In this dissertation, the extraordinary magnetoresistance (EMR) effect in semiconductor/metal hybrid structures is studied to improve the performance in sensing applications. Using two-dimensional finite element simulations, the geometric dependence of the output sensitivity, which is a more relevant parameter for EMR sensors than the magnetoresistance (MR), is studied. The results show that the optimal geometry in this case is different from the geometry reported before, where the MR ratio was optimized. A device consisting of a semiconductor bar with length/width ratio of 5~10 and having only 2 contacts is found to exhibit the highest sensitivity. A newly developed three-dimensional finite element model is employed to investigate parameters that have been neglected with the two dimensional simulations utilized so far, i.e., thickness of metal shunt and arbitrary semiconductor/metal interface. The simulations show the influence of those parameters on the sensitivity is up to 10 %. The model also enables exploring the EMR effect in planar magnetic fields. In case of a bar device, the sensitivity to planar fields is about 15 % to 20 % of the one to perpendicular fields. 5 A “top-contacted” structure is proposed to reduce the complexity of fabrication, where neither patterning of the semiconductor nor precise alignment is required. A comparison of the new structure with a conventionally fabricated device shows that a similar magnetic field resolution of 24 nT/√Hz is obtained. A new 3-contact device is developed improving the poor low-field sensitivity observed in conventional EMR devices, resulting from its parabolic magnetoresistance response. The 3-contact device provides a considerable boost of the low field response by combining the Hall effect with the EMR effect, resulting in an increase of the output sensitivity by 5 times at 0.01 T compared to a 2-contact device. The results of this dissertation provide new insights into the optimization of EMR devices for sensor applications. Two novel concepts are presented, which are promising for realizing EMR devices with high spatial resolution and for opening new applications for EMR sensors in the low-field regime.

Abstract Recently, the large magneto-resistance effects in epitaxial manganite thin films has interested in the doped manganite perovskite materials for magnetic random access memory (MRAM) and read-head application. The relation between the magneto-resistance and microstructure of the colossal magneto-resistance materials has been evaluated in this study. Different thickness of La0.67Ca0.33Mn03 (LCMO) thin films were grown on (001) MgO and (001) SrTi03 (STO) substrates at growth temperature 750 degree C with RF magnetron sputtering technique, respectively. These substrates provide two different lattice-mismatch conditions for the LCMO films (+9% for MgO and +1% for STO). The crystal structure of LCMO films were characterized with X-ray diffraction (XRD), the surface morphology of LCMO films were observed by scanning electron microscope (SEM), the interface of microstructure between LCMO films and substrate were studied by transmission electron microscope (TEM), the thickness and chemical composition of LCMO films were determined by Rutherford backscattering spectrometer (RBS), and finally the resistance and I-M transition temperature were evaluated at temperature range from 77K to 300K. The results show that the epitaxial LCMO films with a superlattice structure were obtained on STO substrate and polycrystal structure of LCMO films were on MgO substrate due to larger lattice mismatch.. The transition temperature of magneto-resistance of LCMO thin film is quite sensitive with film thickness. The transition temperature increases with film thickness increased. When the film with thickness excess of 2000A, the transition temperature is nearly same as that of LCMO bulk material.. The existed strain and the microstructure of LCMO films are two important factors related with magnetic resistance and electrical properties of LCMO films.

Fabrication of molecular spin devices with ferromagnetic electrodes coupled with a high spin molecule is an important challenge. This doctoral study concentrated on realizing a novel molecular spin device by the bridging of magnetic molecules between two ferromagnetic metal layers of a ferromagnetic-insulator-ferromagnetic tunnel junction on its exposed pattern edges. At the exposed sides, distance between the two metal electrodes is equal to the insulator film thickness; insulator film thickness can be precisely controlled to match the length of a target molecule. Photolithography and thin-film deposition were utilized to produce a series of tunnel junctions based on molecular electrodes of multilayer edge molecular electrodes (MEME) for the first time. In order to make a microscopic tunnel junction with low leakage current to observe the effect of ~10,000 molecules bridged on the exposed edge of a MEME tunnel barrier, growth conditions were optimized; stability of a ~2nm alumina insulator depended on its ability to withstand process-induced mechanical stresses. The conduction mechanism was primarily 1) tunneling from metal electrode to oranometalic core by tunneling through alkane tether that acts as a tunnel barrier 2) rapid electron transfer within the oranometalic Ni-CN-Fe cube and 3) tunneling through alkane tether to the other electrode. Well defined spin-states in the oranometalic Ni-CN-Fe cube would determine electron spin-conduction and possibly provide a mechanism for coupling. MEME with Co/NiFe/AlOx/NiFe configurations exhibited dramatic changes in the transport and magnetic properties after the bridging of oranometalic molecular clusters with S=6 spin state. The molecular cluster produced a strong antiferromagnetic coupling between two ferromagnetic electrodes to the extent, with a lower bound of 20 erg/cm,2 that properties of individual magnetic layers changed significantly at RT. Magnetization, ferromagnetic resonance and magnetic force microscopy studies were performed. Transport studies of this configuration of MEME exhibited molecule-induced current suppression by ~6 orders by blocking both molecular channels and tunneling between metal leads in the planar 25μm2 tunnel junction area. A variety of control experiments were performed to validate the current suppression observation, especially critical due to observed corrosion in electrochemical functionalization step. The spin devices were found to be sensitive to light radiation, temperature and magnetic fields. Along with the study of molecular spin devices, several interesting ideas such as ~9% energy efficient ultrathin TaOx based photocell, simplified version of MEME fabrication, and chemical switching were realized. This doctoral study heralds a novel molecular spin device fabrication scheme; these molecular electrodes allow the reliable study of molecular components in molecular transport.

