Die Diplomarbeit mit dem Thema: 'Konzeption und Herstellung von Systemdemonstratoren für miniaturisierte Im-Ohr-Lautsprecher mit drahtlosen Kommunikationsschnittstellen' konzentriert sich auf die Auslegung einer Schaltung eines neuartigen Lautsprechers, welche auf dem Prinzip der NED-Aktoren ('Nanoskaliger elektrostatischer Antrieb') arbeiten. Des Weiteren werden Gehäuse für die Im-Ohr-Anwendung als auch die Freifeldanwendung entwickelt.:Symbolverzeichnis Abkürzungsverzeichnis 1 Einleitung 2 Stand der Technik 2.1 Im-Ohr-Lautsprecher 2.2 Drahtlose Kommunikation 2.3 Kommerzielle Piezotreiber 3 Anforderungen an den Systemdemonstrator 4 Chipaufnahme 4.1 Anforderung 4.2 Konzeption und Umsetzung 5 Drahtlose Kommunikation 5.1 Anforderung 5.2 Konzept 5.3 Umsetzung 6 Verstärker 6.1 Anforderung 6.2 Konzeption und Umsetzung 6.2.1 Validierung des DRV2700 6.2.2 Thermisches Management der Verstärkerschaltung 6.3 Modellierung des Gehäuses für die Elektronik 7 Im-Ohr-Demonstrator 7.1 Anforderung 7.2 Konzeption und Umsetzung 8 Horn-Demonstrator 8.1 Anforderung 8.2 Konzeption und Umsetzung 9 Ergebnisse 9.1 Chipaufnahme 9.2 Verstärker 9.3 Gehäuse für Elektronik 9.4 Im-Ohr-Lautsprecher 9.5 Akustisches Horn 10 Realisierung mittels Entwicklungsplatine 11 Diskussion und Ausblick 12 Zusammenfassung Literatur Selbstständigkeitserklärung Anhang

La lutte contre la pollution atmosphérique est un enjeu majeur de ce XXIème siècle. Le centre deMarcoule du CEA développe différents procédés de traitement de déchets issus du nucléaire parincinération/vitrification qui génèrent des gaz de combustion nécessitant un traitement. Pour cefaire, le CEA utilise la précipitation électrostatique, technique de traitement d’effluents gazeuxemployée pour la filtration des particules fines.Cette thèse est consacrée à l’optimisation des performances d’un électrofiltre alimenté parhautes puissances pulsées. L’un des objectifs est de dimensionner et réaliser une nouvelle électrodeémissive adaptée au développement d’un nouveau procédé d’incinération. Cette nouvelle électrodecouplée à son alimentation HT, dont les paramètres électriques ont été optimisés, ont permisd’obtenir des rendements de filtration maximum durant des temps de fonctionnement enadéquation avec des applications industrielles. L’impact des caractéristiques physico-chimiques despoussières sur l’efficacité de filtration a été analysé.Une étude spécifique a également porté sur l’évolution des différents régimes de décharge quise développent dans l’électrofiltre de manière à identifier les phénomènes responsables de la chuted’efficacité du procédé. Les bénéfices de l’électrode émissive et d’un générateur hybride, combinantdes impulsions de tension superposées à un fond continu, ont clairement été mis en évidence parleurs effets sur l’initiation des "back corona" et par conséquent sur la durée de fonctionnement àrendement optimal. / The fight against air pollution is a major issue in the twenty-first century. The center of Marcouleof CEA develops different waste treatment processes by incineration / vitrification that generatecombustion gases requiring treatment. To do this, the CEA uses the electrostatic precipitation, atechnical waste gas treatment employed for thin particles filtration.This thesis is dedicated to optimizing the performance of an electrofilter supplied by high pulsedpowered. One of the goals is to size and achieve a new emissive electrode adapted to thedevelopment of a new incineration process. This new electrode coupled to its High Voltage (HV)power supply, which electrical parameters were optimized, allowed to obtain maximum filtrationefficiency during operating times in line with industrial applications. The impact of thephysicochemical characteristics of dusts on the filtration efficiency was analyzed.A specific study also focused on the evolution of different discharge conditions that develop inthe electrofilter to identify the phenomena responsible for the process efficiency fall. The intake ofthe emissive electrode and a hybrid generator, combining a continuous background voltagesuperimposed with impulses, has clearly been demonstrated by their effects on back coronainitiation and therefore on the optimal efficiency operation duration.

No description available.

