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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
121

Estudos das propriedades magnéticas e magnetorresistivas em válvulas de spin do tipo NiFe/Cu/NiFe/IrMn / Studies of magnetic and magnetoresistive properties in spin valves of the type NiFe/Cu/NiFe/IrMn

Vinicius Pena Coto Limeira 15 December 2017 (has links)
Válvulas de Spin têm sido utilizadas na fabricação de sensores magnéticos e memórias de acesso randômico, sendo muito importantes do ponto de vista tecnológico. Neste trabalho, foram exploradas as análises das curvas de reversão de primeira ordem da magnetorresistência (MR-FORC), bem como ajustes das curvas de histereses da magnetização e magnetorresistência, para estudar o fenômeno de exchange-bias, anisotropia magnética e propriedades magnetorresistivas. As válvulas de spin estudadas foram do tipo NiFe/Cu/NiFe/IrMn, tendo camadas semente e de cobertura de Ta, preparadas por sputtering. Um modelo fenomenológico de parede de domínios no material antiferromagnético (AFM) foi utilizado, levando em conta as anisotropias magnéticas e interações entre as camadas. Também foram consideradas certas dispersões da anisotropia dos grãos ferromagnéticos (FM) e antiferromagnéticos (com distribuições Gaussianas) em torno dos respectivos eixos de anisotropia uniaxiais. Para o ajuste da magnetização para algumas amostras, foi necessário utilizar uma rotação no plano de um ângulo nos eixos de anisotropia uniaxiais do FM e AFM, em relação à direção do campo magnético aplicado durante a deposição dos filmes. Bons ajustes das curvas de histereses das magnetizações foram obtidos nas direções medidas do campo magnético aplicado. Um método baseado em medidas de variações angulares da magnetorresistência em campos constantes foi proposto para extrair este ângulo para cada amostra. Foram obtidas razoáveis concordâncias entre estes ângulos e os correspondentes extraídos dos ajustes das curvas de magnetização. Através da análise dos diagramas da MR-FORC e de simulações indicados dos resultados dos ajustes das histereses da magnetização, foi encontrada uma relação direta entre os campos de interação (e suas incertezas) com os campos de exchange-bias (HEB) dos grãos da distribuição (extraídos das simulações, usando a largura da distribuição obtida do ajuste). Resumindo, esta análise mostrou que esta técnica permite extrair informações comparativas sobre a dispersão dos eixos de anisotropia dos grãos FM e AFM em torno do eixo de anisotropia uniaxial, o que pode ser importante na caracterização dos sensores magnetorresistivos. Além disso, análise dos diagramas MR-FORC indicaram início da presença de descontinuidade na camada de NiFe presa em 27, com um aumento acentuado (acima do previsto) para a amostra com 25. Este aumento acima do previsto corrobora com nossa hipótese. As simulações das curvas de histerese da magnetorresistência não foram muito bons, indicando que melhorias devem ser introduzidas no modelo utilizado para a simulação da histerese da magnetorresistência, obtidos a partir dos ângulos das camadas ferromagnéticas livre e presa. A questão referente a presença em algumas das amostras de um desalinhamento entre os eixos fácéis do FM e do AFM ainda é uma questão em aberta, mas neste trabalho foi encontrado que este ângulo é igual a 2. / Spin Valves have been employed as magnetic sensors and used in random access memories, showing they are very important in terms of technological point of view. In this work, analyses of the magnetoresistance first order reversal curves (MR-FORC) have been used, as well as fittings of the magnetization and magnetoresistance hysteresis, to study the exchange-bias phenomena, magnetic anisotropies and magnetoresistance in spin valves. Sputtering has been used to the deposition of NiFe/Cu/NiFe/IrMn, and Ta has been deposited as seed and buffer layers. A domain wall model (in the antiferromagnetic layer) taking into account the magnetic anisotropies and the interactions between the layers has been employed to fit the magnetization hysteresis. Some textures have been also introduced to take into account the ferromagnetic (FM) and antiferromagnetic (AFM) grains dispersion (with Gaussian distributions) centered around the respective uniaxial anisotropy axes. However, to obtain good fits for some samples, it has been necessary to include an in-plane rotation of an angle of the both FM and AFM easy axes in relation to the field direction applied during the growing of the films. Good fits of the magnetization hysteresis have been obtained for all measured directions of the applied field. A new method based on the angular variation of the magnetoresistance to constant fields has been proposed to extract directly these angles. Reasonable agreements have been obtained between these angles and the corresponding ones extracted from the fits of the magnetization loops. Through the analyses of the MR-FORC and from the simulations indicated by the parameters (obtained from the fittings of magnetization loops), a direct relation between the interaction fields (and its uncertainties) and the exchange-bias fields of the grains of the distribution (extracted from the simulations, using the width of the distribution obtained from the magnetization fittings) has been identified. In summary, this analysis has showed that this technique allows to extract comparative information about the dispersion of the anisotropy axes of the FM and AFM grains around the uniaxial axis, which can be very import to the characterization of spin-valve based sensors. Besides, MR-FORC analyses have also indicated the presence of a threshold of discontinuity of the pinned NiFe layer at 27, showing a huge increase (above of the expected) to the sample at 25, and this unexpected increasing has corroborated with our hypothese. Simulations of the magnetoresistance loops have not been good, indicating that improvements should be included in the model employed to simulate these curves, obtained from the pinned and free angles of the NiFe layers. Concerning the case of the presence of misalignments of FM and AFM for some samples, it is still an open question, but in this work, we have found that this angle () is equal to 2.
122