This project focused on two aspects of magnetite thin films. The first was to find optimum parameters and conditions for deposition of stoichiometeric Magnetite films using pulsed laser deposition (PLD). The second aspect was the characterization of the magnetic and electrical properties in order to broaden the spectrum of understanding of PLD Magnetite films. These properties were also investigated in terms of the substrates on which the films were deposited. Discussed in this thesis are deposition parameters, structural characteristics, magnetic and electrical characteristics of the films in terms of different substrates and film thicknesses. The discussion consists of structural parameters obtained using X- ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive spectroscopy (EDS), and electric properties such as resistance as a function of temperature and voltage dependence on the applied current. The magnetic properties measured were the magneto-resistance, M-H hysteresis loop, and magnetization as a function of temperature. The results obtained are then compared with pre-existing literature data. It will be shown that there is an impurity phase that may be seen when magnetite films are deposited on Sillicon dioxide substrates.

Magnetization dynamics in nano-contact spin torque oscillators (STOs) is investigated from an experimental and theoretical point of view. The fundamentals of magnetization dynamics due to spin transfer torque are given. A custom-made high frequency (up to 46 GHz) in large magnetic fields (up to 2.2 T) microwave characterization setup has been built for the purpose and described in this thesis. A unique feature of this setup is the capability of applying magnetic fields at any direction θe out of the sample plane, and with high precision. This is particularly important, because the (average) out-of-plane angle of the STO free magnetic layer has fundamental impact on spin wave generation and STO operation. By observing the spin wave spectral emission as a function of θe, we find that at angles θe below a certain critical angle θcr, two distinct spin wave modes can be excited: a propagating mode, and a localized mode of solitonic character (so called spin wave bullet). The experimental frequency, current threshold and frequency tuneability with current of the two modes can be described qualitatively by analytical models and quantitatively by numerical simulations. We are also able to understand the importance, so far underestimated, of the Oersted field in the dynamics of nano-contact STOs. In particular, we show that the Oersted field strongly affects the current tuneability of the propagating mode at subcritical angles, and it is also the fundamental cause of the mode hopping observed in the time-domain. This mode hopping has been observed both experimentally using a state-of-the-art real-time oscilloscope and corroborated by micromagnetic simulations. Micromagnetic simulations also reveal details of the spatial distribution of the spin wave excitations. By investigating the emitted power as a function of θe, we observed two characteristic behaviors for the two spin wave modes: a monotonic increase of the power for increasing out-of-plane angles in the case of the propagating mode; an increase towards a maximum power followed by a drop of it at the critical angle for the localized mode. Both behaviors are reproduced by micromagnetic simulations. The agreement with the simulations offers also a way to better understand the precession dynamics, since the emitted power is strongly connected to the angular variation of the giant magnetoresistance signal. We also find that the injection locking of spin wave modes with a microwave source has a strong dependence on θe, and reaches a maximum locking strength at perpendicular angles. We are able to describe these results in the theoretical framework of non-linear spin wave dynamics. / QC 20101130

