Thermoelectric energy (TE) conversion can be used to create electricity from temperature gradients. Hence power can be generated from waste heat using TE materials, e.g. from the exhaust in automotives. This power in turn may lead to a reduction of gas consumption by reducing the alternator load on the engine. Because of the increasing demand and limited availability of energy sources, there is strong and renewed interest in advancing thermoelectric materials. Past research shows that the best TE materials are narrow band gap semiconductors composed of heavy elements, exhibiting a large Seebeck coefficient, S, combined with high electrical conductivity, σ, and low thermal conductivity, κ. Various research projects have been attempted during the past four years of my Ph.D. studies. These include the synthesis, crystal structure studies, electronic structure calculations and thermoelectric properties of transition metal oxides and thallium main group chalcogenides. Because of the good thermal stability, lack of sensitivity to the air, and non-toxicity, transition metal oxides are potential candidates for commercial thermoelectric applications. During the investigation of oxides for thermoelectric application, several interesting features of different transition metal oxides have been discovered: 1. A new quaternary layered transition-metal oxide, Na2Cu2TeO6, has been synthesized under air using stoichiometric mixtures of Na2CO3, CuO and TeO2. Na2Cu2TeO6 crystallizes in a new structure type, monoclinic space group C2/m with a = 5.7059(6) Å, b = 8.6751(9) Å, c = 5.9380(6) Å,  = 113.740(2)°, V = 269.05(5) Å3 and Z = 2, as determined by single crystal X-ray diffraction. The structure is composed of[Cu2TeO6] layers with the Na atoms located in the octahedral voids between the layers. Na2Cu2TeO6 is a green nonmetallic compound, in agreement with the electronic structure calculation and electrical resistance measurement. 2. An n-type narrow band gap semiconductor, LaMo8O14, exhibiting the high Seebeck coefficient of -94 μVK-1 at room temperature has been investigated. 3. Pb0.69Mo4O6 with a new modulated structure and stoichiometry was determined from single-crystal X-ray diffraction data. The compound crystallizes in the tetragonal super space group, P4/mbm(00g)00ss, with a = 9.6112(3) Å, c = 2.8411(1) Å, q = 0.25c*, which is different from the previously reported structure. As for the research of thermoelectric properties of thallium main group chalcogenides, three new ternary thallium selenides, Tl2.35Sb8.65Se14, Tl1.97Sb8.03Se13 and Tl2.04Bi7.96Se13, have been discovered. All three compounds crystallize in the same space group P21/m with different cell parameters, and in part different Wyckoff sites, hence different structure types. The three selenides with similar structures are composed of distorted edge-sharing (Sb,Bi)Se6 octahedra, while the distorted Tl/(Sb, Bi) sites are coordinated by 8 - 9 Se atoms. Electronic structure calculations and physical property measurements reveal they are semiconductors with high Seebeck coefficient but low electrical conductivity, and therefore not good thermoelectrics. On the other hand, our transport property measurements on the unoptimized Tl2SnTe3 sample show interesting thermoelectric properties of this known compound. Advanced thermoelectrics are dominated by antimonides and tellurides so far. The structures of the tellurides are mostly composed of NaCl-related motifs, hence do not contain any Te–Te bonds. All of the antimonide structures containing Sb–Sb bonds of various lengths are much more complex. The Sb atom substructures are Sb24– pairs in β-Zn4Sb3, linear Sb37– units in Yb14MnSb11, planar Sb44– rectangles in the skutterudites, e.g., LaFe3CoSb12, and Sb8 cubes interconnected via short Sb–Sb bonds to a three-dimensional network in Mo3Sb5Te2. The results of electronic structure calculations suggested that these interactions have a significant impact on the band gap size as well as on the effective mass around the Fermi level, which represent vital criteria for advanced thermoelectrics. The crystal structure and electronic structure investigation for the unique T net planar Sb–Sb interactions in Hf5Sb9 will be also presented, although Hf5Sb9 is metallic compound with poor thermoelectric performances.

