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No. of bitstreams: 1 TeseRRGP.pdf: 3041523 bytes, checksum: f8585bab1f9c1565717516794f4e8831 (MD5) Previous issue date: 2015-09-04 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / This study analyses the relationships between synthesis routes and physical properties of the composite system 67.5(PbMg1/3Nb2/3O3) +32.5(PbTiO3), or simply PMN-PT, as ferroelectric phase and BaFe12O19, or BaM, as magnetic phase. The choice of phases was based on the exceptional properties that both PMN-PT and BaM possess: solid solutions of the complex perovskite PMN-PT in both monocrystalline and polycrystalline forms, particularly those whose composition lies within the region of morphotropic boundary phases, have the largest known piezoelectric coefficients. BaM, or barium hexaferrite, presents relatively high property anisotropy due to its hexagonal crystal structure (expressed in particles that grow in nonequiaxed format) and easy magnetization along the c-Crystallographic axis. Thus, the main objective of this work was to obtain and characterize magnetoelectric composites (either volumetric or as two-dimensional nanostructures) textured from PMN-PT/BaM, by exploiting the quasi-piezomagnectic characteristics and the microstructural, crystallographic and magnetic anisotropyof the BaM phase. With a molar ratio of 80/20 between the ferroelectric and magnetic phases, different routes of synthesis and processing were used for the production of threedimensional ceramic composites with 0-3 connectivity, or thin films with 0-3 and 2-2 connectivity.The Pechini, sol-gel, co-precipitation,and solid state reaction techniques were applied for the synthesis of powders and/or solutions; the pressure-assisted sintering method was used for the densification of three-dimensional bodies; and the spin-coating technique was employed for the deposition of films. Physical, electrical, magnetic and magnetoelectric characterizations were performed in order to clarify the influence of the BaM phase upon composites of different configurations. In a prospective yet not exhaustive manner, relations were assessed among the experimental parameters of the various synthesis routes (with greater focus on the barium hexaferrite phase) and the production of ceramic composites of PMNPT/ BaM system. It was found that the final characteristics of the prepared materials, particularly the hysteresis behavior of the magnetoelectric coefficient as a function of applied magnetic field, were highly susceptible to variations in the morphology, size and orientation of barium hexaferrite grains, which, in turn, depended on the synthesis and sintering routes applied. / Realizaram-se estudos de síntese e de caracterização das propriedades físicas do sistema compósito 67,5(PbMg1/3Nb2/3O3) +32,5(PbTiO3), ou simplesmente PMN-PT, como fase ferroelétrica, e da BaFe12O19, ou BaM, como fase magnética. A escolha dessas fases baseou-se nas propriedades excepcionais que ambas apresentam. A perovskita complexa PMN-PT, tanto na forma monocristalina como policristalina, apresenta soluções sólidas com os maiores coeficientes piezoelétricos conhecidos, particularmente as de composição na região do contorno morfotrópico de fases, como é o caso da 32,5%mol de PT. A fase BaM, ou hexaferrita de bário, apresenta relativamente alta anisotropia de propriedades magnéticas devido à sua estrutura cristalográfica hexagonal (refletida em partículas que crescem em formato não equiaxial) e fácil magnetização ao longo do eixo cristalográfico-c. O objetivo principal deste trabalho foi a obtenção e a caracterização de compósitos magnetoelétricos (volumétricos ou como nanoestruturas bidimensionais) texturados de PMN-PT/BaM, explorando-se as características quasi-piezomagnéticas e a anisotropia microestrutural/cristalográfica/magnética da fase BaM. Com uma proporção molar de 80/20 entre a fase ferroelétrica e a magnética, foram utilizadas diferentes rotas de síntese e de processamento de materiais para a produção de compósitos com conectividade 0-3, quando no caso de corpos cerâmicos volumétricos; ou 0-3 e 2-2, quando no caso de filmes finos. Os métodos Pechini, sol-gel, de copreciptação e de reação no estado sólido foram utilizadas na síntese dos pós e/ou soluções; o método de sinterização assistida por pressão, para a densificação dos corpos volumétricos, e a técnica “spin-coating”, para a deposição dos filmes. As caracterizações físicas, elétricas, magnéticas e magnetoelétricas buscaram evidenciar a influência das propriedades da fase BaM nas diferentes configurações de compósitos. De forma prospectiva e ainda não exaustiva, foram avaliadas as relações entre os parâmetros experimentais das diversas rotas de síntese (com maior foco na fase hexaferrita de bário) e a produção de compósitos cerâmicos do sistema PMN-PT/BaM. Encontrou-se que as características finais dos materiais preparados, em especial o comportamento histerético do coeficiente magnetoelétrico em função do campo magnético aplicado, foram altamente susceptíveis às variações da morfologia, tamanho e orientação dos grãos da hexaferrita de bário, que, por sua vez, dependem das rotas de síntese e de sinterização aplicadas.

