Global ETD Search

1	Development Of Cadmium Selenide As An Absorber Layer For Tandem Solar Cells Jeedigunta, Sathyaharish 26 March 2004 (has links) Cadmium Selenide is a binary compound. It has a band gap of 1.7 eV. This is one of the suitable materials for an absorber layer in the top cell of a tandem solar cell. CIGS with a low Gallium content has a band gap of 1 eV suits well as an absorber layer for the bottom cell. CIGS cells have already attained an efficiency of 15% [1,2]. Since years, research has been done in developing the bottom cell. The results of the bottom cell are promising. So the fabrication of an efficient top cell in a tandem solar cell is a challenge. To achieve a high tandem efficiency of above 25 %, the top cell has to contribute at least 2/3 of the total efficiency, which necessitates the top cell to have at least 16 to 18 % efficiency [3]. Development of a defect free absorber layer is a crucial step in this process to achieve the above goals besides optimizing other layers. Selenium vacancies in CdSe make the absorber layer n-type. CdSe is deposited by closed space sublimation. Deposition of CdSe at higher substrate temperatures in comparison to the standard conditions was studied. ZnSe acts as an insulating layer. It is thermally evaporated in an Evaporation system. Copper acts as a metal contact on top of the insulator resulting in a MIS structure. Copper is also deposited by Thermal Evaporation. Devices are fabricated on different substrates like SnO2: F, AZO etc. Fabricated cells are characterized by J-V and Spectral response measurements. Devices fabricated on SnO2: F substrates show typical open circuit voltages of around 220 mV, short circuit current densities of 10.02 mA/cm2 and fill factors around 33 %. N-type CdS when deposited on SnO2: F below the absorber layer further improved Voc's to around 330 mV. Annealing of these devices improved Voc's to about 350 mV but Jsc's remained 7.21 mA/cm2. css fill factor trasmission substrate temperature American Studies Arts and Humanities
2	Molecular Dynamics Study of Hydrogen Trapping and Helium Clustering in Tungsten Gurung, Ashok 28 August 2018 (has links) No description available. Physics low energy hydrogen trapping effect of substrate temperature plasma confinement
3	The use of FLUENT for heat flow studies of the hot-wire chemical vapor deposition system to determine the temperatures reached at the growing layer surface ZHOU, EN January 2009 (has links) <p>The overall aim of this project is to study the heat transfer inside the reaction chamber of the Hot-Wire Chemical Vapor Deposition (HWCVD) system with a commercial software package FLUENT6.3 / it is one of the most popular Computational Fluid Dynamics solvers for complex flows ranging from incompressible to mildly compressible to even highly compressible flows. The wealth of physical models in FLUENT allows us to accurately predict laminar and turbulent flows, various modes of heat transfer, chemical reactions, multiphase flows and other phenomena with complete mesh flexibility and solution-based mesh adaptation. In this study the 3-D HWCVD geometry was measured and created in GAMBIT which then generates a mesh model of the reaction chamber for the calculation in FLUENT. The gas flow in this study was characterized as the steady and incompressible fluid flow due to the small Mach number and assumptions made to simplify the complexity of the physical geometry. This thesis illustrates the setups and solutions of the 3-D geometry and the chemically reacting laminar and turbulent gas flow, wall surface reaction and heat transfer in the HWCVD deposition chamber.</p>
4	The use of FLUENT for heat flow studies of the hot-wire chemical vapor deposition system to determine the temperatures reached at the growing layer surface ZHOU, EN January 2009 (has links) <p>The overall aim of this project is to study the heat transfer inside the reaction chamber of the Hot-Wire Chemical Vapor Deposition (HWCVD) system with a commercial software package FLUENT6.3 / it is one of the most popular Computational Fluid Dynamics solvers for complex flows ranging from incompressible to mildly compressible to even highly compressible flows. The wealth of physical models in FLUENT allows us to accurately predict laminar and turbulent flows, various modes of heat transfer, chemical reactions, multiphase flows and other phenomena with complete mesh flexibility and solution-based mesh adaptation. In this study the 3-D HWCVD geometry was measured and created in GAMBIT which then generates a mesh model of the reaction chamber for the calculation in FLUENT. The gas flow in this study was characterized as the steady and incompressible fluid flow due to the small Mach number and assumptions made to simplify the complexity of the physical geometry. This thesis illustrates the setups and solutions of the 3-D geometry and the chemically reacting laminar and turbulent gas flow, wall surface reaction and heat transfer in the HWCVD deposition chamber.</p>
