Orientador: Peter Alexander Bleinroth Schulz / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-13T03:40:09Z (GMT). No. of bitstreams: 1 PaezGonzalez_CarlosJose_M.pdf: 17726649 bytes, checksum: 92453a3b81784c5899922a7943ef209f (MD5) Previous issue date: 2009 / Resumo: Neste trabalho estudamos a localização dos modos vibracionais de três modelos simples do DNA: cadeia unidimensional,dupla cadeia e o modelo de quatro cadeias; nestes modelos substituímos os grupos atômicos por massas efetivas ligadas entre si com molas. Para cada modelo calculamos e diagonalizamos a matriz dinâmica obtendo os modos vibracionais e suas freqüências. Cada componente de um modo vibracional representa a amplitude da oscilação nesse sitio, permitindo calcular a razão de participação e a fiutuação relativa desse modo. A partir destas grandezas se mostrou que nos sistemas quasi-unidimensionais (dupla cadeia e quatro cadeias) existe um intervalo a baixas freqüências onde todos os modos vibracionais são estendidos independentemente da seqüencia e as possíveis constantes de mola. / Abstract: ln this work we studied the localization of vibrational modes of three simple models of DNA: unidimensional chain, double chain and the model of falir chains. ln these models, atomic groups were replaced by effective fiasses linked to each other by springs. For each model, the dynamic matrix was calculated and diagonalized obtaining the vibrational modes with their frequencies. Each component of a vibrational mode represents the amplitude of the oscillation in that site, allowing the calculation of the participation fatia and the relative fluctuation of that mode. From these quantities we showed that there is a range at low frequencies in quasi-one-dimensional systems (double chain and falir chains) where alI vibrational modes are extended regardless the sequence and spring constants. / Mestrado / Física da Matéria Condensada / Mestre em Física

Propostas de construção de dispositivos que unem a eletrônica com a spintrônica utilizando compostos semicondutores magnéticos diluídos (DMS) tem se tornado cada mais frequentes junto à comunidade científica em geral. Em particular, por suas propriedades magnéticas e de transporte hoje conhecidas, camadas de GaAs/GaMnAs pertencem a um grupo de DMS com grandes possibilidades de utilização prática. Nesse sentido, entender suas propriedades de transporte é essencial para o desenvolvimento dessa nova área. Investigamos o transporte spin polarizado em nanocamadas de GaAs/GaMnAs que exibem uma fase ferromagnética abaixo de certa temperatura de transição de fase. Como procedimento de pesquisa, nosso cálculo da resistividade considerou a existência de uma banda de impureza que determina a natureza do estado no nível de Fermi e dos estados próximos a ele como estendidos (condução "metálica") ou localizados (condução por excitação térmica). A ordem magnética e a resistividade são interligados devido à influência da polarização de spin da banda de impurezas e um efeito tipo separação Zeeman sobre a mobility edge (1). Obtivemos para um dado intervalo de concentração de manganês e de portadores, um comportamento metálico em que o transporte por estados estendidos domina em baixas temperaturas e é dominado por um processo de excitação térmica dos estados localizados para temperaturas próximas e acima da temperatura de transição. O resultado dessa combinação de canais de condução foi o aparecimento de uma lombada na resistividade, a qual tem sido observada experimentalmente, e traz esclarecimentos sobre a relação entre as propriedades de transporte e magnéticas desse material. (1) Embora a expressão possa ter uma tradução, é comumente usada na área em inglês. / Construction proposals of the contrivances that put together electronic with spintronic using diluted magnetic semiconducting compounds (DMS) are more and more frequent to the scientific community in general. In particular, because of its magnetic and transporting rightnesses that has been known today, GaMnAs stratums belongs to a DMS group with great possibilities of the practical utilization. In this sense, to understand its transporting rightnesses is essential to the development in this new area. We investigate the polarized spin transport in GaMnAs nanolayers that display an ferromagnetic stage below of the specific phase transition temperature. As a procedure research, our resistivity estimate has consider the existence of an impurity band that determine the state nature in the Fermi level and the states near to it like extended (metallicconduction) or located (thermic excitation conduction). The magnetic order and resistivity are interconnected due to the influence of the spin polarization of the band of the impurities and another efect as a Zeeman separation over the moblility edge. We aquire, for a certain interval of bearings and manganese concentration, a metallic behavior in which the transport to the extended states rules in low temperatures and is ruled by an process of thermic excitation of the states located to near and over temperatures of the transition temperature. The result of this transport channels combination was the appearance of an acclivity in the resistivity that has been observed experimentally and brings elucidations about the relation between the magnetic and transporting rightnesses of this material.

