In dieser Arbeit werden magnetische Vortex-Dreifachlagen-Systeme untersucht. Mittels Magnetfeld, Strom und Röntgenzirkulardichroismus kann erstmals die magnetische Konfiguration der Vortexlagen mit dem simultan gemessenen Magnetowiderstand verglichen werden. Die senkrecht mit Strom durchflossenen Kobalt-Kupfer-Permalloy Scheiben werden in einem Mehrschrittprozess mittels Elektronenstrahllithographie auf einer Membran hergestellt, um mit Rastertransmissions-Röntgenmikroskopie untersuchbar zu sein. Die Auswertung der STXM-Bilder zeigt das gleiche Verhalten wie die Widerstandsmessungen und erlaubt eine eindeutige Zuordnung. Um auch die kleinsten scheibenförmigen Dreifachlagensysteme mittels ferromagnetischer Resonanz zu messen, wurde die Mikroresonator FMR optimiert. Damit können bereits etwa 2.3*10^7 Kobaltatome gemessen werden, wobei die Empfindlichkeit bis zu 4*10^6 Atomen ausreichend sein sollte. Durch 6-fache Mittelung lässt sich ein Kobaltwürfel mit einer Kantenlänge von 12,5nm detektieren. Dabei sind nicht nur die uniforme Mode, sondern auch lokal angeregte Moden sichtbar. Mittels mikromagnetischer Simulationen lassen sich den Resonanzen Modenbilder zuordnen. Die scheibenförmige Dreifachlage wird mit den FMR-Messungen sowohl mit verringertem Durchmesser, als auch mit reduzierter Zwischenschicht untersucht.

Junções túnel com eletrodos ferromagnéticos (Py/AlOx/Co) foram produzidas usando a técnica de desbastamento iônico e depositadas sobre condições de oxidação que garantem baixa altura da barreira de potencial, baixa assimetria da barreira, forte dependência da magnetorresistência túnel com a tensão aplicada e o tunelamento quântico como mecanismo de transporte eletrônico. As amostras foram produzidas com o objetivo de corroborar um modelo recentemente publicado e que prevê inversão da magnetorresistência túnel com a tensão aplicada devido à baixa altura do potencial da barreira. As medidas de magneto-transporte eletrônico (resistência de tunelamento em função do campo magnético aplicado) mostram uma inversão da magnetorresistência túnel com a tensão aplicada para temperatura constante de 77 K. O sistema (Py/AlOx/Co) é bem conhecido por apresentar magnetorresistência positiva onde a altura da barreira de potencial é geralmente igual ou maior a 2,0 eV (Moodera et al. 1995 e Boeve et al. 2000). Esta inversão não foi anteriormente reportada e se deve preferencialmente à baixa altura do potencial da barreira e à forte dependência com a tensão aplicada. A explicação física para a inversão é baseada no fator de coerência quântica, D(Ex , V), como previsto por Li et al. (2004a,b) e Ren et al. (2005) para a região de tensão intermediária. Ajustes às curvas I-V, medidas a temperatura ambiente, com os modelos de Simmons (1963b,c), Simmons (1964) e Chow (1965) mostram valores menores que os reportados anteriormente para a altura do potencial da barreira (≈ 1,0 eV) e barreiras com baixa assimetria (≈ 0,2 eV). Também, as curvas I-V para temperatura ambiente e baixa temperatura, as curvas I-T para tensão constante e o crescimento exponencial da resistência de tunelamento em função da espessura efetiva da barreira mostram que o tunelamento quântico é um mecanismo de transporte eletrônico. Este resultado sugere a possibilidade de constatar o aparecimento de áreas efetivas de tunelamento e indicando a presença de uma distribuição não uniforme da corrente de tunelamento. O efeito combinado da baixa altura da barreira de potencial, da baixa assimetria da barreira, da forte dependência da magnetorresistência túnel com a tensão aplicada e do tunelamento quântico como mecanismo de transporte eletrônico possibilitaram não somente a inversão da magnetorresistência túnel com a tensão aplicada, mas também o crescimento exponencial da resistência de tunelamento em função da espessura efetiva da barreira. / Tunneling junctions with ferromagnetic electrodes (Py/AlOx/Co) were produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier, strong tunneling magnetoresistance dependence with applied bias and quantum tunneling as the charge transport mechanism. The samples were deposited to verify a recently published model which predicts tunneling magnetoresistance inversion with applied