Thesis (Ph. D.)--University of Washington, 2003. / Vita. Includes bibliographical references (p. 232-243).

Lead zirconate titantate (PZT) is an electroceramic material with many important technological applications in sensing and computer memory. Some of these applications require the PZT based devices to operate in radiation fields where they will be exposed to a high flux of energetic, heavy and light, charged and uncharged particles. The risk to any device exposed to ionizing radiation is the accumulation of displacement and ionization damage. Significant damage accumulation over time can lead to property drifts and, in some cases, failure of the device to perform properly. The goal of the undertaking recounted in this dissertation was to study changes in the ferroelectric properties of PZT exposed to the neutron field of a research nuclear reactor and to help develop an understanding for the type of radiation induced defects that play a dominant role in the degradation process. Thin film PZT capacitors were prepared using a wet chemical technique. The capacitors were then irradiated in a 1 MW TRIGA research nuclear reactor at the University of Texas at Austin up to a maximum 1 MeV equivalent neutron flux of 5.2 x 10¹⁵ cm⁻². Following irradiation, electronic characterization of polarization-electric field hysteresis loops, first order reversal curves, and small-signal permittivity were performed to ascertain tendencies between irradiation dose and ferroelectric properties. The measurements indicate a drop in remanent polarization, a loss of domain wall mobility, shifts in local switching fields and the formation of dipolar defects. These effects are all attributed to the introduction of defects into the material through displacement damage cascades. Numerical models of the damage cascades were performed to determine the displacement concentration. Comparison of those values and the primary recoil spectrum with typical survival rates found in the literature suggest that both free point defects as well as defect clusters are produced in comparable if not larger concentrations. It is proposed that defect clusters play a more significant role in ferroelectric property change than previously believed. / text

The relatively recent discovery of the giant electrocaloric effect in ferroelectric ceramics may lead to new solid state cooling technologies that are energy efficient, reliable, portable, and environmentally friendly. This phenomenon, along with many other novel field-coupled properties of ferroelectrics, such as piezoelectricity, pyroelectricity, the electro-optic effect, phase changes, and polarization switching, make these materials useful for a wide range of technological applications including sensors, ultrasound, infrared cameras, sonar, diesel engine fuel injectors, ferroelectric random access memory, electro-optic modulators, vibration control, and electrocaloric cooling devices. Most of world’s current cooling and refrigeration technology is based upon the vapor-compression cycle of a refrigerant. Refrigeration systems that are based on this technology are bulky, require moving parts in the compressor and some of them have a less than optimal environmental impact. Thin film devices that utilize the electrocaloric effect could have a significant impact on refrigeration, heat pumps, air conditioning, energy scavenging, and computer cooling systems. Especially for the latter ones, the fan-based solutions are not likely to be able to keep up with the increases in computing power and the resulting current densities in integrated circuits. The ability to make quantitative predictions of the behavior of ferroelectric structures is of significant importance given the experimental efforts on the synthesis of barium titanate nanodots, nanorods, nanowires, and nanotubes, and lead zirconate titanate (PZT) thin films, and nanoparticles, and the potential for technological applications of these structures. The research contained herein implements a full thermo-electro-mechanical continuum framework and numerical methods based on phase-field modeling to study the domain and phase structure evolution associated with the electrocaloric effect in barium titanate ferroelectric nanodots. / text

No description available.

Thesis (Ph.D.)--University of Nebraska-Lincoln, 2008. / Title from title screen (site viewed July 22, 2008). PDF text: ix, 169 p. : ill. (some col.) ; 8 Mb. UMI publication number: AAT 3299685. Includes bibliographical references. Also available in microfilm and microfiche formats.

Thesis (M.Sc.)--City University of Hong Kong, 2005. / At head of title: City University of Hong Kong, Department of Physics and Materials Science, Master of Science in materials engineering & nanotechnology dissertation. Title from title screen (viewed on Sept. 4, 2006) Includes bibliographical references.

Thesis (M.Sc.)--City University of Hong Kong, 2005. / At head of title: City University of Hong Kong, Department of Physics and Materials Science, Master of Science in materials engineering & nanotechnology dissertation. Title from title screen (viewed on Sept. 4, 2006) Includes bibliographical references.