High pressure synthesis and neutron diffraction studies of new magnetic manganites

McNally, Graham Michael January 2018 (has links)
With the discovery of appreciable room temperature magnetoresistance (MR) in high Curie temperature (Tc) ferrimagnetic double perovskites such as Sr2FeMoO6, research surrounding other materials of this type has expanded. Most ferrimagnetic double perovskites of the formula A2BB'O6 have non-magnetic A-site cations, such as Sr2+, Ca2+ or Ba2+. Replacing non-magnetic cations with magnetic variants offers further possibilities to tune magnetic effects. This thesis focuses on the substitution of non-magnetic A-site cations with relatively small magnetic Mn2+ cations. This substitution is made possible through the use of high-pressure/temperature (P/T) synthesis, and the characterisation of structural and magnetic properties of new phases discovered through these syntheses. The first of these new phases to be reported herein is Mn2FeReO6, which can be described as the Mn analogue of the well-known ferrimagnetic double perovskite Ca2FeReO6. These materials are well ordered with Fe3+/Re5+ on B-sites and crystallise in a P21/n structure. Mn2FeReO6 shows a high Tc of 520 K due to ferrimagnetic Fe/Re magnetic order above RT, and a large saturated magnetisation of 5.0 μB, which peaks at 75 K. Interestingly, the A-site Mn2+ (3d5) magnetic order has the effect of causing a spin reorientation of the Fe/Re sublattice observed by neutron powder diffraction (NPD) at temperatures below ~75 K. This causes the MR to exhibit the expected negative intergrain tunnelling behaviour above the transition and colossal positive behaviour below. Also reported are a series of perovskite related structures with formulae CaxMn2- xFeReO6 (x = 0.5, 1.0, 1.5). Of particular note among these is CaMnFeReO6, which exhibits 1:1 A-site ordering of Ca/Mn and adopts the P42/n space group. This material belongs to a family of newly discovered 'double double' perovskites, in which Ca/Mn order in columns pointing along the c-axis and Mn has alternating tetrahedral and square planar coordination environments. MR in this material remains negative down to 20 K, potentially due to the presence of Ca disrupting magnetic interactions between Mn2+ cations and suppressing the spin transition. Alternating coordination environments in the double double perovskite structure type were exploited in the synthesis of Ca(Mn0.5Cu0.5)FeReO6. This material also crystallises in the P42/n structure and is well ordered on B-sites, as evidenced by X-ray powder diffraction. Neutron diffraction yields, in addition to columnar order, a slight preference for Cu to occupy the square planar sites and for Mn to occupy tetrahedral sites. This doping of square planar sites with Cu has the effect of enhancing magnetic properties compared to CaMnFeReO6, increasing the saturated magnetisation, raising the ferrimagnetic ordering temperature of the B-sites from 500 to 560 K, and also having a profound effect on the observed MR effects, as a switch in the sign of the MR is observed in this material through a magnetic transition. Finally, B-site substitution has been experimented with in the synthesis of CaMnMnReO6. This also possesses the combined A and B-site orders observed in CaMnFeReO6 and an unusual magnetic structure, with perpendicular A and B-site magnetism due to frustration, deviating greatly from the magnetic structures of materials with B-site Fe/Re. In summary, this thesis compiles the synthesis and analysis of a series of new double perovskites, double double perovskites and a new 'triple double' five-fold cation ordered structure with a general formula of AA'0.5A''0.5BB'O6. These materials show that new types of structural ordering can be used to increase the number of degrees of freedom available for tuning the interplay between many different magnetic cations in different coordination environments.
123

