Main objective of the present work is to develop wide-band gap InGaN solar cells in the 2.4 - 2.9 eV range that can be an integral component of photovoltaic devices to achieve efficiencies greater than 50%. In the present work, various challenges in the novel III-nitride technology are identified and overcome individually to build basic design blocks, and later, optimized comprehensively to develop high-performance InGaN solar cells. Due to the unavailability of a suitable modeling program for InGaN solar cells, PC1D is modified up to a source-code level to incorporate spontaneous and piezoelectric polarization in order to accurately model III-nitride solar cells. On the technological front, InGaN with indium compositions up to 30% (2.5 eV band gap) are developed for photovoltaic applications by controlling defects and phase separation using metal-organic chemical vapor deposition. InGaN with band gap of 2.5 eV is also successfully doped to achieve acceptor carrier concentration of 1e18 cm-3. A robust fabrication scheme for III-nitride solar cells is established to increase reliability and yield; various schemes including interdigitated grid contact and current spreading contacts are developed to yield low-resistance Ohmic contacts for InGaN solar cells. Preliminary solar cells are developed using a standard design to optimize the InGaN material, where the band gap of InGaN is progressively lowered. Subsequent generations of solar cell designs involve an evolutionary approach to enhance the open-circuit voltage and internal quantum efficiency of the solar cell. The suitability of p-type InGaN with band gaps as low as 2.5 eV is established by incorporating in a solar cell and measuring an open-circuit voltage of 2.1 V. Second generation InGaN solar cell design involving a 2.9 eV InGaN p-n junction sandwiched between p- and n-GaN layers yields internal quantum efficiencies as high as 50%; while sixth generation devices utilizing the novel n-GaN strained window-layer enhance the open circuit voltage of a 2.9 eV InGaN solar cell to 2 V. Finally, key aspects to further InGaN solar cell research, including integration of various designs, are recommended to improve the efficiency of InGaN solar cells. These results establish the potential of III-nitrides in ultra-high efficiency photovoltaics.

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This research was designed to fabricate and characterize novel polyhedral phase segregated microstructures of polystyrene (PS)-matrix composites filled with multi-walled carbon nanotubes (MWNT) and indium tin oxide (ITO) nanopowders. PS-composites were compression molded with MWNT and ITO separately first. The resulting composites were conducting, and remained optically transparent. Mixtures of MWNT and ITO were then used to form mixed ITO/MWNT PS-composites in order to optimize their transparency and conductivity. This was achieved by fabricating composites with varying concentrations of fillers. Impedance spectroscopy was used to characterize the electrical properties of the PS-composites. Optical properties were characterized by measuring the transmission of light through the PS-composite in the visible light spectrum using a spectrophotometer. The electrical properties and microstructural attributes of the fillers used were also characterized. The main objective of the project was to understand the relationships between the structural, electrical, and optical properties of the PS-composites. The resistivity of PS-composites filled with MWNT ranged from 105 to 1013 Ω cm for samples with 0.007 to 0.9 vol% MWNT. The resistivity of PS-composites filled with ITO ranged from 107 to 1013 Ω cm for PS-composites with 0.034 to 0.86 vol% ITO. PS/ITO composites had a percolation threshold of 0.15, 0.25, or 0.3 phr ITO, depending on the type of ITO used in the composite. The percolation threshold of PS/MWNT composites was found to be 0.01 phr MWNT. Mixed ITO/MWNT PS-composites were already percolated, the concentrations investigated in xv ii this study were already above the percolation threshold of these composites. A time dependence on impedance was found for PS-composites filled with MWNT. As time increases there is a decrease in impedance, and in some cases also a dependence on voltage. All PS-composites showed a dependence on the microstructure of the PS matrix and the filler material. The resistivity and percolation threshold were lower for PS/MWNT composites than PS/ITO composites due to the difference in filler size and aspect ratio, since MWNT have a smaller size. The orientation of PS grains with respect to neighboring grains was found to affect the resistivity of PS/MWNT. PS/MWNT composites with preferentially oriented PS grains were found to have a lower resistivity. Mixed ITO/MWNT PS-composites with the right filler concentrations were able to maintain transmission while decreasing resistivity. The fracture surface of fractured PS-composites prepared in this work indicated that there was bonding between adjacent PS-grains. From this work, it can be concluded that large grain hybrid ITO/MWNT PS-composites provide insight into the effect of combining nanometer sized filler materials together in a polymer matrix on the resultant structural, electrical, and optical properties of the composite. In the future, it is recommended that this study be used to aid research in flexible transparent conducting electrodes using a polymer matrix and hybrid/mixed nanometer sized conducting fillers.

Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO-based TFTs processed at temperatures between 200 °C and 300 °C. TFTs tested exhibit an almost rigid shift in log₁₀(I[subscript D]) – V[subscript GS] transfer curves in which the turn-on voltage, V[subscript ON], moves to a more positive gate voltage with increasing stress time during constant-voltage bias-stress testing of IGZO TFTs. TFT stability is improved as the post-deposition annealing temperature increases over the temperature range of 200 – 300 ºC. The turn-on voltage shift induced by constant-voltage bias-stressing is at least partially reversible; V[subscript ON] tends to recover towards its initial value of V[subscript ON] if the TFT is left unbiased in the dark for a prolonged period of time and better recovery is observed for a longer recovery period. V[subscript ON] for a TFT can be set equal to zero after bias-stress testing if the TFT electrodes are grounded and the TFT is maintained in the dark for a prolonged period of time. Attempts to accelerate the recovery process by application of a negative gate bias at elevated temperature (i.e., 100 ºC) were unsuccessful, resulting in severely degraded subthreshold swing. An almost rigid log₁₀(I[subscript D]) – V[subscript GS] transfer curve shift to a lower (more negative) V[subscript ON] with increasing temperature is observed in the range of –50 °C to +50 °C, except for a TFT with an initial V[subscript ON] equal to zero, in which case the log₁₀(ID) – V[subscript GS] transfer curve is temperature-independent. A more detailed temperature-dependence assessment, however, indicates that the log₁₀(I[subscript D]) – V[subscript GS] transfer curve shift is not exactly rigid since the mobility is found to increase slightly with increasing temperature. A noticeable anomaly is observed in certain log₁₀(I[subscript D]) – VGS transfer curves, especially when obtained at elevated temperature (e.g., 30 and 50 ºC), in which I[subscript D] decreases precipitously near zero volts in the positive gate voltage sweep. This anomaly is attributed to a gate-voltage-step-involved detrapping and subsequent retrapping of electrons in the accumulation channel and/or channel/gate insulator interface. In fact, all IGZO TFT stability and temperature-dependence trends are attributed to channel interface and/or channel bulk trapping/detrapping. / Graduation date: 2009

Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs, significantly improving the NBIS stability. NBIS instabilities in unpassivated TFTs are attributed to an NBIS-induced desorption of chemisorbed oxygen from the channel layer top surface, exposing surface oxygen vacancies. A ZTSO layer protects the channel layer top surface from adsorbed gas interactions and also appears to reduce the density of oxygen vacancies. The best device architectures investigated with respect to TFT electrical performance are found to be staggered with aluminum electrodes for unpassivated TFTs and coplanar with ITO electrodes for ZTSO-passivated TFTs. Annealing in wet-O₂ is not found to be effective for improving the performance of IGZO or ZTO TFTs or for reducing the post-deposition annealing temperature. / Graduation date: 2012