In diesem Report wird eine Niederenergie-Implantationskammer (NEI-Kammer) beschrieben, die im Forschungszentrum Rossendorf entwickelt und aufgebaut wurde. Die Kammer ermöglicht es, die Implantation von Ionen bei niedrigen Energien (< 30 keV) mit einer Implantationsanlage für mittlere Energien durchzuführen. In der Kammer werden der Ionenstrahl, den der Implanter liefert, auf die erwünschte niedrige Energie abgebremst. Dazu wird ein elektrostatisches Bremslinsensystem eingesetzt, das auf einem neuartigen Prinzip basiert. Das System besteht aus einer Sammellinse und einer Zerstreuungslinse, wobei die Öffnungsfehler beider Linsen entgegengesetzte Vorzeichen besitzen und sich gegenseitig kompensieren. Dadurch ist es möglich, Wafer gebräuchlicher Größe bei geringer Energie mit hoher Dosishomogenität zu implantieren. Die NEI-Kammer ist insbesondere für Forschungseinrichtungen eine vorteilhafte Lösung, da sie eine wesentlich kostengünstigere und flexiblere Alternative zur Anschaffung einer Niederenergie-Implantationsanlage darstellt.

Image charge detection is a non-perturbative pre-detection approach for deterministic ion implantation. Using low energy ion bunches as a model system for highly charged single ions, we experimentally studied the error and detection rates of an image charge detector setup. The probability density functions of the signal amplitudes in the Fourier spectrum can be modelled with a generalised gamma distribution to predict error and detection rates. It is shown that the false positive error rate can be minimised at the cost of detection rate, but this does not impair the fidelity of a deterministic implantation process. Independent of the ion species, at a signal to-noise ratio of 2, a false positive error rate of 0.1% is achieved, while the detection rate is about 22%

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 1978 / Vita. / Includes bibliographical references. / Ph. D. / Ph. D. Massachusetts Institute of Technology, Department of Materials Science and Engineering

Cette recherche vise à élucider les facteurs influençant l’implantation terminologique d’un terme en proposant une nouvelle typologie des facteurs et une méthode qui révèle les mécanismes entraînant la variation terminologique en français dans le domaine des TIC à travers une analyse dans quatre communautés francophones, la France, le Québec, la Belgique et la Suisse. Après avoir établi une nouvelle typologie qui englobe quatre facteurs terminologiques, socioterminologiques, psychoterminologiques et extraterminologiques, nous proposons un modèle hypothétique, en introduisant trois concepts statistiques, les variables dépendante, indépendante et modératrice pour élucider la relation entretenue par ces quatre facteurs. La vérification du modèle est effectuée en deux étapes. Pour l’analyse des facteurs terminologiques et socioterminologiques, nous examinons la relation entre chacun d’eux et l’implantation terminologique. Pour ce faire, les termes ont tout d’abord été codifiés selon un critère établi et une analyse de corrélation a ensuite été effectuée. L’analyse des facteurs psychoterminologiques et extraterminologiques consiste, quant à elle, à examiner les réponses de notre questionnaire par des tests statistiques montrant la différence significative des réponses entre les communautés linguistiques. Cette analyse nous permet de confirmer une différence significative entre les trois pays européens et le Québec dans le mécanisme des facteurs d’implantation terminologique et de conclure que les facteurs psychoterminologiques et extraterminologiques jouent un rôle décisif dans cette différence diatopique. / Our research aims to elucidate the factors that influence the terminological implantation of a term by proposing a new typology of those factors with a method revealing how their mechanism causes terminological variation in French-language ICT. We accomplish this through an analysis of four Francophone communities: France, Quebec, Belgium, and Switzerland. After establishing a new typology, which encompasses the terminological, socio-terminological, psycho-terminological, and extra-terminological factors, we propose a hypothetical model of their mechanism by introducing three statistical concepts—dependent, independent, and moderator variables—to elucidate these factors’ relationships. We verify our model in two steps. First, for the analysis of terminological and socio- terminological factors, we examine the relations between each factor and terminological implantation of 256 French ICT terms. For this, we begin by coding the terms according to a criterion established for each factor. We then carry out a correlation analysis with Spearman’s rank correlation. Second, we analyse the psycho-terminological and extra-terminological factors with statistical tests on the answers to our questionnaire, which show significant differences between these four linguistic communities. Our analysis confirms a significant difference between the three European countries and Quebec in the mechanism of the terminological implantation factors and we conclude that the psycho-terminological and extra-terminological factors play a decisive role in this difference, which we identify as diatopic.

