The magnetophonon effect was used to investigate the uniaxial stress dependence of the effective mass in n-type InSb (indium antimonide).

The origin of the Shubnikov-de Haas effect, the strain theory developed by Bir and Pikus, and a simple, classical beating-effects model are discussed. The equipment and the experimental techniques used in recording the Shubnikov-de Haas oscillations of n-type indium antimonite are described. The analysis of the experimental data showed that the angular anisotropy of the period of SdH oscillations at zero stress was unmeasurable for low concentration samples as discussed by other workers. Thus the Fermi surfaces of InSb are nearly spherical at low concentration. It was also shown that the Fermi surface of a high concentration sample of InAs is also nearly spherical. The advantages of using the magnetic field modulation and phase sensitive detection techniques in determining the beats are given. The simple, classical beating-effects model is able to explain the experimental beating effect data in InSb. The computer programs used to obtain the theoretical values of the beat nodal position, SdH frequencies, average frequency, the Fermi surface contours, and the energy eigenvalues are given.

abstract: Nanowires are 1D rod-like structures which are regarded as the basis for future technologies. III-V nanowires have attracted immense attention because of their stability, crystal quality and wide use. In this work, I focus on the growth and characterization of III-V semiconductor nanowires, in particular GaP, InP and InGaP alloys. These nanowires were grown using a hot wall CVD(Chemical Vapor Deposition) setup and are characterized using SEM (Scanning Electron Microscope), EDX (Energy Dispersive X-ray Spectroscopy) and PL (Photoluminescence) techniques. In the first chapter, Indium Phosphide nanowires were grown using elemental sources (In and P powders). I consider the various kinds of InP morphologies grown using this method. The effect of source temperature on the stoichiometry and optical properties of nanowires is studied. Lasing behavior has been seen in InP nanostructures, showing superior material quality of InP. InGaP alloy nanowires were grown using compound and elemental sources. Nanowires grown using compound sources have significant oxide incorporation and showed kinky morphology. Nanowires grown using elemental sources had no oxide and showed better optical quality. Also, these samples showed a tunable alloy composition across the entire substrate covering more than 50% of the InGaP alloy system. Integrated intensity showed that the bandgap of the nanowires changed from indirect to direct bandgap with increasing Indium composition. InGaP alloy nanowires were compared with Gallium Phosphide nanowires in terms of PL emission, using InGaP nanowires it is possible to grow nanowires free of defects and oxygen impurities, which are commonly encountered in GaP nanowires. / Dissertation/Thesis / Masters Thesis Electrical Engineering 2016

Please read the abstract in the section front of this document. / Dissertation (MSc (Physics))--University of Pretoria, 2006. / Physics / unrestricted

京都大学 / 新制・課程博士 / 博士(工学) / 甲第23867号 / 工博第4954号 / 新制||工||1774(附属図書館) / 京都大学大学院工学研究科都市環境工学専攻 / (主査)教授 清水 芳久, 教授 米田 稔, 准教授 松田 知成 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

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by Won Hon Kit. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1997. / Includes bibliographical references (leaves 66-70). / by Won Hon Kit. / Acknowledgment --- p.i / Abstract --- p.ii / Chapter Chapter1 --- Introduction --- p.1 / Chapter 1.1 --- Uniqueness of ZnxCd/1-x Se --- p.1 / Chapter 1.2 --- The Choice of OMVPE --- p.1 / Chapter 1.3 --- Epilayer Relaxation in Heteroepitaxy --- p.2 / Chapter 1.4 --- The Most Suitable Substrate --- p.4 / Chapter Chapter2 --- Experimental Procedures --- p.6 / Chapter 2.1 --- Degreasing and Etching --- p.6 / Chapter 2.2 --- Preheating --- p.6 / Chapter 2.3 --- OMVPE Growth --- p.6 / Chapter Chapter3 --- Characterization --- p.9 / Chapter 3.1 --- X-ray Diffraction --- p.9 / Chapter 3.2 --- EDX Spectroscopy --- p.13 / Chapter 3.3 --- Optical Reflectance --- p.15 / Chapter Chapter4 --- Data Analysis --- p.20 / Chapter 4.1 --- Control of Composition --- p.20 / Chapter 4.2 --- Structural Quality and Epilayer Relaxation --- p.22 / Chapter 4.3 --- Critical Point Energies --- p.24 / Chapter 4.4 --- Refractive Index and Extinction coefficient --- p.26 / Chapter Chapter5 --- Conclusions --- p.28 / List of Figures --- p.30 / Reference --- p.66