Ces travaux de thèse ont porté sur des matériaux constitués de dispersions de particules colloïdales nanométriques, issues d'un matériau ferroélectrique, dans un cristal liquide chiral à phase smectique ferroélectrique. Ils ont pour but d'étudier les effets occasionnés par ces dispersions sur les propriétés du nanocolloïde, notamment celles liées à leur ferroélectricité. Cette étude a montré que les comportements mésomorphes et ferroélectriques de ces matériaux sont conservés. Une baisse de polarisation spontanée ainsi qu'un recul des températures des transitions ont été mis en évidence pour des faibles concentrations en NPs. Une "transition" de ces comportements a été observée pour une concentration critique au-delà de laquelle les particules s'agrègent pour former des amas au sein du milieu cristal liquide. Nous nous sommes intéressés ensuite à deux modes de relaxation diélectriques. Le premier lié aux mouvements de distorsions de l'hélice dans la phase ferroélectrique, le second aux mouvements de compression des couches smectiques de part et d'autre de la transition ferroélectrique-paraélectrique. Les comportements observés semblent être gouvernés par les modifications des propriétés visco-élastiques des nanocolloïdes, occasionnés par l'intercalation des nanoparticules entre les couches smectiques. / The present thesis work concerns materials made of dispersions of nanometric colloidal particles, from a bulk ferroelectric material, dispersed within a chiral smectic phase of a ferroelectric liquid crystal. The goal of this work is to study the effect of the dispersed nanoparticles over the nanocolloïd properties, specially the ones related to ferroelectricity. This study showed no change over mesomorphic and ferroelectric behavior of the materials. A decrease in spontaneous polarization and phase transition temperatures was found for low nanoparticle concentrations. A "transition" of these behaviors was observed for a critical concentration, beyond which, nanoparticles aggregate and form clusters inside the liquid crystal matrix. Afterwards, we have studied two dielectric relaxation modes. The first one related to distorsions of the helix in the ferroelectric phase and the second one to the compression movements of the smectic layers around the ferroelectric-paralectric transition. The observed behaviors seem to be due to modifications of the visco-elastic properties of nanocolloids, produced by intercalation of nanoparticles between the smectic layers.

Transparent glasses embedded with TTB structured ferroelectric nano/micro crystals (K3Li2Nb5O15, Ba5Li2Ti2Nb8O30) were fabricated in various tellurite and borate based glass matrices and characterized for their physical properties. Nanocrystals of K3Li2Nb5O15 were successfully grown inside tellurite glass matrix via conventional heat-treatment route. Eventhough, tellurite glasses preferentially crystallize only on the surface, bulk uniform crystallization was achieved in the (100-x) TeO2 - x(1.5K2O-Li2O-2.5Nb2O5) system. Heat capacity studies revealed them to be thermodynamically less fragile than any other tellurite glasses ever reported in the literature. Pyroelectric and ferroelectric effects as well as second harmonic generation were demonstrated for the heat treated (glass nanocrystal composites) samples in this system. The conventional method of melt-quenching of constituent oxides could not yield Ba5Li2Ti2Nb8O30 crystallites. So, Ba5Li2Ti2Nb8O30 microcrystals were successfully formed in tellurite glass matrix by mixing pre-reacted Ba5Li2Ti2Nb8O30 ceramic powders with TeO2. The glass transition temperature was found to be the highest ever reported and this system was kinetically strong based on the fragility parameter. Dielectric studies revealed a frequency and temperature independent nature of the dielectric constant and very low dielectric loss. The SHG measurement which was carried out as a function of temperature demonstrated the incidence of blue second harmonic generation in the microcrystals present in the glass matrix. Ba5Li2Ti2Nb8O30 nanocrystals were successfully crystallized in the transparent glass system (100-x)Li2B4O7 – x(Ba5Li2Ti2Nb8O30). Dielectric constant increased while the dielectric loss decreased with the increase in Ba5Li2Ti2Nb8O30 content. Nuclear magnetic resonance spectroscopic studies were carried out to have an insight into the structure of this system. Transmission studies and refractive index measurements were performed and various optical parameters were calculated. Dielectric and transport properties were studied for the glasses and glass nano/microcrystal composites of all the systems reported in this thesis. Li+ ion was found to be responsible for conduction in all these systems. Evolution of self-organized nanopatterns of K3Li2Nb5O15 crystals has been demonstrated in the glass system (100-x) TeO2 - x(1.5K2O-Li2O-2.5Nb2O5) by excimer laser irradiation. The second harmonic signal observed by the Maker fringe technique has been attributed to the presence of well-aligned nano-sized grating structures in the glass system. Glasses belonging to the systems TeO2-K3Li2Nb5O15, TeO2-Ba5Li2Ti2Nb8O30 and V2Te2O9 undergo spinodal decomposition on exposing to KrF pulsed excimer laser. The spinodally phase separated structures were observed on all the surfaces of the samples. Ring shaped patterns were observed on several locations of the samples at higher frequency of laser pulses probably owing to the shock waves produced by the high intense laser beam. Line shaped patterns were found to originate on the sample surfaces when irradiated for longer periods.