5	The use of FLUENT for heat flow studies of the hot-wire chemical vapor deposition system to determine the temperatures reached at the growing layer surface Zhou, En January 2009 (has links) Magister Scientiae - MSc / The overall aim of this project is to study the heat transfer inside the reaction chamber of the Hot-Wire Chemical Vapor Deposition (HWCVD) system with a commercial software package FLUENT6.3; it is one of the most popular Computational Fluid Dynamics solvers for complex flows ranging from incompressible to mildly compressible to even highly compressible flows. The wealth of physical models in FLUENT allows us to accurately predict laminar and turbulent flows, various modes of heat transfer, chemical reactions, multiphase flows and other phenomena with complete mesh flexibility and solution-based mesh adaptation. In this study the 3-D HWCVD geometry was measured and created in GAMBIT which then generates a mesh model of the reaction chamber for the calculation in FLUENT. The gas flow in this study was characterized as the steady and incompressible fluid flow due to the small Mach number and assumptions made to simplify the complexity of the physical geometry. This thesis illustrates the setups and solutions of the 3-D geometry and the chemically reacting laminar and turbulent gas flow, wall surface reaction and heat transfer in the HWCVD deposition chamber. / South Africa Hot-Wire Chemical Vapor Deposition Computational Fluid Dynamics Heat Flow Simulation Heat Transfer Radiation FLUENT GAMBIT Substrate Temperature
6	Electrical properties of amorphous selenium based photoconductive devices for application in x-ray image detectors Belev, Gueorgui Stoev 14 February 2007 In the last 10-15 years there has been a renewed interest in amorphous Se (a-Se) and its alloys due to their application as photoconductor materials in the new fully digital direct conversion flat panel x-ray medical image detectors. For a number of reasons, the a-Se photoconductor layer in such x-ray detectors has to be operated at very high electric fields (up to 10 Volts per micron) and one of the most difficult problems related to such applications of a Se is the problem of the dark current (the current in the absence of any radiation) minimization in the photoconductor layer. <p>This PhD work has been devoted to researching the possibilities for dark current minimization in a-Se x-ray photoconductors devices through a systematic study of the charge transport (carrier mobility and carrier lifetimes) and dark currents in single and multilayered a-Se devices as a function of alloying, doping, deposition condition and other fabrication factors. The results of the studies are extensively discussed in the thesis. We have proposed a new technological method for dark current reduction in single and multilayered a-Se based photoconductor for x-ray detector applications. The new technology is based on original experimental findings which demonstrate that both hole transport and the dark currents in a-Se films are a very strong function of the substrate temperature (Tsubstrate) during the film deposition process. We have shown that the new technique reduces the dark currents to approximately the same levels as achievable with the previously existing methods for dark current reduction. However, the new method is simpler to implement, and offers some potential advantages, especially in cases when a very high image resolution (20 cycles/mm) and/or fast pixel readout (more than 30 times per second) are needed. <p>Using the new technology we have fabricated simple single and double (ni-like) photoconductor layers on prototype x-ray image detectors with CCD (Charge Coupled Device) readout