Orientador: Edison Zacarias da Silva / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-21T01:33:25Z (GMT). No. of bitstreams: 1 Faccin_GiovaniManzeppi_D.pdf: 8582909 bytes, checksum: f53f27084aaa92a73ab76984290715ff (MD5) Previous issue date: 2012 / Resumo: Esta tese apresenta um estudo baseado em simulação computacional de propriedades físicas de nanopartículas de ferro, cobalto, ítrio e compostos híbridos destes elementos visando mapear as estruturas mais estáveis destas nanopartículas e seu comportamento magnético. Para este fim, empregamos cálculos de primeiros princípios baseados no formalismo da teoria do funcional da densidade aliados a uma estratégia heurística visando mapear possíveis isômeros de cada nanopartícula e, posteriormente, caracterizar suas propriedades magnéticas. Os principais resultados encontrados são o mapa estrutural dos isômeros mais prováveis e seu o mapa de magnetização, os quais podem servir de guia para a síntese direcionada de novos materiais com propriedades físicas e químicas de interesse / Abstract: This thesis presents a computational study regarding physical properties of iron, cobalt and yttrium nanoparticles as well as hybrid composites of these elements aiming to map their most stable structures and their magnetic behavior. To this end, we have used first principles calculations based on the density functional theory formalism coupled with a heuristic strategy aiming to map possible isomers of each nanoparticle and also characterize their magnetic properties. The main results found are a map of the structures of the most likely isomers and also their magnetization map, which can be used as a guide for the directed synthesis of new materials that have physical and chemical properties of interest / Doutorado / Física / Doutor em Ciências

Notre travail de recherche concerne l’étude théorique de la structure électronique des molécules diatomiques telles que les mono-halogénures d’Aluminium AlX(X=Br,I) et les mono-halogénures de Lutécium LuX(X=F,Cl). Les méthodes ab-initio sont utilisées pour réaliser notre étude. Il s’agit des méthodes Hartree-Fock SCF, CASSCF (Complete Active-Space Self-Consistent Field) et les méthodes d’interaction de configuration multi-référence MRCI avec et sans la correction de Davidson. Ces calculs sont effectués à l’aide du progiciel en chimie quantique MOLPRO, en bénéficiant de l’usage de l’interface graphique GABEDIT. Nos résultats ont regroupé les courbes d’énergie potentielle CEPs, les constantes spectroscopiques, y compris la fréquence harmonique ωe (cm-1), la distance internucléaire à l’équilibre Re (Å) et la valeur énergétique Te(cm-1) pour un ensemble des états électroniques singulets et triplets de représentation 2s+1Λ(+/-) (L’effet de spin-orbite est négligeable) pour ces quatre molécules. Par comparaison entre nos résultats obtenus et ceux apportés de la littérature, on a trouvé un bon accord avec un faible pourcentage d’erreur ne dépassent pas le 3% par rapport à la valeur expérimentale considérée comme valeur exacte / Our research concerns the theoretical study of the electronic structure of diatomic molecules such as Aluminum mono-halides AlX (X = Br,I) and Lutetium mono-halides LuX (X = F, Cl). The ab-initio methods are used for our study. These methods SCF, CASSCF (Complete Active-Space Self-Consistent Field) and interaction of configuration multi-reference MRCI with and without Davidson correction. These calculations are performed using the quantum chemistry software package MOLPRO, benefiting from the use of graphic interface GABEDIT. Our findings have consolidated the potential energy curves PECs, spectroscopic constants, including harmonic frequency ωe(cm-1), the internuclear distance at equilibrium Re(Å) and energy Te(cm-1) for a set of singlet and triplet electronic states in the representation 2s +1 Λ (+/-) (neglecting spin-orbit effects) for these four molecules. By comparison between our results and those contributed to the literature, we found a good agreement with a low percentage of error does not exceed 3% from the experimental value was considered as exact