Tunelamento e transporte quântico em sistemas mesoscópicos : fundamentos e aplicações

Dartora, Cesar Augusto 30 March 2005 (has links)
Orientador: Guillermo Gerardo Cabrera Oyarzun / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-09-24T19:11:22Z (GMT). No. of bitstreams: 1 Dartora_CesarAugusto_D.pdf: 2101604 bytes, checksum: 3eb6940416ec56ede441909468db04be (MD5) Previous issue date: 2005 / Resumo: O interesse atual e crescente nos sistemas mesoscópicos se deve à miniaturização cada vez maior dos dispositivos eletrônicos e à produção de materiais com possibilidade de armazenar informação em altas densidades (Gbits e Terabits/pol 2 ). A Física Mesoscópica descreve fenômenos que ocorrem em uma escala de tamanhos intermediária entre o macroscópico e o microscópico. Esta região cinzenta permite interpolar entre o regime atômico-molecular e o limite macroscópico, dominado este último pelas propriedades de volume (bulk ), que são objetos usuais de estudo em Física da Matéria Condensada. Na escala de nanometros e dezenas de nanometros, os elétrons podem propagar-se sem sofrer espalhamento inelástico (regime balístico) e a fase da função de onda pode manter sua coerência em escala da ordem do tamanho do sistema, dando lugar aos típicos fenômenos de interferência quântica. Neste trabalho fazemos um estudo detalhado das propriedades de transporte quântico em sistemas mesoscópicos, onde as barreiras de tunelamento fazem parte de diversos dispositivos eletrônicos. Estes sistemas incluem barreiras isolantes entre eletrodos metálicos, nanocontatos metálicos e junções tipo Josephson entre supercondutores. As principais estruturas aqui estudadas são as junções magnéticas de tunelamento e os nanofios e nanocontatos ferromagnéticos. Em ambos o fenômeno da magnetorresistência gigante (GMR) está presente, porém as origens do fenômeno são diferentes. Em junções de tunelamento a GMR tem origem na densidade de estados dos elétrons de condução nos eletrôdos ferromagnéticos, entre os quais uma barreira isolante é colocada, bem como no tunelamento inelástico assistido por mágnons que surgem nas interfaces entre eletrodos e região isolante. Em nanocontatos e nanofios o fenômeno deve-se principalmente ao forte espalhamento de elétrons com dependência de spin na presença de paredes de domínio magnéticas / Abstract: The interest in mesoscopic systems has grown significantly due to the increasing miniaturization of electronic devices and the production of materials which makes possible to store information in higher densities (Gbits and Terabits/in 2 ). The Mesoscopic Physics describes phenomena that happen in an intermediary scale of sizes between the macroscopic and the microscopic world. This gray region allows to interpolate between the atomic-molecular regime and the macroscopic limit, the last one dominated by bulk properties which are the usual subject of Condensed Matter Physics. In the nanometer and tens of nanometers scale electrons can pro-pagate without suffering inelastic scattering (ballistic regime) and the phase of the wavefunction maintain its coherence in the scale of system¿s size, giving place to the typical phenomena of quantum interference. In this work a detailed study of quantum transport properties in mesoscopic systems, where the tunnelling barriers make part of many electronic devices, is done. These systems include insulating barriers between metallic electrodes, metallic nanocontacts and nanowires, and Josephson junctions between superconductors. The main structures here studied are magnetic tunnelling junctions and ferromag-netic nanowires and nanocontacts. In both cases the giant magnetoresistance phe-nomenon (GMR) is present, however the origins of it are quite different. In tun-neling junctions, where an insulating barrier is placed between two ferromagnetic electrodes, the GMR is due to both, density of states effects at the ferromagnetic elec-trodes, and inelastic tunneling from magnons at the interface regions. In nanowires and nanocontacts the transport is strongly in uenced by spin-dependent scattering in the presence of magnetic domain walls / Doutorado / Física da Matéria Condensada / Doutor em Ciências
124

Magneto-Resistência em Altos e Baixos Campos Magnéticos em Supercondutores Granulares / Magnetoresistance at low and high magnetic fields for granular superconductors

