Hui Yat Wai. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1993. / Includes bibliographical references (leaves 106-108). / Acknowledgments / Abstract / Chapter 1. --- Introduction --- p.1 / Chapter 2. --- Theory / Chapter 2.1 --- Optical Waveguide --- p.4 / Chapter 2.1.1 --- Optical Waveguide Classification / Chapter 2.1.2 --- Theoretical Analysis of 2-dimensional Step Index Waveguides / Chapter 2.2 --- Optical Waveguides Measurement --- p.18 / Chapter 2.2.1 --- Refractive Index Measurement / Chapter 2.2.2 --- Loss Measurement / Chapter 2.3 --- Ion Implantation and Annealing --- p.36 / Chapter 2.4 --- Refractive Index Change --- p.40 / Chapter 3. --- Equipments and Their Experimental Setup / Chapter 3.1 --- Light Source-Laser Diode --- p.42 / Chapter 3.2 --- Ellipsometry Measurement System --- p.45 / Chapter 3.2.1 --- Ellipsometry Measurement System and its Existing Problems / Chapter 3.2.2 --- Improvement of the Original System / Chapter 3.2.3 --- System Calibration / Chapter 3.3 --- Reflectance Measurement System --- p.51 / Chapter 3.3.1 --- System Design and Setup / Chapter 3.3.2 --- System Calibration / Chapter 3.4 --- End-Coupling Measurement System --- p.56 / Chapter 3.4.1 --- System Setup / Chapter 3.4.2 --- System Calibration / Chapter 4. --- Experiment / Chapter 4.1 --- Samples Preparation --- p.77 / Chapter 4.2 --- Refractive Index Measurement by Ellipsometer --- p.80 / Chapter 4.3 --- Refractive Index Measurement by Reflectance --- p.84 / Chapter 4.4 --- Waveguide Measurement --- p.88 / Chapter 4.4.1 --- Fiber-Waveguide Coupling / Chapter 4.4.2 --- Lens-Waveguide Coupling / Chapter 5. --- Results and Discussion / Chapter 5.1 --- Refractive Index Change and Waveguide Formation --- p.94 / Chapter 5.2 --- Mechanism of Refractive Index Change --- p.100 / Chapter 6. --- Conclusion --- p.103 / Chapter 7. --- Improvement and Extension --- p.105 / Reference --- p.106 / Appendices / Chapter A. --- Thick.m --- p.VI / Chapter B. --- Distrib.m --- p.IX

by Mok Wing Keung. / Parallel title in Chinese characters. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1992. / Includes bibliographical references (leaves 149-154). / Acknowledgement --- p.i / Abstract --- p.ii / Table Of Contents --- p.iii / List Of Figures --- p.v / List Of Tables --- p.ix / List Of Plates --- p.x / Chapter Chapter One --- Introduction / Chapter 1.1 --- General introduction --- p.1 / Chapter 1.2 --- Gallium arsenide --- p.4 / Chapter 1.2.1 --- Basic facts --- p.4 / Chapter 1.2.2 --- Band structure --- p.6 / Chapter 1.2.3 --- Production of GaAs --- p.9 / Chapter 1.3 --- Ion implantation --- p.11 / Chapter 1.3.1 --- Principle of ion implantation --- p.11 / Chapter 1.3.2 --- Basic facts --- p.17 / Chapter 1.3.3 --- Radiation damage and annealing --- p.21 / Chapter 1.4 --- Optical measurements --- p.27 / Chapter 1.4.1 --- Basic facts --- p.27 / Chapter 1.4.2 --- Optical reflectance --- p.29 / Chapter 1.4.3 --- Oxide overlayer --- p.39 / Chapter Chapter Two --- Experimental / Chapter 2.1 --- Sample preparation --- p.42 / Chapter 2.2 --- Ion implantation --- p.46 / Chapter 2.2.1 --- Implantation parameters --- p.46 / Chapter 2.2.2 --- Computer modeling of implantation profiles --- p.48 / Chapter 2.3 --- Annealing --- p.57 / Chapter 2.3.1 --- Conventional annealing --- p.57 / Chapter 2.3.2 --- Rapid thermal annealing --- p.61 / Chapter 2.4 --- Optical reflectance measurement --- p.69 / Chapter 2.4.1 --- Principle of measurement --- p.69 / Chapter 2.4.1.1 --- Relative reflectance measurement --- p.71 / Chapter 2.4.1.2 --- Absolute reflectance measurement --- p.79 / Chapter 2.4.2 --- Error estimation and data reduction --- p.82 / Chapter 2.4.2.1 --- Error estimation --- p.84 / Chapter 2.4.2.2 --- Data reduction --- p.86 / Chapter 2.5 --- Optical microscopy and photoluminescence --- p.90 / Chapter Chapter Three --- Results And Discussion / Chapter 3.1 --- Surface morphology --- p.93 / Chapter 3.2 --- Optical reflectance measurement --- p.101 / Chapter 3.2.1 --- Reflectance spectrum --- p.101 / Chapter 3.2.1.1 --- Reference mirror --- p.101 / Chapter 3.2.1.2 --- Crystalline GaAs --- p.104 / Chapter 3.2.1.3 --- Implanted GaAs before annealing --- p.108 / Chapter 3.2.1.4 --- Conventional annealed GaAs --- p.115 / Chapter 3.2.1.5 --- Rapid thermal annealed GaAs (proximity) --- p.120 / Chapter 3.2.2 --- Extraction of optical constants --- p.128 / Chapter 3.2.2.1 --- Oxide overlayer --- p.128 / Chapter 3.2.2.2 --- Dielectric function --- p.132 / Chapter 3.3 --- Photoluminescence results --- p.143 / Chapter Chapter Four --- Conclusions And Suggestions For Further Work --- p.147 / References --- p.149

by Choi Kup Sze. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1994. / Includes bibliographical references. / Acknowledgement / Abstract / Chapter 1. --- Introduction --- p.1-1 / Chapter 1.1 --- Introduction --- p.1-1 / Chapter 1.2 --- References --- p.1-6 / Chapter 2. --- Theory of Optical Waveguides --- p.2-1 / Chapter 2.1 --- Theory of Planar Slab Waveguides --- p.2-2 / Chapter 2.2 --- Theory of Channel Dielectric Waveguides --- p.2-13 / Chapter 2.2.1 --- Marcatili's Method --- p.2-13 / Chapter 2.2.2 --- Effective Index Method --- p.2-20 / Chapter 2.3 --- References --- p.2-24 / Chapter 3. --- A Numerical Method for Optical Waveguides --- p.3-1 / Chapter 3.1 --- Introduction --- p.3-1 / Chapter 3.2 --- two-dimensional Fourier Series Expansion Method --- p.3-2 / Chapter 3.3 --- References --- p.3-13 / Chapter 4. --- Theory of Directional Couplers --- p.4-1 / Chapter 4.1 --- Dual-Channel Coupler --- p.4-1 / Chapter 4.2 --- Multi-channel Directional Coupler --- p.4-8 / Chapter 4.3 --- References --- p.4-9 / Chapter 5. --- Waveguide Formation by Ion Implantation --- p.5-1 / Chapter 5.1 --- Introduction --- p.5-1 / Chapter 5.2 --- Physics of Ion Implantation --- p.5-3 / Chapter 5.3 --- Lattice Damage and Annealing --- p.5-5 / Chapter 5.3.1 --- Lattice Damage --- p.5-5 / Chapter 5.3.2 --- Annealing --- p.5-6 / Chapter 5.4 --- Index Change due to Implantation --- p.5-8 / Chapter 5.5 --- Waveguide Processing Techniques --- p.5-10 / Chapter 5.5.1 --- Photolithography --- p.5-10 / Chapter 5.5.2 --- Processing Techniques --- p.5-11 / Chapter 5.6 --- References --- p.5-13 / Chapter 6. --- Optical Loss in Waveguides --- p.6-1 / Chapter 6.1 --- Loss Mechanisms in Optical Waveguides --- p.6-1 / Chapter 6.2 --- Principle of Propagation Loss Measurement --- p.6-4 / Chapter 6.2.1 --- Cut-back Method --- p.6-5 / Chapter 6.2.2 --- Scattering Light Method --- p.6-7 / Chapter 6.2.3 --- Fabry-Perot Interference Technique --- p.6-9 / Chapter 6.3 --- References --- p.6-16 / Chapter 7. --- Fabrication and Measurement of Optical Waveguides --- p.7-1 / Chapter 7.1 --- Fabrication of Optical Waveguides --- p.7-1 / Chapter 7.1.1 --- Fabrication of waveguides in GaAs by MeV oxygen ion implantation --- p.7-1 / Chapter 7.1.2 --- Waveguide End Facet Preparation --- p.7-4 / Chapter 7.2 --- Measurement of Optical Waveguides --- p.7-7 / Chapter 7.2.1 --- Laser Sources --- p.7-7 / Chapter 7.2.2 --- Guided Wave Excitation --- p.7-10 / Chapter 7.2.3 --- Intensity Profile Measurement --- p.7-17 / Chapter 7.2.4 --- Coupling Coefficient Measurement --- p.7-20 / Chapter 7.2.5 --- Propagation Loss Measurement --- p.7-25 / Chapter 7.3 --- References --- p.7-34 / Chapter 8. --- Results and Discussions --- p.8-1 / Chapter 8.1 --- Near Field Pattern Measurement --- p.8-1 / Chapter 8.2 --- Discussion on the Index Change of the Implanted GaAs --- p.8-5 / Chapter 8.3 --- Propagation Loss Measurement --- p.8-8 / Chapter 8.4 --- Observation of Optical Coupling in Directional Coupler --- p.8-14 / Chapter 8.5 --- References --- p.8-19 / Chapter 9. --- Conclusion --- p.9-1 / Chapter 10. --- Improvement and Extension --- p.10-1 / Appendix 1 Evaluation of the product〈n2 φuvφu'v'〉 --- p.A1-1 / Appendix 2 Transmission of Lossy Fabry-Perot Cavity --- p.A2-1 / Appendix 3 Effective Index versus Index Difference --- p.A3-1 / Appendix 4 Effect of Temperature on the Transmission of a Fabry-Perot Cavity --- p.A4-1 / Appendix 5 Evaluation of An from the Near Field Pattern --- p.A5-1

by Lai Kwong-Yu. / Thesis submitted in: December 1998. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references (leaves 90-101). / Abstracts in English and Chinese. / Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Metal Silicides --- p.1 / Chapter 1.2 --- Titanium Silicide --- p.8 / Chapter 1.3 --- Goal Of This Project --- p.10 / Chapter 2 --- Sample Preparation And Experimental Methods --- p.12 / Chapter 2.1 --- MEVVA Implantation --- p.12 / Chapter 2.2 --- Sample Preparation --- p.15 / Chapter 2.2.1 --- Implantation Condition --- p.15 / Chapter 2.2.2 --- Thermal Treatment --- p.19 / Chapter 2.3 --- Characterization Methods --- p.20 / Chapter 2.3.1 --- Sheet Resistivity Measurement --- p.22 / Chapter 2.3.2 --- X-Ray Diffraction (XRD) --- p.25 / Chapter 2.3.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.28 / Chapter 2.3.4 --- Transmission Electron Microscopy (TEM) --- p.31 / Chapter 3 --- Characterization of As-implanted Samples --- p.36 / Chapter 3.1 --- Introduction --- p.36 / Chapter 3.2 --- Dose Dependence Of As-implanted Samples --- p.37 / Chapter 3.2.1 --- Sheet Resistance Measurement --- p.37 / Chapter 3.2.2 --- X-Ray Diffraction (XRD) --- p.40 / Chapter 3.2.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.40 / Chapter 3.3 --- Implant Beam Current Dependence Of As-implanted Samples --- p.43 / Chapter 3.3.1 --- Sheet Resistance Measurement --- p.43 / Chapter 3.3.2 --- X-Ray Diffraction (XRD) --- p.44 / Chapter 3.3.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.46 / Chapter 3.4 --- Transmission Electron Microscopy (TEM) --- p.48 / Chapter 3.5 --- Summary --- p.52 / Chapter 4 --- Characterization of Annealed Samples --- p.57 / Chapter 4.1 --- Introduction --- p.57 / Chapter 4.2 --- Dose Dependence Of Annealed Samples --- p.58 / Chapter 4.2.1 --- Sheet Resistance Measurements --- p.58 / Chapter 4.2.2 --- X-Ray Diffraction (XRD) --- p.61 / Chapter 4.2.