Thermoelectric energy (TE) conversion can be used to create electricity from temperature gradients. Hence power can be generated from waste heat using TE materials, e.g. from the exhaust in automotives. This power in turn may lead to a reduction of gas consumption by reducing the alternator load on the engine. Because of the increasing demand and limited availability of energy sources, there is strong and renewed interest in advancing thermoelectric materials. Past research shows that the best TE materials are narrow band gap semiconductors composed of heavy elements, exhibiting a large Seebeck coefficient, S, combined with high electrical conductivity, σ, and low thermal conductivity, κ. Various research projects have been attempted during the past four years of my Ph.D. studies. These include the synthesis, crystal structure studies, electronic structure calculations and thermoelectric properties of transition metal oxides and thallium main group chalcogenides. Because of the good thermal stability, lack of sensitivity to the air, and non-toxicity, transition metal oxides are potential candidates for commercial thermoelectric applications. During the investigation of oxides for thermoelectric application, several interesting features of different transition metal oxides have been discovered: 1. A new quaternary layered transition-metal oxide, Na2Cu2TeO6, has been synthesized under air using stoichiometric mixtures of Na2CO3, CuO and TeO2. Na2Cu2TeO6 crystallizes in a new structure type, monoclinic space group C2/m with a = 5.7059(6) Å, b = 8.6751(9) Å, c = 5.9380(6) Å,  = 113.740(2)°, V = 269.05(5) Å3 and Z = 2, as determined by single crystal X-ray diffraction. The structure is composed of[Cu2TeO6] layers with the Na atoms located in the octahedral voids between the layers. Na2Cu2TeO6 is a green nonmetallic compound, in agreement with the electronic structure calculation and electrical resistance measurement. 2. An n-type narrow band gap semiconductor, LaMo8O14, exhibiting the high Seebeck coefficient of -94 μVK-1 at room temperature has been investigated. 3. Pb0.69Mo4O6 with a new modulated structure and stoichiometry was determined from single-crystal X-ray diffraction data. The compound crystallizes in the tetragonal super space group, P4/mbm(00g)00ss, with a = 9.6112(3) Å, c = 2.8411(1) Å, q = 0.25c*, which is different from the previously reported structure. As for the research of thermoelectric properties of thallium main group chalcogenides, three new ternary thallium selenides, Tl2.35Sb8.65Se14, Tl1.97Sb8.03Se13 and Tl2.04Bi7.96Se13, have been discovered. All three compounds crystallize in the same space group P21/m with different cell parameters, and in part different Wyckoff sites, hence different structure types. The three selenides with similar structures are composed of distorted edge-sharing (Sb,Bi)Se6 octahedra, while the distorted Tl/(Sb, Bi) sites are coordinated by 8 - 9 Se atoms. Electronic structure calculations and physical property measurements reveal they are semiconductors with high Seebeck coefficient but low electrical conductivity, and therefore not good thermoelectrics. On the other hand, our transport property measurements on the unoptimized Tl2SnTe3 sample show interesting thermoelectric properties of this known compound. Advanced thermoelectrics are dominated by antimonides and tellurides so far. The structures of the tellurides are mostly composed of NaCl-related motifs, hence do not contain any Te–Te bonds. All of the antimonide structures containing Sb–Sb bonds of various lengths are much more complex. The Sb atom substructures are Sb24– pairs in β-Zn4Sb3, linear Sb37– units in Yb14MnSb11, planar Sb44– rectangles in the skutterudites, e.g., LaFe3CoSb12, and Sb8 cubes interconnected via short Sb–Sb bonds to a three-dimensional network in Mo3Sb5Te2. The results of electronic structure calculations suggested that these interactions have a significant impact on the band gap size as well as on the effective mass around the Fermi level, which represent vital criteria for advanced thermoelectrics. The crystal structure and electronic structure investigation for the unique T net planar Sb–Sb interactions in Hf5Sb9 will be also presented, although Hf5Sb9 is metallic compound with poor thermoelectric performances.