Neste trabalho estudamos as propriedades físicas das impurezas de elementos de terra rara (TR) nos cristais de GaN, nas estruturas cristalinas zincblenda e wurtzita, e de ZnO. Para tal, consideramos as impurezas de Eu, Gd, Tb, Dy, Ho, Er e Tm substitucionais no sítio do cátion (Ga ou Zn), pois esta posição é mais estável do que no sítio do ânion (N ou O). As investigações foram efetuadas através de simulações computacionais baseadas em métodos de primeiros princípios dentro do formalismo da teoria do funcional da densidade e utilizando o método FP-LAPW (Full Potential Linear Augmented Plane Waves), implementado no código computacional WIEN2k, dentro do esquema de supercélula, com relaxações atômicas tratadas de modo apropriado. No tratamento dos estados de valência 3d (Ga ou Zn) e 4f dos átomos de TR foi introduzida uma correção local de Hubbard, para levar em conta efeitos de alta correlação eletrônica. Inicialmente, estudamos as propriedades eletrônicas e estruturais dos elementos de TR em suas fases metálicas. Estes resultados serviram para validar a metodologia de obtenção dos valores dos parâmetros U de Hubbard de modo autoconsistente, pois para este grupo de materiais existem resultados experimentais. Comparando a localização e o desdobramento entre os estados ocupados e desocupados relacionados aos orbitais 4f, em relação ao nível de Fermi dos sistemas, obteve-se uma ótima concordância. Nossos resultados para os sistemas dopados, utilizando a correção do potencial U de Hubbard, mostram que a suas descrições estão adequadas. Somente com a introdução da correção é possível localizar corretamente, em relação ao topo da banda de valência, os estados ocupados e desocupados relacionados aos orbitais 4f. Estes resultados estão de acordo com esquemas propostos na literatura, mostrando que o estado de oxidação das impurezas de TR é trivalente e que, em geral, em ambos sistemas cristalinos, não há a introdução de níveis de energia na região do gap dos materiais. Nosso estudo da correção do potencial U de Hubbard, obtido autoconsistemente, na teoria do funcional da densidade, mostra que seus valores não são universais, dependendo do estado de carga e do ambiente em que o átomo está inserido. Mais ainda, mostra que o procedimento adotado é totalmente apropriado para descrever a correlação eletrônica dos elétrons 4f. / In this work we studied the physical properties of rare earth (RE) impurities in GaN, in the zincblend and the wurtzite crystal structures, and in ZnO. Eu, Gd, Tb, Dy, Ho, Er and Tm substitutional impurities in the cation site (Ga or Zn) were considered, since this position is more stable than anion site (N or O). The investigations were carried out by computational simulations using ab initio methods, based on the density functional theory and the FP-LAPW (Full Potential Linear Augmented Plane Waves) method, as implemented in the WIEN2k code, considering the supercell approach and atomic relaxations. The 3d-Ga or 3d-Zn and the 4f-RE valence states were treated with the introduction of on-site Hubbard correction, in order to correctly describe the strongly correlated electrons. First, the electronic and structural properties of RE metallic systems were investigated and the results were compared with available experimental data, showing a good agreement. Those results helped to identify the appropriate procedure to compute the Hubbard U potential. This procedure should also provide a reliable description about the electronic properties of RE elements as impurities in semiconductors. Then, we have computed the properties of substitutional RE impurities in the cation site using the same methodology and procedures. The Hubbard U potential was necessary to correctly describe the position of the 4f occupied and unoccupied states, related to the valence band top. These results are in agreement with proposed electronic properties of RE doped GaN and ZnO found in the literature. The RE impurities oxidation states are in general trivalent in both crystal systems and introduce no energy levels in the gap region. Our Hubbard U potential correction, obtained in a self-consistent way, depends on the considered element and the neighborhood, and it is not an universal parameter. Moreover, our investigation shows that the adopted procedure is totally appropriate to describe the electronic correlation of the 4f electrons.

Noncovalent interactions are of pivotal importance in many areas of chemistry, biology, and materials science, and the intermolecular interactions involving aromatic rings in particular, are fundamental to molecular organization and recognition processes. The work detailed in this thesis involves the application of state-of-the-art ab initio electronic structure theory methods to elucidate the nature of pi-pi interactions. The binding energies, and geometrical and orientational preferences of the simplest prototype of aromatic pi-pi interactions, the benzene dimer, are explored. We obtain the first converged values of the binding energies using highly accurate methods and large basis sets. Results from this study predict the T-shaped and parallel-displaced configurations of benzene dimer to be nearly isoenergetic. The role of substituents in tuning pi-pi interaction is investigated. By studying dimers of benzene with various monosubstituted benzenes (in the sandwich and two T-shaped configurations), we surprisingly find that all of the substituted sandwich dimers considered bind more strongly than benzene dimer. We also find that these interactions can be tuned by a modest degree of substitution. Energy decomposition analysis using symmetry-adapted perturbation theory (SAPT) reveals that models based solely on electrostatic effects will have difficulty in reliably predicting substituent effects in pi-pi interactions.