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.63 / Chapter 4.3 --- Implant Beam Current Dependence Of Annealed Samples --- p.66 / Chapter 4.3.1 --- Sheet Resistance Measurement --- p.66 / Chapter 4.3.2 --- X-Ray Diffraction (XRD) --- p.68 / Chapter 4.3.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.70 / Chapter 4.4 --- Annealing Temperature Dependence Of Annealed Samples --- p.71 / Chapter 4.4.1 --- Sheet Resistance Measurement --- p.71 / Chapter 4.4.2 --- X-Ray Diffraction (XRD) --- p.73 / Chapter 4.4.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.75 / Chapter 4.5 --- Annealing Time Dependence Of Annealed Samples --- p.78 / Chapter 4.5.1 --- Sheet Resistance Measurement --- p.78 / Chapter 4.5.2 --- X-Ray Diffraction (XRD) --- p.79 / Chapter 4.5.3 --- Rutherford Backscattering Spectroscopy (RBS) --- p.81 / Chapter 4.6 --- Transmission Electron Microscopy (TEM) --- p.82 / Chapter 4.7 --- Summary --- p.84 / Chapter 5 --- Conclusion --- p.87 / Chapter 5.1 --- Main Results Of This Work --- p.87 / Chapter 5.2 --- Suggestions To Future Works --- p.89 / Bibliography

Tsang Wei Mong. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references (leaves 86-93). / Abstracts in English and Chinese. / Abstract --- p.i / Acknowledgement --- p.iv / Contents --- p.v / List of Figure Captions --- p.vi / List of Table Captions --- p.vii / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.2 --- Theory of Electron Field Emission --- p.1 / Chapter 1.2.1 --- Fowler Nordheim Planar Field Emission Model for Metal --- p.2 / Chapter 1.3 --- Goal of this Project --- p.9 / Chapter Chapter 2 --- Sample Preparation and Characterization Methods / Chapter 2.1 --- Sample Preparation --- p.12 / Chapter 2.1.1 --- MEVVA Implantation System --- p.13 / Chapter 2.1.2 --- Implantation Conditions --- p.16 / Chapter 2.1.3 --- Simulation by SRIM --- p.17 / Chapter 2.2 --- Characterization Methods --- p.20 / Chapter 2.2.1 --- AFM and CAFM --- p.20 / Chapter 2.2.2 --- RBS --- p.22 / Chapter 2.2.3 --- XPS --- p.24 / Chapter 2.2.4 --- XRD --- p.27 / Chapter 2.2.5 --- TEM --- p.28 / Chapter 2.2.6 --- FE Measurement --- p.29 / Chapter Chapter 3 --- FE Properties of IBS SiC layers / Chapter 3.1 --- Introduction --- p.31 / Chapter 3.2 --- Field Enhancement Mechanisms for the IBS SiC Layers --- p.32 / Chapter 3.3 --- Embedded Conducting Grains (ECG) Model of Local Field Enhancement --- p.45 / Chapter 3.4 --- The Role of Conducting Grains in Field Enhancement --- p.48 / Chapter Chapter 4 --- FE Properties of W modified IBS SiC layer / Chapter 4.1 --- Introduction --- p.58 / Chapter 4.2 --- Experimental --- p.59 / Chapter 4.3 --- Phase and Structural Evolution of W Modified IBS SiC Layers --- p.60 / Chapter 4.3.1 --- XRD Results --- p.60 / Chapter 4.3.2 --- XPS Results --- p.64 / Chapter 4.3.3 --- TEM Results --- p.69 / Chapter 4.3.4 --- AFM Results --- p.74 / Chapter 4.4 --- Field Emission Properties --- p.76 / Chapter Chapter 5 --- Conclusion --- p.84 / Reference --- p.86 / List of Publications --- p.94 / Appendix --- p.96