Submitted by IDALCI CRUVINEL DOS REIS null (idalcireis@yahoo.com.br) on 2016-01-27T19:12:31Z No. of bitstreams: 1 Tese_Idalci Cruvinel dos Reis.pdf: 11534800 bytes, checksum: bebcb1750beb5d5066bead83c37b196a (MD5) / Approved for entry into archive by Juliano Benedito Ferreira (julianoferreira@reitoria.unesp.br) on 2016-01-28T18:47:45Z (GMT) No. of bitstreams: 1 reis_ic_dr_ilha.pdf: 11534800 bytes, checksum: bebcb1750beb5d5066bead83c37b196a (MD5) / Made available in DSpace on 2016-01-28T18:47:45Z (GMT). No. of bitstreams: 1 reis_ic_dr_ilha.pdf: 11534800 bytes, checksum: bebcb1750beb5d5066bead83c37b196a (MD5) Previous issue date: 2015-12-18 / Fundação de Amparo à Pesquisa do Estado de Goiás (FAPEG) / Neste trabalho, as características estruturais, microestruturais, ferroelétricas e dielétricas de materiais ferroelétricos com estruturas laminares de bismuto (BLSFs), conhecidos como Aurivillius, foram investigadas. Os sistemas objetos de estudo foram compostos bicamadas (SrBi2Nb2O9, SrBi2Ta2O9, BaBi2Nb2O9) e tricamadas (Bi4Ti3O12), onde foi considerada a dopagem do sítio A da estrutura com lantânio (La3+). As propriedades físicas, portanto, foram investigadas considerando a influência do La3+ para várias concentrações. As cerâmicas foram preparadas pelo método de reação de estado sólido com sinterização em temperaturas acima de 1000 °C, para todos os casos. Para o estudo das propriedades estruturais e microestruturais, foram utilizadas as técnicas de difração de raios-x, Espectroscopia Raman, Microscopia Eletrônica de Varredura (MEV) e Espectrometria de Dispersão de Energia (EDS). As propriedades ferroelétricas e dielétricas foram investigadas a partir da dependência da polarização com o campo elétrico e resposta dielétrica com temperatura, respectivamente. Fases puras foram verificadas para todos os sistemas e analisadas com refinamento pelo método de Reitveld. Os resultados apresentaram indícios de alterações nas estruturas das cerâmicas, o que pode ser associado à influência do lantânio na estrutura. Essas alterações foram confirmadas nas medidas de MEV, onde foi possível observar um aumento significativo dos tamanhos médios dos grãos com aumento do dopante para os sistemas bicamadas e uma redução para o sistema tri-camadas. As medidas de Raman identificaram os modos ativos característicos dos sistemas Aurivillius para todos os sistemas estudados, com influência do conteúdo de lantânio na estrutura. As propriedades ferroelétricas foram confirmadas para todos os casos com uma pequena contribuição da condutividade, que pode ser a causa da obtenção de ciclos de histerese aquém da saturação para alguns casos. Em particular, o sistema SrBi2Ta2O9 revelou ciclos bem característicos e definidos, enquanto o sistema BaBi2Nb2O9 mostrou o comportamento esperado para os ferroelétricos relaxores. Picos bem definidos foram observados na resposta dielétrica para todos os casos, observando uma forte influência do conteúdo de dopante nos parâmetros dielétricos. As características da transição de fases revelam comportamentos associados tanto a um ferroelétrico normal quanto ao comportamento típico de relaxores. Este efeito foi discutido detalhadamente para cada caso. É importante destacar que, para todos os casos, baixos valores de perdas dielétricas foram obtidos, muito abaixo dos reportados na literatura para sistemas Aurivillius. Diante destes resultados, os sistemas aqui estudados são fortes candidatos para aplicações tecnológicas. / In this work the structural, microstructural, ferroelectric and dielectric characteristics of ferroelectric materials with bismuth layer structures (BLSFs), known as Aurivillius, were investigated. The studied materials were based on bi-layers (SrBi2Nb2O9, SrBi2Ta2O9, BaBi2Nb2O9) and tri-layer (Bi4Ti3O12) systems, where the lanthanum (La3+) doping in the A-site of the structure has been considered. The physical properties where, therefore, investigated considering the influence of La3+ at various concentrations. The ceramics were prepared by the solid state reaction method for temperatures above 1000 °C for all the cases. For the investigation of the structural and microstructural properties the x-ray diffraction technique, as well as Raman spectroscopy, Scanning Electron Microscopy (SEM) and Energy Dispersive of Spectrometry (EDS) were used. The ferroelectric and dielectric properties were investigated from the electric field dependence of the polarization and dielectric response with temperature, respectively. Pure phases were found for all the systems and analyzed with structural refinement by the Reitveld’s method. The results showed changes in the structure of the ceramics, which can be associated with the influence of the lanthanum content in the structure. These changes were confirmed in the SEM measurements, where a significant increase in average grain size with the increase of the doping content for bi-layer systems, as well as a reduction in average grain size for the tri-layer system, has been observed. The Raman measurements showed the characteristic bands of the Aurivillius systems, with influence of the lanthanum content in the structure, for all the cases. The ferroelectric properties were confirmed in all cases, with a small contribution of the conductivity, which can be the cause for the observation of unsaturated loops in some cases. Particularly, the SrBi2Ta2O9 system showed very well defined hysteresis loops and the BaBi2Nb2O9 system showed the expected behavior for relaxor ferroelectrics. On the other hand, well defined peaks were observed in the dielectric response for all cases, showing a strong influence of the dopant content in the dielectric parameters. The phase transition characteristics revealed behaviors associated with both normal and relaxor ferroelectrics. This effect has been discussed in details for all the cases. Very low values of the dielectric losses were found, when compared to those reported in the literature for typical Aurivillius systems. This result makes the materials studied here promissory systems for practical applications. / FAPEG: 201310267000048