<p style="text-align: justify;">Kroz istoriju, otkrivanje novih materijala i njihovog dizajna dovodilo je do tehnolo&scaron;kih revolucija. U pro&scaron;lom veku, novi materijali naprednih svojstava uveli su elektronske uređaje u svakodnevni život čoveka. Industrija mikročipova predstavlja ogroman deo svetskog trži&scaron;ta, i traži neprestan razvoj da bi pružila bolje proizvode potro&scaron;ačima. Početkom ovog veka, nova grupa materijala, pod nazivom multiferoici, privukla je pažnju naučno-istraživačkog dru&scaron;tva u svetu. Ovi materijali poseduju jedinstvenu karakteristiku da istovremeno ispoljavaju vi&scaron;e od jedne feroične osobine (feroelektričnost, feromagnetizam, feroelastičnost), a &scaron;to je jo&scaron; važnije, mogu da ostvare interakciju među njima. Naime, magnetizacija multiferoika se može postići primenom spolja&scaron;njeg električnog polja, a takođe se mogu i polarisati primenom spolja&scaron;njeg magnetnog polja. Ovo vrlo interesantno svojstvo otvara potencijlanu primenu u oblasti hibridne računarske memorije, senzora, aktuatora, i dr. Sredinom pro&scaron;log veka, jednofazni multiferoici su prvi privukli pažnju, ali poseldnjih godina, kompozitni multiferoici su pokazali bolje rezultate u pogledu funkcionalnih karakteristika. Trend minijaturizacije je takođe prisutan u ovoj oblasti, stoga su multiferoični tanki filmovi vrlo atraktivni u istraživačkih krugovima ne samo zbog niske potro&scaron;nje električne energije, malog utro&scaron;ka meterijala i malih dimenzija, već i zbog dobre magnetoelektrične interakcije.&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Glavni cilj ove doktorske disertacije je bio određivanje optimalnog procesa sinteze/depozicije, i vr&scaron;enje strukturne i funkcionalne karakterizacije multiferoičnih vi&scaron;eslojnih tankih filmova, sačinjenih od naizmenično deponovanih feroelektričnih BaTiO₃ i fero/ferimagnetnih NiFe₂O₄ slojeva (uglavnom na silicijumskim supstratima sa slojem platine). Različite strukture slojeva dizajnirane su u cilju određivanja optimalne, koja bi dala najvi&scaron;e vrednosti magnetoelektričnog efekta.&nbsp;&nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; U prvom koraku, sintetisani su stabilni solovi/rastvori prekursora, veličine čestica od nekoliko nanometara, reolo&scaron;kih karakteristika pogodnih za depoziciju tehnikama iz tečne faze. Vi&scaron;eslojni filmovi su dobijeni &quot;spin&quot; procesom nano&scaron;enja, pri čemu je termički tretman svakog sloja na 500 &deg;C bio neophodan radi potpunog otparavanja zaostalog rastvarača. Filmovi bez pukotina, ukupne debljine ispod 1 &mu;m, uniformne debljine sloja (60 nm sloj BaTiO₃ i 40 nm sloj NiFe₂O₄) i ravne povr&scaron;ine mogu biti dobijeni sinterovanjem u temperaturnom opsegu od 750 do 900 &deg;C. Strukturna karakterizacija je potvrdila sistem bez prisustva sekundarnih faza, sačinjen od perovskitnog BaTiO₃ i spinelnog NiFe₂O₄. Dielektrična merenja su bila u saglasnosti sa mikrostrukturnom analizom, i vrednostima dielektrične konstante tipične za nanostrukturni sistem, niske vrednosti dielektričnih gubitaka i male provodljivosti. Uticaj međuslojne polarizacije, koja nalikuje Debajeovoj relaksaciji, izražena kroz povećanje dielektrične konstante uspod 100 kHz, bio je jači u nižoj frekventnoj regiji na povi&scaron;enim temperaturama usled termičke aktivacije nosilaca naelektrisanja u feritnoj fazi. Samo čist BaTiO₃ film je pokazao slab feroelektrični histerezis nepotpune saturacije, malo vi&scaron;e polarizacije filma sinterovanog na 900 &deg;C usled ogrubljivanja strukture. Meuđuslojni efekti su takođe primećeni kod feroelektričnih merenja na sobnoj temperaturi, sa izraženijim prisustvom kada se primeni jače električno polje. Na osnovu dielektričnih i feroelektričnih merenja, zaključeno je da film sa debljim titanatnim i tanjim feritnim slojevima ima najverovatnije najbolji dizajn slojeva. Magnetne histerezisne petlje su snimljene na sobnoj temperaturi za čiste NiFe₂O₄ filmove i vi&scaron;eslojne filmove. Analizom vi&scaron;eslojnih filmova različitog dizajna slojeva, pretpostavljeno je da zatezanje nastalo mehaničkom interakcijom između titanatnih i feritnih slojeva jeste prisutno, i da raste sa povećanjem broja kontaktnih povr&scaron;ina, stoga film sa tanjim titanatnim i feritnim slojevima verovatno predstavlja najbolji izbor sa aspekta megnetnih osobina.