<p>   The arrival of Si transistors and integrated circuit technology more than half a century ago made vacuum electronic technology almost extinct. Today, there are only a few niche applications for vacuum electronics. The main issues with this technology are its high voltage requirement and high-power consumption, difficult and costly fabrication technology, lack of integration capability, and poor reliability characteristics. Some of these issues may be addressed by going to nm scale fabrication that did not exist 60 years ago. Other problems such as reliability and lack of integration capability require alternative solutions to what has been proposed so far. Vacuum is the ultimate conduction media allowing electrons to reach the speed of light without any scattering. Consequently, a vacuum transistor, if designed correctly, can achieve THz frequency performance, while delivering Watt-level powers. No semiconductor technology can compete with vacuum technology to deliver such performance. </p> <p>In this work, novel methods for implementing nanoscale field emitter arrays used in vacuum electronics are proposed. Gated and ungated field emitters are fabricated with self-assembly technology and electron beam lithography. Different anisotropic dry etching recipes are developed to achieve emitters with different sharpness and aspect ratios. Our methods lead to field emitter array operation under low voltages (less than 20 V) and high current densities (around 50 A/cm2) using self-assembly and soft film anode-cathode isolator, and field emitter devices with ~4.5 A/cm2 current density with a turn-on voltage less than 50 V using electron beam lithography and oxide anode-cathode isolator. </p> <p>Making reliable field emitter devices is challenging. Due to Joule heating, ion bombardment, and geometrical variations for each tip in the field emitter arrays, emission current becomes nonuniform across the array. Sharper tips emit at a higher rate and eventually, the heat generated at the tip deforms the tips leading to electron emission at a lower rate. With ultra-low doped emitters, the current of each tip is limited to a few nano-amperes leading to a negligible current fluctuation at the tips. </p> <p>Our fabricated ultra-low doped devices with both self-assembly and electron beam lithography techniques presented constant emission current with almost no change over 24 hours of continuous operation. Such excellent reliability characteristics in vacuum field emitter devices have not been demonstrated to date.</p> <p>The screening effect in close-packed field emitter arrays which occurs by nearby conductive or semiconductive objects is thoroughly investigated and different solutions are proposed to reduce this effect between the emitters. Simulation studies using Sentaurus TCAD, MATLAB, and COMSOL Multiphysics simulators facilitated the design and optimization of gated and ungated field emitter arrays. These studies included the effect of sharpness, the distance between neighboring emitters, enclosing the emitters by a Si block around the emitters as well as anode-cathode separation on the electrical characterization of field emitter arrays. </p> <p>The optimum location and operating voltages which lead to a maximum gate control and emitter current density are also studied for gated field emitter arrays. Instead of individually gating each field emitter, it was found that controlling the emission of a sub-array with a metallic all-around gate is more efficient and it leads to higher current densities. Guided by simulations, gated field emitter arrays with 5×5 and 2×2 sub-arrays are developed. In terms of strength of the grid control (transconductance), turn-on voltage, maximum emission current, and field intensification factor, the device with the 2×2 sub-array was superior to the one with the 5×5 sub-array. The VFET with 5×5 sub-arrays achieved a higher current density due to a larger number of field emitters packed per active emission area. Finally, plans to further improve the technology and transitioning into the fabrication of vacuum integrated circuits are discussed.</p> <p>  </p>

No description available.

Beryllium-7 (Be-7) only decays by electron capture into lithium-7 (Li-7) with a half life of 53 days. We study the effect of ionization on this decay rate. We do so by trapping a Be-7 ion plasma in a cylindrical Malmberg-Penning trap and measuring Be-7 and Li-7 concentrations as functions of time by using Fourier transform ion cyclotron resonance mass spectrometry (FTICR-MS). We have simulated these signals in a 2-dimensional electrostatic particle-in-cell (PIC) code. The two spectrum peaks merge at high ion densities whereas at low ion densities they can be resolved. The merged peak shifts linearly according to the relative abundances of these species. We have also simulated singly-ionized beryllium-7 hydride (BeH+) and Li-7 ion plasmas at high densities. These two separate peaks shift according to their relative abundances. We describe an analytical model that explains how these peaks shift.

