This PhD project is focused on three lead-free ferroelectric solid solutions, which are specifically Na0.5Bi0.5TiO3-KNbO3(NBT-KN), Na0.5Bi0.5TiO3-NaNbO3(NBT-NN) and Na0.5Bi0.5TiO3-BaTiO3(NBT-BT), to evaluate the effects of composition, electric field and temperature on structural and electrical properties. Novel observations of both reversible and irreversible electric field-induced phase switching were made in both NBT-KN and NBT-NN ceramics. The NBT-KN solid solution is the primary focus of this thesis. All compositions were observed to be cubic in the as-sintered, unpoled state. However, a well-defined ferroelectric hysteresis P-E loop was obtained for compositions with low KN contents, indicating that an irreversible phase transition from a weak-polar relaxor ferroelectric (RF) to a long-range ordered metastable ferroelectric (FE) state had occurred during the measurement procedure. Both the unpoled and poled ceramic powders were examined using high resolution synchrotron XRD. For the poled state, a rhombohedral R3c structure was identified for compositions with low KN content, confirming the occurrence of the irreversible electric field-induced structural transformation from cubic to rhombohedral. In contrast, a cubic structure was retained for high KN contents, giving rise to reversible phase switching evidenced by constricted P-E hysteresis loops. Similar behaviour was observed for NBT-NN system. An 'in-situ' electric field poling experiment was conducted using high energy synchrotron XRD. In certain NBT-KN compositions the structural transformation, from cubic to mixed phase cubic+rhombohedral and finally single phase rhombohedral, occurred progressively with increasing cycles of a bipolar electric field. Similar behaviour was observed for NBT-NN compositions having low NN contents. Furthermore, the distributions of domain orientation and lattice strain over a range of orientations relative to the poling direction were determined for NBT-KN, NBT-NN and NBT-BT ceramics exhibiting the rhombohedral phase. By combining the structural information with the results of dielectric and ferroelectric measurements, a phase diagram was constructed to illustrate the influence of temperature and composition on the stability of the metastable ferroelectric and relaxor ferroelectric states for the NBT-KN system. Furthermore, the phase transition temperatures obtained from dielectric measurements were correlated with the ferroelectric and thermal depolarisation characteristics for each of the NBT-KN, NBT-NN and NBT-BT systems.

Pulsed laser deposition has been used to grow Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT)/LaNiO₃ (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO₂-coated Si(001) substrates, using TiN buffer layers. The effect of background gas pressure on orientation of the thin films was investigated in detail. XRD analyses showed that under optimized conditions, (001)-oriented PZT/LNO/TiN heterostructures could be grown on either Si(001) or SiO₂/Si substrates. The (001)-textured PZT films had remnant polarizations as high as 23µC/cm², and also had a low coercive field. Up to 10¹⁰ switching cycles have been achieved in these PZT films. / Singapore-MIT Alliance (SMA)

The aim of this study is to produce Nb doped PZT thin films and then investigate the effects of Nb+5 ion on the structural, dielectric and ferroelectric properties. Niobium (Nb) doped lead zirconate titanate thin films (PNZT) were produced by solution deposition with nominal compositions, Pb(1-0.5x)(Zr0.53Ti0.47)1-xNbxO3 where x = 0.00 - 0.07. Single and multi-layered films were deposited onto (111)-Pt/Ti/SiO2/Si-(100) substrates by spin coating. PZT compositions near the morphotropic phase boundary (MPB) was chosen because excellent ferroelectric and dielectric properties were achieved in this area. The effects of sintering temperature, sintering time, variation of thickness in the films and change of niobium content were investigated with regard to phase development, microstructure, and ferroelectric and dielectric characteristics. The best results were obtained in double layered films (390 nm) which were sintered at 600 &deg / C for 1 h. Grain size of the films decreases with increasing Nb content except for 1 at % Nb doped films. The average grain size of 1 at % Nb doped thin films was calculated as 130 nm by using FESEM. Optimum doping level was found in 1 at % Nb doped films. For 1 at % Nb doped [Pb0.995(Zr0.53Ti0.47)0.99Nb0.01O3] films, remnant polarization (Pr) of 35.75 &amp / #956 / C/cm2 and coercive field (Ec) of 75.65 kV/cm have been obtained. The maximum dielectric constant was achieved in 1 at % Nb doped films which was 689. Tangent loss values were found between 2-4 % and these values were independent of Nb concentrations. Ferroelectric and dielectric properties were decreased at higher Nb doping levels because of the changes in the grain size, distortion of the crystal structure and pinning of the domains.