bias due to low enough potential barrier height. Electronic transport measurements (tunneling resistance as a function of the applied magnetic field) show inverse (negative) tunneling magnetoresistance with applied bias at 77 K. Tunneling junctions of (Py/AlOx/Co) are well known positive magnetoresistance system where the potential barrier height is usually equal or higher than 2.0 eV (Moodera et al., 1995 e Boeve et al., 2000). This inverted tunneling magnetoresistance behavior has not been reported before and is due mainly to the low potential barrier height and the strong bias dependence The physical explanation for the inversion is based on the quantum coherence factor, D(Ex , V), following the Li et al. (2004ab) and Ren et al. (2005) model for intermediate voltage range. Room temperature I-V curves fitted with both Simmons’ (1963b,c), Simmons’ (1964) and Chow’s (1965) models showed potential barrier height values (≈ 1.0 eV), lower than those previously reported, and low asymmetry of the barrier (≈ 0.2 eV). Also, I-V curves for room and low temperature, I-T curves for constant applied bias and the exponential growth of the tunneling resistance as a function of the effective barrier thickness showed quantum tunneling as the charge transport mechanism. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution. The combined effect of low potential barrier height, low barrier asymmetry, strong tunneling magnetoresistance dependence with applied bias and quantum tunneling as the charge transport mechanism allowed not only the tunneling magnetoresistance inversion with applied bias but also, the exponential growth of the tunneling resistance as a function of the effective barrier thickness.

The physics of two-phase systems is explored here, particularly magneto-transport and low temperature d.c. conductivity in thin films. The extraordinary magnetoresistance (EMR) effect was analysed in the context of previous experimental and theoretical considerations. The magnetoresistance (MR) may be enhanced by up to two orders of magnitude by changing the geometry. This was investigated using finite element analysis. Thin film samples consisting of a layered structure of Germanium-Tin-Germanium (Ge-Sn-Ge) were created in collaboration with Shandong University in China. Ge layers were kept at a constant thickness across all samples, with variable Sn thickness. Regions of Sn form island-like shapes ten times larger than the average film thickness, as is seen in scanning electron microscope (SEM) images. Raman spectroscopy was conducted on these samples, from which it is concluded that the Ge layers are amorphous in nature. It was seen that there is a relationship between the electrical resistance and the film thickness which is indicative of a metal-insulator transition (MIT). The temperature dependence of resistivity was subsequently investigated. The temperature coefficient of resistivity (TCR) of the samples is seen to become negative as the thickness of the Sn layer is reduced below a certain critical thickness. Depending on their thickness, samples were designated as metallic or insulator, and various models associated with metals and insulators fitted to the data. While it is impossible to be absolutely certain of the validity of each of the models, some are a better fit than others. The same temperature dependence of resistivity was measured with an applied magnetic field. This is compared with the previous EMR investigation, however the MR of the samples is only of the order of a few percent which corresponds to ordinary MR, seen in most metals. The magnetic field measurements suppress a resistivity down-turn at very low temperatures (T < 10K) which suggests the presence of superconductivity. Analysis of dr=dT shows that the onset of superconductivity is lower for samples with a lower Sn thickness. Additionally, the deposition rate of the Sn layer affects the resistivity significantly; a higher deposition rate causes a decrease in resistivity. It is supposed that this is due to a change in the microstructure of the film. Finally, piezo-resistivity was considered by applying mechanical compression to the samples. The added pressure causes a drop in resistivity.