This Ph.D. dissertation is focused on the investigation the structure of nitrile anion containing molecules and how the structure and reactivity of those molecules are affected by solvation and counter ion. A systematic approach was employed in this investigation, beginning with an evaluation of the accuracy of three commonly used model chemistries (Hartree-Fock (HF), Second-order Møller-Plesset perturbation theory (MP2), the Becke three-parameter exchange functional coupled with the nonlocal correlation functional of Lee, Yang, and Parr (B3LYP), all paired with the 6-31+G(d) basis set). A series of complexes of various cations with a number of explicit molecules of tetrahydrofuran (THF) and dimethyl ether (DME) were studied with these model chemistries and the results were compared, where possible, with experimental results. From this work, it was determined that the B3LYP models gave the most accurate results for the complexes in question. This work was then extended to acetonitrile anion containing complexes of solvent and cation. Based on the results of that extension, it was determined that cation size and charge density on the cation were critical factors in determining the structure of the acetonitrile anion molecule and in determining if the anion was metalated at the nitrogen or alpha-carbon position, with larger cations favoring carbon metalation and more significant deformation of the alpha-carbon from the expected sp2 hybridization. The final aspect of this dissertation was the determination of reaction coordinate energy profiles for a pair of substitution reactions involving nitrile anion containing cycloaliphatic molecules. The results of this study showed that, due to steric and kinetic factors, the axial products and transitions states associated with these reactions were favored, and that the degree of preference was kinetically controlled. / Bayer School of Natural and Environmental Sciences / Chemistry and Biochemistry / PhD / Dissertation

In thiswork we present the development of a method for the prediciton of finite temperature elastic and thermodynamic properties of cubic, non-magnetic unary and binary metals from first principles calculations. Vibrational, electronic and anharmonic contributions to the free energy are accounted for while magnetic effects are neglected. The method involves the construction of a free energy surface in volume/temperature space through the use of quasi-harmonic lattice dynamics. Additional strain energy calculations are performed and fit to the derived thermal expansion to present the temperature dependence of single crystal elastic constants. The methods are developed within the framework of density functional theory, lattice dynamics, and finite elasticity. The model is first developed for FCC aluminum and BCC tungsten which demonstrate the validity of the model as well as some of the limitations arising from the approximations made such as the effects of intrinsic anharmonicity. The same procedure is then applied to the B2 systems NiAl, RuAl and IrAl which are considred for high temperature applications. Overall there is excellent correlation between the calculated properties and experimentally tabulated values. Dynamic methods for the prediction of temperature dependent properties are also introduced and a groundwork is laid for future development of a robust method.

Transition-metal-centered monocyclic boron wheels are important candidates in the family of planar hypercoordinate species that show intriguing structure, stability and bonding situation. Through the detailed potential energy surface explorations of MB9 − (M Fe, Ru, Os) clusters, we introduce herein OsB9 − to be a new member in the transition-metalcentered borometallic molecular wheel gallery. Previously, FeB9 − and RuB9 − clusters were detected by photoelectron spectroscopy and the structures were reported to have singlet D9h symmetry. Our present results show that the global minimum for FeB9 − has a molecular wheel-like structure in triplet spin state with Cs symmetry, whereas its heavier homologues are singlet molecular wheels with D9h symmetry. Chemical bonding analyses show that RuB9 − and OsB9 − display a similar type of electronic structure, where the dual σ + π aromaticity, originated from three delocalized σ bonds and three delocalized π bonds, accounts for highly stable borometallic molecular wheels.