No description available.

In the presented thesis, lead-free Ba(Ti0.8Zr0.2)O3-(Ba0.7Ca0.3)TiO3 (BZT-BCT) thin films were deposited on Pt/TiO2/SiO2/Si substrates using chemical solution deposition method and then the effect of process parameters were investigated to obtain optimum parameters of these lead-free thin films. The phase was selected near to the morphotropic phase boundary (MPH) to increase the number of polarization directions where rhombohedral and tetragonal phases exist together. In this study, the effect of sintering temperatures on microstructure, dielectric and ferroelectric properties were studied systematically. Among the various high-quality BZT-BCT thin films with uniform thickness, the optimum dielectric and ferroelectric responses were observed for films annealed at 800 oC for 1 h sintering time. The thickness was kept constant for all measurements as 500 nm (triple layered films). Therefore, the average grain sizes were found around 60 nm for samples sintered at 700,750 and 800 oC. BZT-BCT thin films sintered at 800 oC showed effective remnant polarization and coercive field values of 2.9 &micro / C/cm2 and 49.4 kV/cm, together with a high dielectric constant and low loss tangent of 365.6 and 3.52 %, respectively, at a frequency of 600 kHz due to pure perovskite phase showing full crystallization and minimum surface porosity obtained at this temperature.

Different causes for ferroelectric properties in hafnium oxide were discussed during the last decade including various dopants, stress, electrode materials, and surface energy from different grain sizes. Recently, the focus shifted to the impact of oxygen vacancies on the phase formation process. In this progress report, the recent understanding of the influence of oxygen supplied during deposition on the structural phase formation process is reviewed and supplemented with new data for mixed HfₓZr₁₋ₓOᵧ films. Even though polar and non-polar HfₓZr₁₋ₓOᵧ thin films are well characterized, little is known about the impact of oxygen exposure during the deposition process. Here, a combination of structural and electrical characterization is applied to investigate the influence of the oxygen and zirconium content on the crystallization process during ALD deposition in comparison to other deposition techniques. Different polarization properties are assessed which correlate to the determined phase of the film. Optimized oxygen pulse times can enable the crystallization of HfₓZr₁₋ₓOᵧ in a polar orthorhombic phase rather than a non-polar monoclinic and tetragonal phase.

No description available.