Made available in DSpace on 2014-06-11T19:25:33Z (GMT). No. of bitstreams: 0 Previous issue date: 2006-12-15Bitstream added on 2014-06-13T19:12:25Z : No. of bitstreams: 1 paes_c_me_ilha.pdf: 1124164 bytes, checksum: b30843e958a40bb7c8b7ff4142f19d31 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / O presente trabalho tem como objetivo estudar, através de investigações de espectros no infravermelho (FTIR), as transições de fases estruturais do sistema ferroelétrico titanato zirconato de chumbo, PbZr1-xTixO3 (PZT) no Contorno de Fase Morfotrópico (Morphotropic Phase Boundary, conhecido como MPB), região em que as propriedades elétricas desse material são máximas. Foram analisadas as soluções sólidas PbZr0,53Ti0,47O3 e PbZr0,54Ti0,46O3, que à temperatura ambiente encontram-se no interior do MPB e PbZr0,55Ti0,45O3, composição no limite da região do MPB, entre a fase monoclínica e a fase romboédrica, região ainda não bem definida e sob intensa investigação. Estudos estão centrados na freqüência e na meia largura dos modos stretching nos octaedros (BO6) da estrutura perovskita (ABO3) em função da temperatura. Anomalias encontradas para amostras com 47 e 46 mol % de PbTiO3 sugerem as transições da fase monoclínica de baixa para alta temperatura ( LT M F ? HT M F ), da fase monoclínica de alta temperatura para a coexistência da fase monoclínica com a fase tetragonal ( M F ? M F + T F ), e da coexistência da fase monoclínica com a tetragonal para a fase cúbica ( M F + T F ? C F ). Na amostra com 45 mol % de PbTiO3 foram encontradas anomalias que podem também estar associadas às transições de fases, mas que não foram possíveis de serem identificadas nas fases envolvidas. / The present work studies, through investigations of the spectra in infrared (FTIR), the transitions of structural phases of the ferroelectric system lead zirconate titanate, PbZr1- xTixO3 (PZT), in the Morphotropic Phase Boundary (MPB), region where the electrical properties of this material are at its maxiumun. We analyzed the solid solutions PbZr0,53Ti0,47O3 and PbZr0,54Ti0,46O3, which at room temperature are found within the MPB and also the composition PbZr0,55Ti0,45O3, that is located on the limit of the MPB - between the monoclinic and the rhombohedral phases - a not-yet defined region under intense investigation. Studies are concentrating on frequency and half width of the stretching modes in octahedrons (BO6) of the perovskite structure (ABO3) regarding temperature. Anomalies found in samples with 47 and 46 mol % of PbTiO3 suggest transitions in the monoclinic phase from low to high temperature ( LT M F ? HT M F ), from monoclinic phase of high temperature to the coexistence between the monoclinic phase with the tetragonal phase ( M F ? M F + T F ), and the coexistence between the monoclinic phase with tetragonal for the cubic phase ( M F + T F ? C F ). In the sample with 45 % mol of PbTiO3 we have found anomalies that can also be associated with phase transitions. Such transitions have not been possible to identify during the stages of this work.