by Kong Lim Pun. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2000. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Kong Lim Pun. / ABSTRACT --- p.i / 摘要 --- p.iii / ACNOWLEDGEMENT --- p.iv / TALE OF CONTENTS --- p.v / LIST OF FIGURES --- p.ix / LIST OF TABLES --- p.xi / Chapter CHAPTER 1 --- Introduction / Chapter 1.1 --- Nanoparticles and nanostructural materials --- p.1 / Chapter 1.2 --- Materials of copper-implanted and nickel-implanted fused silica --- p.4 / Chapter 1.2.1 --- Overview --- p.4 / Chapter 1.2.2 --- Formation of nanoparticles --- p.5 / Chapter 1.2.3 --- Optical properties of the material --- p.9 / Chapter 1.3 --- Goals of the project --- p.12 / Reference --- p.13 / Chapter CHAPTER 2 --- Background of Study / Chapter 2.1 --- Introduction --- p.15 / Chapter 2.2 --- Optical absorption of metal nanocluster composite glasses --- p.16 / Chapter 2.2.1 --- Dielectric constant --- p.16 / Chapter 2.2.2 --- The features of surface plasmon resonance peak --- p.16 / Chapter 2.3 --- Third-order optical nonlinearity of metal nanocluster composite glasses --- p.17 / Chapter 2.3.1 --- Classical field confinement --- p.19 / Chapter 2.3.2 --- Quantum confinement --- p.21 / Chapter 2.3.2.1 --- Intraband transitions --- p.21 / Chapter 2.3.2.2 --- Interband transitions --- p.22 / Chapter 2.3.2.3 --- Hot-electron transitions --- p.22 / Chapter 2.4 --- Preparation Methods of MNCG(s) --- p.23 / Chapter 2.4.1 --- Ion implantation --- p.23 / Chapter 2.4.2 --- Ion exchange --- p.23 / Chapter 2.4.3 --- Sputtering deposition --- p.24 / Chapter 2.4.4 --- Melt -quenching and heat-treatment processes --- p.25 / Chapter 2.4.5 --- Ion-beam assisted deposition --- p.25 / Chapter 2.5 --- Applications --- p.25 / Reference --- p.27 / Chapter CHAPTER 3 --- Instrumentation / Chapter 3.1 --- Introduction --- p.29 / Chapter 3.2 --- Metal Vapour Vacuum Arc (MEVVA) ion source implantation --- p.29 / Chapter 3.2.1 --- Background of MEVVA ion source --- p.29 / Chapter 3.2.2 --- Characteristics of MEVVA ion source --- p.32 / Chapter 3.2.3 --- Implantation conditions --- p.33 / Chapter 3.3 --- X-ray photoelectron spectroscopy --- p.34 / Chapter 3.3.1 --- Theory --- p.34 / Chapter 3.3.2 --- Qualitative analysis --- p.38 / Chapter 3.3.2.1 --- Chemical shift peaks --- p.40 / Chapter 3.3.2.2 --- Auger peaks --- p.40 / Chapter 3.3.2.3 --- Energy loss peaks --- p.40 / Chapter 3.3.3 --- Quantitative analysis --- p.41 / Chapter 3.3.3.1 --- Homogeneous system --- p.41 / Chapter 3.3.3.2 --- Determination of layer thickness --- p.45 / Chapter 3.3.4 --- Instrumental components of XPS --- p.47 / Chapter 3.3.4.1 --- Sample introduction system --- p.47 / Chapter 3.3.4.2 --- X-ray source --- p.49 / Chapter 3.3.5 --- Application to metal nanoclusters composite glasses --- p.49 / Chapter 3.3.5.1 --- Compositional analysis --- p.50 / Chapter 3.3.5.2 --- Depth profiling --- p.50 / Chapter 3.3.5.3 --- Auger parameter --- p.50 / Chapter 3.4 --- Transmission electron microscopy --- p.53 / Chapter 3.4.1 --- Basic instrumentation of TEM --- p.53 / Chapter 3.4.2 --- Preparation of TEM cross section specimen --- p.54 / Chapter 3.4.2.1 --- Cutting --- p.54 / Chapter 3.4.2.2 --- "Disc-cutting, grinding, dimpling " --- p.54 / Chapter 3.4.2.3 --- Ion beam thinning --- p.56 / Chapter 3.4.3 --- Image contrast of TEM --- p.56 / Chapter 3.4.4 --- Basic operations of TEM --- p.57 / Chapter 3.4.4.1 --- Bright field and dark field images --- p.57 / Chapter 3.4.4.2 --- Selected area diffraction (SAD) --- p.58 / Chapter 3.4.4.3 --- Convergent Beam Electron Diffraction --- p.59 / Reference --- p.60 / Chapter CHAPTER 4 --- Composition and Nano structure of Copper-implanted Fused Silica / Chapter 4.1 --- Introduction --- p.62 / Chapter 4.2 --- The Atomic Distribution and Chemical State of Copper Nanocluster --- p.64 / Chapter 4.3 --- TEM Studies of Copper Nanoclusters --- p.70 / Chapter 4.4 --- Theoretical Calculation on Ratio of Surface to Bulk Atoms of Copper Nanocluster --- p.73 / Chapter 4.5 --- Conclusions --- p.74 / Reference --- p.77 / Chapter CHAPTER 5 --- Composition and Nanostructure of Nickel-implanted Fused Silica / Chapter 5.1 --- Introduction --- p.79 / Chapter 5.2 --- The distribution of nickel nanoclusters --- p.80 / Chapter 5.3 --- TEM studies of nickel nanoclusters --- p.81 / Chapter 5.4 --- Chemical state of nickel clusters --- p.87 / Chapter 5.5 --- Discussion --- p.90 / Chapter 5.6 --- Conclusion --- p.90 / Reference --- p.92 / Chapter CHAPTER 6 --- Conclusions --- p.94

Chow Chi Fai. / Thesis submitted in: August 2005. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references. / Abstracts in English and Chinese. / Abstract / Abstract (Chinese) / A cknowledgements / Table of Contents / List of Figures / List of Tables / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- The need for light emission from silicon --- p.1-1 / Chapter 1.2 --- Silicon-based light emitting material 1 - --- p.2 / Chapter 1.3 --- Literature overview --- p.1-4 / Chapter 1.4 --- Project goal --- p.1-10 / Reference --- p.1-11 / Chapter Chapter 2 --- Experimental details / Chapter 2.1 --- Introduction --- p.2-1 / Chapter 2.2 --- Sample preparation techniques --- p.2-1 / Chapter 2.2.1 --- MEVVA ion implantation --- p.2-1 / Chapter 2.2.2 --- PL samples preparation conditions --- p.2-3 / Chapter 2.2.3 --- EL samples preparation conditions --- p.2-4 / Chapter 2.3 --- Characterization techniques --- p.2-7 / Chapter 2.3.1 --- Photoluminescence spectroscopy (PL) --- p.2-7 / Chapter 2.3.2 --- Electroluminescence spectroscopy (EL) --- p.2-9 / Chapter 2.3.3 --- Rutherford backscattering spectroscopy (RBS) --- p.2-10 / Chapter 2.3.4 --- X-ray diffraction (XRD) --- p.2-12 / Chapter 2.3.5 --- Transmission electron microscopy (TEM) --- p.2-13 / Reference --- p.2-15 / Chapter Chapter 3 --- Resutls and Discussions / Chapter 3.1 --- RBS results --- p.3-1 / Chapter 3.2 --- XRD results --- p.3-8 / Chapter 3.3 --- TEM results --- p.3-12 / Chapter 3.3.1 --- Effects of the implantation energy on the microstructure of samples --- p.3-13 / Chapter 3.3.2 --- Effects of the implantation dose on the microstructure of samples --- p.3-16 / Chapter 3.4 --- Photoluminescence results --- p.3-19 / Chapter 3.4.1 --- Effect of implantation energy on the PL --- p.3-19 / Chapter 3.4.2 --- Effect of FA temperature on the PL --- p.3-24 / Chapter 3.4.3 --- Effect of FA duration on the PL --- p.3-26 / Chapter 3.4.4 --- Effect ofRTA duration on the PL --- p.3-28 / Chapter 3.4.5 --- Effect ofRTA temperature on the PL --- p.3-30 / Chapter 3.4.6 --- Effect of implantation dose on the PL --- p.3-32 / Chapter 3.4.7 --- Si band edge enhancement --- p.3-34 / Chapter 3.4.8 --- Photoluminescence spectra as a function of excitation power density --- p.3-37 / Chapter 3.4.9 --- Photoluminescence spectra as a function of measurement temperature --- p.3-45 / Chapter 3.5 --- Electroluminescence results --- p.3-52 / Chapter 3.5.1 --- EL quantum efficiency --- p.3-60 / Reference --- p.3-61 / Chapter Chapter 4 --- Conclusion and future works / Chapter 4.1 --- Conclusion --- p.4-1 / Chapter 4.2 --- Future works --- p.4-2 / Appendix I / Appendix II