</p> / <p>Through history, discovery of new materials and material design have led to technological revolutions. In the last century, new materials with advanced properties have introduced electronic devices in our everyday lives. Microchip industry represents one huge part of world market, and needs constant development to provide better products to consumers. In the beginning of this century, a novel group of materials, called multiferroics, have attracted close attention of research society around the world. These materials have a unique property to express more than one ferroic property simultaneously (feroelectricity, ferromagneticity, ferroelasticity), and more important, to achieve coupling between them. Namely, magnetization of multieferroic may be changed with application of external electric field, and they can be polarized with application of the external magnetic field. This is a very interesting property that opens the potential applications in fields of hybrid computer memory, sensors, actuators, etc. In the middle of last century, single phase multiferroics were the first to trigger interest in this special property, but in recent years, composite multiferroics have shown more promising results in terms of functional properties. The trend of miniaturization is also present in this field, so multiferroic thin films are very attractive for research not only because of low power and material consumption or small size, but also because of strong magnetoelectric coupling.<br />The main goal of this thesis was to determine optimal synthesis/deposition process, and perform structural and functional characterization of multiferroic multilayer thin films, composed of ferroelectric BaTiO3 and ferro/ferrimagnetic NiFe2O4 layers in alternating order (mostly on platinum coated silicon substrates). Different layer structures were designed in order to find optimal one which could show the strongest magnetoelectric effect.<br />In the first step, stable precursor sols/solutions were synthesized, with particle size of a few nanometes, and rheological properties suitable for solution deposition. The multilayered thin films were obtained by spin coating and thermal treatment of each layer on 500 &deg;C was necessary in order to completely evaporate traces of residual solvents. Crack free films with overall thickness below 1 &mu;m, uniform single layer thickness (60 nm of BaTiO3 layer and 40 nm of NiFe2O4) and flat surface can be obtained by sintering in temperature range from 750 to 900 &deg;C. Structural characterization confirmed that secondary phase free system with microstructure on nanometer scale was obtained, composed of perovskite BaTiO3 and spinel NiFe2O4. Dielectric measurements were in agreement with microstructural characterization, showing the values of dielectric constant typical for nanostructured system, low values of dielectric losses and low conductivity. The influence of interfacial polarization, resembling Debye behavior, expressed as a rise of dielectric constant below 100 kHz, was stronger in lower frequency range on higher temperatures due to thermal activation of mobile charge carriers in ferrite phase. Only the pure BaTiO3 films showed weak unsaturated ferroelectric hysteresis loops, with slightly higher polarization of films sintered on 900 &deg;C due to coarsening of the structure. The interface effects were also detected in ferroelectric measurements on room temperatures, showing increased presence when higher field is applied. Regarding dielectric and ferroelectric characterization, it was concluded that the multilayered films with thick titanate and thin ferrite layers may probably have the most promising layer design. Magnetic hysteresis loops were recorded on room temperatures for the pure NiFe2O4 and multilayers films. By analysis of different layer design of multilayers, it was assumed that mechanical straining between the ferrite and titanate layers may be present, and increases with the number of contact surfaces, thus the films with thinner titanate and ferrite layers may probably have the best layer design from aspect of magnetic properties.</p>

