Thesis (Ph.D.) -- McMaster University, 1997. / Includes bibliographical references (leaves [100]-105. Also available via World Wide Web.

Efficiency droop is a critical issue for the Group III-nitride based light-emitting diodes (LEDs) to be competitive in the general lighting application. Carrier spill-over have been suggested as an origin of the efficiency droop, and an InAlN electron-blocking layer (EBL) is suggested as a replacement of the conventional AlGaN EBL for improved performance of LED. Optimum growth condition of InAlN layer was developed, and high quality InAlN layer was grown by using metalorganic chemical vapor deposition (MOCVD). A LED structure employing an InAlN EBL was grown and its efficiency droop performance was compared with a LED with an AlGaN EBL. Characterization results suggested that the InAlN EBL delivers more effective electron blocking over AlGaN EBL. Hole-injection performance of the InAlN EBL was examined by growing and testing a series of LEDs with different InAlN EBL thickness. Analysis results by using extended quantum efficiency model shows that further improvement in the performance of LED requires better hole-injection performance of the InAlN EBL. Advanced EBL structures such as strain-engineered InAlN EBL and compositionally-graded InAlN EBLs for the delivery of higher hole-injection efficiency were also grown and tested.

Molecular beam epitaxy (MBE) grown metal has been a renewed area of interest recently in order to achieve high quality metal films or nanostructures for plasmonics. Recently MBE grown silver films have been shown to possess optical constants closer to that of intrinsic silver leading to lower losses and thus allowing for higher quality plasmonics. MBE has also been used to grow silver nanocrystals and indium droplets, or islands, for plasmonics. These self-assembled nanostructures can be grown in close proximity to quantum confined structures such as InAs/GaAs quantum dots or InGaAs/GaAs quantum wells in a single process, without post-processing and fabrication, allowing for increased plasmonic enhancement due to the improved interface between the semiconductor and plasmonic structures.In this dissertation, widely tunable plasmonic resonances of indium islands will be discussed and plasmonic enhancement results will be presented and compared to those of nanoantennas constructed from standard fabrication processes. The coupling between near-surface quantum confined structures, both fabricated and self-assembled, will be compared to the coupling in typical dielectric cavities, such as photonic crystal nanobeams. Beyond the plasmonic possibilities of indium islands, indium becomes superconducting at 3.4 K. With the proximity effect allowing for electrons in materials in contact with a superconductor to occupy a superconducting like state, allowing for the possibility for a hybrid superconductor/semiconductor optical source. The observation of superconductivity in indium islands will be presented and considerations for a superconductor/semiconductor source will be discussed.

published_or_final_version / Physics / Doctoral / Doctor of Philosophy

published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy

published_or_final_version / abstract / Physics / Master / Master of Philosophy

published_or_final_version / abstract / Physics / Master / Master of Philosophy

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No description available.

This dissertation focuses on two areas of garnet porphyroblast crystallization that have until now remained largely uninvestigated: epitaxial nucleation of garnet porphyroblasts and yttrium and rare earth (Y+REE) uptake in metamorphic garnet. The mechanism of epitaxial nucleation is explored as a step towards determining which aspects of interfaces are significant to interfacial energies and nucleation rates. Garnet from the aureole of the Vedrette di Ries tonalite, Eastern Alps, shows a clear case of epitaxial nucleation in which garnet nucleated on biotite with (110)grt || (001)bt with [100]grt || [100]bt. The occurrence is remarkable for the clear genetic relationships revealed by the microstructures and for its preservation of the mica substrate, which allows unambiguous determination of the coincident lattice planes and directions involved in the epitaxy. Not all epitaxial nucleation is conspicuous; to increase the ability to document epitaxial relationships between garnet and micas, I develop and apply a method for determining whether evidence for epitaxial nucleation of garnet is present in porphyroblasts containing an included fabric. Although the magnitude of uncertainties in orientation measurements for garnets from Passo del Sole (Switzerland), the Nevado Filabride Complex (Spain), and Harpswell Neck (USA) preclude definitive identification of epitaxial relationships, the method has potential to become a viable technique for creating an inventory of instances and orientations of epitaxial nucleation with appropriate sample selection. Using lattice-dynamics simulations, I explore the most commonly documented epitaxial relationship, (110)grt || (001)ms. The range of interfacial energies resulting from variations in the intracrystalline layer within garnet at the interface, the initial atomic arrangement at the interface, and the rotational orientation of the garnet structure relative to the muscovite structure shows that the intracrystalline layer within garnet has the greatest effect on interfacial energy. A complete understanding of the role of intergranular diffusion for yttrium and rare-earth-element uptake in porphyroblastic garnet is critical because the complexities of Y+REE zoning in garnets and the mechanisms of Y+REE uptake have implications for petrologic interpretations and garnet-based geochronology. Y+REE distributions in garnets from the Picuris Mountains (USA), Passo del Sole (USA), and the Franciscan Complex (USA) imply diverse origins linked to differing degrees of mobility of these elements through the intergranular medium during garnet growth.