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In this dissertation, methods to synthesize ZnO are reported. First, zinc oxide nanoparticles were synthesized with small amounts of transition metal ions to create materials called dilute magnetic semiconductors (DMS). We employed a low temperature sol-gel method that produces ZnO nanoparticles of reproducible size and incorporates cobalt, nickel, and manganese ions into the nanoparticles. Conditions were controlled such that a range of amounts of Co, Ni, and Mn were incorporated. The incorporation was tracked by color changes in the white ZnO powder to blue for Co, green for Ni and yellow for Mn. XRD measurements showed the nanoparticles were on the order of 10 nm in diameter and had a wurtzite structure. Magnetic measurements showed a change from diamagnetic to paramagnetic behavior with increasing concentration of metal dopants. Second, formation of ZnO single crystal hexagonal prisms from a sol-gel method is presented. The method required water, zinc acetate, and ethanolamine to create a gel of zinc hydroxide and zinc hydroxide acetate, which upon heating formed single crystal hexagonal prisms. Characterization of the gel was done by XRD as well as XRD high temperature chamber (HTK) to determine the role of temperature in prism formation. SEM images showed hexagonal prisms were of uniform size (0.5 × 2 µm.) TEM and electron diffraction images showed a change from randomly oriented particles to an ordered single crystal after heating. Water and the acetate salt of zinc proved to be critical to prism formation. Lastly, we report absorption and fluorescence properties of synthesized oligothiophenes and oligothiophene-ruthenium complexes that are bound to CdSe nanoparticles. Their ability to act as sensitizers and charge transfer junctions was tested. It was found that fluorescence of CdSe nanoparticles was quenched when they were bound to the oligothiophenes, and that the fluorescence of the oligothiophenes was also quenched. The fluorescence lifetimes of the quenched species were shortened.

Contemporary diagnostics rely on expensive, time-consuming, and optically-limited mechanisms that prevent at-home point-of-care molecular diagnostics with the accuracy of laboratory tools and the convenience of affordability. In this Thesis, biosensing was explored with commercial two-dimensional (2D) materials which have been investigated extensively over the last two decades yielding a variety of sensor metrics for detecting biomolecules. 2D materials have intrinsic properties that depend on the quality of material and substrate surface being employed. Here, graphene/SiO2 and monolayer hexagonal boron nitride (hBN) capping layer on graphene/SiO2 field-effect transistors (FETs) were used. Until recently, monolayer hBN has not been commercially available at the wafer-scale and has been observed in the literature to augment the properties of graphene-based devices and better control of processing repeatability. The work in this Thesis combines biochemistry with the wafer-scale production and surface-dependent properties of graphene and monolayer hBN/graphene via a FET fabrication process circumventing the use of photoresist. This was done to avoid photoresist resin that may contaminate the transducer surface and contribute to repeatability issues when studying biochemistry with 2D materials. Briefly, surface engineering of graphene/SiO2 and hBN/graphene/SiO2 was done, and the transfer characteristics were measured as a function of either the concentration of protons, genes, or proteins. Compared to bare 2D materials, the pH sensitivity of the shift in Dirac voltage was enhanced to -99 mV/pH when using 8.6 nm of Al2O3 on hBN/graphene/SiO2 FET. Graphene devices were then engineered for sensing SARS-CoV-2 genome with a signal-to-noise ratio of 3 at 100 aM and a linearized sensitivity of +22 mV/molar decade of SARS-CoV-2 ribonucleic acid and a dynamic range of four orders of magnitude. This was done by conjugating single-stranded deoxyribonucleic acid to sub-percolation threshold gold nanofilms deposited directly on the graphene sensing mesa. Finally, the 2D devices were studied for detecting SARS-CoV-2 spike protein after being functionalized with rabbit immunoglobulin G (IgG) monoclonal antibody (mAb). Additionally, preliminary work was done regarding the partial reduction and fragmentation of anti-SARS-CoV-2 spike protein human mAb IgG in an approach to leverage gold-thiol chemistry for covalently bonding the IgG to the 2D sensing mesa. In summary, the utilization of wide- and zero-bandgap nanomaterials may have profound implications in augmenting molecular diagnosis and treatment of disease through economically decentralizing biosensing. / 2024-01-20T00:00:00Z