Kvantkemiska studier av reaktiviteten hos guldnanopartiklar Au3-Au11 och Au13 mot O- centrerade molekylradikaler OH , OOH , OCH3   och H2O undersöks. Olika molekylära ytegenskaper tas med i beräkningen, elektrostatiska ytpotentialen, den genomsnittliga lokala joniseringsenergin, electron attachment energy och spinndensiteten (VS(r), IS(r), TS(r), ES(r) och S(r)). De erhållna resultaten gäller slutna och öppna skalsystem. Där system med slutna skal bildas från växelverkan mellan en guldklusterradikal och en fri radikal, och system med öppna skal bildas från växelverkan mellan ett jämnt antal guldatomer med en fri radikal. För system med slutna skal Aux-R (där x = 3, 5, 7, 9 eller 11 och R är en O-centrerad radikal) finns det en övergripande trend av bindningsenergin gentemot ES(r), vilket återspeglar elektrofilictiten hos guldnanopartiklar. Multivariata modeller visar vidare hur de olika parametrarna korrelerar gentemot varandra för system med slutna skal.För strukturerna Aux-R (där x=3-11) medl ägst bindningsenergi, dvs. inklusive både slutna och öppna skalsystem, är den tydligaste trenden bindningsenergi vs minimum i ES(r) och parametern TS(r). Vid jämförelse av resultaten av interaktionerna med de fria radikalerna med H2O är trenden alltid tydligast för H2O. I linje med tidigare studier finns det även en korrelation av bindningsenergierna med VS,max och ES,min för H2O. Slutligen sträcker sig trenden med bindningsenergi vs ES,min vidare till systemet som innehåller den icke-plana Au13-strukturen. Denna studie visar kopplingen mellan reaktiviteten hos guldnanopartiklar mot fria radikaler till den lokala ES(r), samtidigt som bidraget från andra ytegenskaper visas. Detta kan vara av betydelse för fortsatta studier kring naturen av interaktioner av guldnanopartiklar. / The nature of gold nanoparticle interactions towards molecular radicals are investigated. Quantum chemical studies of the reactivity of gold nanoparticles Au3-Au11 and Au13 towards O-centered molecular radicals OH , OOH , OCH3   and H2O are performed. Different molecular surface properties are taken into account; the surface electrostatic potential, average local ionization energy, electron attachment energy and spin density (VS(r), IS(r), TS(r), ES(r) and S(r)). The obtained results concern closed and open shell systems. Where closed shell systems are formed from the interaction of a radical gold cluster and a free radical, and open shell systems are formed from the interaction of an even number of gold atoms with a free radical. For closed shell systems Aux-R (where x = 3, 5, 7, 9 or 11 and R is an O-centered radical) there is an overall trend of the binding energy vs the local electron attachment energy, reflecting the electrophilicity of the gold nanoparticles. Multivariate plots further show how the different parameters correlate together for closed shell systems. Looking at the lowest energy structures Aux-R (where x = 3-11), i.e. including closed and open shell systems, the clearest trend is of binding energy vs minima in the local electron attachment energy ES,min and the TS(r) parameter. When comparing the results of the interactions with the free radicals with H2O, the trend is always clearest for H2O. Concurring with previous trends, there is a correlation of the binding energies with VS,max and ES,min for H2O. Lastly, the trend of Binding energy vs ES,min further extends to systems containing the non-planar Au13 structure. This study extends the reactivity of gold nanoparticles towards free radicals to the local electron attachment energy, while showing the contribution of other surface properties. This might be of importance for further studies concerning the nature of gold nanoparticle interactions.

