The main focus of this work is the preparation, chemical and structural characterization along with the investigation of physical properties of intermetallic clathrates. Starting from the history of clathrate research, classification of clathrate types, their structural properties and possible application areas are evaluated in chapter 2. The methodologies of sample preparation and materials characterization as well as quantum chemical calculations are discussed in chapter 3. The complete characterization of Ba8Ge433 ( is a Schottky-symbol standing for vacancies),12-14 which is a parent compound for the variety of ternary variants, is the subject of chapter 4. Ba8Ge433 is a high temperature phase,12 which was prepared for the first time as single phase bulk material in this work.15, 16 In this way, the intrinsic transport properties could be investigated without influence of grain boundary and impurity effects. The transport behavior is analyzed at low and high temperatures and referred to the former results. In addition, crystal structure and vacancy ordering in terms of the reaction conditions are discussed. Chemical bonding in Ba8Ge433 is investigated by topological analysis of the electron localizability indicator and the electron density. Chapter 5 deals with the preparation, phase analysis, crystal structure and physical properties of BaGe5, which constitutes a new clathrate type oP60.17, 18 So far, two clathrate types were known in the binary system Ba – Ge, namely the clathrate cP124 Ba6Ge25,19-21 and the clathrate-I Ba8Ge433. Originally, BaGe5 was detected by optical and scanning electron microscopy within the grains of Ba8Ge433.12 Once the preparation of phase-pure Ba8Ge433 was achieved, it became possible to make detailed investigations of its decomposition along with the formation of BaGe5. A detailed theoretical and experimental analysis on the relation between crystal structure and physical properties of BaGe5 is presented. In chapter 6, a thorough structural characterization and the physical properties of clathrates in the system Ba – Ni – Ge is presented based on the subtle relation between the crystal structure containing vacancies and the thermoelectric properties. During the investigations in this system, a large single crystal was grown by Nguyen et al. 22, 23 from the melt with the composition Ba8Ni3.5Ge42.10.4. A systematic reinvestigation of the phase relations in this system was performed and the influence of different Ni content to the crystal structure and physical properties is evaluated. The Si-based ternary clathrate with composition Ba8–δNixySi46–x–y is the subject of chapter 7. The phase relations and the homogeneity range are established. The crystal structure taking into account vacancies in the framework is discussed. Physical properties of bulk pieces are analyzed and the results are related to the sample composition. In addition, first-principles electronic structure calculations are carried out to assess variations in the electronic band structure, phase stability and chemical bonding.24 Chapter 8 reports on the intermetallic compound Ba3Si4,25, 26 which was encountered during the investigations on the Ba – Ni – Si phase diagram. The discussion covers issues related to preparation, crystal structure, phase diagram analysis, electrical and magnetic properties, NMR measurements, quantum mechanical calculations and oxidation to nanoporous silicon with gaseous HCl. Besides my contributions to the NoE CMA, I studied under the Priority Program 1178 of Deutsche Forschungsgemeinschaft “Experimental electron density as the key for understanding chemical interactions” with the project of “Charge distribution changes by external electric fields: investigations of bond selective redistributions of valence electron densities”. Chapter 9 deals with the preparation of chalcopyrites ZnSiP2 and CuAlS2 for experimental charge density analysis. Both phases show semiconducting properties and have non-centrosymmetric structures with high space group symmetry as needed to investigate the structural changes induced by external electric field. In this chapter, I describe the preparation and the crystal structure analyses of ZnSiP2 and CuAlS2 including issues related to the data collection as well as the results of NMR investigation.

The main focus of this work is the preparation, chemical and structural characterization along with the investigation of physical properties of intermetallic clathrates. Starting from the history of clathrate research, classification of clathrate types, their structural properties and possible application areas are evaluated in chapter 2. The methodologies of sample preparation and materials characterization as well as quantum chemical calculations are discussed in chapter 3. The complete characterization of Ba8Ge433 ( is a Schottky-symbol standing for vacancies),12-14 which is a parent compound for the variety of ternary variants, is the subject of chapter 4. Ba8Ge433 is a high temperature phase,12 which was prepared for the first time as single phase bulk material in this work.15, 16 In this way, the intrinsic transport properties could be investigated without influence of grain boundary and impurity effects. The transport behavior is analyzed at low and high temperatures and referred to the former results. In addition, crystal structure and vacancy ordering in terms of the reaction conditions are discussed. Chemical bonding in Ba8Ge433 is investigated by topological analysis of the electron localizability indicator and the electron density. Chapter 5 deals with the preparation, phase analysis, crystal structure and physical properties of BaGe5, which constitutes a new clathrate type oP60.17, 18 So far, two clathrate types were known in the binary system Ba – Ge, namely the clathrate cP124 Ba6Ge25,19-21 and the clathrate-I Ba8Ge433. Originally, BaGe5 was detected by optical and scanning electron microscopy within the grains of Ba8Ge433.12 Once the preparation of phase-pure Ba8Ge433 was achieved, it became possible to make detailed investigations of its decomposition along with the formation of BaGe5. A detailed theoretical and experimental analysis on the relation between crystal structure and physical properties of BaGe5 is presented. In chapter 6, a thorough structural characterization and the physical properties of clathrates in the system Ba – Ni – Ge is presented based on the subtle relation between the crystal structure containing vacancies and the thermoelectric properties. During the investigations in this system, a large single crystal was grown by Nguyen et al. 22, 23 from the melt with the composition Ba8Ni3.5Ge42.10.4. A systematic reinvestigation of the phase relations in this system was performed and the influence of different Ni content to the crystal structure and physical properties is evaluated. The Si-based ternary clathrate with composition Ba8–δNixySi46–x–y is the subject of chapter 7. The phase relations and the homogeneity range are established. The crystal structure taking into account vacancies in the framework is discussed. Physical properties of bulk pieces are analyzed and the results are related to the sample composition. In addition, first-principles electronic structure calculations are carried out to assess variations in the electronic band structure, phase stability and chemical bonding.24 Chapter 8 reports on the intermetallic compound Ba3Si4,25, 26 which was encountered during the investigations on the Ba – Ni – Si phase diagram. The discussion covers issues related to preparation, crystal structure, phase diagram analysis, electrical and magnetic properties, NMR measurements, quantum mechanical calculations and oxidation to nanoporous silicon with gaseous HCl. Besides my contributions to the NoE CMA, I studied under the Priority Program 1178 of Deutsche Forschungsgemeinschaft “Experimental electron density as the key for understanding chemical interactions” with the project of “Charge distribution changes by external electric fields: investigations of bond selective redistributions of valence electron densities”. Chapter 9 deals with the preparation of chalcopyrites ZnSiP2 and CuAlS2 for experimental charge density analysis. Both phases show semiconducting properties and have non-centrosymmetric structures with high space group symmetry as needed to investigate the structural changes induced by external electric field. In this chapter, I describe the preparation and the crystal structure analyses of ZnSiP2 and CuAlS2 including issues related to the data collection as well as the results of NMR investigation.