This work presents a step forward in the use of 2D layered materials (2DLM), specifically hexagonal boron nitride (h-BN), for the fabrication of memristors. In this study, we fabricate, characterize, and use h-BN based memristors with Ag/few-layer h-BN/Ag structure to implement a fully functioning artificial leaky integrate-and-fire neuron on hardware. The devices showed volatile resistive switching behavior with no electro-forming process required, with relatively low VSET and long endurance of beyond 1.5 million cycles. In addition, we present some of the failure mechanisms in these devices with some statistical analyses to understand the causes, as well as a statistical study of both cycle-to-cycle and device-to-device variabilities in 20 devices. Moreover, we study the use of these devices in implementing a functioning artificial leaky integrate-and-fire neuron similar to a biological neuron in the brain. We provide SPICE simulation as well as hardware implementation of the artificial neuron that are in full agreement, showing that our device could be used for such application. Additionally, we study the use of these devices as an activation function for spiking neural networks (SNNs) by providing a SPICE simulation of a fully trained network, where the artificial spiking neuron is connected to the output terminal of a crossbar array. The SPICE simulations provide a proof of concept for using h-BN based memristor for activation function for SNNs.

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<p dir="ltr">Quantum sensing and information processing rely increasingly on solid-state spin defects, which offer robust qubit candidates at room temperature. Among these, nitrogen-vacancy (NV) centers in diamond have been extensively studied, but the discovery of spin defects in two-dimensional (2D) van der Waals (vdW) materials, particularly hexagonal boron nitride (hBN), has opened new avenues for compact, scalable quantum devices. The unique 2D structure of hBN enables its integration into nanoscale devices, where spin defects like the negatively charged boron vacancy serve as optically addressable qubits with promising optically detected magnetic resonance (ODMR) properties, making them highly suitable for ambient-condition quantum sensors and information storage.</p><p><br></p><p dir="ltr">The first part of this dissertation investigates the controlled generation, characterization, and functionalization of spin defects in hBN, focusing on boron vacancy defect ensembles. Techniques such as laser writing and ion implantation are used to create these defects, while plasmonic enhancement strategies significantly improve brightness and optical visibility. Pulsed ODMR measurements are used to analyze the spin coherence properties, revealing extended coherence times crucial for high-sensitivity applications.</p><p><br></p><p dir="ltr">In the second part, we explore carbon-related defects within both hBN and boron nitride nanotubes (BNNTs), where single defects exhibit unique hyperfine interactions. By combining experimental studies with density functional theory (DFT) calculations, this work identifies the atomic structures and electronic properties of these carbon-based defects. In BNNTs, carbon-related spin defects are examined for their potential in high-resolution magnetic imaging when used in scanning probe microscopy.</p><p><br></p><p dir="ltr">This research advances our understanding of spin defects in 2D materials, laying essential groundwork for future innovations in quantum information storage, nanoscale magnetic sensing and on-chip quantum technologies.</p>

Yes / In this article, a novel uniplanar ultra‐wideband (UWB) stop frequency selective surface (FSS) was miniaturized to maximize the gain of a compact UWB monopole antenna for microwave imaging applications. The single‐plane FSS unit cell size was only 0.095λ × 0.095λ for a lower‐operating frequency had been introduced, which was miniaturized by combining a square‐loop with a cross‐dipole on FR4 substrate. The proposed hexagonal antenna was printed on FR4 substrate with coplanar waveguide feed, which was further backed at 21.6 mm by 3 × 3 FSS array. The unit cell was modeled with an equivalent circuit, while the measured characteristics of fabricated FSS array and the antenna prototypes were validated with the simulation outcomes. The FSS displayed transmission magnitude below −10 dB and linear reflection phase over the bandwidth of 2.6 to 11.1 GHz. The proposed antenna prototype achieved excellent gain improvement about 3.5 dBi, unidirectional radiation, and bandwidth of 3.8 to 10.6 GHz. Exceptional agreements were observed between the simulation and the measured outcomes. Hence, a new UWB baggage scanner system was developed to assess the short distance imaging of simulated small metallic objects in handbag model. The system based on the proposed antenna displayed a higher resolution image than the antenna without FSS.