Maria José Ramos Sandim 27 August 1999 (has links)
Neste trabalho foram realizadas medidas de transporte em campos magnéticos aplicados no intervalo 0 H 18 T em supercondutores granulares Sm2-xCexCuO4-y, x = 0.17 e 0.18, constituídos de ilhas supercondutoras embutidas em uma matriz isolante e pertencentes a uma transição do tipo supercondutor-isolante (SI). Amostras que apresentam coerência de fase supercondutora via acoplamento Josephson em temperaturas abaixo de TcJ mostraram ser sensíveis a aplicação de baixos campos magnéticos (0 < H 200 Oe) e os resultados de magneto-resistência R(T,H) permitiram concluir que 0 movimento de vórtices de Josephson e governado por uma energia de ativação intergranular do tipo UJ(T,H) (l-T/TeJ)(H-o.6). Foi ainda observado que a supressão da fase do parâmetro de ordem supercondutor ocorre preferencialmente nos contornos de grão nesses supercondutores granulares. Nas amostras constituídas de ilhas supercondutoras isoladas e pertencentes ao lado dielétrico de uma transição SI, observou-se urn aumento abrupto na resistência elétrica R(T,H = 0) abaixo da temperatura critica supercondutora Tci. A aplicação de campos magnéticos intensos promove a supressão da amplitude do parâmetro de ordem supercondutor e resulta em uma magneto-resistência negativa em T < Tci. Uma análise quantitativa do excesso de resistência elétrica R em T < Tci revela que em 0.6 (T/Tci) 1, R (T/Tci)-4 como previsto pela teoria semi-fenomenológica de dois-fluidos. Em temperaturas (T/Tci) < 0.6, as medidas de magneto-transporte mostraram ser sensíveis a alterações provocadas pela aplicação de campo magnético na rede de vórtices das ilhas supercondutoras. Estas alterações são discutidas dentro do cenário de óxidos supercondutores que apresentam alta anisotropia. / We have performed transport measurements in applied magnetic fields as high as 18 T on granular superconductors of Sm2-xCexCuO4-y; x = 0.17, 0.18. These materials are comprised of small superconducting islands embedeed in a non-superconducting host and belong to a superconductorinsulator transition (SI). Transport properties of samples which show longrange phase ordering through Josephson coupling below a given temperature Tci are very sensitive to applied magnetic fields as low as 200 Oe. The results of magnetoresistance R(T,H) enabled us to conclude that dissipation due to Josephson flux flow is governed by an intergranular activation energy given by UJ(T,H) (1-T/Tcj)(H-0,6). We have also observed that the phase of the superconducting order parameter is depressed at intergranular regions or more appropriately at the grain boundaries in these granular materials. In samples that superconducting islands are essentially isolated, an abrupt increase of the electrical resistance R(T,H) below the superconducting transition temperature Tci occurs. The application of high magnetic fields suppresses the amplitude of the superconducting order parameter and an appreciable magnetoresistance below Tci is observed. A quantitative analysis of the excess of the electrical resistance R below Tci reveals that R (T/Tci)-4 ; 0.6 (T/Tci) 1; as predicted by the semi-phenomenological two-fluid theory of superconductivity. At temperatures (T/Tci) < 0.6 and under high applied magnetic fields, transport measurements showed to be very sensitive to changes in the dissipation of the vortex lattice of the isolated superconducting islands. These changes are discussed within a scenario of high anisotropic layered superconductors.
125

Effect of spacer in transport and diffusion properties of colossal magnetoresistance multilayers. / 間層對龐磁阻多層薄膜的傳導與擴散特性的影響 / Effect of spacer in transport and diffusion properties of colossal magnetoresistance multilayers. / Jian ceng dui pang ci zu duo ceng bo mo de zhuan dao yu kuo san te xing de ying xiang