Propostas de construção de dispositivos que unem a eletrônica com a spintrônica utilizando compostos semicondutores magnéticos diluídos (DMS) tem se tornado cada mais frequentes junto à comunidade científica em geral. Em particular, por suas propriedades magnéticas e de transporte hoje conhecidas, camadas de GaAs/GaMnAs pertencem a um grupo de DMS com grandes possibilidades de utilização prática. Nesse sentido, entender suas propriedades de transporte é essencial para o desenvolvimento dessa nova área. Investigamos o transporte spin polarizado em nanocamadas de GaAs/GaMnAs que exibem uma fase ferromagnética abaixo de certa temperatura de transição de fase. Como procedimento de pesquisa, nosso cálculo da resistividade considerou a existência de uma banda de impureza que determina a natureza do estado no nível de Fermi e dos estados próximos a ele como estendidos (condução "metálica") ou localizados (condução por excitação térmica). A ordem magnética e a resistividade são interligados devido à influência da polarização de spin da banda de impurezas e um efeito tipo separação Zeeman sobre a mobility edge (1). Obtivemos para um dado intervalo de concentração de manganês e de portadores, um comportamento metálico em que o transporte por estados estendidos domina em baixas temperaturas e é dominado por um processo de excitação térmica dos estados localizados para temperaturas próximas e acima da temperatura de transição. O resultado dessa combinação de canais de condução foi o aparecimento de uma lombada na resistividade, a qual tem sido observada experimentalmente, e traz esclarecimentos sobre a relação entre as propriedades de transporte e magnéticas desse material. (1) Embora a expressão possa ter uma tradução, é comumente usada na área em inglês. / Construction proposals of the contrivances that put together electronic with spintronic using diluted magnetic semiconducting compounds (DMS) are more and more frequent to the scientific community in general. In particular, because of its magnetic and transporting rightnesses that has been known today, GaMnAs stratums belongs to a DMS group with great possibilities of the practical utilization. In this sense, to understand its transporting rightnesses is essential to the development in this new area. We investigate the polarized spin transport in GaMnAs nanolayers that display an ferromagnetic stage below of the specific phase transition temperature. As a procedure research, our resistivity estimate has consider the existence of an impurity band that determine the state nature in the Fermi level and the states near to it like extended (metallicconduction) or located (thermic excitation conduction). The magnetic order and resistivity are interconnected due to the influence of the spin polarization of the band of the impurities and another efect as a Zeeman separation over the moblility edge. We aquire, for a certain interval of bearings and manganese concentration, a metallic behavior in which the transport to the extended states rules in low temperatures and is ruled by an process of thermic excitation of the states located to near and over temperatures of the transition temperature. The result of this transport channels combination was the appearance of an acclivity in the resistivity that has been observed experimentally and brings elucidations about the relation between the magnetic and transporting rightnesses of this material.

L’étude de l’impact des défauts sur les propriétés électriques des semi-conducteurs a joué un rôle crucial dans la révolution des technologies de l’information dans le milieu du 20ème siècle. Jusqu’ici, la course à la miniaturisation a permis de répondre à la demande croissante en termes de puissance de calcul. Cependant, cette stratégie est vouée à rencontrer des limites physiques qu’il ne sera pas possible de surpasser, c’est pourquoi de nouvelles approches sont nécessaire. Dans ce nouveau paradigme de recherche, les dispositifs électroniques à base d’oxydes sont des candidats prometteurs afin de réaliser de nouveaux dispositifs multifonctionnels. L’importance des défauts sur les propriétés nominale des oxydes n’est pas autant reconnue que dans le domaine des semi-conducteurs. Notre projet de recherche tourne autour de deux objectifs principaux, le premier a pour but d’identifier explicitement l’impact de défauts spécifiques sur les propriétés électrique de dispositifs à base d’oxydes. Le second a pour but de tirer avantage des propriétés induites pour les défauts pour des applications optoélectroniques. / The study of the impact of defects on the electrical properties of semiconductors played a crucial role in the revolution of information technologies in the middle of the 20th century. Up to now, the race to miniaturization allowed to meet the increasing demand in terms of processing power. However, this strategy is predicted to encounter physical limits impossible to overcome and new approaches are necessary. Within this new research paradigm, oxide based electronic devices are promising candidates to fabricate new multifunctional devices. The importance of defects on the nominal properties of oxides is not acknowledged as much as it is in the field of semiconductors. Our research project revolved around two primary objectives, the first one aimed to explicitly identify the impact of specific defects on the properties of oxide-based electronic devices. The second one aimed to actually take advantage of properties induced by defects for optoelectronic applications.

