When intense laser pulses interact with an atomic or solid target, high order harmonics of the fundamental laser frequency are generated. In the case of atoms, this highly nonlinear optical process is initiated by ionization and terminated by the energetic recollision and recombination of the ionized electron with its correlated ion. In this thesis I demonstrate, both theoretically and experimentally, that high harmonics from bulk crystals can originate from the recollision of electrons with their associated holes, similarly to the atomic case, but where ionization is replaced by excitation of electron-hole pairs that accelerate within the material. This model is first derived from a quantum-mechanical theory of the solid-laser interaction, and then confirmed experimentally in ZnO and Si crystals. Despite the link I establish between high harmonic generation in solids and gases, there are notable dissimilarities. These include: a generalized motion of electrons and holes in their respective bands and its consequences, a more prominent role of dephasing and enhanced sensitivity to perturbing fields. These aspects are investigated throughout this thesis. Finally, I develop a method that exploits the recollision mechanism to reconstruct the momentum-dependent band structure of solids.

As a potential solution to the global energy and environmental pollution, design and synthesis of artificial photocatalysts with high activities have attracted increasing scientific interests worldwide. In recent years, the graphitic carbon nitride (g-C3N4) has shown new possible applications in the photocatalytic field due to its unique properties. However, the photocatalytic efficiency of the pristine g-C3N4 is greatly limited by the high recombination rate of the photo-induced electron-hole pairs. In this thesis, the aim is to design and fabricate efficient g-C3N4 based photocatalysts with enhanced photocatalytic activities under a visible light irradiation. In order to achieve this goal, two strategies have been employed in the present thesis. First, the as-obtained g-C3N4 was used as the host material to construct staggered-aligned composite photocatalysts by selecting semiconductors with suitable band positions. By this method, three kinds of g-C3N4-based composite photocatalysts such as g-C3N4/ZnS nanocage, g-C3N4/m-Ag2Mo2O7 and g-C3N4/MIL-88A were successfully fabricated. Second, the microstructure of the g-C3N4 was modified by the H2O2-treatment at an elevated temperature and ambient pressure. In this study, the g-C3N4 was prepared by a simple pyrolysis of urea. As for all the as-synthesized phtocatalysts, the structures, morphologies and the optical properties were carefully characterized by the following techniques: XRD, SEM, TEM, FT-IR and DRS. Also, the band edge positions of m-Ag2Mo2O7 and MIL-88A were studied by the Mott-Schottky methods. Thereafter, the photocatalytic activities were evaluated by using a solution of rhodamine B (RhB) as a target pollutant for the photodegradation experiments performed under a visible light irradiation. The results showed that all the aforementioned g-C3N4-based photocatalysts exhibited enhanced photocatalytic activities in comparison with the pristine g-C3N4. For the case of the g-C3N4-based composite photocatalysts, the enhancement factor over the pristine g-C3N4 can achieve values ranging from 2.6 to 3.4. As for the H2O2-treated g-C3N4, the degradation rate constant can be 4.6 times higher than that of the pristine g-C3N4. To understand the key factors in new materials design, we also devote a lot of efforts to elucidate the basic mechanisms during the photocatalytic degradation of organic pollutant. Based on the results of the active species trapping (AST) experiments, the main active species in each photocatalytic system were determined. In the g-C3N4/m-Ag2Mo2O7 and the g-C3N4/MIL-88A system, three kinds of active species of ·O2-, h+ and ·OH were found to be involved in the photocatalytic reaction. Among them, the ·O2- and h+ were the main active species. In the g-C3N4/ZnS and H2O2-treated g-C3N4 photocatalytic systems, the main active species was determined as the ·O2-. The reaction pathways of these active species were also demonstrated by comparing the band edge positions with the potentials of the redox couple. In addition, the relationship between the active species and the photocatalytic behaviors of N-de-ethylation and conjugated structure cleavage were studied. Finally, possible mechanisms to explain the enhanced photocatalytic activities were proposed for each photocatalytic system. The results in this thesis clearly confirm that the photocatalytic activity of the g-C3N4 based photocatalyst can efficiently be enhanced by constructions of staggered-aligned composites and by modification of the microstructure of the g-C3N4. The enhanced photocatalytic performance can mainly be ascribed to the efficient separation of the photo-induced electron-hole pairs and the increase of the active sites for the photocatalytic reaction. / <p>QC 20150909</p>