January 2007 (has links)
Huang, Chun Fuk = 間層對龐磁阻多層薄膜的傳導與擴散特性的影響 / 黃真福. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2007. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / Huang, Chun Fuk = Jian ceng dui pang ci zu duo ceng bo mo de chuan dao yu kuo san te xing de ying xiang / Huang Zhenfu. / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Magnetoresistance --- p.1 / Chapter 1.1.1 --- Giant magnetoresistance (GMR) --- p.3 / Chapter 1.1.2 --- Colossal magnetoresistance (CMR) --- p.5 / Chapter 1.1.3 --- Double exchange mechanism --- p.6 / Chapter 1.1.4 --- Jahn-Teller effect --- p.10 / Chapter 1.1.5 --- Tolerance factor --- p.12 / Chapter 1.1.6 --- Effect of Doping --- p.14 / Chapter 1.1.7 --- Charge-ordering effect --- p.16 / Chapter 1.1.8 --- Phase separation and percolation theory --- p.17 / Chapter 1.2 --- Our motivation --- p.18 / Chapter 1.3 --- Review of manganite multilayer system --- p.20 / Chapter 1.4 --- Scope of this thesis --- p.21 / References --- p.22 / Chapter Chapter 2 --- Instrumentation / Chapter 2.1 --- Thin film deposition --- p.24 / Chapter 2.1.1 --- Facing-target sputtering (FTS) --- p.24 / Chapter 2.1.2 --- Vacuum system --- p.26 / Chapter 2.2 --- Oxygen annealing system --- p.28 / Chapter 2.3 --- Characterization --- p.30 / Chapter 2.3.1 --- α-step profilometer --- p.30 / Chapter 2.3.2 --- X-ray diffraction (XRD) --- p.30 / Chapter 2.3.3 --- Resistance measurement --- p.32 / References --- p.34 / Chapter Chapter 3 --- Epitaxial growth of LCMO and LSMO single layer thin films / Chapter 3.1 --- Fabrication and characterization of LCMO and LSMO targets --- p.35 / Chapter 3.2 --- Epitaxial growth of LCMO and LSMO thin films --- p.41 / Chapter 3.2.1 --- Substrate materials --- p.41 / Chapter 3.2.2 --- Deposition conditions --- p.42 / Chapter 3.2.3 --- Deposition procedures --- p.44 / Chapter 3.3 --- Characterization of single layer films --- p.45 / References --- p.50 / Chapter Chapter 4 --- Lao.67Ca0.33MnO3/La0.4Ca0.6MO3 multilayers and La0.67Ca0.33MnO3 /La0.2̐ơإSr0.75MnO3 multilayers / Chapter 4.1 --- Sample preparation --- p.51 / Chapter 4.2 --- As-grown multilayers --- p.53 / Chapter 4.2.1 --- Structural characterization of as-grown samples --- p.53 / Chapter 4.2.2 --- Transport properties of as-grown samples --- p.59 / Chapter 4.3 --- Oxygen post annealing of multilayer thin films --- p.68 / Chapter 4.3.1 --- Introduction to post annealing of manganite oxides --- p.68 / Chapter 4.3.2 --- Oxygen post annealing conditions --- p.69 / Chapter 4.4 --- Results and discussion of oxygen post-annealing samples --- p.71 / Chapter 4.4.1 --- Structural characterization of oxygen post-annealing samples --- p.71 / Chapter 4.1.1.1 --- Effect of chemical composition --- p.71 / Chapter 4.4.1.2 --- Effect of relative thickness --- p.73 / Chapter 4.4.2 --- Transport properties of oxygen post-annealing samples --- p.84 / References --- p.95 / Chapter Chapter 5 --- Conclusion --- p.97
126

Magneto-Resistência em Altos e Baixos Campos Magnéticos em Supercondutores Granulares / Magnetoresistance at low and high magnetic fields for granular superconductors