Neste trabalho utilizamos o método k.p na aproximação de função envelope, que é uma ferramenta muito útil para a solução de problemas relacionados a heteroestruturas em geral. Apresentamos a análise de heteroestruturas semicondutoras com confinamento espacial nas três direções de crescimentos {Quantum Dots}, utilizando o Hamiltoniano de Kane (8x8) em sua forma generalizada para descrever os estados do elétrons na banda de condução e na banda valência. Fazendo uso dessa ferramenta foram realizadas simulações de estruturas de banda em sistemas quase zero-dimensionais de InAs em matrizes de GaAs, em vários formatos e dimensões e sob diferentes estados de tensionamento. Um estudo sistemático de como as propriedades geométricas e as dimensões de um dado sistema podem influenciar os estados eletrônicos do mesmo foi também realizado, onde puderam ser confirmadas a presença de estados localizados e a sensibilidade do comportamento dos estados eletrônicos a estas propriedades. Pudemos observar um deslocamento para o vermelho no espectro de fotoluminescência com o aumento das dimensões do sistemas estudados. Foram ainda realizados cálculos de {Quantum Dots} de InN em matriz de GaN, que permitem explorar outras regiões do espectro eletromagnético e observamos o comportamento dos mesmos sob estados de tensionamentos diferentes. Com base nos autoestados do sistema foram calculados espectros de fotoluminescência para as heteroestruturas aqui estudadas, permitindo uma comparação direta com resultados experimentais. Como pode-se verificar o strain exerce importância primordial na determinação dos estados eletrônicos dos sistemas estudados e na presença do hidrostático pode-se verificar mudanças apreciáveis na resposta óptica do material, onde pode ser observado um deslocamento para o azul quando levado em consideração a presença de um hidrostático. / In this work, we use the k.p method in the approximation of the envelope function, that is a very useful tool, to the solution of heterostructure related problems. We present a semiconductor heterostructure analysis with confinement on the three directions (Quantum Dots), using the Kane Hamiltonian (8x8) on its generalized form to describe electron eigenstates on the conduction and valence bands. Using this tool, we have made band structure simulations in quasi zero-dimensional systems of InAs in GaAs matrices, in diverse shapes and dimensions and on different tension states. A systematic study of how the geometrical properties and dimensions of a given system could influence the electronic states was also done. There can be confirmed the presence of localized states and the sensitivity of the electronic states to these properties.We could observe a deviation to the red on the photoluminescence spectrum with the increase of the system dimensions. There were also made calculations on InN dots in a GaN matrix, which allow to explore other electromagnetic spectral regions and we have studied their behavior under different tension states. From the system eigenvalues, we calculated the photoluminescence spectra from the heterostructures studied here, allowing a direct comparison with experimental results. It can be verified that the strain is is extremely important on the determination of the electronic states of the studied systems in the presence of an hydrostatic strain. We could observe important modifications on the optical responseof the material, where there is a deviation to the blue when it is considered the presence of the hydrostatic strain.

Neste trabalho utilizamos o método k.p na aproximação de função envelope, que é uma ferramenta muito útil para a solução de problemas relacionados a heteroestruturas em geral. Apresentamos a análise de heteroestruturas semicondutoras com confinamento espacial nas três direções de crescimentos {Quantum Dots}, utilizando o Hamiltoniano de Kane (8x8) em sua forma generalizada para descrever os estados do elétrons na banda de condução e na banda valência. Fazendo uso dessa ferramenta foram realizadas simulações de estruturas de banda em sistemas quase zero-dimensionais de InAs em matrizes de GaAs, em vários formatos e dimensões e sob diferentes estados de tensionamento. Um estudo sistemático de como as propriedades geométricas e as dimensões de um dado sistema podem influenciar os estados eletrônicos do mesmo foi também realizado, onde puderam ser confirmadas a presença de estados localizados e a sensibilidade do comportamento dos estados eletrônicos a estas propriedades. Pudemos observar um deslocamento para o vermelho no espectro de fotoluminescência com o aumento das dimensões do sistemas estudados. Foram ainda realizados cálculos de {Quantum Dots} de InN em matriz de GaN, que permitem explorar outras regiões do espectro eletromagnético e observamos o comportamento dos mesmos sob estados de tensionamentos diferentes. Com base nos autoestados do sistema foram calculados espectros de fotoluminescência para as heteroestruturas aqui estudadas, permitindo uma comparação direta com resultados experimentais. Como pode-se verificar o strain exerce importância primordial na determinação