Visualization of domain structure evolution under an electrical bias has been carried out in ferroelectric La:HfO2 capacitors by a combination of Piezoresponse Force Microscopy (PFM) and pulse switching techniques to study the nanoscopic mechanism of polarization reversal and the wake-up process. It has been directly shown that the main mechanism behind the transformation of the polarization hysteretic behavior and an increase in the remanent polarization value upon the alternating current cycling is electrically induced domain de-pinning. PFM imaging and local spectroscopy revealed asymmetric switching in the La:HfO2 capacitors due to a significant imprint likely caused by the different boundary conditions at the top and bottom interfaces. Domain switching kinetics can be well-described by the nucleation limited switching model characterized by a broad distribution of the local switching times. It has been found that the domain velocity varies significantly throughout the switching process indicating strong interaction with structural defects.

The electric-field-driven and reversible polarization switching in ferroelectric materials provides a promising approach for nonvolatile information storage. With the advent of ferroelectricity in hafnium oxide, it has become possible to fabricate ultrathin ferroelectric films suitable for nanoscale electronic devices. Among them, ferroelectric field-effect transistors (FeFETs) emerge as attractive memory elements. While the binary switching between the two logic states, accomplished through a single voltage pulse, is mainly being investigated in FeFETs, additional and unusual switching mechanisms remain largely unexplored. In this work, we report the natural property of ferroelectric hafnium oxide, embedded within a nanoscale FeFET, to accumulate electrical excitation, followed by a sudden and complete switching. The accumulation is attributed to the progressive polarization reversal through localized ferroelectric nucleation. The electrical experiments reveal a strong field and time dependence of the phenomenon. These results not only offer novel insights that could prove critical for memory applications but also might inspire to exploit FeFETs for unconventional computing.

Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating ferroelectric layers and integrating them into complementary metal oxide semiconductor (CMOS) devices has hindered rapid scaling. Hafnium oxide is a standard material available in CMOS processes. Ferroelectricity in Si-doped hafnia was first reported in 2011, and this has revived interest in using ferroelectric memories for various applications. Ferroelectric hafnia with matured atomic layer deposition techniques is compatible with three-dimensional capacitors and can solve the scaling limitations in 1-transistor-1-capacitor (1T-1C) ferroelectric random-access memories (FeRAMs). For ferroelectric field-effect-transistors (FeFETs), the low permittivity and high coercive field Ec of hafnia ferroelectrics are beneficial. The much higher Ec of ferroelectric hafnia, however, makes high endurance a challenge. This article summarizes the current status of ferroelectricity in hafnia and explains how major issues of 1T-1C FeRAMs and FeFETs can be solved using this material system.

À la surface ou à l’interface d’un matériau ferroélectrique, la polarisation peut être déstabilisée voire même annulée par le champ dépolarisation qui résulte de charges de polarisation non compensées. En l’absence de mécanismes d’écrantage extrinsèques (adsorbats, électrodes) ou intrinsèques (défauts, dopants), l’ordonnancement en domaines est le moyen le plus naturel dont un système a recourt pour rester ferroélectrique et minimiser son énergie électrostatique. Cette thèse se concentre sur l’étude de la stabilité de multiples configurations en domaines, ainsi que de la façon dont elle dépend de facteurs géométriques, chimiques et élastiques, à la surface du BaTiO3(001).Des calculs ab initio, fondés sur la théorie de la fonctionnelle de la densité, ont été menés pour éclaircir l’influence de la terminaison de surface, de la contrainte parallèle à la surface, de l’épaisseur du système et de la taille des domaines sur la polarisation de différentes phases ferroélectriques dans des couches ultraminces. L’effet de lacunes d’oxygène en surface sur la polarisation et sur la structure électronique a aussi été étudié. La microscopie d’électrons lents (LEEM) et la microscopie d’électrons photoémis (PEEM) ont été utilisées pour étudier les propriétés de la polarisation à la surface de monocristaux de BaTiO3 réduit, afin d’examiner l’influence des lacunes d’oxygène sur la polarisation ferroélectrique par une approche expérimentale, renforçant ainsi les résultats de calculs. / At a surface or interface of a ferroelectric material, the polarization can be destabilized and even suppressed by the depolarizing field which arises from uncompensated polarization charge. In the absence of external (adsorbates, electrodes) or internal (defects, dopants) screening mechanisms, domain ordering is the most natural way for a system to remain ferroelectric and minimize its electrostatic energy. This thesis focuses on the study of the stability of various possible domain configurations, and on how it depends and interplays on size, chemical and elastic factors, at the (001) surface of BaTiO3.First-principles calculations, based on density functional theory, have been performed to enlighten the influence of surface terminations, in-plane strain, system thickness and domain size in ultrathin films on the polarization in different ferroelectric phases. The effect of surface oxygen vacancies on the polarization and electronic structure has also been investigated. Low Energy electron microscopy (LEEM) and photoemission electron microscopy (PEEM) have been used to study the surface properties of ferroelectric polarization in reduced BaTiO3 single crystals, allowing to address the influence of oxygen vacancies on the ferroelectric polarization from experimental approaches, supporting the calculations results.