Sandim, Maria José Ramos 27 August 1999 (has links)
Neste trabalho foram realizadas medidas de transporte em campos magnéticos aplicados no intervalo 0 H 18 T em supercondutores granulares Sm2-xCexCuO4-y, x = 0.17 e 0.18, constituídos de ilhas supercondutoras embutidas em uma matriz isolante e pertencentes a uma transição do tipo supercondutor-isolante (SI). Amostras que apresentam coerência de fase supercondutora via acoplamento Josephson em temperaturas abaixo de TcJ mostraram ser sensíveis a aplicação de baixos campos magnéticos (0 < H 200 Oe) e os resultados de magneto-resistência R(T,H) permitiram concluir que 0 movimento de vórtices de Josephson e governado por uma energia de ativação intergranular do tipo UJ(T,H) (l-T/TeJ)(H-o.6). Foi ainda observado que a supressão da fase do parâmetro de ordem supercondutor ocorre preferencialmente nos contornos de grão nesses supercondutores granulares. Nas amostras constituídas de ilhas supercondutoras isoladas e pertencentes ao lado dielétrico de uma transição SI, observou-se urn aumento abrupto na resistência elétrica R(T,H = 0) abaixo da temperatura critica supercondutora Tci. A aplicação de campos magnéticos intensos promove a supressão da amplitude do parâmetro de ordem supercondutor e resulta em uma magneto-resistência negativa em T < Tci. Uma análise quantitativa do excesso de resistência elétrica R em T < Tci revela que em 0.6 (T/Tci) 1, R (T/Tci)-4 como previsto pela teoria semi-fenomenológica de dois-fluidos. Em temperaturas (T/Tci) < 0.6, as medidas de magneto-transporte mostraram ser sensíveis a alterações provocadas pela aplicação de campo magnético na rede de vórtices das ilhas supercondutoras. Estas alterações são discutidas dentro do cenário de óxidos supercondutores que apresentam alta anisotropia. / We have performed transport measurements in applied magnetic fields as high as 18 T on granular superconductors of Sm2-xCexCuO4-y; x = 0.17, 0.18. These materials are comprised of small superconducting islands embedeed in a non-superconducting host and belong to a superconductorinsulator transition (SI). Transport properties of samples which show longrange phase ordering through Josephson coupling below a given temperature Tci are very sensitive to applied magnetic fields as low as 200 Oe. The results of magnetoresistance R(T,H) enabled us to conclude that dissipation due to Josephson flux flow is governed by an intergranular activation energy given by UJ(T,H) (1-T/Tcj)(H-0,6). We have also observed that the phase of the superconducting order parameter is depressed at intergranular regions or more appropriately at the grain boundaries in these granular materials. In samples that superconducting islands are essentially isolated, an abrupt increase of the electrical resistance R(T,H) below the superconducting transition temperature Tci occurs. The application of high magnetic fields suppresses the amplitude of the superconducting order parameter and an appreciable magnetoresistance below Tci is observed. A quantitative analysis of the excess of the electrical resistance R below Tci reveals that R (T/Tci)-4 ; 0.6 (T/Tci) 1; as predicted by the semi-phenomenological two-fluid theory of superconductivity. At temperatures (T/Tci) < 0.6 and under high applied magnetic fields, transport measurements showed to be very sensitive to changes in the dissipation of the vortex lattice of the isolated superconducting islands. These changes are discussed within a scenario of high anisotropic layered superconductors.
127

The conductivity, dielectric constant, magnetoresistivity, 1/f noise and thermoelectric power in percolating randomgraphite-- hexagonal boronnitride composites

Wu, Junjie 23 January 1997 (has links)
ii ABSTRACT Percolation phenomena involving the electrical conductivity, dielectric constant, Hall coefficient, magnetoconductivity, relative magnetoresistivity, 1/ f noise and thermoelectric power are investigated in graphite (G) and hexagonal boron-nitride (BN) powder mixtures. Two kinds of systems are used in the experiments: highly compressed discs and parallelepipeds, cut from these discs, as well as 50%G-50%BN and 55%G-45%BN powder mixtures undergoing compression. The measured DC conductivities follow the power-laws 0"( <p, 0) ex: (<p-<Pc)t (<p > <Pc) and O"(<p, 0) ex: (<Pc-<Pti (<p < <Pc), and the low frequency (lOOHz & 1000Hz) dielectric constant varies as c( <p, W ~ 0) ex: (<Pc - <P )-S( <P < <Pc), where <Pc is the percolation threshold, t and s are the conductivity exponents, and s is the dielectric exponent. Near the percolation threshold and at high frequencies, the AC conductivity varies with frequency as 0"( <p, w) ex: WX and the AC dielectric constant varies as c( <p, w) ex: w-Y, where the exponents x and y satisfy the scaling relation x + y = 1. The crossover frequency We scales with DC conductivity as Wc ex: O"q( <p, 0) (<p > <Pc), while on the insulating side, Wc ~ 1, resulting in q ~O for the three G-BN systems. The loss tangent tan t5( <p, w) (<p < <Pc) is found to have a global minimum, in contrary to the results of computer simulations. The Hall constant could not be measured using existing instrumentation. The measured magnetoconductivity and relative magnetoresistivity follow the power-laws - 6. 0" ex: (<p - <Pc)3.08 and 6.R/ R ex: (<p - <Pc)O.28 respectively. These two exponents, iii 3.08 and 0.28, are not in agreement with theory. The 1/ f noise was measured for the conducting discs and parallelepipeds. The normalized 1/ f noise power varies as Sv I V2 ex RW with the exponents w = 1.47 and 1.72 for the disc and parallelepiped samples respectively. Furthermore, the normalized noise power near the percolation threshold is, for the first time, observed to vary inversely with the square-root of sample volume. Based on the Milgrom-Shtrikman-Bergman-Levy (MSBL) formula, thermoelectric power of a binary composite is shown to be a linear function of the WiedemanFranz ratio. A scaling scheme for the Wiedeman-Franz ratio for percolation systems is proposed, which yields power-law behavior for the thermoelectric power. The proposed power-laws for the thermoelectric power can be written as (Sm - Md ex (<p - <Pc)h 1 for <P > <Pc and as (Sm - /~1d ex (<Pc - <p)-h2 for <p < <Pc, where Sm is the thermoelectric power for the composites, Afl is a constant for a given percolation system, and hI and h2 are the two critical exponents. The experimental thermoelectric power data for the G-BN conducting parallelepipeds was fitted to the above powerlaw for <p > <Pc. A least squares fit yielded the exponent hI = -1.13 and parameter MI =9.511l V I I< respectively.
128