Les matériaux ferroélectriques présentant une permittivité diélectrique élevée et de faibles pertes diélectriques présentent un grand intérêt pour la réalisation de condensateurs et le stockage de l'énergie électrique. Les propriétés structurales et diélectriques influencent les paramètres ferroélectriques tels que la polarisation maximale du matériau Pm et la polarisation rémanente Pr sous l'effet d'un champ électrique appliqué Em. Ce mémoire propose d'étudier les propriétés structurales, diélectriques et ferroélectriques des céramiques dérivées de BaTiO₃ (BT) et SrTiO₃ (ST) ainsi que des films épais PVDF pur et composites tels que PVDF/BT et PVDF/BZT. Les céramiques ont été synthétisées par la méthode de la réaction solide et le procédé sol-gel. La substitution dans les sites-A ou les sites-B du matériau BaTiO₃ avec des cations tels que Ca ²⁺, Sr²⁺ and Zr⁴⁺ réduit la densité d'énergie électrique stockée Wd et augmente l'efficacité de stockage énergétique η. La céramique BaZr₀.₅Ti₀.₅O₃ (BZT0.5) présente l'efficacité de stockage énergétique la plus élevée (η=75%). La substitution dans les sites-A du matériau SrTiO₃ avec 40% de cations Ca²⁺ diminue la permittivité diélectrique (ε'∽200), mais cette permittivité est cependant plus stable sur une large gamme de fréquence [100 Hz-1 GHz]. La céramique Sr₀.₆Ca₀.₄TiO₃ préparée par voie sol-gel présente la densité d'énergie électrique stockée la plus élevée (Wd=0.149 J/cm³) sous l'action d'un champ électrique maximal élevé (Em=105 kV/cm). Les films épais à base de polymère PVDF ont été synthétisés par Spin-Coating. La permittivité diélectrique des films épais PVDF pur augmente avec l'apaisseur du film. L'incorporation de particules BT et BZT0.15 dans la matrice polymère PVDF augmente la permittivité diélectrique des films composites PVDF/BT (ε'=32 pour 30% de particules BT) et PVDF/BZT0.15 (ε'=32 pour15% de particules BZT). / Ferroelectric materials with a high dielectric permittivity and low dielectric losses are very attractive for the realization of capacitors and for electrical energy storage. To improve the electrical energy density Wd, the structural and dielectric properties influence the ferroelectric parameters such as the maximum polarization Pm and the remanent polarization Pr under an applied electric field Em. This manuscript proposes to study the structural, dielectric and ferroelectric properties of ceramics derived from BaTiO₃ (BT) and SrTiO₃ (ST) as well as pure PVDF thick films and composites such as PVDF/BT and PVDF/BZT. The ceramics were synthesized by the solid state reaction reaction route and the sol-gel process. The subsitution in the A-sites or B-sites of the BaTiO₃ material with cations such Ca²⁺, Sr²⁺ and Zr⁴⁺ reduces the electrical energy density Wd and increases the energy storage efficiency η. The ceramic BaZr₀.₅Ti₀.₅O₃ (BZT0.5) has the highest energy storage efficiency (η=75%). The substitution in the A-sites of SrTiO₃ material with 40% of Ca²⁺ cations reduces the dielectric permittivity (ε'∽200), but is more stable over a wide frequency range [100 Hz -1 GHZ]. The Sr₀.₆Ca₀.₄TiO₃ ceramic prepared by sol-gel process has the highest electrical energy density (Wd = 0.149 J/cm³) under an electrical field Em = 105 kV/cm. The PVDF thick films were synthesized by Spin-Coating. The dielectric permittivity of pure PVDF thick films increases when increasing the thickness. The addition of BT and BTZ0.15 particles in the PVDF polymer matrix increases the dielectric permittivity of the composite PVDF/BT thick films (ε'=32 for 30% of BT particles) and PVDF/BZT0.15 ones (ε'=32 for 15% of BZT particles).

This thesis presents the synthesis and investigations of physical and chemical properties of multiferroic materials experimentally as well as theoretically. Multiferroics are materials in which at least two of the three ferroic orders, ferroelectricity, ferromagnetism and ferroelasticity occur in the same phase. Multiferroics, have the potential to be used as a four state as well as cross switchable memory devices. The thesis is organized into seven Chapters. Chapter 1 gives a brief overview of the different facets of multiferroics, explaining the origin of Multiferroicity and magnetoelectric coupling, their possible technological applications and the challenges involved. Chapter 2-4 concerns the experimental aspects and chapter 5-7 concerns the theoretical aspects. Chapter 2 deals with experimental investigations on nanoscale charge-ordered rare earth manganites. It shows with decreasing particle size the ferromagnetic interaction increases and the charge-ordering vanishes down to the lowest sizes. Chapter 3 describes magneto-dielectric, magnetic and ferroelectric properties of hexagonal LuMnO3. It also describes the Raman spectroscopy of this compound through the magnetic and ferroelectric transition temperatures. Chapter 4 deals with the anisotropic multiferroic properties in single crystals of hexagonal ErMnO3. In chapter 5 a brief introduction of density functional theory (DFT) is given. Chapter 6 deals with the magneto-structural changes, spin-phonon couplings and crystal field splittings for the different magnetic orderings LuMnO3. Chapter 7 elucidates the role of Lu d0-ness for the ferroelectricity observed of this compound.