This work deals with the structural and dielectric properties of Bariumtitanate (BTO) / Strontiumtitanate (STO) superlattices. The investigations were carried during the research for a doctoral thesis on the IFW Dresden, Institute for Metallic Materials (under supervision of Prof. Schulz). These multilayers have been prepared on single crystalline STO of (100) and (111) orientated substrates. All films where grown in an epitaxial mode. Additional superlattices and Bariumstrontiumtitanate (BSTO) thin films on silicon substrates with platinum bottom electrodes have been prepared. Thereby, (111) fibre-textured polycrystalline superlattices were produced. According to our knowledge this result was achieved for the first time (is unique in the world at the moment). According to high resolution TEM investigations of (001) oriented superlattices multilayers with atomically thin interfaces without noticeable interdiffusion have been prepared. XRD pattern of a multilayer consisting of BTO and STO monolayers that have only a thickness adequate one unit cell of BTO respective STO confirm this assumption. Multilayers on (111) oriented STO substrates show a much higher interface roughness than (001) orientated films. Regarding to the examinations in this thesis it is suggested that the roughness is correlated with the reduction of internal stresses by deformation of the stack and not with interdiffusion between the monolayers. For electrical measurements the film thickness has been varied from 30 nm to 300 nm and the periodicity in the range from 0.8 nm to 20 nm. Additionally, BSTO films of equivalent thickness and integral chemical composition were produced. Dielectical measurements were carried out in the temperature range from 20 K to 600 K and hysteresis measurements were done. It has to be pointed out, that multilayers have always lower dielectrical performances then BSTO films. In all cases the dielectric constant (DC) decreases with decreasing film thickness. Multilayers of a small periodicity show the highest DC?s, decreasing with increasing monolayer thickness in all cases. The maximum of DC shifted with decreasing film thickness to higher temperatures thus correlating with an increase of the out of plane lattice parameter. In this paper the mismatch between the stack respectivly the BSTO layers and the substrate has widely been discussed. In the case of BSTO the dielectric data can be qualitatively explained with the theory of strained films, developed mainly by Pertsev, under the assumption of a strain gradient in the thin film. Strain effects do also play an important role in ferroelectric multilayers as well as size and coupling effects between the monolayers. An adequate theory for the description of the dielectric behaviour of the ferroelectric superlattice produced during this research does yet not exist. Some thesis where pointed out, which effects have to be essentially included in to a consistent theory of ferroelectric multilayer. Some practical tips are also given, how to prepare monolayers and superlattices with very high DC and exellent hysteretic behaviour. / Es wurden (001) und (111) orientierte symmetrische BTO/STO-Multilagen auf niobdotierten STO-Einkristallen abgeschieden. Hierbei wurde sowohl die Gesamtschichtdicke, als auch deren Periodizität variiert. Zum Vergleich wurden weiterhin Ba0.5Sr0.5TiO3-Mischschichten unterschiedlicher Dicke präpariert. Aus den HRTEM und XRD Untersuchungen kann geschlossen werden, dass alle erhaltenen Schichten sowohl phasenrein als auch perfekt biaxial texturiert sind. Im Falle der (001) orientierten Multilagen konnten atomar scharfe Grenzflächen zwischen Einzellagen erhalten werden, wobei sich die Einzellagendicke bis auf eine Monolage (0.4 nm) reduzieren lässt. Aus der Schichtdickenabhängigkeit von d(001), dem mittleren out-of-plane Gitterparameter der Schicht, wird geschlossen, dass die Schichten auf den STO-Einkristallen Spannungsgradienten in den Schicht-normalen besitzen und an der Grenzfläche zum Substrat am stärksten verspannt sind. Die (111) orientierten Multilagen auf den STO-Einkristallen zeigen gegenüber den Schichten auf den (100) orientierten STO-Einkristallen eine deutlich erhöhte Interfacerauhigkeit. Vermutet wird, dass dies einerseits durch die andere kristallographische Orientierung der