Made available in DSpace on 2016-08-18T18:19:25Z (GMT). No. of bitstreams: 1 Carlos Cesar Costa.pdf: 2011505 bytes, checksum: 17efa54b3a1a2bd2009b553d5382bb31 (MD5) Previous issue date: 2008-12-05 / In the present work of dissertation of the master's degree course, we studied the magnetic properties of films simple nanometric's as: iron on oxide of magnesium (F/MgO) and permalloy (Fe Ni) in room temperature, obtained by the eltro-deposition process by sputtering. The experimental results were interpreted in agreement with the models phenomenological that take into account the most relevant terms of the magnetic free energy of the system. We made an approach in accordance with the literature on the main mechanisms that originate the electric resistance in magnetic metallic films, such as: resistance electric ohm's, effects hall, anisotropic magnetoresistance (AMR). it is made a description of the main experimental techniques used in the characterization of films nanometric's, as the Magnetometer Optical for Kerr Effect (MOKE), Ferromagnetic Resonance (FMR) and Magnetoresistance (MR). This last technique, that it uses the method of the four tips, it is used to obtain the magnetoresistance curves. In this work, we studied the effect of the anisotropic magnetoresistance in simple films, where the magnetoresistance curves are associated to the competitions enter the energies Zeeman and of anisotropic magnetic. The effect of AMR was verifies for the samples of films nanometric's through numeric simulation. For the development of the research, we set up a Device of Variation of Magnetic Field DC (DVCM DC) and the experimental data are obtained through virtual instrumentation. The magnetoresistance curves were interpreted in agreement with the model phenomenological and we still used the hysteresis loop obtained by MOKE as parameters. / No presente trabalho de dissertação do curso de mestrado, estudamos as propriedades magnéticas de filmes nanométricos simples como: ferro sobre óxido de magnésio (Fe/MgO) e permalloy (Fe Ni) em temperatura ambiente, obtidos pelo processo de eltro-deposição por sputtering. Os resultados experimentais foram interpretados de acordo com os modelos fenomenológicos que levam em conta os termos mais relevantes da energia livre magnética do sistema. Fizemos uma abordagem em conformidade com a literatura sobre os principais mecanismos que originam a resistência elétrica em filmes metálicos magnéticos, tais como: resistência elétrica ôhmica, efeito Hall, magnetoresistência anisotrópica (AMR). É feita uma descrição das principais técnicas experimentais usadas na caracterização de filmes nanométricos, como o Magnetômetro de Efeito Kerr Magneto-óptico (MOKE), Ressonância Ferromagnética (FMR) e Magneto-resistência (MR). Esta última técnica, que usa o método das quatro pontas, é utilizada para obter as curvas de magneto-resistência. Neste trabalho, estudamos o efeito da magneto-resistência anisotrópica em filmes simples, onde as curvas de magnetoresistência estão associadas às competições entre as energias Zeeman e de anisotropia magnética. O efeito da AMR foi verificado para as amostras de filmes nanométricos via simulação numérica. Para o desenvolvimento da pesquisa, montamos um Dispositivo de Variação de Campo Magnético DC (DVCM DC) e os dados experimentais são obtidos via instrumentação virtual. As curvas de magneto-resistência foram interpretadas de acordo com o modelo fenomenológico e utilizamos ainda as curvas de histerese, obtidas por MOKE como parâmetros.

Les conducteurs composites sont constitués d'hétérogénéités microscopiques mais apparaissent comme homogènes à l'échelle macroscopique. La description de leur comportement nécessite l'homogénéisation des équations de conduction régissant chacune de leurs phases. Cette thèse s'intéresse à certaines lois effectives pour les conducteurs composites en présence d'un champ magnétique constant. Dans le premier chapitre, on rappelle quelques résultats d'électrophysique (effet Hall, magnétorésistance) et de la théorie de l'homogénéisation (H-convergence) ainsi que son extension à des problèmes à forte conductivité. Dans le chapitre deux, on étudie l'effet Hall dans des composites bidimensionnels à deux phases très contrastées et on compare le résultat d'homogénéisation à celui obtenu avec une structure fibrée renforcée. Le troisième chapitre généralise ce cas particulier et étend la loi comportementale obtenue à des matériaux cylindriques non périodiques sans hypothèse géométrique sur leur section. Les chapitres deux et trois soulignent des différences importantes entre la dimension deux et la dimension trois au niveau des problèmes de conduction à fort contraste. Un quatrième chapitre est consacré à l'étude de la magnétorésistance en dimension trois et met en avant une forte interaction entre la direction du champ magnétique et l'énergie dissipée dans le matériau complétant ainsi un résultat antérieur en dimension deux. / A composite conductor is composed of microscopic heterogeneities but appears as a homogeneous medium on the macroscopic scale. Describing the behavior of such materials requires the homogenization of the conduction equations which rule each of their phases. In this PhD thesis, we study a few effective laws for composite conductors in the presence of a constant magnetic field. In the first chapter, we recall a few results on electro-physics (Hall effect, magneto-resistance) and on the homogenization theory (H-convergence) as well as its extension to high-conductivity problems. In the second chapter, we study the Hall effect in two-dimensional high-contrast two-phase composites and we compare the result to the one obtained with a three-dimensional fibre-reinforced structure. The third chapter generalizes this particular case and extends the perturbation law to non-periodic cylindrical composites without any geometrical assumption on their cross section. The chapters two and three underline the gap between dimension two and dimension three in high-conductivity problems. The fourth chapter analyses the magneto-resistance in a three-dimensional composite medium and outlines a strong interaction between the direction of the magnetic field and the dissipated energy in the material; this completes a previous work on the two-dimensional case.

