhere Signal-Rausch-Empfindlichkeit von 141 dB/T bei geringen elektrischen Feldern, die sich aber bei höheren Feldstärken stark verschlechtert. Daher haben die Bauelemente mit dotiertem Kanal und pseudomorph verspanntem InGaAs-Quantengraben unter Ausnutzung hoher Elektronendriftgeschwindigkeit bei hohen elektrischen Feldern einige Vorteile gegenüber den modulationsdotierten Strukturen mit hoher Elektronenbeweglichkeit. Untersuchungen der thermischen Stabilität von Bauelementen mit modulationsdotiertem Quantengraben zeigen, dass eine dicke InGaAs-Schicht (innerhalb fixierter Gesamtdicke des GaAs/InGaAs-Kanals) erforderlich ist, um die parasitäre Parallel-Leitfähigkeit des GaAs-Kanals zu vermeiden. Unter Berücksichtigung dieser Erkenntnis und bei Verwendung eines hohen Dotierungsgrades werden ausgezeichnete Temperaturstabilitäten von 90 ppm/K im Konstantstrombetrieb und 192 ppm/K im Konstantspannungsbetrieb erzielt. Unabhängig davon zeigen optische Untersuchungen mit Photolumineszenz-Spektroskopie und Raman-Streuung einen hohen Fehlordnungsgrad in dünnen InGaAs-Quantengräben, der dagegen für dicke pseudomorphe InGaAs-Schichten vernachlässigbar ist. Daher resultiert eine dickere InGaAs-Schicht nicht nur in einer höheren absoluten magnetischen Sensitivität und besseren thermischen Stabilität, sondern auch in geringerem 1/f-Rauschen als Ergebnis von Leitfähigkeitsfluktuationen. Besondere Anstrengungen werden unternommen zum Einsatz der Rauschspektroskopie tiefer Zentren zur Untersuchung der Qualität von Halbleitervolumina bzw. -schichten. In Kombination mit den Untersuchungen der betriebsstromabhängigen Sensitivität erweist sich diese Methode als am Besten geeignet für die Optimierung von Mikro-Hall-Bauelementen. Der Einfluss der Skalierung des Bauelementes auf seine Charakteristika wie Rauschen und magnetische Empfindlichkeit wird untersucht. Sowohl die Signal-Rausch-Empfindlichkeit als auch die Grenzempfindlichkeit sind größenabhängig. Der Einfluss der Geometrie auf die Verteilung des elektrischen Feldes wird für die Form eines Griechischen Kreuzes durch numerische Rechnungen simuliert und diskutiert. Abgerundete Ecken erweisen sich als am Besten geeignet für die Herstellung hochsensitiver und rauscharmer Mikro-Hall-Bauelemente. / Doped-channel quantum well (QW) AlGaAs/GaAs and AlGaAs/GaAs/InGaAs as well as modulation-doped AlGaAs/InGaAs/GaAs heterostructures based on high electron drift velocity semiconductors are successfully applied to the fabrication of micro-Hall devices. Considering these devices as magnetic sensors, their properties were characterized in terms of signal linearity, sensitivity and noise at low and high electric fields. Even at electric fields higher than 1.8 kV/cm, the doped-channel devices exhibit an excellent signal linearity. Magnetic sensitivities up to 600 V/T/A in current drive mode are measured. The usage of a Si-δ-doped pseudomorphic InGaAs QW results in better sensitivity and noise performance than does uniformly doped GaAs. A maximal signal-to-noise sensitivity (SNS) of 138 dB/T is achieved in 10 μm square size device at 300 K, 100 kHz frequency and 1 Hz bandwidth. Because the performance in these structures is driven in part by the high electron drift velocity, it does not degrade even at high electric fields up to 2.4 kV/cm and corresponds to a lowest detection limit of 127 nT/√Hz. Comparatively, the modulation-doped devices of 20 μm square size exhibit a higher SNS of 141 dB/T at low electric fields, but degrade at higher fields. Thus, the doped-channel pseudomorphically strained InGaAs QW high-velocity devices have several advantages over modulation-doped high-mobility structures at high electric fields. Thermal stability studies of doped-channel QW devices reveal a thick InGaAs layer (within a fixed total thickness of the GaAs/InGaAs channel) necessary to avoid the parasitic parallel conductivity in GaAs channel. Using this result and a high doping level, superior temperature stabilities of 90 ppm/K in the current drive mode and 192 ppm/K in the voltage drive mode are attained. Independently, optical studies like photoluminescence and Raman scattering reveal a high degree of disorder in thin InGaAs QWs, being negligible for thick pseudomorphic InGaAs layers. Hence, a thick InGaAs layer causes not only a higher absolute magnetic sensitivity and a better thermal stability, but also lower 1/f noise being a result of conductivity fluctuations. Special effort is devoted to the application of deep level noise spectroscopy as a very sensitive probe for semiconductor bulk and layer quality. Combined with supply-current-related sensitivity studies, this method is most suitable for micro-Hall device optimization. The effect of device scaling on device characteristics like noise and absolute magnetic sensitivity is studied. Both the SNS and detection limit are shown as size-dependent. Additionally, geometry effects on the electric field distribution for Greek cross shapes are simulated by numerical calculations and discussed. Rounded corners appear as most appropriate for the fabrication of highly sensitive low-noise micro-Hall devices.

L'étude des phénomènes turbulents se développant en sortie du propulseur de Hall est nécessaire pour pouvoir modéliser le transport anormal (par opposition au transport diffusif) des électrons à travers les lignes de champ magnétique. Les relations de dispersion de deux instabilités pouvant être responsables de ce transport ont été mesurées à des échelles millimétriques à l'aide du diagnostic de diffusion collective de la lumière. Ce travail de thèse s'attache à en donner une description aussi bien théorique qu'expérimentale, pierre à l'édifice de la compréhension du transport dans le propulseur. Une instabilité se propageant majoritairement dans la direction azimutale du propulseur y est caractérisée comme étant l'instabilité de dérive électronique ExB et un modèle analytique décrivant la fréquence expérimentale y est dérivé et validé. De plus, le manuscrit présente une méthode de déconvolution du signal de la diffusion collective de la fonction d'appareil pour ce mode. Une fois déconvoluées, les relations de dispersion expérimentales peuvent être ajustées par la fréquence du modèle analytique, ce qui permet de mesurer expérimentalement et de manière originale la température et la densité électronique dans le jet d'ions énergétiques du plasma du propulseur. Enfin, la seconde instabilité, se développant autour de la direction axiale du propulseur, est caractérisée comme l'instabilité double faisceau entre les ions simplement et doublement chargés du plasma / The study of turbulent phenomena that grow at the exit plane of the Hall thruster is required to modelize the anomalous transport (in contrast to the diffusion transport) of electrons across the magnetic field lines. The dispersion relations of two instabilities that can be responsible for this transport have been mesured at millimetric scales by mean of the collective light scattering diagnostic. The aim of the thesis is to describe them theoretically as well as experimentally, improving the understanding of the Hall thruster transport. In the thesis, an instability that propagates principally azimuthally is caracterized as the ExB electron drift instability and an analytical model that describes the experimental frequency is derived and validated. In addition, the manuscript presents an original method to unfold the signal of the collective scattering diagnostic from the instrumental function of this mode. Once corrected, the experimental dispersion relations can be adjusted by the frequency given by the analytical model, allowing to measure experimentally and in an original way the electron temperature and density in the energetic ion jet of the Hall thruster plasma. The second instability that is mainly propagating in the axial direction is caracterized as the two-stream instability between the simply and doubly charged ions of the plasma