Made available in DSpace on 2014-06-11T19:25:34Z (GMT). No. of bitstreams: 0 Previous issue date: 2007-04-27Bitstream added on 2014-06-13T20:33:16Z : No. of bitstreams: 1 nahime_bo_me_ilha.pdf: 1294512 bytes, checksum: ffc3048caf6b741e23555fbf3b2fbd5e (MD5) / Na última década, cresceu consideravelmente o interesse pela produção de filmes finos ferroelétricos, em virtude do grande potencial que estes materiais apresentam para a produção de dispositivos de memória ferroelétrica não-voláteis. O titanato de bismuto, Bi4Ti3O12 (BIT) é um ferroelétrico com estruturas de camadas de bismuto, conhecido por apresentar elevada temperatura de Curie (Tc), próxima de 650ºC, e excelentes propriedades de fadiga ferroelétrica. Este trabalho teve como objetivo a síntese de filmes finos de BIT e o estudo das suas propriedades estruturais. Os filmes estudados foram preparados a partir de um método químico, similar ao método Pechini, e depositados sobre substratos de Si(100). Os filmes foram cristalizados em forno convencional entre 500°C e 700°C, por períodos entre 1 e 12 horas. As técnicas de difração de raios-X (DRX) e Espectroscopia no Infravermelho por Transformada Fourier (FT-IR), foram usadas como ferramentas de investigação. Para os filmes tratados termicamente entre 400°C e 700°C, observouse a presença das fases cristalinas Bi4Ti3O12 e Bi2Ti2O7 (paraelétrica). Para os filmes tratados termicamente a temperaturas mais elevadas (700°C) e tempos mais prolongados (10 horas), observou-se uma tendência de desaparecer a fase Bi2Ti2O17. Aliados a estes resultados, o aumento da intensidade do pico (117) do BIT e o decréscimo da sua respectiva largura a meia altura, para os filmes cristalizados a 700°C, sugerem que nestas condições são obtidos filmes mais bem cristalizados. Um estudo usando a técnica FT-IR demonstrou a presença de uma banda de absorção claramente evidenciada em torno de 700 cm-1. Esta banda está associada ao modo stretching da ligação Ti-O e torna-se consideravelmente mais estreita quando a resina polimérica precursora foi tratada termicamente a temperaturas mais elevadas. Este fato também comprovou que temperaturas em torno de 700°C são favoráveis para a... / In the last decade the interest for the production of ferroelectric thin films increased considerably because of the great potential that these materials present for the production of devices of no-volatile ferroelectric memory. The bismuth titanate, Bi4Ti3O12 (BIT), is a ferroelectric with structures of bismuth layers, known by presenting high temperature of Curie (Tc), close of 650ºC, and excellent properties of ferroelectric fatigue. This work had as objectives the synthesis of thin films of BIT and the study of their structural properties. The studied films were prepared starting from a chemical method, similar to the Pechini method, and deposited on substrata of Si(100). The films were crystallized in conventional oven between 500°C and 700°C for periods between 1 and 12 hours. The techniques of X-ray diffraction (DRX) and Fourier Transform Infrared (FT-IR) Spectroscopy were used as investigation tools. It was observed the presence of the crystalline phases Bi4Ti3O12 and Bi2Ti2O7 (paraelectric) for the films termically treated between 400°C and 700°C. To the films termically treated to higher temperatures (700°C) and more lingering times (10 hours) a tendency of the phase Bi2Ti2O7 to disappear was observed. Allied to these results, the increase of the intensity of the pick (117) of the BIT and the decrease of its respective width to half height, for the crystallized films to 700°C suggests that, in these conditions, better crystallized films are obtained. A study using the FT-IR technique demonstrated the presence of an absorption band clearly evidenced around 700 cm-1. This band is associated to the stretching way of the Ti-O connection and becomes considerably narrower when the precursory polimeric resin was termically treated to higher temperatures. This fact also proved that temperatures around 700°C are favorable for obtaining a mono-crystalline phase of Bi4Ti3O12.