xxv, 207 p. ; ill. (some col.) A print copy of this title is available from the UO Libraries, under the call number: SCIENCE QD172.T6 T87 2008 / A growing interest in the physics of complex systems such as in the transition-metal oxide family has exploded recently, especially in the last 20 years or so. One notable effect is the change in electrical resistivity of a system by orders of magnitude in an applied magnetic field, coined the "colossal magnetoresistance effect". In efforts to understand these types of effects, there has been an unveiling of a rich variety of phenomena in the field of strongly correlated electron physics that has come to dominate the current scientific times. Most notable is the competition of myriad types of order: magnetic, lattice, charge and orbital all self-organize to display a fascinating array of phases on a variety of length scales. Furthermore, it has become apparent that new probes are needed to grasp some of this physics that transcends current condensed matter theory, where much of the behavior of these types of systems has remained unexplored. We have developed a new technique to gain more information about the system than with conventional x-ray diffraction. By scattering highly coherent, low energy x-rays, we can measure manganite speckle: a "fingerprint' of the microscopic structure in the bulk. The coherence of the x-rays can further be used to elucidate new insight into the dynamics of these phases. We describe here a number of novel effects near the orbital order phase transition in a half-doped manganite. We observe a small fluctuating component in the scattered signal that is correlated with three effects: both a rapidly decreasing total signal and orbital domain size, as well as an abrupt onset of a broad background intensity that we attribute to the thermal production of correlated polarons. Our results suggest that the transition is characterized by a competition between a pinned orbital domain topology that remains static, and mobile domain boundaries that exhibit slow, spatiotemporal fluctuations. This study opens up a new chapter to the study of manganite physics as coherent x-ray scattering offers a new direction to understand the strange and exotic behavior demonstrated in the multifaceted manganites. / Adviser: Stephen Kevan

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / In this work a study of the exchange interaction between ferromagnetic (NiFe) and antiferromagnetic (IrMn) layers was done through structural, magnetic and electric characterization. NiFe/IrMn/Ta films were grown with different number of repetitions of this basic structure aiming to evaluate possible changes on the magnetic anisotropies presented by the samples. It was implanted in the Laboratório de Magnetismo e Materiais Magnéticos a system in order to measure the Anisotropic Magnetorresistance (AMR) as function of the applied field angle. The AMR consists in a change of the eletric resistance of a ferromagnetic material as function of the angle between the electric current and the magnetization of the material and, by this way, sensible to changes in the anisotropy presented by the samples. It is presented a simple model to calculate the AMR as function of the angle field and, by comparing with the experimental curves, to obtain the magnetic parameters who describe the system. In the model the equilibrium direction of the magnetization is obtained from the minimization of the free magnetic energy, which is given by the Zeeman, uniaxial, unidirectional and manetostatic energies. The AMR curves present an assymetry around 180 degrees when measured at fields below the bias one. According to the fittings, it was found that such assymetry can be due by a misalignment between the anisotropy axis (uniaxial and unidirectional) or by a misalignment between the measuring current and the easy magnetic axis of the samples. It was not observed, as expected, an expressive increase of the anisotropy dispersion of the uniaxial anisotropy with the increase of the number of trilayers. The same was observed with the bias and coercive fields. / Neste trabalho, o estudo da interação de troca entre as camadas ferromagnética (NiFe) e antiferromagnética (IrMn) em multicamadas foi realizado através da caracterização estrutural, magnética e de transporte elétrico. Foram crescidos filmes de NiFe/IrMn/Ta com diferentes números de repetições dessa estrutura básica com o objetivo de avaliar as possíveis modificações nas anisotropias apresentadas pelas amostras. Foi implantado no Laboratório de Magnetismo e Materiais Magnéticos (LMMM) um sistema para medidas de Magnetorresistência Anisotrópica (AMR) em função do ângulo de aplicação do campo. A AMR consiste na variação da resistência elétrica e a magnetização do material e, portanto, sensível as modificações de anisotropia nas amostras. É apresentado um modelo simples para calcular as curvas de AMR em função do ângulo do campo e, na comparação com as curvas experimentais obter os parâmetros magnéticos que descrevem o sistema. No modelo, a direção de equilíbrio da magnetização é obtida a partir da minimização da energia livre magnética, que por sua vez é dada pela soma da energia Zeeman, uniaxial, unidirecional e magnetostática. As curvas de AMR apresentam uma assimetria em torno de 180 graus quando medidas em valores de campo menores que o campo de Bias. De acordo com os ajustes, foi verificado que esta assimetria pode ser causada tanto por um desalinhamento entre os eixos de anisotropias (uniaxial ou unidirecional) como por um desalinhamento entre o eixo da corrente de medição e o eixo de fácil magnetização da amostra. Não foi observado, conforme esperado, um aumento expressivo na dispersão da anisotropia uniaxial com o aumento do número de repetições das tricamadas. O mesmo ocorrendo com os valores dos campos de Bias e coercivo.