The radioactive ion implantation wear measuring method (RII) has been used for many years as a tool to make highly sensitive real-time in-situ measurements of wear and corrosion in metallic or ceramic materials. The method consists of the controlled implantation of radioactive ions of limited decay time in a thin layer at the surface of the material. The progressive abrasion of the material results in a decline in radioactivity which is followed to monitor material losses. The application of RII to control the wear of polymers is potentially of interest, but it has been lagging behind because of uncertainties related to possible changes in material properties during and after the implantation, and to the exact shape of implantation profiles. In this thesis, we investigate these issues on two thermoplastic elastomers typically used for making the soles of sport shoes, among which one contains radiation-sensitive unsaturated bonds, using as ions 7Be, 7Li and Kr. The results of the sample characterisation indicate that the 7Be and 7Li implantations, under properly-selected conditions, do not induce significant modifications in the materials. The implantation of a stack of polymer thin films and the activity measurements performed to determine the implantation profile are also presented. The experimental results on the ion implantation profiles and the determination of calibration curves are presented and discussed in comparison with simulated results. The results indicate that it is possible to predict the implantation profile by means of simulations. This bodes well for the application of the RII method to polymer materials. In the last part, an experimental study is presented regarding the possible redistribution of the implanted 7Be after implantation. Since very few existing experimental techniques are able to detect light elements implanted in polymer targets at fluences less or equal to 1012 cm-2, with implantation depths of a few µm, a new method is presented, which implies the use of plasma etching techniques in order to remove layers of polymers and measuring the remaining activity after each step. Our results indicate that a redistribution of the implanted ions takes place during the implantation process, resulting in a scrambling of the initial implantation profile. Nevertheless, provided a suitable methodology be used, wear measurements in polymers by using the RII method are still possible, as we propose in the thesis.

The aim of this work is to analytically treat the dynamic ion behavior during the evolution of the ion matrix sheath, considering the industrial application plasma source ion implantation for both planar and cylindrical targets, and then to de-velop a code that simulates this dynamic ion behavior numerically. If the sepa-ration between the electrodes in a discharge tube is small, upon the application of a large potential between the electrodes, an ion matrix sheath is formed, which fills the whole inter-electrode space. After a short time, the ion matrix sheath starts moving towards the cathode and disappears there. Two regions are formed as the matrix sheath evolves. The potential profiles of these two regions are derived and the ion flux on the cathode is estimated. Then, by us-ing the finite-differences method, the problem is simulated numerically. It has been seen that the results of both analytical calculations and numerical simula-tions are in a good agreement.

Le procédé Smart CutTM, utilisé pour le transfert de films minces sur substrat est basé sur la fissuration du silicium. La propagation des fissures est initiée à partir de défauts bidimensionnels induits par implantation d'hydrogène, les « H-platelets ». Des études précédentes ont montré que la fissuration du Si peut également être obtenue à partir de défauts nommés « He-plates » qui ont la particularité d'avoir un diamètre dix fois supérieur. L'objectif de ce travail était d'étudier la formation de ces défauts et leur évolution sous flux d'hydrogène jusqu'à la propagation des fissures. Dans une première partie, la formation des « He-plates » a été étudiée pour différentes orientations de substrats et discutée par rapport à la contrainte compressive bi-axiale induite par l'implantation. Les résultats montrent que les mécanismes qui gouvernent la formation des « He-plates » sont les mêmes que pour les « H-platelets ». Dans une seconde partie, l'évolution des « He-plates » en présence d'H a été étudiée en utilisant une approche expérimentale originale qui couple implantations d'hydrogène et observations par microscopie électronique en transmission. Les expériences montrent que la croissance des « He-plates » est gouvernée par la diffusion de l'hydrogène qui dépend de la température et du taux d'endommagement. Enfin, leur croissance est décrite à l'aide d'un modèle cinétique et, leur coalescence a été analysée en relation avec un modèle élastique. La propagation rectiligne de fissures à partir de ces précurseurs offre des perspectives intéressantes pour une utilisation industrielle. / The Smart CutTM process, used in the transfer of thin films on substrates is based on the cracking of silicon. The crack propagation is initiated from bi-dimensional defects induced by H-implantation, the H-platelets. Previous studies showed that the propagation of cracks in Si can also be triggered from defects named He-plates which have the particular feature of having a diameter ten times larger. The aim of this work was to study the formation of these defects and their evolution until the crack propagation under H supply.In a first part, the formation of He-plates was studied for different substrate orientations and discussed regarding the bi-axial compressive stress induced by implantation. Results show that the mechanisms that govern the He-plate formation are the same than for H-platelet formation. In a second part, the evolution of He-plates under H supply was studied by using an original experimental approach that combines H-implantation and transmission electron microscopy observations. Experiments show that the growth of He-plates is controlled by the diffusion of hydrogen which depends on temperature and damage rate. Finally, the growth is described by a kinetic model and their coalescence was analyzed with regard to an elastic model. The straight propagation of cracks from He-plates offers promising outlook for an industrial use.