The aim of the present work is to clarify the interplay between the complex technological chain of crystal preparation, chemical and structural perfection of grown crystals of intermetallic compounds and oxides and their physical properties. This technological chain includes detailed studies of unknown or insufficiently known phase diagrams, their correlation with growth conditions and optimisation of process parameters for obtaining single crystals with high chemical and physical perfection. The measurements of the physical properties of the grown crystals such as superconductivity, thermoelectric or dielectric properties not only show new features and properties for application of the materials obtained, but also allow conclusions of the crystal perfection. The studies are focused on the following systems: RENi2B2C borocarbides (RE=Y, Tb or Ho) displaying superconductivity, magnetic order and a strong interplay between magnetic and superconducting properties for YNi2B2C, TbNi2B2C, HoNi2B2C, respectively; CeSi2-?Ô and Ru2Si3 as examples of systems with magnetic and promising thermoelectric properties, respectively; MgB2 and LiBC to test of theoretical predictions of the new superconducting intermetallic compounds discovered in the last years; SrTiO3 and SrZrO3 oxide compounds with special dielectric and optical properties. For this wide spectrum of substances necessarily different growth techniques were applied. That is mainly the floating zone (FZ) or travelling solvent floating zone (TSFZ) techniques with optical heating. Flux techniques were used if the vapour pressure of composing elements is high such as for Mg and Li. The crucible free FZ technique is very attractive for the crystal growth of these intermetallic and oxide compounds to avoid contamination with the crucible material, if the melts have very high chemical reactivity, high melting temperatures and if a large crystal size (at least 3-5 mm) is desired for corresponding physical measurements. One special aim in the presented work is the optimisation of the preparation and growth process features with respect to crystal perfection, establishing new relationships between process parameters, crystal perfection, crystallographic structure, composition of grown crystals and the related physical properties. Optimisation of crystal growth process requires own constitutional studies of growth relevant parts of corresponding multicomponent phase diagrams. Therefore, parts of the phase diagrams were experimentally revealed by differential thermal analysis (DTA), optical metallography and EPMA and partially combined with CALPHAD calculations.

The aim of the present work is to clarify the interplay between the complex technological chain of crystal preparation, chemical and structural perfection of grown crystals of intermetallic compounds and oxides and their physical properties. This technological chain includes detailed studies of unknown or insufficiently known phase diagrams, their correlation with growth conditions and optimisation of process parameters for obtaining single crystals with high chemical and physical perfection. The measurements of the physical properties of the grown crystals such as superconductivity, thermoelectric or dielectric properties not only show new features and properties for application of the materials obtained, but also allow conclusions of the crystal perfection. The studies are focused on the following systems: RENi2B2C borocarbides (RE=Y, Tb or Ho) displaying superconductivity, magnetic order and a strong interplay between magnetic and superconducting properties for YNi2B2C, TbNi2B2C, HoNi2B2C, respectively; CeSi2-?Ô and Ru2Si3 as examples of systems with magnetic and promising thermoelectric properties, respectively; MgB2 and LiBC to test of theoretical predictions of the new superconducting intermetallic compounds discovered in the last years; SrTiO3 and SrZrO3 oxide compounds with special dielectric and optical properties. For this wide spectrum of substances necessarily different growth techniques were applied. That is mainly the floating zone (FZ) or travelling solvent floating zone (TSFZ) techniques with optical heating. Flux techniques were used if the vapour pressure of composing elements is high such as for Mg and Li. The crucible free FZ technique is very attractive for the crystal growth of these intermetallic and oxide compounds to avoid contamination with the crucible material, if the melts have very high chemical reactivity, high melting temperatures and if a large crystal size (at least 3-5 mm) is desired for corresponding physical measurements. One special aim in the presented work is the optimisation of the preparation and growth process features with respect to crystal perfection, establishing new relationships between process parameters, crystal perfection, crystallographic structure, composition of grown crystals and the related physical properties. Optimisation of crystal growth process requires own constitutional studies of growth relevant parts of corresponding multicomponent phase diagrams. Therefore, parts of the phase diagrams were experimentally revealed by differential thermal analysis (DTA), optical metallography and EPMA and partially combined with CALPHAD calculations.