Neste trabalho estudamos as propriedades físicas das impurezas de elementos de terra rara (TR) nos cristais de GaN, nas estruturas cristalinas zincblenda e wurtzita, e de ZnO. Para tal, consideramos as impurezas de Eu, Gd, Tb, Dy, Ho, Er e Tm substitucionais no sítio do cátion (Ga ou Zn), pois esta posição é mais estável do que no sítio do ânion (N ou O). As investigações foram efetuadas através de simulações computacionais baseadas em métodos de primeiros princípios dentro do formalismo da teoria do funcional da densidade e utilizando o método FP-LAPW (Full Potential Linear Augmented Plane Waves), implementado no código computacional WIEN2k, dentro do esquema de supercélula, com relaxações atômicas tratadas de modo apropriado. No tratamento dos estados de valência 3d (Ga ou Zn) e 4f dos átomos de TR foi introduzida uma correção local de Hubbard, para levar em conta efeitos de alta correlação eletrônica. Inicialmente, estudamos as propriedades eletrônicas e estruturais dos elementos de TR em suas fases metálicas. Estes resultados serviram para validar a metodologia de obtenção dos valores dos parâmetros U de Hubbard de modo autoconsistente, pois para este grupo de materiais existem resultados experimentais. Comparando a localização e o desdobramento entre os estados ocupados e desocupados relacionados aos orbitais 4f, em relação ao nível de Fermi dos sistemas, obteve-se uma ótima concordância. Nossos resultados para os sistemas dopados, utilizando a correção do potencial U de Hubbard, mostram que a suas descrições estão adequadas. Somente com a introdução da correção é possível localizar corretamente, em relação ao topo da banda de valência, os estados ocupados e desocupados relacionados aos orbitais 4f. Estes resultados estão de acordo com esquemas propostos na literatura, mostrando que o estado de oxidação das impurezas de TR é trivalente e que, em geral, em ambos sistemas cristalinos, não há a introdução de níveis de energia na região do gap dos materiais. Nosso estudo da correção do potencial U de Hubbard, obtido autoconsistemente, na teoria do funcional da densidade, mostra que seus valores não são universais, dependendo do estado de carga e do ambiente em que o átomo está inserido. Mais ainda, mostra que o procedimento adotado é totalmente apropriado para descrever a correlação eletrônica dos elétrons 4f. / In this work we studied the physical properties of rare earth (RE) impurities in GaN, in the zincblend and the wurtzite crystal structures, and in ZnO. Eu, Gd, Tb, Dy, Ho, Er and Tm substitutional impurities in the cation site (Ga or Zn) were considered, since this position is more stable than anion site (N or O). The investigations were carried out by computational simulations using ab initio methods, based on the density functional theory and the FP-LAPW (Full Potential Linear Augmented Plane Waves) method, as implemented in the WIEN2k code, considering the supercell approach and atomic relaxations. The 3d-Ga or 3d-Zn and the 4f-RE valence states were treated with the introduction of on-site Hubbard correction, in order to correctly describe the strongly correlated electrons. First, the electronic and structural properties of RE metallic systems were investigated and the results were compared with available experimental data, showing a good agreement. Those results helped to identify the appropriate procedure to compute the Hubbard U potential. This procedure should also provide a reliable description about the electronic properties of RE elements as impurities in semiconductors. Then, we have computed the properties of substitutional RE impurities in the cation site using the same methodology and procedures. The Hubbard U potential was necessary to correctly describe the position of the 4f occupied and unoccupied states, related to the valence band top. These results are in agreement with proposed electronic properties of RE doped GaN and ZnO found in the literature. The RE impurities oxidation states are in general trivalent in both crystal systems and introduce no energy levels in the gap region. Our Hubbard U potential correction, obtained in a self-consistent way, depends on the considered element and the neighborhood, and it is not an universal parameter. Moreover, our investigation shows that the adopted procedure is totally appropriate to describe the electronic correlation of the 4f electrons.

