Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Doolittle, W. Alan; Committee Member: Ferguson, Ian; Committee Member: Graham, Samuel; Committee Member: Rohatgi, Ajeet; Committee Member: Shen, Shyh-Chiang.

Thesis (M.S.)--Rochester Institute of Technology, 2006. / Typescript. Includes bibliographical references (leaves 70-72).

Please read the abstract in the section front of this document. / Dissertation (MSc (Physics))--University of Pretoria, 2006. / Physics / unrestricted

The optical properties of InAs/GaSb heterostructures under applied magnetic fields are studied in experimental and theoretical detail. The InAs/GaSb system is a type-II "crossed-gap" system, where the valence band edge of GaSb lies higher in energy than the conduction band edge of InAs. This leads to a region of energy above the InAs conduction band where conduction and hole states mix. Thin-layer superlattices remain semiconducting due to confinement effects, but thick-layer superlattices experience charge transfer which leads to intrinsic carrier densities approaching 10¹² cm^-2 per layer. Existing multi-band modeling techniques based on the <strong>k·p</strong> formalism are discussed, and a method of solving superlattice band structure (the "momentum-matrix" technique) is presented. The quantizing effects of the superlattice layers and applied magnetic fields are investigated, and the selection rules for optical transitions are derived. Standard cyclotron resonance (CR) is used to study effective masses in InAs/GaSb structures. The heavy hole mass is found to be strongly orientation-dependent, with a mass in the [111] orientation reduced 25% from the [001] mass. The electron mass is found to be roughly isotropic with respect to growth orientation, but shows variation with the InAs width due to quantum confinement effects. CR of InAs/GaSb heterojunctions display hitherto unexplained oscillations in linewidth, intensity, and effective mass. A model is proposed which explains the oscillations, based on the intrinsic nature of the InAs/GaSb system. CR is performed on an InAs/GaSb heterojunction using a free-electron laser, where due to the high intensities (on the order of MW/cm²) the absorption process saturates. This saturation allows for a determination of non-radiative relaxation lifetimes, and through the energy dependence of these lifetimes the magnetophonon effect is observed, allowing a direct measurement of LO-phonon-assisted energy relaxation rates. Coupling is introduced into the standard CR experiment, either by tilting the sample with respect to the magnetic field, or by applying a metal grating to the surface. These coupled CR experiments have striking qualitative results which allow for determination of subband separation energies and coupling matrix elements. Photoconductivity experiments are performed on thin-layer (semiconducting) superlattices, showing optical response at far-infrared wavelengths (5-20 μm). The results are compared with <strong>k·p</strong> calculations. One sample is processed for vertical transport, in which conduction occurs perpendicular to the superlattice layers. Strong optical response from this sample indicates the viability of InAs/GaSb-based far-infrared detectors. The momentum-matrix technique is used to predict optimum parameters for semiconducting superlattices with band gaps in the far-infrared. Semimetallic structures are studied via a multi-band self-consistent model, with results corroborating with and extending previous work. Intrinsic structures under applied magnetic field are modeled theoretically for the first time.

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A logical progression from the maturing field of colloidal semiconductor quantum dots to the emerging subclass of impurity-doped colloidal semiconductor nanoparticles is underway. To this end, the present work describes the formation and analysis of a new form of Tin-doped Indium Oxide (ITO). The form is that of a colloidal dispersion comprised of pure-phase, 4-6 nanometer ITO particles possessing an essentially single crystalline character. This system forms a non-agglomerated, optically clear solution in a variety of non-polar solvents and can remain in this state, at room temperature, for months and potentially, years. ITO is the most widely used member of the exotic materials family known as Transparent Conductive Oxides (TCOs) and is the primary enabling material behind a wide variety of opto-electronic device technologies. Material synthesis was achieved by initiating a series of interrelated nucleophilic substitution reactions that provided sufficient intensity to promote doping efficiencies greater than 90% for a wide range of tin concentrations. The optical clarity of this colloidal system allowed the intrinsic properties of single crystalline ITO particles to be evaluated prior to their use in thin-films or composite structures. Monitoring the temporal progression of n-type degeneracy by its effects on the optical properties of colloidal dispersions shed light on the fundamental issues of particle formation, band filling (Burstein-Moss) dynamics, and the very origin of n-type degeneracy in ITO. Central to these studies was the issue of excess electron character. The two limiting cases of entirely free and entirely confined electron motion were evaluated by application of bulk-like band dispersion analysis and the effective mass approximation, respectively. This provided a means to estimate the number of excess conduction band electrons present within an individual particle boundary. The ability to control and optimize the level of n-type degeneracy within the colloidal ITO nanoparticle form by compositional variation was also demonstrated. A key to the widespread adoption of a new material by industry is an ability to produce multi-gram and perhaps, kilogram quantities with no significant sacrifice in quality. Accordingly, a modified synthesis process was developed to allow for the mass production of high-quality colloidal ITO nanocrystals.

Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008. / Committee Chair: Honsberg, Christiana; Committee Co-Chair: Ferguson, Ian; Committee Member: Citrin, David; Committee Member: Klein, Benjamin; Committee Member: Rohatgi, Ajeet; Committee Member: Snyder, Robert. Part of the SMARTech Electronic Thesis and Dissertation Collection.

Gravure printing is a conventional printing process used for printing graphics on products ranging from magazines and packaging to wallpaper and floor coverings. It is a versatile process that can be used to deposit a variety of fluid materials onto many different surfaces. It is also capable of very high speed deposition, with speeds up to 60 m/min being reported. Because of its versatility and high throughput capability, gravure is an attractive platform for the manufacture of devices composed of relatively thin layers of functional, electronic materials deposited onto flexible substrates. In many cases, these materials can be deposited in liquid form, in which case gravure printing can potentially be used. One such material that is commonly used is Indium Tin Oxide (ITO), a transparent, conducting ceramic material. It is commonly deposited onto flexible, transparent polyethylene terapthalate (PET) films that can be used in flexible displays, solar cells, and other devices requiring a transparent, conducting layer. This thesis examines the effect of key process parameters on the physical and functional characteristics of a printed ITO nanoparticle layer. ITO layers were successfully printed that were between 300 and 1300 nm thick, with roughness Ra generally less than a few hundred nm. The sheet resistance values were relatively high, in the hundreds of kohms/square. The transparency was relatively low, although the films were generally transparent. Several parameters were found to be significant in affecting the several different physical and performance measures, specifically solvent and ITO content, as well as cell geometry.