Spin Seebeck effect and related phenomena in functional magnetic oxides

Kalappattil, Vijaysankar 06 April 2018 (has links)
In recent years, Spin Seebeck effect (SSE) emerges as one of the efficient and easiest ways to generate pure spin current for spintronics devices. In this dissertation, we have systematically studied the SSE and related phenomena like spin Hall magneto-resistance (SMR), anomalous Nernst effect (ANE) in functional magnetic oxides for both fundamental understanding of their origins and practical ways to apply into technological devices. The research has been performed on three different systems of topical interest: (i) Y3Fe5O12 (YIG)/Pt and YIG/C60/Pt, (ii) CoFe2O4 (CFO)/Pt and CFO/C60/Pt, and (iii) Nd0.6Sr0.4MnO3 (NSMO). In case of the YIG/Pt structure, we have achieved a new consensus regarding the temperature dependence of the longitudinal SSE (LSSE). For the first time, we have demonstrated the temperature dependence of LSSE in association with the magnetocrystalline anisotropy (HK) and surface perpendicular magnetic anisotropy field (HKS) of YIG in the same YIG/Pt system. We show that on lowering temperature, the sharp drop in LSSE signal (VLSSE) and the sudden increases in HK and HKS at ~175 K are associated with the spin reorientation due to single ion anisotropy of Fe2+ ions. The VLSSE peak at ~75 K is attributed to the HKS and MS (saturation magnetization) whose peaks also occur at the same temperature. The effects of surface and bulk magnetic anisotropies are corroborated with those of thermally excited magnon number and magnon propagation length to satisfactorily explain the temperature dependence of LSSE in the Pt/YIG system. As a new way to reduce conductivity mismatch, promote spin transport, and tune the spin mixing conductance (G) at the YIG/Pt interface, we have deposited an organic semiconductor (OSC), C60, between ferrimagnetic material (FM) and Pt. Transverse susceptibility study on YIG/C60/Pt has shown that the deposition of C60 has reduced HKS at the surface of YIG significantly, due to the hybridization between the dz2 orbital in Fe and C atoms, leading to the overall increase in spin moments and G and consequently the LSSE. Upon lowering temperature from 300 K, we have observed an exponential increase in LSSE at low temperature (a ~800% increment at 150 K) in this system, which is attributed to the exponential increase in the spin diffusion length of C60 at low temperature. On the other hand, similar experiments on CoFe2O4 (CFO)/C60/Pt show a reduction in the LSSE signal at room temperature, due to the hybridization between the dz2 orbital in Co and C atoms that results in the increased magnetic anisotropy. Upon decreasing the temperature below 150 K, we have interestingly observed that LSSE signal from CFO/C60/Pt exceeds that of CFO/Pt and increases remarkably with temperature. This finding confirms the important role played by the spin diffusion length of C60 in enhancing the LSSE. A systematic study of SMR, SSE, and HKS on the YIG/Pt system using the same YIG single crystal has revealed a low-temperature peak at the same temperature (~75 K) for all the phenomena. Given the distinct origins of the SSE and SMR, our observation points to the difference in spin states between the bulk and surface of YIG as the main reason for such a low-temperature peak, and suggests that the ‘magnon phonon drag’ theory developed to explain the temperature-dependent SSE behavior should be adjusted to include this important effect. SSE and ANE studies on NSMO films have revealed the dominance of ANE over SSE in this class of perovskite-structured materials. The substrate-dependent study of the films shows that compressive strain developed due to the large lattice mismatch from LAO gives rise to the enhanced ANE signal. On the same substrate, ANE signal strength increases as the thickness increases. A sign change in ANE has been observed at a particular temperature, which explains that the Anomalous Hall effect (AHE) and ANE in these systems arise due to intrinsic scattering mechanisms. Overall, we have performed the SSE and related studies on the three important classes of functional magnetic oxide materials. We demonstrate the important role of magnetic anisotropy in manipulating the SSE in these systems. With this knowledge, we have been able to design the novel YIG/C60/Pt and CFO/C60/Pt heterostructures that exhibit the giant SSEs. The organic semiconductor C60 has been explored for the first time as a means of controlling pure spin current in inorganic magnetic oxide/metal heterostructures, paying the way for future spintronic materials and devices.
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Elaboration et caractérisation des propriétés magnétiques et de transport de films et multicouches à base de GdCo et de multicouches Fe/Cr