abstract: A theoretical study of a three-dimensional (3D) N/S interface with arbitrary spin polarization and interface geometry is presented. The 3D model gives the same intrinsic spin polarization and superconducting gap dependence as the 1D model. This demonstrates that the 1D model can be use to t 3D data. Using this model, a Heusler alloy is investigated. Andreev reflection measurements show that the spin polarization is 80% in samples sputtered on unheated MgO(100) substrates and annealed at high temperatures. However, the spin polarization is considerably smaller in samples deposited on heated substrates. Ferromagnetic FexSi􀀀x alloys have been proposed as potential spin injectors into silicon with a substantial spin polarization. Andreev Reflection Spectroscopy (ARS) is utilized to determine the spin polarization of both amorphous and crystalline Fe65Si35 alloys. The amorphous phase has a significantly higher spin polarization than that of the crystalline phase. In this thesis, (1111) Fe SmO0:82F0:18FeAs and Pb superconductors are used to measure the spin polarization of a highly spin-polarized material, La0:67Sr0:33MnO3. Both materials yield the same intrinsic spin polarization, therefore, Fe-superconductors can be used in ARS. Based on the behavior of the differential conductance for highly spin polarized LSMO and small polarization of Au, it can be concluded that the Fe-Sc is not a triplet superconductor. Zero bias anomaly (ZBA), in point contact Andreev reflection (PCAR), has been utilized as a characteristic feature to reveal many novel physics. Complexities at a normal metal/superconducting interface often cause nonessential ZBA-like features, which may be mistaken as ZBA. In this work, it is shown that an extrinsic ZBA, which is due to the contact resistance, cannot be suppressed by a highly spin-polarized current while a nonessential ZBA cannot be affected the contact resistance. Finally, Cu/Cu multilayer GMR structures were fabricated and the GMR% measured at 300 K and 4.5 K gave responses of 63% and 115% respectively. Not only do the GMR structures have a large enhancement of resistance, but by applying an external magnetic eld it is shown that, unlike most materials, the spin polarization can be tuned to values of 0.386 to 0.415 from H = 0 kOe to H = 15 kOe. / Dissertation/Thesis / Doctoral Dissertation Physics 2015

abstract: Measurements of the geometrical magnetoresistance of a conventional semiconductor, gallium arsenide (GaAs), and a more recently developed semiconductor, iron pyrite (FeS2) were measured in the Corbino disc geometry as a function of magnetic field to determine the carrier mobility (μm). These results were compared with measurements of the Hall mobility (μH) made in the Van der Pauw configuration. The scattering coefficient (ξ), defined as the ratio between magnetoresistance and Hall mobility (μm/μH), was determined experimentally for GaAs and natural pyrite from 300 K to 4.2 K. The effect of contact resistance and heating on the measurement accuracy is discussed. / Dissertation/Thesis / Masters Thesis Materials Science and Engineering 2016

La thèse intitulée « Zeolites as key-components for electronics and biomedicine » traite de travaux sur des cristaux de zéolite-L avec des tailles et des formes différentes pour des applications dans les domaines de l’électronique et de la biomédecine. Il a été montré que, lorsque les monocouches de zéolites-L sont munies d’un biofilm, elles peuvent être utilisées comme des substrats pour une croissance de longue durée de neurones primaires. De plus, les pores des zéolites peuvent être remplies d’un spécial semi-conducteur organique, pour permettre un transport d’électrons à travers les canaux et, plus important, ces matériaux présentent une très haute magnétorésistance en y appliquant un champ magnétique externe. Enfin, les monocristaux de zéolites-L peuvent être utilisés en tant que plateforme pour un oligo-nucléotide multifonctionnel et l’administration d’un médicament-modèle à l’intérieur de cellules vivantes. Les oligo-nucléotides sont attachés aux particules de la surface externe et le médicament modèle est encapsulé dans les pores. Ces premières expériences-modèles confirment que ces systèmes offrent un grand potentiel dans le domaine de la thérapie génique. En résumé, cette thèse montre que les cristaux de zéolites-L peuvent être appliqués avec succès dans des domaines très variés, de l’électronique à la biomédecine. / The aim of this thesis titled “Zeolites as key-components for electronics and biomedicine” is the synthesis, functionalization and applications of zeolite-L particles for applications in electronics and biomedicine. This thesis is organized into 8 chapters, starting in chapter 1 with giving a general overview about nanotechnology and biomedicine. After that the concept of using nanocontainer in biomedicine are briefly discussed. In the following the nanocontainer zeolite-L is introduced and a summary of zeolite- L for applications in nanomedicine is given. Finally, the self-assembly of zeolites in monolayers and their further functionalization is discussed. Chapter 2 describes the zeolite-L synthesis, functionalization and their assembly into functional materials in detail. Three different types of zeolite-L have been used in this thesis: Nanozeolite-L particles with a size of just a few tenths of nanometers, disc-shaped zeolite-L with a diameter of around 200 nm and micrometer sized crystals with a length of about 1000 nm. Then different methods to functionalize the crystals with the desired groups and to obtain specific properties of the crystals are reported. In detail, the exchange with different counter cations, the insertion of guest molecules and the functionalization of the external crystal surface are reported. Finally the assembly into monolayers and their further functionalization by soft lithography is discussed. [...]