circuits. Dark currents in the a-Se photoconductor layer were not a problem for detector operation at all tested electric fields. Compared to the currently available commercial systems for mammography, the prototype detectors have demonstrated an excellent imaging performance, in particular superior spatial resolution (20 cycles/mm). Thus, the newly proposed technology for dark current reduction has shown a potential for commercialization. amorphous state amorphous semiconductors photoconductivity a Se photoconductors medical imaging radiation detectors high resolution digital mammography thick films experimental study electron hole pair lifetime localized states carrier lifetime trapping drift mobility carrier mobility charge carrier trapping alloying fabrication property relation arsenic additions doping chlorine additions deposition rate deposition conditions boat temperature substrate temperature annealing time-of-flight method dark current metal electrodes blocking layers double layer structure
7	Electrical properties of amorphous selenium based photoconductive devices for application in x-ray image detectors Belev, Gueorgui Stoev 14 February 2007 (has links) In the last 10-15 years there has been a renewed interest in amorphous Se (a-Se) and its alloys due to their application as photoconductor materials in the new fully digital direct conversion flat panel x-ray medical image detectors. For a number of reasons, the a-Se photoconductor layer in such x-ray detectors has to be operated at very high electric fields (up to 10 Volts per micron) and one of the most difficult problems related to such applications of a Se is the problem of the dark current (the current in the absence of any radiation) minimization in the photoconductor layer. <p>This PhD work has been devoted to researching the possibilities for dark current minimization in a-Se x-ray photoconductors devices through a systematic study of the charge transport (carrier mobility and carrier lifetimes) and dark currents in single and multilayered a-Se devices as a function of alloying, doping, deposition condition and other fabrication factors. The results of the studies are extensively discussed in the thesis. We have proposed a new technological method for dark current reduction in single and multilayered a-Se based photoconductor for x-ray detector applications. The new technology is based on original experimental findings which demonstrate that both hole transport and the dark currents in a-Se films are a very strong function of the substrate temperature (Tsubstrate) during the film deposition process. We have shown that the new technique reduces the dark currents to approximately the same levels as achievable with the previously existing methods for dark current reduction. However, the new method is simpler to implement, and offers some potential advantages, especially in cases when a very high image resolution (20 cycles/mm) and/or fast pixel readout (more than 30 times per second) are needed. <p>Using the new technology we have fabricated simple single and double (ni-like) photoconductor layers on prototype x-ray image detectors with CCD (Charge Coupled Device) readout circuits. Dark currents in the a-Se photoconductor layer were not a problem for detector operation at all tested electric fields. Compared to the currently available commercial systems for mammography, the prototype detectors have demonstrated an excellent imaging performance, in particular superior spatial resolution (20 cycles/mm). Thus, the newly proposed technology for dark current reduction has shown a potential for commercialization. amorphous state amorphous semiconductors photoconductivity a Se photoconductors medical imaging radiation detectors high resolution digital mammography thick films experimental study electron hole pair lifetime localized states carrier lifetime trapping drift mobility carrier mobility charge carrier trapping alloying fabrication property relation arsenic additions doping chlorine additions deposition rate deposition conditions boat temperature substrate temperature annealing time-of-flight method dark current metal electrodes blocking layers double layer structure