Wachstumsnormalen bedingt ist, weil damit jeweils keine geschlossenen SrO- bzw. BaO- und TiO3-Lagen ausgebildet werden. Andererseits zeigen die TEM-Aufnahmen eine deutliche Zunahme der Welligkeit der Einzellagen mit wachsendem Abstand vom Substrat, die rein mechanischen Effekten zugeschrieben wird. Die Verwölbung der Einzellagen könnte damit der Reduzierung der mechanischen Energie innerhalb des Systems dienen, wobei die Netzebenen dem Verlauf der Einzellagen folgen. Auf platinbeschichteten Siliziumsubstraten konnten erstmals phasenreine (111) fasertexturierte Mischschichten und BTO/STO-Multilagen abgeschieden werden. Grundlage hierfür war die Optimierung des Pt/Ti/SiO2/Si Schichtsystems hinsichtlich seiner thermischen Stabilität bis zu 800°C. Die Textur der Schichten wird von der Platingrundelektrode übernommen und deren Rauhigkeit teilweise verstärkt. Eine mechanische Verwölbung der Einzellagen konnte hier nicht beobachtet werden. Für die elektrischen Messungen wurden auf allen Schichten etwa 50 nm dicke Platinelektroden durch eine Hartmaske mittels Elektronenstrahlverdampfung im Hochvakuum bei etwa 300°C aufgebracht. Anschließend wurden die Schichten an Luft getempert, um das Sauerstoffdefizit, dass sich bei der Elektrodenabscheidung einstellt, auszugleichen. Die elektrischen Messungen zeichnen sich durch den sehr großen untersuchten Temperaturbereich aus. Temperaturabhängige Messungen im Bereich von 30-600 K finden sich für ferroelektrische Dünnschichten sehr selten in der Literatur und stellen für BTO/STO-Multilagen ein Novum dar. Auch die biasabhängige und teilweise auch temperaturabhängige Messung der Kapazität der Multilagen (C-V-Messungen) ist bisher einmalig. Durch die temperaturabhängigen Hysteresemessungen wurden Einblicke in den elektrischen Polungszustand der Schichten erhalten. Dadurch wird eine sinnvolle Interpretation der &amp;amp;#949;(T)-Kurven erst möglich. Der Vorteil der Integration des Polarisationsstromes unter Verwendung einer Dreieckspannung als Messsignal besteht in der direkten physikalischen Aussage der Strom-Spannungskurven über die Schaltspannung der Schichten.

This work deals with the structural and dielectric properties of Bariumtitanate (BTO) / Strontiumtitanate (STO) superlattices. The investigations were carried during the research for a doctoral thesis on the IFW Dresden, Institute for Metallic Materials (under supervision of Prof. Schulz). These multilayers have been prepared on single crystalline STO of (100) and (111) orientated substrates. All films where grown in an epitaxial mode. Additional superlattices and Bariumstrontiumtitanate (BSTO) thin films on silicon substrates with platinum bottom electrodes have been prepared. Thereby, (111) fibre-textured polycrystalline superlattices were produced. According to our knowledge this result was achieved for the first time (is unique in the world at the moment). According to high resolution TEM investigations of (001) oriented superlattices multilayers with atomically thin interfaces without noticeable interdiffusion have been prepared. XRD pattern of a multilayer consisting of BTO and STO monolayers that have only a thickness adequate one unit cell of BTO respective STO confirm this assumption. Multilayers on (111) oriented STO substrates show a much higher interface roughness than (001) orientated films. Regarding to the examinations in this thesis it is suggested that the roughness is correlated with the reduction of internal stresses by deformation of the stack and not with interdiffusion between the monolayers. For electrical measurements the film thickness has been varied from 30 nm to 300 nm and the periodicity in the range from 0.8 nm to 20 nm. Additionally, BSTO films of equivalent thickness and integral chemical composition were produced. Dielectical measurements were carried out in the temperature range from 20 K to 600 K and hysteresis measurements were done. It has to be pointed out, that multilayers have always lower dielectrical performances then BSTO films. In all cases the dielectric constant (DC) decreases with decreasing film thickness. Multilayers of a small periodicity show the highest DC?s, decreasing with increasing monolayer thickness in all cases. The maximum of DC shifted with decreasing film thickness to