O método ISPH (do inglês, Incompressible Smoothed Particle Hydrodynamics) é um método de aproximação livre de malha que, através de um conjunto finito de partículas e uma formulação completamente Lagrangeana, permite a solução de diversos tipos de escoamentos. Entretanto, sua aplicação para escoamentos bifásicos ainda é um desafio, principalmente no que refere-se à manutenabilidade da interface entre fluidos. Diante disso, nesta tese é apresentado o desenvolvimento de um código numérico baseado no método ISPH, sendo propostas duas técnicas de tratamento de interface. Para tanto é realizado um estudo a cerca do método, considerando diferentes metodologias, e analisando pontos específicos, tais como a solução do campo de pressões. São apresentados resultados que mostram a eficácia do método, tanto em escoamentos monofásicos, quanto em escoamentos multifásicos, onde, neste caso, são destacadas as melhorias obtidas através das técnicas de tratamento de interface propostas. Por fim, é realizado um estudo do comportamento de misturas bifásicas, com referência ao fenômeno da inversão de fase / Incompressible Smoothed Particle Hydrodynamics (ISPH) method is a meshless approximation that has been used to simulate several types of fluid flows, through a finite particle set and fully lagrangian formulation. The application of ISPH method in two-fluid flow simulations however, has presented many challenges, specially related to the presence of the interface between different fluids. Thus, we present in this study the development of a numerical code based on ISPH, introducing novel interface treatment techniques. A thorough study about this method is provided, considering different methodologies and analysing specific points such as the position of the interface and the obtained pressure field. Results have been presented to show the methods developed in this thesis efficiently simulate two-fluid flows, illustrating the improvements achieved by the proposed interface treatment techniques. Finally, a study of biphasic mixture behavior is carried out with reference to phase inversion phenomena

O método ISPH (do inglês, Incompressible Smoothed Particle Hydrodynamics) é um método de aproximação livre de malha que, através de um conjunto finito de partículas e uma formulação completamente Lagrangeana, permite a solução de diversos tipos de escoamentos. Entretanto, sua aplicação para escoamentos bifásicos ainda é um desafio, principalmente no que refere-se à manutenabilidade da interface entre fluidos. Diante disso, nesta tese é apresentado o desenvolvimento de um código numérico baseado no método ISPH, sendo propostas duas técnicas de tratamento de interface. Para tanto é realizado um estudo a cerca do método, considerando diferentes metodologias, e analisando pontos específicos, tais como a solução do campo de pressões. São apresentados resultados que mostram a eficácia do método, tanto em escoamentos monofásicos, quanto em escoamentos multifásicos, onde, neste caso, são destacadas as melhorias obtidas através das técnicas de tratamento de interface propostas. Por fim, é realizado um estudo do comportamento de misturas bifásicas, com referência ao fenômeno da inversão de fase / Incompressible Smoothed Particle Hydrodynamics (ISPH) method is a meshless approximation that has been used to simulate several types of fluid flows, through a finite particle set and fully lagrangian formulation. The application of ISPH method in two-fluid flow simulations however, has presented many challenges, specially related to the presence of the interface between different fluids. Thus, we present in this study the development of a numerical code based on ISPH, introducing novel interface treatment techniques. A thorough study about this method is provided, considering different methodologies and analysing specific points such as the position of the interface and the obtained pressure field. Results have been presented to show the methods developed in this thesis efficiently simulate two-fluid flows, illustrating the improvements achieved by the proposed interface treatment techniques. Finally, a study of biphasic mixture behavior is carried out with reference to phase inversion phenomena