dos estados eletrônicos dos sistemas estudados e na presença do hidrostático pode-se verificar mudanças apreciáveis na resposta óptica do material, onde pode ser observado um deslocamento para o azul quando levado em consideração a presença de um hidrostático. / In this work, we use the k.p method in the approximation of the envelope function, that is a very useful tool, to the solution of heterostructure related problems. We present a semiconductor heterostructure analysis with confinement on the three directions (Quantum Dots), using the Kane Hamiltonian (8x8) on its generalized form to describe electron eigenstates on the conduction and valence bands. Using this tool, we have made band structure simulations in quasi zero-dimensional systems of InAs in GaAs matrices, in diverse shapes and dimensions and on different tension states. A systematic study of how the geometrical properties and dimensions of a given system could influence the electronic states was also done. There can be confirmed the presence of localized states and the sensitivity of the electronic states to these properties.We could observe a deviation to the red on the photoluminescence spectrum with the increase of the system dimensions. There were also made calculations on InN dots in a GaN matrix, which allow to explore other electromagnetic spectral regions and we have studied their behavior under different tension states. From the system eigenvalues, we calculated the photoluminescence spectra from the heterostructures studied here, allowing a direct comparison with experimental results. It can be verified that the strain is is extremely important on the determination of the electronic states of the studied systems in the presence of an hydrostatic strain. We could observe important modifications on the optical responseof the material, where there is a deviation to the blue when it is considered the presence of the hydrostatic strain.

Orientador: Augusto Batagin Neto / Resumo: Compostos baseados em carbono têm se mostrado materiais de grande interesse tecnológico, principalmente devido à sua alta flexibilidade de síntese, baixo custo relativo e propriedades únicas. Graças a isto, tem-se observado um número crescente de trabalhos teóricos e experimentais acerca da compreensão de características básicas destes sistemas e a proposição de novos compostos com propriedades otimizadas para aplicações específicas. No presente trabalho são apresentados estudos teóricos acerca de dois temas relacionados à reatividade e propriedades estruturais de materiais orgânicos e baseados em carbono: i) estudo e análise de reatividade de subunidades de melanina; e ii) estudo estrutural e de reatividade de nanoflocos (ou nanoflakes em inglês) de carbono para aplicações em sensores químicos. Melaninas são pigmentos naturais com propriedades biológicas e eletrônicas que as tornam promissoras para aplicações bio-eletrônicas. Contudo não há ainda entendimento pleno acerca de sua estrutura macromolecular e conexão entre suas unidades básicas. Neste estudo cálculos de estrutura eletrônica, combinados com análise de reatividade, foram realizados para melhor compreender os processos de oligomerização. Os resultados obtidos permitem propor as estruturas diméricas mais prováveis e identificar reações que ocorrem no processo de síntese de melanina. Pode-se também estabelecer uma ordem de dominância de reatividade entre as subunidades e identificar núcleos de polimerização, o que po... (Resumo completo, clicar acesso eletrônico abaixo) / Abstract: Carbon-based materials have been considered compounds of great technological interest, manly due to their flexibility of synthesis, relative low cost and unique opto-electronic properties. A crescent number of theoretical and experimental studies has been reported regarding the comprehension of basic features of these materials and the proposition of new compounds with optimized properties. This thesis presents studies about the reactivity and structural properties of carbon based and organic materials according to two themes: i) reactivity study and oligomerization analysis of melanin; and ii) reactivity and structural analysis of carbon nanoflakes and their application as chemical sensors. Melanins are natural pigments with biological and electrical properties that turn them promising compounds for bioelectronic applications. However, despite of their promising properties, up to date the macromolecular structure of melanin and the connection between its basic units have not been understood in detail. In this study, electronic structure calculations, combined with reactivity analysis were conducted to better understand the oligomerization process of this compound. The obtained results allow us to propose the most probable dimeric structures and identify relevant reactions that occur during melanin oligomerization process. Furthermore, it was possible to observe a dominance order in the reactivity of the subunits and identify possible nucleation centers of melanin polymerizat... (Complete abstract click electronic access below) / Mestre

No description available.