The present research work focuses on the fabrication and characterization of epitaxial heterostructures of 0.7 Pb(Mg1/3N2/3)O3 – 0.3 PbTiO3 (PMN-PT) and La0.6Sr0.4MnO3 (LSMO) using multi target pulsed laser ablation technique. Different heterostructures such as bilayered thin films with different individual layer thickness; symmetric and asymmetric superlattices of different periodicities were fabricated. Roles of individual layer thickness, elastic strain and interfaces between PMN-PT and LSMO layers on different physical properties were studied. An attempt has been made to understand the influence of the charge depleted interface states in addition to the probable strain mediated elastic coupling effect on the observed magneto-dielectric response in these engineered heterostructures. Chapter 1 provides a brief introduction to the multiferroic materials, occurrence of magnetoelectric (ME) coupling in them, their possible technological applications and the challenges involved. A short historical account of the multiferroic research is discussed to emphasize the importance of artificial multiferroics, particularly the engineered thin film heterostructures. Finally the specific objectives of the current research are outlined. Chapter 2 deals with the various experimental studies carried out in this research work. It gives the details of the experimental set up and the basic operation principles of various structural and physical characterizations of the materials prepared. A brief explanation of material fabrication, structural, micro structural and physical property measurements is discussed. Chapter 3 addresses the phase formation, structural and microstructural features of the engineered heterostructures fabricated epitaxially on single crystalline LaAlO3 (100) substrates. A thin layer of LaNiO3 used as the bottom electrode material for electrical characterizations was grown on the bare substrate prior to the fabrication of the PMN-PT/LSMO heterostructures. The structural and microstructural features of different individual layers were also studied by fabricating single layer thin films of the materials. The effects of individual layer thicknesses on the surface roughness, grain size and lattice strain of the heterostructures are discussed. Chapter 4 deals with the ferroelectric studies of the PMN-PT/LSMO epitaxial heterostructures. Polarization hysteresis (P-E), capacitance – voltage (C-V) and pulsed polarization (PUND) measurements were carried out as functions of applied voltage, frequency and delay time to characterize the ferroelectric properties of the heterostructures. All the bilayered heterostructures exhibited robust ferroelectric response and contribution of non – remnant components to their polarization behaviour were observed from the P-E studies. The symmetric superlattices did not exhibit any ferroelectricity due to high leakage current conduction. After optimizing the LSMO and PMN-PT layer thicknesses ferroelectricity was observed in the asymmetric superlattices accompanied by substantial reduction in the leakage current conduction. The P-E loops were found to be asymmetrically shifted along the electric field axis in all the superlattices indicating the presence of dielectric passive layers and strong depolarizing fields at the interfaces between PMN-PT and LSMO. Chapter 5 deals with the ferromagnetic studies of the PMN-PT/LSMO heterostructures. All the heterostructures exhibited ferromagnetic behaviour in the temperature range of 10 K – 300 K with an in plane magnetic easy axis ([100]) compared to the out of plane ([001]) direction. The magnetization behaviour of the bilayers and superlattices as a function of magnetic field strength, temperature and different individual layer thickness of PMN-PT and LSMO are discussed in terms of the oxygen deficiency, magnetic dead layers and lattice strain effects in these engineered epitaxial heterostructures. Chapter 6 addresses the magneto-dielectric response, dielectric properties and ac conduction properties of the engineered biferroic heterostructures. In order to investigate the manifestation of strain mediated ME coupling in these heterostructures their dielectric response as a function of ac electric signal frequency have been studied under different static magnetic fields over a wide range of temperatures. The appearance of magneto-capacitance and its dependence on magnetic field strength and temperature along with the magnetoresistive characteristics of the heterostructures suggested that the charge depleted interfaces between PMN-PT and LSMO can have an effect on the observed dielectric response in addition to the probable strain mediated ME coupling. Dielectric characterization of the heterostructures performed over a wide range of temperature indicated a Maxwell-Wagner type relaxation mechanism. The manifestation of Maxwell-Wagner effect and the very low activation energy of ac conductivity obtained from the ac conduction studies revealed the strong influence of the charge depleted interfaces between PMN-PT and LSMO on the dielectric properties of the heterostructures. Chapter 7 deals with the dc leakage current conduction characteristics of the heterostructures. The leakage current characterization was performed over a wide range of temperature and analyzed in the framework of different models to investigate the leakage mechanism. All the heterostructures were found to obey the power law I∝Vα over the entire range of temperature with different values of α at different applied voltages. The bilayered heterostructures exhibited ohmic conduction in the lower electric field region and space charge limited conduction was observed at higher electric fields. On the other hand the low field dc conduction behaviour of the superlattices could not be attributed unambiguously to a single mechanism. Depending on the superlattice periodicity the low field conduction behaviour was dominated by either Poole-Frenkel (PF) emission or a combined contribution from the PF effect and ohmic conduction. At higher electric fields all the superlattices exhibited space charge limited conduction. Chapter 8 gives the summary and conclusions of the present study and also discusses about the future work that could give more insight into the understanding of the engineered epitaxial biferroic heterostructures.