Thanh Nam, Nguyen 05 November 2007 (has links) (PDF)
Cette thèse en cotutelle entre l'Université Joseph Fourier à Grenoble et l'Université Nationale du Vietnam à Hanoi traite de l'étude des propriétés magnétiques et électriques de structures basées sur GdCo et sur des multicouches Fe/Cr. GdCo est un alliage ferrimagnétique dont la composition peut être choisie afin d'obtenir la compensation, c'est à dire une aimantation nette nulle, à une température de compensation inférieure à la température de Curie. Les films ont été déposés par la technique de pulvérisation cathodique magnétron. Ils sont amorphes et possèdent une anisotropie perpendiculaire induite par la croissance. Proche de la température de compensation, l'aimantation spontanée est perpendiculaire et l'imagerie par effet Kerr polaire ainsi que l'effet Hall extraordinaire ont été largement utilisés pour étudier les films dans la gamme (4-300 K) et de 0 à 6 Tesla. Un gradient de composition dans le plan peut être induit et a entrainé l'étude d'une paroi de compensation d'aimantation nulle. Les contributions de Gd et Co à l'effet Hall extraordinaire ont été déterminées. Proche de la compensation, l'effet Hall à haut champ permet d'accéder au régime de spin flop. Des multicouches GdCo/Cu/NiFe pour lesquelles GdCo est à anisotropie perpendiculaire et NiFe à anisotropie planaire ont été élaborées. Elles présentent de la magnétorésistance géante (GMR) dont la valeur ne dépend pas de l'angle entre les aimantations nettes desdeux couches magnétiques. <br /> L'étude de la GMR des multicouches Fe/Cr traite de la contribution des interfaces au mécanisme GMR. En variant l'épaisseur du fer et en recuisant les multicouches, il est possible d'accéder aux contributions d'interface.
130

Renversement d' aimantation par injection d' un courant polarise en spin

Grollier, Julie 15 October 2003 (has links) (PDF)
Cette thèse est consacrée à l'étude expérimentale du phénomène de transfert de spin. Ce mécanisme, introduit théoriquement en 1996 par J. Slonczewski, permet d'orienter l'aimantation d'un matériau ferromagnétique sans champ appliqué, mais seulement par injection d'un courant polarisé en spin et transfert de spin vers le matériau considéré. Les fortes densités de courant à injecter pour observer l'effet, de l'ordre de 107 A.cm-2, imposent le recours à des nanostructures. Nous avons suivi deux voies pour caractériser cet effet nouveau de transfert de spin depuis un courant vers une aimantation. D'une part, à l'instar des tout premiers résultats expérimentaux obtenus à Cornell University en 2000, nous avons étudié cet effet dans des piliers magnétiques submicroniques de Co/Cu/Co. Nous avons pu clairement mettre en évidence le renversement d'aimantation par un courant polarisé en spin a champ nul. Ensuite, nous nous sommes intéressés à la dépendance en champ des courants critiques. Cette étude approfondie nous a permis de tracer le diagramme de phase champ-courant, nous fournissant des informations importantes quant aux mécanismes microscopiques à l'origine du phénomène de renversement d'aimantation par injection de spin. La deuxième partie de ma thèse concerne le cas des barreaux de vanne de spin Co/Cu/NiFe dans lesquels la modification d'aimantation est due au déplacement de paroi magnétique induit par transfert de spin à partir d'un courant polarisé en spin. Pour des champs proche de zéro, une paroi magnétique peut être déplacée uniquement sous l'action du courant entre des centres de piégeage et, en accord avec les conclusions du modèle de Berger, le déplacement s'effectue dans des directions opposées pour des courants opposés. La densité de courant critique requise pour déplacer la paroi est de l'ordre de quelques 106 A/cm², un ordre de grandeur plus faible que les courants nécessaires pour entraîner un renversement d'aimantation dans les structures multicouches de type piliers. Ces mesures constituent la première mise en évidence directe et en temps réel de déplacement de parois par transfert de spin dans des nanostructures magnétiques.

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