京都大学 / 新制・課程博士 / 博士(工学) / 甲第23512号 / 工博第4924号 / 新制||工||1769(附属図書館) / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 白石 誠司, 教授 山田 啓文, 教授 引原 隆士 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DGAM

Tunnelmagnetowiderstandselemente (MTJ) mit einer kristallinen MgO Tunnelbarriere zwischen amorphen CoFeB-Elektroden haben Aufgrund ihres hohen Tunnelmagnetowiderstandes (TMR) und der guten Integrationsmöglichkeit in bestehende Prozesse viel Aufmerksamkeit bekommen. Dabei zeigten vorherige Berechnungen, dass die strukturellen und chemischen Eigenschaften der Grenzfläche einen signifikanten Einfluss auf den TMR aufweisen, weshalb diese Grenzfläche im Rahmen dieser Arbeit mittels quantitativer, hochauflösender und analytischer Transmissionselektronenmikroskopie analysiert wurde. Um einen hohen TMR in die diesen Systemen zu erzielen ist ein kristalliner Übergang zwischen der Tunnelbarriere und den Elektroden notwendig. Berechnungen zeigten, dass bereits wenige Monolagen kristallinen Materials an der Grenzfläche ausreichen, um einen hohen TMR in diesen Systemen zu erzielen. Ausgehend von diesen Berechnungen wurde die Mikrostruktur auf der Subnanometer-Skala an der kristallin/amorphen Grenzfläche von MgO-CoFeB in dieser Arbeit untersucht. Die experimentellen Daten wurden hierfür mittels aberrationskorrigierter, hochauflösender Transmissionselektronenmikroskopie (HRTEM) an Modellsystemproben erstellt und die vom MgO induzierte kristalline Ordnung an der Grenzfläche zum CoFeB mittels iterativen Bildserienvergleichs mit simulierten Daten quantifiziert. Zur Simulation der HRTEM-Grenzflächenabbildungen wurde die „Averaged-Projected-Potential“-Näherung genutzt, welche im Rahmen dieser Arbeit um die Berücksichtigung von monoatomaren Stufen entlang der Strahlrichtung des Mikroskops erweitert wurde. Es zeigte sich, dass mit dieser Methode die Ordnung an der MgO-CoFeB-Grenzfläche von nicht ausgelagerten Systemen gut beschrieben werden kann. In ausgelagerten Systemen kommt es dagegen zu einer Bor-diffusion aus dem a-CoFeB heraus um damit eine Kristallisation am MgO zu ermöglichen. Im zweiten Teil dieser Arbeit werden die Bordiffusion und die Kristallisation in Abhängigkeit von der Deckschicht als auch der MgO-Depositionsmethode sowohl an Modellsystemproben als auch an funktionsfähigen MTJs untersucht. Elektronen-Energie-Verlustspektroskopie (EELS) an diesen Proben konnten zeigen, dass sowohl die Deckschicht also auch die MgO-Depositionsmethode einen entscheidenden Einfluss auf die Bor-Diffusion in diesen Systemen ausüben.

This dissertation summarizes three research projects related to microwave radiation induced electron transport properties in the GaAs/AlGaAs two dimensional electron systems. In chronological order, the projects are: a microwave reflection and electron magneto-transport correlation study, the combined microwave power and polarization dependence on microwave radiation induced magneto-resistance oscillations study, and a comparative study about the effect of circularly polarized and linearly polarized microwaves radiation on magneto-resistance oscillations induced due to the microwave. These three research projects experimentally address many interesting issues in the non-equilibrium low dimensional electron transport under microwave irradiation and provide potential applications of utilizing microwave radiation induced magneto-resistance oscillations in two dimensional electron systems as a method to detect different qualities of microwaves or terahertz waves.