by Gao Yun. / "November 2002." / Thesis (Ph.D.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references (p. 165-171). / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

Orientadores: Ricardo Barini, Isabela Nelly Machado / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Ciências Médicas / Made available in DSpace on 2018-11-27T10:51:33Z (GMT). No. of bitstreams: 1 Klimesch_Yvonne_M.pdf: 1424571 bytes, checksum: a70b152ae87de0a973c2d34af4320957 (MD5) Previous issue date: 2014 / Resumo: Introdução: As altas taxas de falha de implantação embrionária vêm sendo uma das principais causas no insucesso dos ciclos de fertilização in vitro. A incompatibilidade imunológica entre o embrião e a decídua materna gera uma ineficiência na produção de anticorpos bloqueadores com um aumento no predomínio de citocinas do tipo Th1 que são prejudiciais ao processo da gestação. A imunoterapia com linfócitos paternos surge como tratamento adjuvante com a função de reverter essa alteração imunológica para um predomínio do tipo Th2 favorecendo assim a tolerância imunológica permitindo a implantação embrionária e posterior desenvolvimento gestacional aumentando as taxas nos ciclos de fertilização assistida. Objetivos: Avaliar o tratamento de imunização com linfócitos paternos, os resultados maternos fetais e perinatais dos casais que tiveram falhas de implantação em ciclos de fertilização in vitro (FIV/ICSI). Materiais e métodos: Através de busca ativa pelos prontuários médicos foram incluídos no estudo 52 casais que apresentavam pelo menos duas falhas nos ciclos de fertilização previamente a imunoterapia. A imunização com linfócitos paternos foi administrada via intradérmica a cada 21 dias, totalizando 3 doses. Após 3 semanas da última dose realizou-se o teste de crossmatch, cujo percentual aceito é superior a 75% para ser considerado positivo e assim indicando a sensibilização da paciente com antígenos de histocompatibilidade do esposo. Resultados: Dos 52 casais incluídos no estudo, 20 casais não conseguiram uma gestação e 32 casais conseguiram uma gestação. No grupo que engravidou, a taxa de gravidez clínica foi de 61,5% (32/52) e a taxa de gravidez viável foi de 57,7% (30/52). Das 32 gestações, 30 evoluíram para parto e duas evoluíram para aborto de primeiro trimestre. A taxa de prematuridade foi de 53%. Conclusão: A imunoterapia com linfócitos paternos pode aumentar as taxas de gestação em mulheres que tiveram falhas prévias nos ciclos de fertilização assistida / Abstract: Introduction: High rates of embryo implantation failures have been a major cause of failure in IVF cycles. The immunological incompatibility between the embryo and the maternal decidua produces inefficiency in the production of blocking antibodies with an increase in the predominance of Th1-type cytokines that are detrimental to the process of gestation. Immunotherapy with paternal lymphocytes appears