The field of infrared (IR) detector technology has shown vast improvements in terms of speed and performance over the years. Specifically the dynamic range (DR) and sensitivity of detectors showed significant improvements. The most commonly used technique of implementing these IR detectors is the use of charge-coupled devices (CCD). Recent developments show that the newly investigated bipolar complementary metal-oxide semiconductor (BiCMOS) devices in the field of detector technology are capable of producing similar quality detectors at a fraction of the cost. Prototyping is usually performed on low-cost silicon wafers. The band gap energy of silicon is 1.17 eV, which is too large for an electron to be released when radiation is received in the IR band. This means that silicon is not a viable material for detection in the IR band. Germanium exhibits a band gap energy of 0.66 eV, which makes it a better material for IR detection. This research is aimed at improving DR and sensitivity in IR detectors. CCD technology has shown that it exhibits good DR and sensitivity in the IR band. CMOS technology exhibits a reduction in prototyping cost which, together with electronic design automation software, makes this an avenue for IR detector prototyping. The focus of this research is firstly on understanding the theory behind the functionality and performance of IR detectors. Secondly, associated with this, is determining whether the performance of IR detectors can be improved by using silicon germanium (SiGe) BiCMOS technology instead of the CCD technology most commonly used. The Simulation Program with Integrated Circuit Emphasis (SPICE) was used to realise the IR detector in software. Four detectors were designed and prototyped using the 0.35 µm SiGe BiCMOS technology from ams AG as part of the experimental verification of the formulated hypothesis. Two different pixel structures were used in the four detectors, which is the silicon-only p-i-n diodes commonly found in literature and diode-connected SiGe heterojunction bipolar transistors (HBTs). These two categories can be subdivided into two more categories, which are the single-pixel-single-amplifier detectors and the multiple-pixel-single-amplifier detector. These were needed to assess the noise performance of different topologies. Noise influences both the DR and sensitivity of the detector. The results show a unique shift of the detecting band typically seen for silicon detectors to the IR band, accomplished by using the doping feature of HBTs using germanium. The shift in detecting band is from a peak of 250 nm to 665 nm. The detector still accumulates radiation in the visible band, but a significant portion of the near-IR band is also detected. This can be attributed to the reduced band gap energy that silicon with doped germanium exhibits. This, however, is not the optimum structure for IR detection. Future work that can be done based on this work is that the pixel structure can be optimised to move the detecting band even more into the IR region, and not just partially. / Dissertation (MEng)--University of Pretoria, 2013. / Electrical, Electronic and Computer Engineering / unrestricted

L’objet de la thèse est la modélisation de systèmes hétérogènes intégrant différents domaines de la physique et à signaux mixtes, numériques et analogiques (AMS). Une étude approfondie de différentes techniques d’extraction et de calibration de modèles comportementaux de composants analogiques à différents niveaux d’abstraction et de précision est présentée. Cette étude a mis en lumière trois approches principales qui ont été validées par la modélisation de plusieurs applications issues de divers domaines: un amplificateur faible bruit (LNA), un capteur chimique basé sur des ondes acoustiques de surface (SAW), le développement à plusieurs niveaux d’abstraction d’un capteur CMOS vidéo, et son intégration dans une plateforme industrielle. Les outils développés sont basés sur les extensions AMS du standard IEEE 1666 SystemC mais les techniques proposées sont facilement transposables à d’autres langages tels que VHDL-AMS ou Verilog-AMS utilisés en conception de dispositifs mixtes. / The thesis objective is the modeling of heterogeneous systems. Such systems integrate different physical domains (mechanical, chemical, optical or magnetic) therefore integrate analog and mixed- signal (AMS) parts. The aim is to provide a methodology based on high-level modeling for assisting both the design and the verification of AMS systems. A study on different techniques for extracting behavioral models of analog devices at different abstraction levels and computational weights is presented. Three approaches are identified and regrouped in three techniques. These techniques have been validated through the virtual prototyping of different applications issued from different domains: a low noise amplifier (LNA), a surface acoustic wave-based (SAW) chemical sensor, a CMOS video sensor with models developed at different abstraction levels and their integration within an industrial platform. The flows developed are based on the AMS extensions of the SystemC (IEEE 1666) standard but the methodologies can be implemented using other Analog Hardware Description Languages (VHDL-AMS, Verilog-AMS) typically used for mixed-signal microelectronics design.