In the last 10-15 years there has been a renewed interest in amorphous Se (a-Se) and its alloys due to their application as photoconductor materials in the new fully digital direct conversion flat panel x-ray medical image detectors. For a number of reasons, the a-Se photoconductor layer in such x-ray detectors has to be operated at very high electric fields (up to 10 Volts per micron) and one of the most difficult problems related to such applications of a Se is the problem of the dark current (the current in the absence of any radiation) minimization in the photoconductor layer. <p>This PhD work has been devoted to researching the possibilities for dark current minimization in a-Se x-ray photoconductors devices through a systematic study of the charge transport (carrier mobility and carrier lifetimes) and dark currents in single and multilayered a-Se devices as a function of alloying, doping, deposition condition and other fabrication factors. The results of the studies are extensively discussed in the thesis. We have proposed a new technological method for dark current reduction in single and multilayered a-Se based photoconductor for x-ray detector applications. The new technology is based on original experimental findings which demonstrate that both hole transport and the dark currents in a-Se films are a very strong function of the substrate temperature (Tsubstrate) during the film deposition process. We have shown that the new technique reduces the dark currents to approximately the same levels as achievable with the previously existing methods for dark current reduction. However, the new method is simpler to implement, and offers some potential advantages, especially in cases when a very high image resolution (20 cycles/mm) and/or fast pixel readout (more than 30 times per second) are needed. <p>Using the new technology we have fabricated simple single and double (ni-like) photoconductor layers on prototype x-ray image detectors with CCD (Charge Coupled Device) readout circuits. Dark currents in the a-Se photoconductor layer were not a problem for detector operation at all tested electric fields. Compared to the currently available commercial systems for mammography, the prototype detectors have demonstrated an excellent imaging performance, in particular superior spatial resolution (20 cycles/mm). Thus, the newly proposed technology for dark current reduction has shown a potential for commercialization.

In the last 10-15 years there has been a renewed interest in amorphous Se (a-Se) and its alloys due to their application as photoconductor materials in the new fully digital direct conversion flat panel x-ray medical image detectors. For a number of reasons, the a-Se photoconductor layer in such x-ray detectors has to be operated at very high electric fields (up to 10 Volts per micron) and one of the most difficult problems related to such applications of a Se is the problem of the dark current (the current in the absence of any radiation) minimization in the photoconductor layer. <p>This PhD work has been devoted to researching the possibilities for dark current minimization in a-Se x-ray photoconductors devices through a systematic study of the charge transport (carrier mobility and carrier lifetimes) and dark currents in single and multilayered a-Se devices as a function of alloying, doping, deposition condition and other fabrication factors. The results of the studies are extensively discussed in the thesis. We have proposed a new technological method for dark current reduction in single and multilayered a-Se based photoconductor for x-ray detector applications. The new technology is based on original experimental findings which demonstrate that both hole transport and the dark currents in a-Se films are a very strong function of the substrate temperature (Tsubstrate) during the film deposition process. We have shown that the new technique reduces the dark currents to approximately the same levels as achievable with the previously existing methods for dark current reduction. However, the new method is simpler to implement, and offers some potential advantages, especially in cases when a very high image resolution (20 cycles/mm) and/or fast pixel readout (more than 30 times per second) are needed. <p>Using the new technology we have fabricated simple single and double (ni-like) photoconductor layers on prototype x-ray image detectors with CCD (Charge Coupled Device) readout circuits. Dark currents in the a-Se photoconductor layer were not a problem for detector operation at all tested electric fields. Compared to the currently available commercial systems for mammography, the prototype detectors have demonstrated an excellent imaging performance, in particular superior spatial resolution (20 cycles/mm). Thus, the newly proposed technology for dark current reduction has shown a potential for commercialization.