Junções túnel com eletrodos ferromagnéticos (Py/AlOx/Co) foram produzidas usando a técnica de desbastamento iônico e depositadas sobre condições de oxidação que garantem baixa altura da barreira de potencial, baixa assimetria da barreira, forte dependência da magnetorresistência túnel com a tensão aplicada e o tunelamento quântico como mecanismo de transporte eletrônico. As amostras foram produzidas com o objetivo de corroborar um modelo recentemente publicado e que prevê inversão da magnetorresistência túnel com a tensão aplicada devido à baixa altura do potencial da barreira. As medidas de magneto-transporte eletrônico (resistência de tunelamento em função do campo magnético aplicado) mostram uma inversão da magnetorresistência túnel com a tensão aplicada para temperatura constante de 77 K. O sistema (Py/AlOx/Co) é bem conhecido por apresentar magnetorresistência positiva onde a altura da barreira de potencial é geralmente igual ou maior a 2,0 eV (Moodera et al. 1995 e Boeve et al. 2000). Esta inversão não foi anteriormente reportada e se deve preferencialmente à baixa altura do potencial da barreira e à forte dependência com a tensão aplicada. A explicação física para a inversão é baseada no fator de coerência quântica, D(Ex , V), como previsto por Li et al. (2004a,b) e Ren et al. (2005) para a região de tensão intermediária. Ajustes às curvas I-V, medidas a temperatura ambiente, com os modelos de Simmons (1963b,c), Simmons (1964) e Chow (1965) mostram valores menores que os reportados anteriormente para a altura do potencial da barreira (≈ 1,0 eV) e barreiras com baixa assimetria (≈ 0,2 eV). Também, as curvas I-V para temperatura ambiente e baixa temperatura, as curvas I-T para tensão constante e o crescimento exponencial da resistência de tunelamento em função da espessura efetiva da barreira mostram que o tunelamento quântico é um mecanismo de transporte eletrônico. Este resultado sugere a possibilidade de constatar o aparecimento de áreas efetivas de tunelamento e indicando a presença de uma distribuição não uniforme da corrente de tunelamento. O efeito combinado da baixa altura da barreira de potencial, da baixa assimetria da barreira, da forte dependência da magnetorresistência túnel com a tensão aplicada e do tunelamento quântico como mecanismo de transporte eletrônico possibilitaram não somente a inversão da magnetorresistência túnel com a tensão aplicada, mas também o crescimento exponencial da resistência de tunelamento em função da espessura efetiva da barreira. / Tunneling junctions with ferromagnetic electrodes (Py/AlOx/Co) were produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier, strong tunneling magnetoresistance dependence with applied bias and quantum tunneling as the charge transport mechanism. The samples were deposited to verify a recently published model which predicts tunneling magnetoresistance inversion with applied bias due to low enough potential barrier height. Electronic transport measurements (tunneling resistance as a function of the applied magnetic field) show inverse (negative) tunneling magnetoresistance with applied bias at 77 K. Tunneling junctions of (Py/AlOx/Co) are well known positive magnetoresistance system where the potential barrier height is usually equal or higher than 2.0 eV (Moodera et al., 1995 e Boeve et al., 2000). This inverted tunneling magnetoresistance behavior has not been reported before and is due mainly to the low potential barrier height and the strong bias dependence The physical explanation for the inversion is based on the quantum coherence factor, D(Ex , V), following the Li et al. (2004ab) and Ren et al. (2005) model for intermediate voltage range. Room temperature I-V curves fitted with both Simmons’ (1963b,c), Simmons’ (1964) and Chow’s (1965) models showed potential barrier height values (≈ 1.0 eV), lower than those previously reported, and low asymmetry of the barrier (≈ 0.2 eV). Also, I-V curves for room and low temperature, I-T curves for constant applied bias and the exponential growth of the tunneling resistance as a function of the effective barrier thickness showed quantum tunneling as the charge transport mechanism. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution. The combined effect of low potential barrier height, low barrier asymmetry, strong tunneling magnetoresistance dependence with applied bias and quantum tunneling as the charge transport mechanism allowed not only the tunneling magnetoresistance inversion with applied bias but also, the exponential growth of the tunneling resistance as a function of the effective barrier thickness.