Electrostatic Discharge (ESD), an event of a sudden transfer of electrons between two bodies at different potentials, happens commonly throughout nature. When such even occurs on integrated circuits (ICs), ICs will be damaged and failures result. As the evolution of semiconductor technologies, increasing usage of automated equipments and the emerging of more and more complex circuit applications, ICs are more sensitive to ESD strikes. Main ESD events occurring in semiconductor industry have been standardized as human body model (HBM), machine model (MM), charged device model (CDM) and international electrotechnical commission model (IEC) for control, monitor and test. In additional to the environmental control of ESD events during manufacturing, shipping and assembly, incorporating on-chip ESD protection circuits inside ICs is another effective solution to reduce the ESD-induced damage. This dissertation presents design, characterization, integration and compact modeling of novel silicon controlled rectifier (SCR)-based devices for on-chip ESD protection. The SCR-based device with a snapback characteristic has long been used to form a VSS-based protection scheme for on-chip ESD protection over a broad rang of technologies because of its low on-resistance, high failure current and the best area efficiency. The ESD design window of the snapback device is defined by the maximum power supply voltage as the low edge and the minimum internal circuitry breakdown voltage as the high edge. The downscaling of semiconductor technology keeps on squeezing the design window of on-chip ESD protection. For the submicron process and below, the turn-on voltage and sustain voltage of ESD protection cell should be lower than 10 V and higher than 5 V, respectively, to avoid core circuit damages and latch-up issue. This presents a big challenge to device/circuit engineers. Meanwhile, the high voltage technologies push the design window to another tough range whose sustain voltage, 45 V for instance, is hard for most snapback ESD devices to reach. Based on the in-depth elaborating on the principle of SCR-based devices, this dissertation first presents a novel unassisted, low trigger- and high holding-voltage SCR (uSCR) which can fit into the aforesaid ESD design window without involving any extra assistant circuitry to realize an area-efficient on-chip ESD protection for low voltage applications. The on-chip integration case is studied to verify the protection effectiveness of the design. Subsequently, this dissertation illustrate the development of a new high holding current SCR (HHC-SCR) device for high voltage ESD protection with increasing the sustain current, not the sustain voltage, of the SCR device to the latchup-immune level to avoid sacrificing the ESD protection robustness of the device. The ESD protection cells have been designed either by using technology computer aided design (TCAD) tools or through trial-and-error iterations, which is cost- or time-consuming or both. Also, the interaction of ESD protection cells and core circuits need to be identified and minimized at pre-silicon stage. It is highly desired to design and evaluate the ESD protection cell using simulation program with integrated circuit emphasis (SPICE)-like circuit simulation by employing compact models in circuit simulators. And the compact model also need to predict the response of ESD protection cells to very fast transient ESD events such as CDM event since it is a major ESD failure mode. The compact model for SCR-based device is not widely available. This dissertation develops a macromodeling approach to build a comprehensive SCR compact model for CDM ESD simulation of complete I/O circuit. This modeling approach offers simplicity, wide availability and compatibility with most commercial simulators by taking advantage of using the advanced BJT model, Vertical Bipolar Inter-Company (VBIC) model. SPICE Gummel-Poon (SGP) model has served the ICs industry well for over 20 years while it is not sufficiently accurate when using SGP model to build a compact model for ESD protection SCR. This dissertation seeks to compare the difference of SCR compact model built by using VBIC and conventional SGP in order to point out the important features of VBIC model for building an accurate and easy-CAD implement SCR model and explain why from device physics and model theory perspectives.

The first objective of this dissertation is to present hybrid numerical-analytical approaches and reduced-order models to simulate microelectromechanical systems (MEMS) in multi-physics fields. These include electric actuation (AC and DC), squeeze-film damping, thermoelastic damping, and structural forces. The second objective is to investigate MEMS phenomena, such as squeeze-film damping and dynamic pull-in, and use the latter to design a novel RF-MEMS switch. In the first part of the dissertation, we introduce a new approach to the modeling and simulation of flexible microstructures under the coupled effects of squeeze-film damping, electrostatic actuation, and mechanical forces. The new approach utilizes the compressible Reynolds equation coupled with the equation governing the plate deflection. The model accounts for the slip condition of the flow at very low pressures. Perturbation methods are used to derive an analytical expression for the pressure distribution in terms of the structural mode shapes. This expression is substituted into the plate equation, which is solved in turn using a finite-element method for the structural mode shapes, the pressure distributions, the natural frequencies, and the quality factors. We apply the new approach to a variety of rectangular and circular plates and present the final expressions for the pressure distributions and quality factors. We extend the approach to microplates actuated by large electrostatic forces. For this case, we present a low-order model, which reduces significantly the cost of simulation. The model utilizes the nonlinear Euler-Bernoulli beam equation, the von K´arm´an plate equations, and the compressible Reynolds equation. The second topic of the dissertation is thermoelastic damping. We present a model and analytical expressions for thermoelastic damping in microplates. We solve the heat equation for the thermal flux across the microplate, in terms of the structural mode shapes, and hence decouple the thermal equation from the plate equation. We utilize a perturbation method to derive an analytical expression for the quality factor of a microplate with general boundary conditions under electrostatic loading and residual stresses in terms of its structural mode shapes. We present results for microplates with various boundary conditions. In the final part of the dissertation, we present a dynamic analysis and simulation of MEMS resonators and novel RF MEMS switches employing resonant microbeams. We first study microbeams excited near their fundamental natural frequencies (primary-resonance excitation). We investigate the dynamic pull-in instability and formulate safety criteria for the design of MEMS sensors and RF filters. We also utilize this phenomenon to design a low-voltage RF MEMS switch actuated with a combined DC and AC loading. Then, we simulate the dynamics of microbeams excited near half their fundamental natural frequencies (superharmonic excitation) and twice their fundamental natural frequencies (subharmonic excitation). For the superharmonic case, we present results showing the effect of varying the DC bias, the damping, and the AC excitation amplitude on the frequency-response curves. For the subharmonic case, we show that if the magnitude of the AC forcing exceeds the threshold activating the subharmonic resonance, all frequency-response curves will reach pull-in. / Ph. D.

No description available.