One third of world’s total energy is used in production of electricity and one fifth of the total electricity produced in the world is used in lighting. Hence, the materials that have high potential in the field of photovoltaic’s and photoluminescence have recently drawn special attention to meet the ever increasing energy demands. In this thesis, we have studied a few materials that hold tremendous promises in fabricating photovoltaics and photoluminescent devices. Any ferroelectric material is an efficient solar energy converter as it contains an the intrinsic dipolar field which can effectively separate the photo excited electron and hole. We have developed a few materials which possess inherent polarization efficiently absorb over a wide portion of the solar spectrum and hence can find application in the field of photovoltaics. Secondly, we also dealt with semiconductor nonmaterial’s which are technologically very important owing to their improved photoluminescence properties. We tried to improve their light emitting efficiency by engineering crystal structure in nanometer length scales. The thesis deals with such advanced energy materials and is divided in seven chapters. Chapter 1 provides a brief introduction to the fundamental concepts that are relevant in the subsequent chapters. The chapter is started with a brief scenario of current status of energy production and its usage. Next, we have discussed the prospects of ferroelectric materials in photovoltaic devices. This is followed by a brief background on ferroelectricity and related properties which we have studied subsequently. At the end of this chapter a brief overview of photoluminescence properties in semiconductor nonmaterial’s is presented. In this section we have addressed the particular issues that need to be taken care of in order to improve their light emission properties. Chapter 2 describes different experimental and theoretical methods that have been employed to carry out different studies presented in the thesis. Chapter 3 addresses the possibility of employing BaTiO3 (BTO) based composite perovskite oxides as a potent photovoltaic material. It is known that BTO can produce photocurrent upon excitation with suitable light source. However, inability of BTO to absorb sufficient sunlight owing to its near UV band gap prevents to make use of this material in photovoltaic devices. In order to reduce the band gap we have tried to tune the electronic structure at the band edge by doping non-d0 transition metal ions at Ti site. As it is known in the literature an isovalent substitution of Ti4+ stabilizes non-polar phase of BTO we employed a co-doping strategy to substitute tetravalent Ti with equal percentage of a trivalent and a pentavalent metal ion. Keeping in mind off-centering of Ti4+ is primary reason behind the large ferroelectric polarization of BTO, a judicious choice of co-dopant was necessary to minimize reduction of polarization due to replacement of Ti. We have found at least two pairs of co-dopants, namely Mn3+-Nb5+ and Fe3+-Nb5+ which at low doping concentration ( < 10%) effectively reduces the band gap of BTO without affecting its polarization to a large extent. We systematically increase the doping concentration of both the pair of dopants and found Mn3+-Nb5+ pair is more efficient over Fe3+-Nb5+ both in terms of reducing band gap and retaining the polarization of BTO. We have characterized the ferroelectric nature of all the doped compositions with the help of dielectric, polarization and pyroelectric measurements. We have also performed first principle density functional theory (DFT) calculations for an equivalent doped composition and addressed the nature of modulations of electronic structure at the band edges which is responsible for such large reduction of band gap. Chapter 4 deals with composite perovskite materials which posses large tetragonal distortions with reduced optical band gaps. Here we have exploited Cu-Nb and Cu-Ta pair which upon complete substitution of Ti of BTO leads to composite perovskites with enhanced tetragonal distortion of the perovskite lattice. For two resultant compositions, namely BaCu1/3Nb2/3O3 and BaCu 1/3Ta2/3O3 we have characterized the optical and ferroelectric properties. We found though these material possess small band gap (∼ 2 eV), these are not ferroelectric in nature. Results of second harmonic generation measurements and refinement of powder X-ray diffraction both establish Centro symmetric nature of these materials. We infer from these results that presence of large tetragonal distortion is a result of symmetric Jahn-Teller type distortion of Cu2+ and not due to off-centering of any of the metal ions in their MO6 octahedral geometries. In Chapter 5, we have considered the material SrTiO3 (STO) which is stable in cubic paraelectric phase at room temperature. But at the same time this material is considered as an incipient ferroelectric due to presence of an active polar vibrational mode which does not become completely soft even at temperature close to 0 K. While this polar vibrational mode can easily be frozen by making substitution at Sr site, a similar attempt by making substitution at Ti site failed earlier. Keeping in mind Ti is easier to substitute than Sr we employed same co-doping strategy that we have considered in Chapter 3. We found Mn- Nb and Mn-Ta co-dopants at low doping concentration are extremely useful in transforming incipient ferroelectric STO into a dipolar glass. We have characterized the glassy dipolar property of doped STO with the help of tem-perature dependent dielectric response of these material. At the same time we found these co-doped STO possess enhanced static dielectric constant at room temperature with favourable dielectric loss values in comparison to pure STO. We have also ad-dressed the origin of a glassy dipolar state with the help of DFT calculation performed on equivalent doped composition that we have considered for our experiments. In Chapter 6, we have considered another incipient ferroelectric material TiO2 in rutile phase which also possess polar vibrational mode at temperature close to 0 K. A lattice strain along the polar vibrational mode make symmetric non-polar structure unstable with respect to the distorted polar structure. In this context, we found two particular compositions FeTiTaO6 and CrTiTaO6 that are also stable in rutile phases at room temperature but possess similar strain due to presence of larger Fe or Cr and Ta in rutile lattice. Considering the fact these two composite rutile oxides are relaxer ferroelectric in nature, we critically evaluated the effect of the particular kind of strain that these materials introduce in rutile lattice. We also characterized relaxor ferroelectric property and optical band gap of these materials and commented on the potential of these materials in exploiting them in photovoltaic devices. Chapter 7 presents a unique strategy of making use of crystal defects in improving photoluminescent properties of semiconductor nanocrystals. We have shown defects when introduced in nanocrystals in a controlled protected manner efficiently overcome the problem of self absorption which is known to reduce quantum efficiency of emit-ted light. Controlling synthesis conditions we separately prepared CdS nanocrystals with and without intergrowth defects. We characterized the presence of the intergrowth defect with the help of high resolution transmission electron microscope (HRTEM) image. We have also characterized Stokes’ shifted PL emission and ultrafast charge carrier dynamics of these NCs with intergrowth defects. To support these experimental findings we have computed the electronic structures of model nanoclusters possessing similar intergrowth defects that has been observed in HRTEM images. We find that the presence of defects in a nanocluster particularly affect the position of the band edge. However our joint density of state calculation shows that contribution of these defect states to an absorption spectra is negligible. Thus presence of defect states at band edge ensures a Stokes’ shifted emission without affecting the position of absorption. In a separate section of this chapter we have shown apart from intergrowth defects presence of twin boundary also provide similar mid-gap states that can alter its’ optical proper-ties to large extent. In summary, we have studied a few bulk and nano-materials which can show improved photovoltaic and photoluminescence property. We investigated effect of external dopant ions on a classical ferroelectric material BaTiO3 and two incipient ferroelectric materials SrTiO3 and rutile TiO2. We have also shown that efficient defect engineering could be extremely useful in improving photoluminescent property of CdS nanocrystals which is a prototype of II-VI semiconductor nanomaterials. In a separate Appendix Chapter, we have shown an easy and efficient way to suppress coffee ring effect which takes place universally when a drop of colloidal suspension is dried on a solid substrate. We have shown temporary modification of hydropho-bicity of a glass substrate not only can suppress the coffee ring effect but also leaves the particle in a highly ordered self-assembled phase after completion of drying process