In the last 10-15 years there has been a renewed interest in amorphous Se (a-Se) and its alloys due to their application as photoconductor materials in the new fully digital direct conversion flat panel x-ray medical image detectors. For a number of reasons, the a-Se photoconductor layer in such x-ray detectors has to be operated at very high electric fields (up to 10 Volts per micron) and one of the most difficult problems related to such applications of a Se is the problem of the dark current (the current in the absence of any radiation) minimization in the photoconductor layer. <p>This PhD work has been devoted to researching the possibilities for dark current minimization in a-Se x-ray photoconductors devices through a systematic study of the charge transport (carrier mobility and carrier lifetimes) and dark currents in single and multilayered a-Se devices as a function of alloying, doping, deposition condition and other fabrication factors. The results of the studies are extensively discussed in the thesis. We have proposed a new technological method for dark current reduction in single and multilayered a-Se based photoconductor for x-ray detector applications. The new technology is based on original experimental findings which demonstrate that both hole transport and the dark currents in a-Se films are a very strong function of the substrate temperature (Tsubstrate) during the film deposition process. We have shown that the new technique reduces the dark currents to approximately the same levels as achievable with the previously existing methods for dark current reduction. However, the new method is simpler to implement, and offers some potential advantages, especially in cases when a very high image resolution (20 cycles/mm) and/or fast pixel readout (more than 30 times per second) are needed. <p>Using the new technology we have fabricated simple single and double (ni-like) photoconductor layers on prototype x-ray image detectors with CCD (Charge Coupled Device) readout circuits. Dark currents in the a-Se photoconductor layer were not a problem for detector operation at all tested electric fields. Compared to the currently available commercial systems for mammography, the prototype detectors have demonstrated an excellent imaging performance, in particular superior spatial resolution (20 cycles/mm). Thus, the newly proposed technology for dark current reduction has shown a potential for commercialization.

In the last 10-15 years there has been a renewed interest in amorphous Se (a-Se) and its alloys due to their application as photoconductor materials in the new fully digital direct conversion flat panel x-ray medical image detectors. For a number of reasons, the a-Se photoconductor layer in such x-ray detectors has to be operated at very high electric fields (up to 10 Volts per micron) and one of the most difficult problems related to such applications of a Se is the problem of the dark current (the current in the absence of any radiation) minimization in the photoconductor layer. <p>This PhD work has been devoted to researching the possibilities for dark current minimization in a-Se x-ray photoconductors devices through a systematic study of the charge transport (carrier mobility and carrier lifetimes) and dark currents in single and multilayered a-Se devices as a function of alloying, doping, deposition condition and other fabrication factors. The results of the studies are extensively discussed in the thesis. We have proposed a new technological method for dark current reduction in single and multilayered a-Se based photoconductor for x-ray detector applications. The new technology is based on original experimental findings which demonstrate that both hole transport and the dark currents in a-Se films are a very strong function of the substrate temperature (Tsubstrate) during the film deposition process. We have shown that the new technique reduces the dark currents to approximately the same levels as achievable with the previously existing methods for dark current reduction. However, the new method is simpler to implement, and offers some potential advantages, especially in cases when a very high image resolution (20 cycles/mm) and/or fast pixel readout (more than 30 times per second) are needed. <p>Using the new technology we have fabricated simple single and double (ni-like) photoconductor layers on prototype x-ray image detectors with CCD (Charge Coupled Device) readout circuits. Dark currents in the a-Se photoconductor layer were not a problem for detector operation at all tested electric fields. Compared to the currently available commercial systems for mammography, the prototype detectors have demonstrated an excellent imaging performance, in particular superior spatial resolution (20 cycles/mm). Thus, the newly proposed technology for dark current reduction has shown a potential for commercialization.