Pomocí molekulového modelování je možné předpovídat chování nových látek a napomáhá při jinak obtížné interpretaci experimentálních dat. Cílem práce byla predikce vybraných vlastností polymeračních katalyzátorů na bázi karbenů, predikce jejich struktur a spektrálních charakteristik a studie mechanismu polymerace za otevření kruhu laktidu. K ověření chování karbenů a jejich prekurzorů ve formě chloridů byly studovány vybrané charakteristiky molekuly. Byl proveden výpočet vybraných molekulových orbitalů a elektrostatických map. Následně pomocí počítačových programů byly získány teoretické vazebné délky a úhly vybraných imidazolových a imidazolinových sloučenin, karbenů a jejich možných produktů hydrolýzy. Data strukturně podobných, již charakterizovaných sloučenin, byla získána z CCDC (Cambridge Crystallographic Data Centre) a následně byla konfrontována s vypočítanými daty. Byla změřena infračervená a Ramanova spektra imidazolové soli a infračervené spektrum příslušného karbenu. Tato spektra byla konfrontována s napredikovanými. Pro lepší interpretaci spekter byla spočítána spektra možných produktů hydrolýzy. Následně byl studován mechanismus polymerace za otevření kruhu laktidu. Na základě spočítaných energií stacionárních bodů byl navržen nový mechanismus polymerace.

This work describes theoretical studies on molecular and electronic structures of lanthanide-based single-molecule magnets focusing on their magnetic properties. In this work, two main problems are covered: the structural ordering of endohedral fullerenes in different supramolecular arrangements, and the magnetic anisotropy of lanthanides in different charge coordinations. The basic methodes used in this work are density functional theory and multiconfigurational self-consistent field.:CHAPTER 1. THEORETICAL FOUNDATIONS OF RARE-EARTH MAGNETISM 12 1.1. Single-molecule magnetism and 4f-elements 14 1.1.1. Electronic structure of 4f-elements 16 1.1.2. LS-coupling scheme 19 1.1.3. Parameterization of the Crystal-Field splitting effect. 20 1.1.4. Zeeman splitting for a free ion 24 1.1.5. Spin Hamiltonian and pseudospin approximation 24 1.1.6. Kramers theorem 25 1.1.7. Weak and strong molecular interactions. 26 1.2. Computational methods in application to Ln-based SMMs 27 1.2.1. Density functional theory (DFT). 28 1.2.2. Multiconfigurational methods in quantum chemistry 33 1.3. Role of molecular structure in single-molecular magnetism 41 1.3.1. Complexes of SMMs with organic molecules 45 1.3.2. SMMs deposited on surfaces 46 CHAPTER 2. STRUCTURAL ORDERING IN COCRYSTALS OF EMFs AND Ni(OEP) 49 2.1. Ordering in endohedral metallofullerenes 49 2.2. Modeling details 51 2.3. Conformer analysis 54 2.4. Electrostatic potential 58 CHAPTER 3. ISOMERISM OF Dy2ScN@C80 DEPOSITED ON SURFACES 61 3.1. Modeling details 62 3.2. Cluster conformation analysis 69 3.3. Charge density analysis 75 CHAPTER 4. Ho|MgO AS A SINGLE-ATOMIC MAGNET. FV-MAGNETISM. 80 4.1. DFT description of Ln|MgO 85 4.2. Ho|MgO system: ab initio calculations 92 4.3. Magnetic properties of lanthanides with FV magnetism 99 4.4. Generalized ligand field and spin Hamiltonians for FV systems. 101 CHAPTER 5. FV-MAGNETISM IN [Ln2+] METALLOCENE COMPLEXES 107 5.1. TbII(CpiPr5)2 DFT-model 108 5.2. FV-interaction in terms of ab initio multiconfigurational approach 113 5.3. Point-charge model 115

In this thesis, several development steps for the incremental method are presented. At first, the extension of the incremental scheme to other quantities than the energy is advanced in terms of molecular dipole moments. In this context, a revised error correction as well as the template localization for the treatment of aromatic systems are introduced. As a second enhancement, a new implementation of the template localization ensures a higher stability of this algorithm step and, thus, of the incremental scheme. Finally, pair natural orbitals (PNOs) are utilized in the incremental method with the aim of an increased efficiency. The PNO approach is re-assessed in context of the incremental expansion leading to both small incremental and PNO local errors for reaction, intermolecular interaction and cluster binding energies. The higher efficiency due to the twofold reduction of the computational efforts by the PNO and the incremental approaches is demonstrated for molecular clusters. Additionally, the complete basis set (CBS) limit is targetted by using the efficient MP2-based focal-point approach to the incremental scheme (with and without PNOs). Finally, based on these improvements of the performance, the PNO-based incremental scheme is applied to support a computational study regarding the modelling of the reaction mechanism for the base-catalyzed twin polymerization.