A new class of &amp / #960 / -conjugated monomers was synthesized with combination of electron donating and electron-withdrawing heterocyclics to understand the effects of structural differences on electrochemical and optoelectronic properties of the resulting polymers. The use of this alternating donor-acceptor-donor strategy allows the synthesis of low band gap polymers in which the redox, electronic, and optical properties are controlled through easily approachable synthetic modification of the polymer backbone. This control allows fine-tuning of the band gap to values between 1.0 and 1.8 eV by making structural changes. These structural manipulations yield varied electronic absorption energies for a range of colors in the neutral polymer films, multi-colored electrochromism, and accessible states for reduction leading to n-type doping. The polymers prepared were characterized using cyclic voltammetry, colorimetry, and UV-Vis-NIR spectroscopy demonstrating that the polymers can undergo both p- and n-type doping and color changes in both redox states.

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第18295号 / 工博第3887号 / 新制||工||1596(附属図書館) / 31153 / 京都大学大学院工学研究科高分子化学専攻 / (主査)教授 中條 善樹, 教授 赤木 和夫, 教授 辻 康之 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DGAM

Ce travail de recherche prédictive, couplé à des synthèses expérimentales, a pour but d'anticiper la bonne adéquation entre un nouveau polymère donneur de type P3HT et un composé accepteur innovant à base de graphène. Cette étude a notamment porté sur i) la bande d'absorption du polymère donneur « low band gap », ii) sa robustesse face à la dégradation (cristallinité, résistance à l'oxydation), iii) la modulation des propriétés électroniques d'un dérivé de graphène (accepteur) en adéquation avec le donneur. Les résultats montrent que les polythiophènes ayant un substituant éther OR permettent l'amélioration de la conjugaison, de la rigidité, de la cristallinité et de la photostabilité tout en étant électroniquement compatible avec l'hexabenzocoronène fonctionnalisé (acide caorboxylique). De plus, ce nouvel accepteur sera pleinement compatible avec une électrode de graphite grâce à sa prédisposition à l'empilement colonnaire. / This predictive research work, combined with an experimental study, aims at anticipate the behavior of a new donor :acceptor pair constituted by a P3HT-type of polymer and an innovative graphene-based acceptor material (HBC). This study is particularly interested in i) the absorption band of the donor (a « low band gap » polymer) and ii) its resistance towards degradation (cristallinity, oxidation stability), and finally iii) the modulation of the electronic properties of the acceptor, in keeping with those of the donor. Results show that polythiophenes grafted with an –OR group improve both conjugation, rigidity, cristallinity and photostability, in addition to their great electronic compatibility with functionalized HBCs. Besides, this new acceptor material will be fully compatible with a graphite electrode, thanks to its columnar structuration.

Durable, cheap, and lightweight polymer based solar cells are needed, if simply to meet the demand for decentralized electrical power production in traditionally “off-grid” areas. Using a blend of Poly(3-hexylthiophene-2,5-diyl) (P3HT), Phenyl-C61-butyric acid methyl ester (PCBM), and the low band-gap polymer Poly[2,6-(4,4-bis-(2- ethylhexyl)-4H-cyclopenta [2,1-b;3,4-b′]dithiophene)-alt-4,7(2,1,3-benzothiadiazole)] (PCPDTBT), we have fabricated devices with a wide spectral response and 3% power conversion efficiency in AM 1.5 conditions; however, this thin film system exhibits only 0.43 optical density at 500 nm. To improve the performance of this polymer blend photovoltaic, we aim to increase absorption by adding CdSe(ZnS) core (shell) quantum dots. Four groups of devices are fabricated: a control group with an active polymer layer of 16 mg/mL P3HT, 16 mg/mL PCBM, and 4 mg/mL PCPDTBT; and three groups with dispersed quantum dots at 4 mg/ml, 1 mg/mL, and 0.25 mg/mL. The (CdSe)ZnS quantum dots are coated with octadecylamine ligands and have a peak absorbance at 560 nm and peak emission at 577 nm. The active layer was dissolved in chlorobenzene solvent and spun on glass substrates, patterned with indium tin oxide. The devices were then annealed for fifteen minutes at 110° C, 140° C, and 170° C. Current-voltage characteristic curves v and optical density data were taken before and after the anneal step. Finally, surface characterization was conducted with atomic force microscopy and electrostatic force microscopy. When compared to the control, the sensitized devices exhibited increased absorption and depressed electrical performance with increasing quantum dot loading. The surface morphology, both electrical and physical, showed deviation from the typical values and patterns shown by the control that increased with quantum dot loading. When the degrading electrical characteristics, increasing optical absorbance, and surface changes, are considered together, it becomes likely that the quantum dots interact in a significant manner with the morphology of the P3HT phase, which leads to an overall decrease in performance.