higher temperatures thus correlating with an increase of the out of plane lattice parameter. In this paper the mismatch between the stack respectivly the BSTO layers and the substrate has widely been discussed. In the case of BSTO the dielectric data can be qualitatively explained with the theory of strained films, developed mainly by Pertsev, under the assumption of a strain gradient in the thin film. Strain effects do also play an important role in ferroelectric multilayers as well as size and coupling effects between the monolayers. An adequate theory for the description of the dielectric behaviour of the ferroelectric superlattice produced during this research does yet not exist. Some thesis where pointed out, which effects have to be essentially included in to a consistent theory of ferroelectric multilayer. Some practical tips are also given, how to prepare monolayers and superlattices with very high DC and exellent hysteretic behaviour. / Es wurden (001) und (111) orientierte symmetrische BTO/STO-Multilagen auf niobdotierten STO-Einkristallen abgeschieden. Hierbei wurde sowohl die Gesamtschichtdicke, als auch deren Periodizität variiert. Zum Vergleich wurden weiterhin Ba0.5Sr0.5TiO3-Mischschichten unterschiedlicher Dicke präpariert. Aus den HRTEM und XRD Untersuchungen kann geschlossen werden, dass alle erhaltenen Schichten sowohl phasenrein als auch perfekt biaxial texturiert sind. Im Falle der (001) orientierten Multilagen konnten atomar scharfe Grenzflächen zwischen Einzellagen erhalten werden, wobei sich die Einzellagendicke bis auf eine Monolage (0.4 nm) reduzieren lässt. Aus der Schichtdickenabhängigkeit von d(001), dem mittleren out-of-plane Gitterparameter der Schicht, wird geschlossen, dass die Schichten auf den STO-Einkristallen Spannungsgradienten in den Schicht-normalen besitzen und an der Grenzfläche zum Substrat am stärksten verspannt sind. Die (111) orientierten Multilagen auf den STO-Einkristallen zeigen gegenüber den Schichten auf den (100) orientierten STO-Einkristallen eine deutlich erhöhte Interfacerauhigkeit. Vermutet wird, dass dies einerseits durch die andere kristallographische Orientierung der Wachstumsnormalen bedingt ist, weil damit jeweils keine geschlossenen SrO- bzw. BaO- und TiO3-Lagen ausgebildet werden. Andererseits zeigen die TEM-Aufnahmen eine deutliche Zunahme der Welligkeit der Einzellagen mit wachsendem Abstand vom Substrat, die rein mechanischen Effekten zugeschrieben wird. Die Verwölbung der Einzellagen könnte damit der Reduzierung der mechanischen Energie innerhalb des Systems dienen, wobei die Netzebenen dem Verlauf der Einzellagen folgen. Auf platinbeschichteten Siliziumsubstraten konnten erstmals phasenreine (111) fasertexturierte Mischschichten und BTO/STO-Multilagen abgeschieden werden. Grundlage hierfür war die Optimierung des Pt/Ti/SiO2/Si Schichtsystems hinsichtlich seiner thermischen Stabilität bis zu 800°C. Die Textur der Schichten wird von der Platingrundelektrode übernommen und deren Rauhigkeit teilweise verstärkt. Eine mechanische Verwölbung der Einzellagen konnte hier nicht beobachtet werden. Für die elektrischen Messungen wurden auf allen Schichten etwa 50 nm dicke Platinelektroden durch eine Hartmaske mittels Elektronenstrahlverdampfung im Hochvakuum bei etwa 300°C aufgebracht. Anschließend wurden die Schichten an Luft getempert, um das Sauerstoffdefizit, dass sich bei der Elektrodenabscheidung einstellt, auszugleichen. Die elektrischen Messungen zeichnen sich durch den sehr großen untersuchten Temperaturbereich aus. Temperaturabhängige Messungen im Bereich von 30-600 K finden sich für ferroelektrische Dünnschichten sehr selten in der Literatur und stellen für BTO/STO-Multilagen ein Novum dar. Auch die biasabhängige und teilweise auch temperaturabhängige Messung der Kapazität der Multilagen (C-V-Messungen) ist bisher einmalig. Durch die temperaturabhängigen Hysteresemessungen wurden Einblicke in den elektrischen Polungszustand der Schichten erhalten. Dadurch wird eine sinnvolle Interpretation der &amp;amp;#949;(T)-Kurven erst möglich. Der Vorteil der Integration des Polarisationsstromes unter Verwendung einer Dreieckspannung als Messsignal besteht in der direkten physikalischen Aussage der Strom-Spannungskurven über die Schaltspannung der Schichten.