as adjuvant treatment with immune function reverse this change to a predominance of Th2 thus promoting immune tolerance allowing embryonic development and subsequent gestational increasing implantation rates in assisted fertilization cycles.Objective: To evaluate the treatment of immunization with paternal lymphocytes, fetal and perinatal maternal outcomes of couples who had implantation failure in in vitro fertilization cycles (IVF / ICSI). Material and Methods: Through active search for medical records were included in the study 52 couples with at least two flaws in fertilization cycles prior to immunotherapy. The immunization with paternal lymphocytes was administered intradermic every 21 days, totaling 3 doses. 3 weeks after the last dose was held for the crossmatch test, which is accepted percentage above 75% to be considered positive, thus indicating awareness of patient histocompatibility antigens husband.Results: Of the 52 couples in the study, 20 couples failed gestation and 32 couples achieved a pregnancy. In the group who became pregnant, the clinical pregnancy rate was 61.5% (32/52) and the viable pregnancy rate was 57.7% (30/52). Of the 32 pregnancies, 30 evolved into childbirth and two progressed to first trimester abortion. The prematurity rate was 53%.Conclusions: Immunotherapy with paternal lymphocytes can increase pregnancy rates in women who had previous failures in assisted fertilization cycles / Mestrado / Saúde Materna e Perinatal / Mestra em Ciências da Saúde

by Chan Kwok Wai. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1997. / Includes bibliographical references (leaves 93-95). / ACKNOWLEDGEMENT --- p.i / ABSTRACT --- p.ii / LIST OF SYMBOLS --- p.iii / LIST OF FIGURES --- p.v / LIST OF TABLES --- p.vi / Chapter CHAPTER ONE --- INTRODUCTION --- p.1 / Chapter CHAPTER TWO --- SURVEYS ON ION IMPLANTATION DAMAGE STUDY --- p.6 / Chapter 2.1 --- Introduction --- p.6 / Chapter 2.1.1 --- Basic Theory --- p.7 / Chapter 2.1.2 --- Amorphization --- p.9 / Chapter 2.1.3 --- Amorphous Layer Regrowth --- p.10 / Chapter 2.1.4 --- Point Defect Sources --- p.11 / Chapter 2.1.5 --- Types of Extended Defects --- p.11 / Chapter 2.2 --- Nature of Point Defects --- p.15 / Chapter 2.2.1 --- Important Parameters --- p.15 / Chapter 2.2.2 --- Vacancy Centers in Semiconductor --- p.16 / Chapter 2.2.3 --- Self-interstitial in Silicon --- p.17 / Chapter 2.2.4 --- Distribution of Excess Point Defects --- p.18 / Chapter 2.2.5 --- Energy Level of Defect Species --- p.19 / Chapter CHAPTER THREE --- EXPERIMENTAL METHOD --- p.21 / Chapter 3.1 --- Experimental --- p.21 / Chapter 3.2 --- Spreading Resistance Profiling --- p.25 / Chapter CHAPTER FOUR --- MODELING OF SPREADING RESISTANCE PROFILES OF ION-IMPLANTED DAMAGE IN SILICON --- p.29 / Chapter 4.1 --- Introduction --- p.29 / Chapter 4.2 --- Basic equation --- p.30 / Chapter 4.3 --- Formation of Model --- p.34 / Chapter CHAPTER FIVE --- RESULTS AND DISCUSSION --- p.37 / Chapter 5.1 --- Results --- p.37 / Chapter 5.2 --- Discussion --- p.55 / Chapter CHAPTER SIX --- CONCLUSION AND SUGGESTIONS OF FURTHER WORK --- p.58 / Chapter 6.1 --- Conclusion --- p.58 / Chapter 6.2 --- Suggestions of further work --- p.59 / APPENDIX A --- p.60 / APPENDIX B / SPREADING RESISTIVITY PROFILES --- p.62 / REFERENCE --- p.93