In the last years, there is a rise of interest in investigation and fabrication of nanometer sized magnetic structures due to their various applications (e.g. for data storage or micro sensors). Over the last several decades ion beam implantation became an important tool for the modification of materials and in particular for the manipulation of magnetic properties. Nanopatterning and implantation can be done simultaneously using focused-ion beam (FIB) techniques. FIB implantation and standard ion implantation differ in their beam current densities by 7 orders of magnitude. This difference can strongly influence the structural and magnetic properties, e.g. due to a rise of the local temperature in the sample during ion implantation. In previous investigations both types of implantation techniques were studied separately. The aim of the current research was to compare both implantation techniques in terms of structural changes and changes in magnetic properties using the same material system. Moreover, to separate any possible annealing effects from implantation ones, the influence of temperature on the structural and magnetic properties were additionally investigated. For the current study a model material system which is widely used for industrial applications was chosen: a 50 nm thick non-ordered nano-crystalline permalloy (Ni81Fe19) film grown on a SiO2 buffer layer based onto a (100)-oriented Si substrate. The permalloy films were implanted with a 30 keV Ga+ ion beam; and also a series of as-deposited permalloy films were annealed in an ultra-high vacuum (UHV) chamber. Several investigation techniques were applied to study the film structure and composition, and were mostly based on non-destructive X-ray investigation techniques, which are the primary focus of this work. Besides X-ray diffraction (XRD), providing the long-range order crystal structural information, extended X-ray absorption fine structure (EXAFS) measurements to probe the local structure were performed. Moreover, the film thickness, surface roughness, and interface roughness were obtained from the X-ray reflectivity (XRR) measurements. Additionally cross-sectional transmission electron microscope (XTEM) imaging was used for local structural characterizations. The Ga depth distribution of the samples implanted with a standard ion implanter was measured by the use of Auger electron spectroscopy (AES) and Rutherford backscattering (RBS), and was compared with theoretical TRIDYN calculation. The magnetic properties were characterized via polar magneto-optic Kerr effect (MOKE) measurements at room temperature. It was shown that both implantation techniques lead to a further material crystallization of the partially amorphous permalloy material (i.e. to an increase of the amount of the crystalline material), to a crystallite growth and to a material texturing towards the (111) direction. For low ion fluences a strong increase of the amount of the crystalline material was observed, while for high ion fluences this rise is much weaker. At low ion fluences XTEM images show small isolated crystallites, while for high ones the crystallites start to grow through the entire film. The EXAFS analysis shows that both Ni and Ga atom surroundings have a perfect near-order coordination corresponding to an fcc symmetry. The lattice parameter for both implantation techniques increases with increasing ion fluence according to the same linear law. The lattice parameters obtained from the EXAFS measurements for both implantation types are in a good agreement with the results obtained from the XRD measurements. Grazing incidence XRD (GIXRD) measurements of the samples implanted with a standard ion implanter show an increasing value of microstrain with increasing ion fluence (i.e. the lattice parameter variation is increasing with fluence). Both types of implantation result in an increase of the surface and the interface roughness and demonstrate a decrease of the saturation polarization with increasing ion fluence. From the obtained results it follows that FIB and standard ion implantation influence structure and magnetic properties in a similar way: both lead to a material crystallization, crystallite growth, texturing and decrease of the saturation polarization with increasing ion fluence. A further crystallization of the highly defective nano-crystalline material can be simply understood as a result of exchange processes induced by the energy transferred to the system during the ion implantation. The decrease of the saturation polarization of the implanted samples is mainly attributed to the simple presence of the Ga atoms on the lattice sites of the permalloy film itself. For the annealed samples more complex results were found. The corresponding results can be separated into two temperature regimes: into low (≤400°C) and high (>400°C) temperatures. Similar to the implanted samples, annealing results in a material crystallization with large crystallites growing through the entire film and in a material texturing towards the (111) direction. The EXAFS analysis shows a perfect near-order coordination corresponding to an fcc symmetry. The lattice parameter of the annealed samples slightly decreases at low annealing temperatures, reaches its minimum at about ~400°C and slightly rises at higher ones. From the GIXRD measurements it can be observed that the permalloy material at temperatures above >400°C reaches its strain-free state. On the other hand, the film roughness increases with increasing annealing temperature and a de-wetting of the film is observed at high annealing temperatures. Regardless of the material crystallization and texturing, the samples annealed at low temperatures demonstrate no change in saturation polarization, while at high temperatures a rise by approximately ~15% at 800°C was observed. The rise of the saturation polarization at high annealing temperatures is attributed to the de-wetting effect.

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