Made available in DSpace on 2016-06-02T20:16:51Z (GMT). No. of bitstreams: 1 5339.pdf: 3033412 bytes, checksum: 3e684081236853aacfacccef70bd4635 (MD5) Previous issue date: 2009-10-02 / Financiadora de Estudos e Projetos / Lead titanate zirconate modified with lanthanum, or PLZT, is one the most ferroelectric compounds utilized in electronic devices, due to its versatility and low production costs in comparison with single-crystalline materials. When adequately prepared, this system presents good optical (high optical transmission) properties, in the visible and near infrared range, and can be electro-optically characterized. Recently, in the end of 90 s, it was verified its high potential as host of photoluminescent ions, as the lanthanide (rare-earth) family. The possibility to use its electro-optic properties (due to its ferroelectric characteristics) and its photoluminescent properties (achieved by the doping process) together ,enlarges the range of application of this system. In this way, the electro-optical characterization of doped PLZT ceramics becomes essential, besides the photonic characterization. In this work, the Senarmont compensator method for electro-optical characterization, or dynamic method, was instrumented, and the values of the induced (due to the quadratic electrooptic effect, Kerr) and permanent (due to the linear electro-optic effect, Pockels) birefringence were determined as a function of the temperature, wave-length and electric-field frequency, of the rare-earth (Nd2O3, Ho2O3, Er2O3, Tm2O3 e Yb2O3) doped PLZT, with La/Zr/Ti=9/65/35, ceramics. The results shown a relationship between of the electro-optic (electro-optic coefficients, or birefringence values) and the dielectric, ferroelectric and structural properties (studied in others works) of the ceramics, that were related with the site occupancy and the structural defects due to the aliovalent dopant. It also can be identified two distinct birefringence dependence as a function of the electric field, for the same electro-optic effect (Kerr, or Pockels), identified as a function of the doping process. In the case of electro-optical characterizations in function of the variable frequency, was observed an agreement with the characterization ferroelectric results made in other works in GCFerr, being evidenced the reduction of electro-optical properties with increasing frequency, where if it observed the occurrence of anomalies in the Pockels response with direct influence on the response Kerr. The characterization as a function of wavelength showed the occurrence of two types of behavior depending on the dopant ion used, being one of them the reduction of the values of birefringence with increasing wavelength (the samples pure and doped ions neodymium (Nd) and ytterbium (Yb)), with a tendency to expected behavior in the literature, however, in the second was seen irregular increase birefringence with increase wavelength (for samples doped with ions holmio ( Ho), erbium (Er) and thulium (Tm),not existing relation with to the theoretical models adopted. In relation the characterization as a function of temperature, this was carried through in a temperature interval that understood the characteristic temperatures of systems relaxores (freezing temperature (TF), the maximum dielectric permittivity (TM (e)) and Burns (TB)), except for the sample doped with neodymium ions, whose freezing temperature is below interval worked. By the curve of birefringence (&#916;&#61472;n) as a function of temperature was possible to determine the temperature of maximum birefringence for each of the samples, correlated them with each other. Through the curve (d &#916;&#61472;n / dt) vs. T was possible to identify a relationship between the maximum variations, positive and negative birefringence with the temperature characteristics TF and TB. / Entre os sistemas ferroelétricos, o sistema titanato zirconato de chumbo modificado com lantânio (PLZT) é um dos mais amplamente utilizados em dispositivos eletrônicos, dada sua versatilidade em aplicações e relação de custo quando comparado aos materiais monocristalinos utilizados nessa