Ferroelectric HfO₂ attracts a huge amount of attention not only for memory and negative capacitance, but also for programmable logic including memory-in-logic and neuromorphic applications. However, the understanding of material fundamentals still needs to be improved. This paper gives material fundamentals and new insights to this ferroelectric material for future device applications. In particular, the key role of dopants, effects of the interface on the ferroelectric phase, and a detailed discussion of the switching kinetics are of central focus. Based on material properties newly obtained, we discuss opportunities of ferroelectric HfO₂ for device applications.

Manifold research has been done to understand the detailed mechanisms behind the performance instabilities of ferroelectric capacitors based on hafnia. The wake-up together with the imprint might be the most controversially discussed phenomena so far. Among crystallographic phase change contributions and oxygen vacancy diffusion, electron trapping as the origin has been discussed recently. In this publication, we provide evidence that the imprint is indeed caused by electron trapping into deep states at oxygen vacancies. This impedes the ferroelectric switching and causes a shift of the hysteresis. Moreover, we show that the wake-up mechanism can be caused by a local imprint of the domains in the pristine state by the very same root cause. The various domain orientations together with an electron trapping can cause a constriction of the hysteresis and an internal bias field in the pristine state. Additionally, we show that this local imprint can even cause almost anti-ferroelectric like behavior in ferroelectric films.

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