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This thesis examines strategies to exploit existing materials and techniques to advance organic thin film transistor (OTFT) technology in device performance, device manufacture, and device integration. To enhance device performance, optimization of plasma enhanced chemical vapor deposited (PECVD) gate dielectric thin film and investigation of interface engineering methodologies are explored. To advance device manufacture, OTFT fabrication strategies are developed to enable organic circuit integration. Progress in device integration is achieved through demonstration of OTFT integration into functional circuits for applications such as active-matrix displays and radio frequency identification (RFID) tags. OTFT integration schemes featuring a tailored OTFT-compatible photolithography process and a hybrid photolithography-inkjet printing process are developed. They enable the fabrication of fully-patterned and fully-encapsulated OTFTs and circuits. Research on improving device performance of bottom-gate bottom-contact poly(3,3'''-dialkyl-quarter-thiophene) (PQT-12) OTFTs on PECVD silicon nitride (SiNx) gate dielectric leads to the following key conclusions: (a) increasing silicon content in SiNx gate dielectric leads to enhancement in field-effect mobility and on/off current ratio; (b) surface treatment of SiNx gate dielectric with a combination of O2 plasma and octyltrichlorosilane (OTS) self-assembled monolayer (SAM) delivers the best OTFT performance; (c) an optimal O2 plasma treatment duration exists for attaining highest field-effect mobility and is linked to a “turn-around” effect; and (d) surface treatment of the gold (Au) source/drain contacts by 1-octanethiol SAM limits mobility and should be omitted. There is a strong correlation between the electrical characteristics and the interfacial characteristics of OTFTs. In particular, the device mobility is influenced by the interplay of various interfacial mechanisms, including surface energy, surface roughness, and chemical composition. Finally, the collective knowledge from these investigations facilitates the integration of OTFTs into organic circuits, which is expected to contribute to the development of new generation of all-organic displays for communication devices and other pertinent applications. A major outcome of this work is that it provides an economical means for organic transistor and circuit integration, by enabling use of the well-established PECVD infrastructure, yet not compromising the performance of electronics.

This thesis examines strategies to exploit existing materials and techniques to advance organic thin film transistor (OTFT) technology in device performance, device manufacture, and device integration. To enhance device performance, optimization of plasma enhanced chemical vapor deposited (PECVD) gate dielectric thin film and investigation of interface engineering methodologies are explored. To advance device manufacture, OTFT fabrication strategies are developed to enable organic circuit integration. Progress in device integration is achieved through demonstration of OTFT integration into functional circuits for applications such as active-matrix displays and radio frequency identification (RFID) tags. OTFT integration schemes featuring a tailored OTFT-compatible photolithography process and a hybrid photolithography-inkjet printing process are developed. They enable the fabrication of fully-patterned and fully-encapsulated OTFTs and circuits. Research on improving device performance of bottom-gate bottom-contact poly(3,3'''-dialkyl-quarter-thiophene) (PQT-12) OTFTs on PECVD silicon nitride (SiNx) gate dielectric leads to the following key conclusions: (a) increasing silicon content in SiNx gate dielectric leads to enhancement in field-effect mobility and on/off current ratio; (b) surface treatment of SiNx gate dielectric with a combination of O2 plasma and octyltrichlorosilane (OTS) self-assembled monolayer (SAM) delivers the best OTFT performance; (c) an optimal O2 plasma treatment duration exists for attaining highest field-effect mobility and is linked to a “turn-around” effect; and (d) surface treatment of the gold (Au) source/drain contacts by 1-octanethiol SAM limits mobility and should be omitted. There is a strong correlation between the electrical characteristics and the interfacial characteristics of OTFTs. In particular, the device mobility is influenced by the interplay of various interfacial mechanisms, including surface energy, surface roughness, and chemical composition. Finally, the collective knowledge from these investigations facilitates the integration of OTFTs into organic circuits, which is expected to contribute to the development of new generation of all-organic displays for communication devices and other pertinent applications. A major outcome of this work is that it provides an economical means for organic transistor and circuit integration, by enabling use of the well-established PECVD infrastructure, yet not compromising the performance of electronics.

This project studied two different ways of imposing boundary conditions weakly with the finite difference summation-by-parts (SBP) operators. These operators were combined with the boundary handling methods of simultaneous-approximation-terms (SAT) and the Projection to impose homogeneous Neumann and Dirichlet boundary conditions. The convergence rate of both methods was analyzed for different boundary conditions for the one-dimensional (1D) Schrödinger equation, without potential, which resulted in both methods performing similarly. A multi-block discretization was then implemented and different combinations of SBP-SAT and SBP-Projection were applied to impose inner boundary conditions of continuity between the blocks. A convergence study of the different methods of imposing the inner BC:s was conducted for the 1D Schrödinger equation without potential. The resulting convergence was the same for all methods and it was concluded that they performed similarly. Methods involving SBP-Projection had the slight advantage of faster computation time. Finally, the 1D Gross-Pitaevskii equation (GPE) and the 1D Schrödinger equation were analyzed with a step potential. The waves propagating towards the potential barrier were in both cases partially transmitted and partially reflected. The waves simulated with the Schrödinger equation dispersed, while the solitons simulated with the GPE kept their shape due to the equations reinforcing non-linear term. The bright soliton was partly transmitted and partly reflected. The dark soliton was either totally reflected or totally transmitted.