mesma área. Quando preparado pelo devido método de síntese, apresenta excelentes propriedades óticas (altos valores de transmissão ótica) desde a região do visível ao infravermelho próximo, possibilitando uma adequada caracterização de suas propriedades óticas e eletro-óticas. Recentemente, a partir do final da década de 90, foi verificada sua alta potencialidade como matriz hospedeira para íons fotoluminescentes, como os da família dos lantanídeos (ou terras-raras). A possibilidade do uso conjunto das propriedades eletro-óticas (dado seu caráter ferroelétrico) e de suas propriedades luminescentes (devido à incorporação de dopantes laser-ativos) aumentou ainda mais a possibilidade de aplicação desses materiais. Desse modo, a caracterização eletro-ótica das cerâmicas de PLZT dopado torna-se indispensável, além de sua caracterização fotônica. Sendo assim, neste trabalho foi instrumentado um sistema de caracterização eletro-ótica, utilizando o método do compensador Senarmont, também conhecido como método dinâmico, para determinar os valores da birrefringência induzida (devido ao efeito eletro-ótico quadrático, Kerr) e a permanente (devido ao efeito eletro-ótico linear, Pockels) em função da temperatura, comprimento de onda e frequência do campo elétrico de prova para composições cerâmicas de PLZT na razão La/Zr/Ti=9/65/35, dopadas com os óxidos terras-raras Nd2O3, Ho2O3, Er2O3, Tm2O3 e Yb2O3, na quantidade de 1,0% em peso. Os resultados mostraram que há uma relação entre as propriedades eletro-óticas encontradas (seja na forma de valores dos coeficientes eletro-óticos, ou na variação da birrefringência) com as propriedades dielétricas, ferroelétricas e estruturais (já observadas em outros trabalhos do grupo de pesquisa no qual esta dissertação foi realizada) das cerâmicas que, por sua vez, foram relacionadas com o tipo de ocupação e de defeitos gerados devido à incorporação dos dopantes. Além disso, foi possível observar que para uma mesma composição pode ocorrer a presença dos dois tipos de efeitos eletro-óticos - Kerr e Pockels - com proporções distintas em função do tipo de dopante. Através desse método, para esse conjunto de amostras, também foi possível identificar dois tipos distintos de variações da birrefringência em função do campo elétrico para um mesmo efeito eletro-ótico (Kerr, ou Pockels), que também puderam ser associados com o tipo de ocupação dos dopantes. Em se tratando das caracterizações eletro-óticas em função da variável frequência, foi observada uma concordância com os resultados da caracterização ferroelétrica, realizada em outros trabalhos no GCFErr, sendo evidenciada a redução das propriedades eletro-óticas com o aumento da frequência, em que se observou a ocorrência de anomalias na resposta Pockels com influência direta na resposta Kerr. A caracterização como uma função do comprimento de onda mostrou a ocorrência de dois tipos de comportamentos, dependendo do íon dopante utilizado, sendo um deles a redução dos valores da birrefringência com o aumento do comprimento de onda (caso das amostras pura e dopadas com os íons neodímio (Nd) e itérbio (Yb)), havendo certa tendência ao comportamento previsto em literatura, no entanto, no segundo caso foi constatado o aumento irregular da birrefringência com o aumento do comprimento de onda (caso das amostras dopadas com os íons holmio (Ho), érbio (Er) e túlio (Tm), não havendo relação com os modelos teóricos adotados. Quanto à caracterização em função da temperatura, esta foi realizada em um range de que compreendeu as temperaturas características de sistemas relaxores (de freezing (TF(e)), máxima permissividade dielétrica (TM(e)) e Burns (TB(e))), exceto para a amostra dopada com o íon neodímio, cuja TF(e) estava abaixo do intervalo considerado. Através da curva de birrefringência (&#916;n) em função da temperatura foi possível determinar a temperatura de máxima birrefringência para cada uma das amostras, correlacionado-as entre si. Através da curva de (d&#916;n/dt) vs. T, foi possível constatar uma relação entre as máximas variações, positiva e negativa, da birrefringência com as temperaturas características TF e TB.