Este trabalho teve como finalidade determinar e otimizar as condições para a preparação e a caracterização de monocristais de alguns óxidos que apresentam considerável dependência de suas propriedades físico-químicas finais e magnitude da pressão da atmosfera de crescimento. Experimentos que envolvem diversas adaptações de um sistema de fusão a laser de pedestais foram projetados para investigar o melhor crescimento de monocristais de molibdatos alcalinos isolados e mistos (CaMoO4, cristal gradiente de CaMoO4-SrMoO4, Ca2</subFeMo06) e de um óxido titanato alcalino (Ba0,77Ca0,23TiO3). Também, os aspectos teóricos das condições experimentais foram estudados nos termos de um modelo termodinâmico existente. Adicionalmente, é mostrado que técnicas de caracterização estruturais (curvas de rocking com raios-X, topografia de raios X, método de Rietveld), térmicas (análise térmica diferencial) e ópticas (absorção ótica) foram aplicadas com sucesso além de outros métodos de caracterização bem estabelecidos (fotografia de retro-reflexão de raios-X, análise por raios-X de elétrons retro-espalhados, microscopia eletrônica de varredura). Os experimentos e os dados das caracterizações revelam que CaMoO4, SrMoO4 e Ba0,77Ca0,23 podem ser crescidos ao ar sem alterações de suas propriedades quando tratamento térmico cuidadoso é realizado nos reagentes de partida e aos produtos, enquanto que o Ca2FeMoO6 somente pode ser crescido em atmosfera isostática de N2 e em uma faixa pequena de pressões (0,25-0,75 bar). Em qualquer caso, a estabilidade do processo de crescimento é alcançada quando gradientes térmicos específicos e relações geométricas na zona fundida são estabelecidos após a imposição de uma atmosfera adequada de crescimento. As medidas estruturais, térmicas, ópticas e de composição convencionais confirmam a formação de fases e estequiometrias desejadas. Os dados estruturais refinados e de alta resolução demonstram o controle da composição e conseqüentemente do espaçamento interplanar de rede no cristal gradiente CaMoO4-SrMoO4, um primeiro exemplo de cristal gradiente de um óxido crescido por uma técnica de zona flutuante, e abrindo um panorama largo de possibilidades para a preparação de outros cristais gradientes de óxidos. / This thesis examines the conditions for the optimized single crystal preparation and characterization of some oxides compounds that present high dependency of the nature and pressure magnitude of the growth atmosphere on their final physico-chemical properties. Experiments involving several adaptations to a laser-heated pedestal growth system were designed to investigate the best crystal growth of a mixed alkaline titanate oxide (Ba0,77Ca0,23TiO3) and single and mixed alkaline molybdates oxides (CaMoO4, cristal gradiente de CaMoO4-SrMoO4, Ca2</subFeMo06). AIso, theoretical aspects of the experimental conditions were studied in terms of an existent thermodynamical model. In addition, it is shown that non-standard to techniques to characterize crystal\' s structural features (X-ray rocking, X-ray topography, Rietveld\'s method), thermo-physical (Differential Thermal Analysis) and optical properties (Optical Absorption) were succesfully applied besides others well established characterization methods. (X-ray Laue backreflection photography, Electron Dispersive X-Ray Analysis, Scanning Electron Microscopy). Experiments and characterizations data reveal that CaMoO4, SrMoO4 e Ba0,77Ca0,23succesfully grow in air at room conditions when careful thermal treatment of the starting materiaIs and products, while Ca2FeMo06 only can be grown in isostatic atmosphere of N2/H2 (95&#8240 vol./5&#8240 voI.) and at a short pressure range (0.25-0.75 bar). In any case, the stability of the growth process is reached when specific thermal gradients and geometric relations in the meU are established after the imposition of an adequate growth atmosphere. Conventional structure, thermal, optical and composition measurements confirm the formation of desired phases and stoichiometries with excellent results for both single and mixed compounds. Refined and high resolution structural data demonstrate large control of composition and therefore interplanar lattice spacing in the gradient crystal CaMoO4-SrMoO4, a first example of an oxide gradient crystal grown by a floating zone technique, and open a wide panorama of possibilities for the preparation of novel gradient oxides crystals.