8	Haftmechanismen kaltgasgespritzter Aluminiumschichten auf keramischen Oberflächen Drehmann, Rico 17 October 2017 (has links) (PDF) Aluminiumschichten werden durch Kaltgasspritzen auf fünf verschiedene poly- und monokristalline keramische Werkstoffe (Al2O3 , AlN, SiC, Si3N4 , MgF2 ) appliziert. Dabei erfolgt eine Variation der Substrattemperatur und der Partikelgröße. Ausgewählte Proben werden einer nachfolgenden Wärmebehandlung unterzogen. Die im Fokus der Arbeit stehende Erforschung der an der Grenzfläche zwischen Aluminium und Keramik wirkenden Haftmechanismen erfolgt sowohl mithilfe einer mechanischen Charakterisierung (Stirnzugversuche) als auch durch verschiedene mikroskopische, spektroskopische und hochauflösende Methoden. Die Bewertung der Untersuchungsergebnisse zeigt, dass im Allgemeinen ein Anstieg der Haftzugfestigkeit mit steigender Substrat- und Wärmebehandlungstemperatur sowie mit zunehmender thermischer Effusivität des Substratwerkstoffs zu verzeichnen ist. Eine vergleichbare Auswirkung hat innerhalb bestimmter Grenzen die Zunahme der Partikelgröße. Mit der Heteroepitaxie wird neben der mechanischen Verklammerung ein weiterer wichtiger Haftmechanismus kaltgasgespritzter metallischer Schichten auf keramischen Substraten identifiziert. Die Ausbildung von quasiadiabatischen Scherbändern und statische Rekristallisationsprozesse wirken dabei als wichtige begleitende Mechanismen. Als Nachweis für heteroepitaktisches Wachstum ist die Existenz von (annähernd) parallelen, senkrecht oder geneigt zur Grenzfläche stehenden Ebenenpaaren, die eine geringe Gitterfehlanpassung aufweisen, zu werten. Der Vergleich mit PVD-Schichten zeigt, dass in Bezug auf die Orientierung von Gitterebenen verschiedene Mechanismen der Heteroepitaxie existieren, die von der atomaren Mobilität des Beschichtungswerkstoffs bestimmt werden. Kaltgasspritzen Haftmechanismen Aluminium Aluminiumoxid (Al2O3 ) Aluminiumnitrid (AlN) Siliziumcarbid (SiC) Siliziumnitrid (Si3N4 ) Magnesiumfluorid (MgF2 ) Heteroepitaxie statische Rekristallisation Haftzugfestigkeit Substrattemperatur Wärmebehandlung Partikelgröße quasiadiabatische Scherinstabilitäten thermische Effusivität Cold spray bonding mechanisms aluminum alumina (Al2O3) aluminum nitride (AlN) silicon carbide (SiC) silicon nitride (Si3N4) magnesium fluoride (MgF2) heteroepitaxy static recrystallization tensile bond strength substrate temperature heat treatment particle size adiabatic shear instabilities thermal effusivity ddc:620 Kaltspritzen Aluminium Aluminiumnitrid Magnesiumfluorid Heteroepitaxie Rekristallisation Wärmebehandlung Teilchengröße
9	Haftmechanismen kaltgasgespritzter Aluminiumschichten auf keramischen Oberflächen Drehmann, Rico 17 October 2017 (has links) Aluminiumschichten werden durch Kaltgasspritzen auf fünf verschiedene poly- und monokristalline keramische Werkstoffe (Al2O3 , AlN, SiC, Si3N4 , MgF2 ) appliziert. Dabei erfolgt eine Variation der Substrattemperatur und der Partikelgröße. Ausgewählte Proben werden einer nachfolgenden Wärmebehandlung unterzogen. Die im Fokus der Arbeit stehende Erforschung der an der Grenzfläche zwischen Aluminium und Keramik wirkenden Haftmechanismen erfolgt sowohl mithilfe einer mechanischen Charakterisierung (Stirnzugversuche) als auch durch verschiedene mikroskopische, spektroskopische und hochauflösende Methoden. Die Bewertung der Untersuchungsergebnisse zeigt, dass im Allgemeinen ein Anstieg der Haftzugfestigkeit mit steigender Substrat- und Wärmebehandlungstemperatur sowie mit zunehmender thermischer Effusivität des Substratwerkstoffs zu verzeichnen ist. Eine vergleichbare Auswirkung hat innerhalb bestimmter Grenzen die Zunahme der Partikelgröße. Mit der Heteroepitaxie wird neben der mechanischen Verklammerung ein weiterer wichtiger Haftmechanismus kaltgasgespritzter metallischer Schichten auf keramischen Substraten identifiziert. Die Ausbildung von quasiadiabatischen Scherbändern und statische Rekristallisationsprozesse wirken dabei als wichtige begleitende Mechanismen. Als Nachweis für heteroepitaktisches Wachstum ist die Existenz von (annähernd) parallelen, senkrecht oder geneigt zur Grenzfläche stehenden Ebenenpaaren, die eine geringe Gitterfehlanpassung aufweisen, zu werten. Der Vergleich mit PVD-Schichten zeigt, dass in Bezug auf die Orientierung von Gitterebenen verschiedene Mechanismen der Heteroepitaxie existieren, die von der atomaren Mobilität des Beschichtungswerkstoffs bestimmt werden. info:eu-repo/classification/ddc/620 ddc:620

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